1T365
Silicon Variable Capacitance Diode
Description
M-235
The 1T365 is a variable capacitance diode
contained in super miniature package, and used for
electronic-tuning of BS tuner.
Features
• Super miniature package
• Small capacitance
0.7 pF Typ. (VR=25 V)
10 nA Max. (VR=28 V)
• Low leakage current
• Small serial resistance 1.1 Ω Typ.
(VR=1 V, f=470 MHz)
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR
30
35
V
V
• Maximum reverse voltage VRM
Structure
(RL≥10 kΩ)
Silicon epitaxial planar type diode
• Operating temperature
• Storage temperature
Topr –20 to +75 °C
Tstg –65 to +150 °C
Electrical Characteristics
(Ta=25 °C)
Item
Symbol
Conditions
Min.
Typ.
Max.
10
Unit
nA
pF
Reverse current
IR
C2
VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
3.31
0.61
5.0
4.55
0.77
Diode capacitance
C25
C2/C25
rs
0.70
5.7
pF
Capacitance ratio
Serial resistance
VR=1 V, f=470 MHz
1.1
1.8
5.0
Ω
Capacitance deviation in a
matching group
∆C
VR=2 to 25 V, f=1 MHz
%
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E91539A82-TE