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1T365

型号:

1T365

描述:

硅变容二极管[ Silicon Variable Capacitance Diode ]

品牌:

SONY[ SONY CORPORATION ]

页数:

4 页

PDF大小:

49 K

1T365  
Silicon Variable Capacitance Diode  
Description  
M-235  
The 1T365 is a variable capacitance diode  
contained in super miniature package, and used for  
electronic-tuning of BS tuner.  
Features  
Super miniature package  
Small capacitance  
0.7 pF Typ. (VR=25 V)  
10 nA Max. (VR=28 V)  
Low leakage current  
Small serial resistance 1.1 Typ.  
(VR=1 V, f=470 MHz)  
Absolute Maximum Ratings (Ta=25 °C)  
Reverse voltage  
VR  
30  
35  
V
V
Maximum reverse voltage VRM  
Structure  
(RL10 k)  
Silicon epitaxial planar type diode  
Operating temperature  
Storage temperature  
Topr –20 to +75 °C  
Tstg –65 to +150 °C  
Electrical Characteristics  
(Ta=25 °C)  
Item  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
10  
Unit  
nA  
pF  
Reverse current  
IR  
C2  
VR=28 V  
VR=2 V, f=1 MHz  
VR=25 V, f=1 MHz  
3.31  
0.61  
5.0  
4.55  
0.77  
Diode capacitance  
C25  
C2/C25  
rs  
0.70  
5.7  
pF  
Capacitance ratio  
Serial resistance  
VR=1 V, f=470 MHz  
1.1  
1.8  
5.0  
Capacitance deviation in a  
matching group  
C  
VR=2 to 25 V, f=1 MHz  
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
—1—  
E91539A82-TE  
1T365  
Example of Representative Characteristics  
Diode capacitance vs. Reverse voltage  
10  
Reverse voltage vs. Operating ambient temperature  
45  
Ta=25°C  
f=1MHz  
IR=10µA  
40  
35  
30  
1
–20  
0
20  
40  
60  
80  
100  
Ta-Operating ambient temperature (°C)  
0.1  
1
10  
100  
VR-Reverse voltage (V)  
Reverse current vs. Operating ambient temperature  
100  
Reverse current vs. Reverse voltage  
10  
VR=28V  
Ta=60°C  
10  
1.0  
1.0  
Ta=25°C  
0.1  
0.1  
0.01  
0.01  
1
10  
100  
–20  
0
20  
40  
60  
80  
VR-Reverse voltage (V)  
Ta-Operating ambient temperature (°C)  
—2—  
1T365  
Serial resistance vs. Reverse voltage  
f=470MHz  
Serial resistance vs. Frequency  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.6  
1.5  
VR=1V  
Ta=25°C  
Ta=25°C  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
1
2
3
5
10  
20  
30  
VR-Reverse voltage (V)  
100  
200  
500  
1000  
f-Frequency (MHz)  
Diode capacitance vs. Operating ambient temperature  
f=1MHz  
Temperature coefficient of diode capacitance  
f=1MHz  
1.03  
1.02  
1.01  
1.00  
0.99  
0.98  
1000  
100  
10  
VR=2V  
VR=25V  
VR=10V  
–20  
0
20  
40  
60  
80  
1
10  
100  
Ta-Operating ambient temperature (°C)  
VR-Reverse voltage (V)  
—3—  
1T365  
Package Outline Unit : mm  
M-235  
+ 0.2  
– 0.1  
0.9 ± 0.1  
1.25  
+ 0.1  
– 0.05  
0.3  
0.2  
2
1
+ 0.1  
– 0.05  
0.3  
0 ± 0.05  
+ 0.1  
– 0.06  
0.11  
0° to 10°  
NOTE: Dimension “ ” does not include mold protrusion.  
SONY CODE  
M-235  
EIAJ CODE  
JEDEC CODE  
PACKAGE WEIGHT  
0.1g  
CATHODE MARK  
Marking  
2
Notes  
65  
B
1) B:Lot No.(Year and Month of manufacture)  
Year;Last one digit  
Month;A,B,C(for Oct. to Dec.)  
1 to 9(for Jan.to Sept.)  
1
—4—  
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