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CYM1831PY-20C

型号:

CYM1831PY-20C

描述:

64K ×32静态RAM模块[ 64K x 32 Static RAM Module ]

品牌:

CYPRESS[ CYPRESS ]

页数:

8 页

PDF大小:

237 K

31  
CYM1831  
64K x 32 Static RAM Module  
on an epoxy laminate board with pins. Four chip selects (CS1,  
CS2, CS3, and CS4) are used to independently enable the four  
bytes. Reading or writing can be executed on individual bytes  
or any combination of multiple bytes through proper use of  
selects.  
Features  
High-density 2-Mbit SRAM module  
32-bit standard footprint supports densities from 16K  
x 32 through 1M x 32  
High-speed CMOS SRAMs  
Access time of 15 ns  
Low active power  
5.3W (max.)  
Writing to each byte is accomplished when the appropriate  
Chip Selects (CSN) and Write Enable (WE) inputs are both  
LOW. Data on the input/output pins (I/OX) is written into the  
memory location specified on the address pins (A0 through  
A15).  
SMD technology  
TTL-compatible inputs and outputs  
Low profile  
Reading the device is accomplished by taking the Chip Selects  
(CSN) LOW and Output Enable (OE) LOW while Write Enable  
(WE) remains HIGH. Under these conditions the contents of  
the memory location specified on the address pins will appear  
on the data input/output pins (I/OX).  
Max. height of 0.50 in.  
Small PCB footprint  
1.2 sq. in.  
The data input/output pins stay in the high-impedance state  
when Write Enable (WE) is LOW or the appropriate chip se-  
lects are HIGH.  
Functional Description  
Two pins (PD0 and PD1) are used to identify module memory  
density in applications where alternate versions of the  
JEDEC-standard modules can be interchanged.  
The CYM1831 is a high-performance 2-Mbit static RAM mod-  
ule organized as 64K words by 32 bits. This module is con-  
structed from eight 64K x 4 SRAMs in SOJ packages mounted  
Logic Block Diagram  
Pin Configuration  
ZIP/SIMM  
Top View  
PD - OPEN  
0
GND  
1
I/O  
8
1
3
PD  
PD - GND  
2
4
6
0
1
PD  
I/O  
I/O  
I/O  
I/O  
V
A A  
0
1
2
3
0
15  
OE  
WE  
5
7
9
16  
I/O  
9
8
I/O  
I/O  
10  
11  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
11  
13  
15  
17  
19  
21  
23  
25  
27  
29  
31  
CC  
A
0
A
A
7
1
64K x 4  
SRAM  
64K x 4  
I/O I/O  
I/O I/O  
7
A
8
0
3
4
A
2
SRAM  
4
4
4
4
4
4
4
4
A
9
I/O  
I/O  
I/O  
I/O  
12  
13  
14  
15  
I/O  
I/O  
I/O  
I/O  
4
5
6
7
CS  
1
GND  
64K x 4  
SRAM  
64K x 4  
SRAM  
I/O I/O  
I/O I/O  
WE  
8
11  
12  
15  
23  
31  
A
15  
A
14  
CS  
2
CS  
1
CS  
CS  
CS  
2
3
4
CS  
4
33  
35  
37  
39  
41  
43  
45  
47  
49  
51  
53  
55  
57  
59  
61  
63  
CS  
3
34  
36  
38  
40  
42  
44  
46  
48  
50  
52  
54  
56  
58  
60  
62  
64  
NC  
OE  
I/O  
NC  
64K x 4  
SRAM  
64K x 4  
SRAM  
I/O I/O  
I/O I/O  
16  
19  
20  
GND  
24  
I/O  
I/O  
I/O  
I/O  
A
A
A
16  
17  
I/O  
I/O  
I/O  
25  
26  
27  
18  
19  
10  
11  
12  
A
3
64K x 4  
SRAM  
64K x 4  
SRAM  
I/O I/O  
I/O I/O  
A
28  
24  
27  
4
5
A
V
CC  
A
13  
20  
21  
22  
23  
A
6
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
28  
29  
30  
31  
GND  
Cypress Semiconductor Corporation  
Document #: 38-05270 Rev. **  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Revised March 15, 2002  
CYM1831  
Selection Guide  
1831-15  
15  
1831-20  
20  
1831-25  
25  
1831-30  
30  
1831-35  
35  
1831-45  
45  
Maximum Access Time (ns)  
Maximum Operating Current (mA)  
Maximum Standby Current (mA)  
1120  
160  
960  
720  
720  
720  
720  
160  
160  
160  
160  
160  
Maximum Ratings  
Operating Range  
Ambient  
Temperature  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Range  
VCC  
Commercial  
0°C to +70°C  
5V ± 10%  
Storage Temperature .................................65°C to +150°C  
Ambient Temperature with  
Power Applied.............................................55°C to +125°C  
Supply Voltage to Ground Potential............... 0.5V to +7.0V  
DC Voltage Applied to Outputs  
in High Z State............................................... 0.5V to +7.0V  
DC Input Voltage............................................ 0.5V to +7.0V  
Output Current into Outputs (LOW) .............................20 mA  
Electrical Characteristics Over the Operating Range  
1831-25, 30, 35,  
45  
1831-15  
1831-20  
Parameter  
VOH  
VOL  
Description  
Test Conditions  
Min. Max. Min. Max.  
Min.  
Max.  
Unit  
V
Output HIGH Voltage VCC = Min., IOH = 4.0 mA  
Output LOW Voltage VCC = Min., IOL = 8.0 mA  
Input HIGH Voltage  
2.4  
2.4  
2.4  
0.4  
0.4  
0.4  
VCC  
0.8  
V
VIH  
2.2  
VCC  
2.2  
VCC  
2.2  
0.5  
20  
20  
V
VIL  
Input LOW Voltage  
0.5 0.8 0.5 0.8  
20 +20 20 +20  
20 +20 20 +20  
V
IIX  
Input Load Current  
GND < VI < VCC  
+20  
+20  
µA  
µA  
IOZ  
Output Leakage  
Current  
GND < VO < VCC  
,
Output Disabled  
ICC  
VCC Operating  
Supply Current  
VCC = Max., IOUT = 0 mA,  
CSN < VIL  
1120  
320  
160  
960  
320  
160  
720  
320  
160  
mA  
mA  
mA  
ISB1  
ISB2  
Automatic CS Pow-  
er-Down Current[1]  
VCC = Max., CSN > VIH,  
Min. Duty Cycle = 100%  
Automatic CS Pow-  
er-Down Current[1]  
VCC = Max., CSN > VCC 0.2V,  
VIN > VCC 0.2V or VIN < 0.2V  
Capacitance[2]  
Parameter  
CINA  
Description  
Test Conditions  
Max.  
80  
Unit  
Input Capacitance (A0A15, WE, OE)  
Input Capacitance (CS)  
TA = 25°C, f = 1 MHz,  
VCC = 5.0V  
pF  
pF  
pF  
CINB  
15  
COUT  
Output Capacitance  
20  
Notes:  
1. A pull-up resistor to VCC on the CS input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.  
2. Tested on a sample basis.  
Document #: 38-05270 Rev. **  
Page 2 of 8  
CYM1831  
AC Test Loads and Waveforms  
R1 481  
R1 481Ω  
ALL INPUT PULSES  
90%  
10%  
5V  
5V  
OUTPUT  
3.0V  
GND  
90%  
10%  
OUTPUT  
R2  
255Ω  
R2  
255Ω  
30 pF  
5 pF  
< 5 ns  
< 5 ns  
INCLUDING  
JIG AND  
SCOPE  
INCLUDING  
JIG AND  
SCOPE  
(a)  
(b)  
Equivalent to:  
OUTPUT  
THÉVENIN EQUIVALENT  
167Ω  
1.73V  
Switching Characteristics Over the Operating Range[3]  
1831-15  
1831-20  
1831-25  
1831-30  
1831-35  
1831-45  
Parameter  
READ CYCLE  
tRC  
Description  
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit  
Read Cycle Time  
15  
3
20  
3
25  
3
30  
3
35  
3
45  
3
ns  
ns  
ns  
tAA  
Address to Data Valid  
15  
20  
25  
30  
35  
45  
tOHA  
Data Hold from  
Address Change  
tACS  
CS LOW to Data Valid  
OE LOW to Data Valid  
OE LOW to Low Z  
15  
8
20  
10  
25  
15  
30  
20  
35  
20  
45  
30  
ns  
ns  
ns  
ns  
ns  
tDOE  
tLZOE  
tHZOE  
tLZCS  
0
0
0
0
0
3
0
3
0
3
0
3
OE LOW to High Z  
CS LOW to Low Z[4]  
8
6
10  
8
15  
13  
15  
15  
20  
20  
20  
20  
tHZCS  
CS HIGH to High Z[4, 5]  
ns  
WRITE CYCLE[6]  
tWC  
tSCS  
tAW  
Write Cycle Time  
15  
10  
10  
20  
15  
15  
25  
20  
20  
30  
25  
25  
35  
30  
30  
45  
40  
40  
ns  
ns  
ns  
CS LOW to Write End  
Address Set-Up to  
Write End  
tHA  
tSA  
Address Hold from  
Write End  
2
2
2
2
2
2
2
2
2
2
2
2
ns  
ns  
Address Set-Up to  
Write Start  
tPWE  
tSD  
WE Pulse Width  
10  
8
15  
12  
20  
15  
25  
15  
25  
20  
30  
20  
ns  
ns  
Data Set-Up to Write  
End  
tHD  
Data Hold from Write  
End  
2
2
2
2
2
2
ns  
tLZWE  
WE HIGH to Low Z  
WE LOW to High Z[5]  
3
0
3
0
3
0
3
0
3
0
3
0
ns  
ns  
tHZWE  
7
10  
13  
15  
20  
20  
Note:  
3. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified  
IOL/IOH and 30-pF load capacitance.  
4. At any given temperature and voltage condition, tHZCS is less than tLZCS for any given device. These parameters are guaranteed by design and not 100% tested.  
5.  
tHZCS and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads and Waveforms. Transition is measured ±500 mV from steady-state voltage.  
6. The internal write time of the memory is defined by the overlap of CS LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate  
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.  
Document #: 38-05270 Rev. **  
Page 3 of 8  
CYM1831  
Switching Waveforms  
Read Cycle No. 1 [7, 8]  
t
RC  
ADDRESS  
t
AA  
t
OHA  
DATA OUT  
PREVIOUS DATA VALID  
DATA VALID  
Read Cycle No . 2[7, 9]  
t
CS  
RC  
t
ACS  
OE  
t
HZOE  
t
DOE  
t
HZCS  
t
LZOE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA VALID  
DATA OUT  
t
LZCS  
t
PD  
t
PU  
ICC  
V
CC  
50%  
50%  
SUPPLY  
ISB  
CURRENT  
Notes:  
7. WE is HIGH for read cycle.  
8. Device is continuously selected, CS = VIL and OE= VIL.  
9. Address valid prior to or coincident with CS transition LOW.  
Document #: 38-05270 Rev. **  
Page 4 of 8  
CYM1831  
Switching Waveforms (continued)  
Write Cycle No. 1 (WE Controlled)[6]  
t
WC  
ADDRESS  
CS  
t
SCS  
t
t
HA  
AW  
t
SA  
t
PWE  
WE  
t
t
HD  
SD  
DATA IN  
DATA VALID  
t
t
LZWE  
HZWE  
HIGH IMPEDANCE  
DATA OUT  
DATA UNDEFINED  
Write Cycle No. 2 (CS Controlled)[6, 10]  
t
WC  
ADDRESS  
t
SA  
t
SCS  
CS  
t
t
HA  
AW  
t
PWE  
WE  
t
t
HD  
SD  
DATA IN  
DATA VALID  
t
HZWE  
HIGH IMPEDANCE  
DATA OUT  
DATA UNDEFINED  
Note:  
10. If CS goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.  
Truth Table  
CSN WE OE Inputs/Outputs  
Mode  
Deselect/Power-Down  
Read  
H
L
L
L
X
H
L
X
L
High Z  
Data Out  
Data In  
High Z  
X
H
Write  
H
Deselect  
Document #: 38-05270 Rev. **  
Page 5 of 8  
CYM1831  
Ordering Information  
Package  
Name  
Package  
Type  
Operating  
Range  
Speed  
Ordering Code  
CYM1831PM15C  
CYM1831PN15C  
CYM1831PY15C  
CYM1831PZ15C  
CYM1831PM20C  
CYM1831PN20C  
CYM1831PY20C  
CYM1831PZ20C  
CYM1831PM25C  
CYM1831PN25C  
CYM1831PY25C  
CYM1831PZ25C  
CYM1831PM35C  
CYM1831PN35C  
CYM1831PY35C  
CYM1831PZ35C  
CYM1831PM45C  
CYM1831PN45C  
CYM1831PY45C  
CYM1831PZ45C  
15  
PM01  
PN01  
PM01  
PZ01  
PM01  
PN01  
PM01  
PZ01  
PM01  
PN01  
PM01  
PZ01  
PM01  
PN01  
PM01  
PZ01  
PM01  
PN01  
PM01  
PZ01  
64-Pin Plastic SIMM Module  
64-Pin Plastic Angled SIMM Module  
64-Pin Gold SIMM Module  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
64-Pin Plastic ZIP Module  
20  
25  
35  
45  
64-Pin Plastic SIMM Module  
64-Pin Plastic Angled SIMM Module  
64-Pin Gold SIMM Module  
64-Pin Plastic ZIP Module  
64-Pin Plastic SIMM Module  
64-Pin Plastic Angled SIMM Module  
64-Pin Gold SIMM Module  
64-Pin Plastic ZIP Module  
64-Pin Plastic SIMM Module  
64-Pin Plastic Angled SIMM Module  
64-Pin Gold SIMM Module  
64-Pin Plastic ZIP Module  
64-Pin Plastic SIMM Module  
64-Pin Plastic Angled SIMM Module  
64-Pin Gold SIMM Module  
64-Pin Plastic ZIP Module  
Document #: 38-05270 Rev. **  
Page 6 of 8  
CYM1831  
Package Diagrams  
64-Pin Plastic SIMM Module PM01  
0.125 DIA.  
+ 0.001 2 PLCS  
3.845  
3.855  
0.330  
MAX  
3.580  
3.588  
0.525  
0.400  
0.250  
MAX  
0.145 REF  
0.050  
TYP  
0.62 R + 0.001  
0.250  
PIN 1  
0.080  
PIN 64  
3.35 (64 PINS)  
0.250  
64-Pin Plastic Angled SIMM Module PN01  
3.845/3.855  
3.580/3.588  
.330MAX  
.590/.600  
U1  
U2  
U3  
U4  
.397/.403  
.245/.255  
.061/.063R  
.249/.251  
PIN1  
.075/.085  
.245/.255  
3.348/3.352  
in Plastic ZIP Module PZ01  
64-P  
Bottom View  
3.640  
3.660  
0.330  
MAX  
0.050  
0.050  
0.500  
MAX  
0.120  
0.150  
0.008  
0.014  
0.250  
TYP  
0.100  
TYP  
0.050  
TYP  
0.135  
0.165  
0.015  
0.025  
0.100  
TYP  
Pin 1  
DIMENSIONS IN INCHES  
MIN.  
MAX.  
Document #: 38-05270 Rev. **  
Page 7 of 8  
© Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize  
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.  
CYM1831  
Document Title: CYM1831 64K x 32 Static RAM Module  
Document Number: 38-05270  
Issue  
Date  
Orig. of  
Change  
REV.  
ECN NO.  
Description of Change  
**  
114171  
3/19/02  
DSG  
Change from Spec number: 38-M-00018 to 38-05270  
Document #: 38-05270 Rev. **  
Page 8 of 8  
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