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SZNUD3160LT1G

型号：

SZNUD3160LT1G

品牌：

ONSEMI[ ONSEMI ]

页数：

10 页

PDF大小：

157 K

下载PDF手册
NUD3160, SZNUD3160  
Industrial Inductive  
Load Driver  
This micro−integrated part provides a single component solution to  
switch inductive loads such as relays, solenoids, and small DC motors  
without the need of a free−wheeling diode. It accepts logic level  
inputs, thus allowing it to be driven by a large variety of devices  
including logic gates, inverters, and microcontrollers.  
www.onsemi.com  
MARKING DIAGRAMS  
Features  
3
SOT−23  
CASE 318  
STYLE 21  
JW8 MG  
• Provides Robust Interface between D.C. Relay Coils and Sensitive  
Logic  
1
G
2
• Capable of Driving Relay Coils Rated up to 150 mA at 12 V, 24 V  
or 48 V  
• Replaces 3 or 4 Discrete Components for Lower Cost  
• Internal Zener Eliminates Need for Free−Wheeling Diode  
• Meets Load Dump and other Automotive Specs  
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
JW8 = Specific Device Code  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
SC−74  
JW8 MG  
CASE 318F  
G
6
STYLE 7  
1
JW8 = Specific Device Code  
• These are Pb−Free Devices  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Typical Applications  
• Automotive and Industrial Environment  
• Drives Window, Latch, Door, and Antenna Relays  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Benefits  
• Reduced PCB Space  
• Standardized Driver for Wide Range of Relays  
• Simplifies Circuit Design and PCB Layout  
• Compliance with Automotive Specifications  
NUD3160LT1G  
SOT−23  
3000 / Tape &  
Reel  
(Pb−Free)  
SZNUD3160LT1G  
SOT−23  
(Pb−Free)  
3000 / Tape &  
Reel  
NUD3160DMT1G  
SC−74  
(Pb−Free)  
3000 / Tape &  
Reel  
SZNUD3160DMT1G  
SC−74  
(Pb−Free)  
3000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Drain (3)  
Drain (6)  
Drain (3)  
Gate (1)  
Gate (2)  
Gate (5)  
10 k  
10 k  
10 k  
100 k  
100 k  
100 k  
Source (2)  
Source (1)  
Source (4)  
CASE 318F  
CASE 318  
Figure 1. Internal Circuit Diagrams  
© Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2016 − Rev. 7  
NUD3160/D  
NUD3160, SZNUD3160  
MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
J
Symbol  
Rating  
Drain−to−Source Voltage – Continuous (T = 125°C)  
Value  
60  
Unit  
V
V
DSS  
GSS  
J
V
Gate−to−Source Voltage – Continuous (T = 125°C)  
12  
V
J
I
D
Drain Current – Continuous (T = 125°C)  
mA  
J
Minimum copper, double sided board, T = 80°C  
SOT−23  
SC74 Single device driven  
A
158  
157  
132 ea  
SC74 Both devices driven  
2
1 in copper, double sided board, T = 25°C  
A
SOT−23  
SC74 Single device driven  
SC74 Both devices driven  
272  
263  
230 ea  
E
Single Pulse Drain−to−Source Avalanche Energy  
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T Initial = 85°C)  
200  
20  
mJ  
W
V
Z
J
P
PK  
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)  
(T Initial = 85°C)  
J
E
LD1  
E
LD2  
E
LD3  
Load Dump Pulse, Drain−to−Source (Note 3)  
60  
R
= 0.5 W, T = 300 ms)  
SOURCE  
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T Initial = 85°C)  
J
Inductive Switching Transient 1, Drain−to−Source  
100  
300  
−14  
V
V
V
(Waveform: R  
= 10 W, T = 2.0 ms)  
SOURCE  
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T Initial = 85°C)  
J
Inductive Switching Transient 2, Drain−to−Source  
(Waveform: R  
= 4.0 W, T = 50 ms)  
SOURCE  
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T Initial = 85°C)  
J
Rev−Bat  
Reverse Battery, 10 Minutes (Drain−to−Source)  
(For Relay’s Coils/Inductive Loads of 80 W or more)  
Dual−Volt  
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)  
28  
V
V
ESD  
Human Body Model (HBM)  
2000  
According to EIA/JESD22/A114 Specification  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
www.onsemi.com  
2
NUD3160, SZNUD3160  
THERMAL CHARACTERISTICS  
Symbol  
Rating  
Value  
−40 to 125  
150  
Unit  
°C  
T
Operating Ambient Temperature  
Maximum Junction Temperature  
Storage Temperature Range  
A
T
°C  
J
T
−65 to 150  
°C  
STG  
P
Total Power Dissipation (Note 4)  
Derating above 25°C  
SOT−23  
SC−74  
225  
1.8  
mW  
mW/°C  
D
P
D
Total Power Dissipation (Note 4)  
Derating above 25°C  
380  
3.0  
mW  
mW/°C  
R
Thermal Resistance, Junction–to–Ambient  
Minimum Copper  
°C/W  
q
JA  
SOT−23  
SC−74 One Device Powered  
SC−74 Both Devices Equally Powered  
556  
556  
398  
2
300 mm Copper  
SOT−23  
SC−74 One Device Powered  
SC−74 Both Devices Equally Powered  
395  
420  
270  
1. Nonrepetitive current square pulse 1.0 ms duration.  
2. For different square pulse durations, see Figure 12.  
3. Nonrepetitive load dump pulse per Figure 3.  
4. Mounted onto minimum pad board.  
www.onsemi.com  
3
 
NUD3160, SZNUD3160  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain to Source Sustaining Voltage  
V
61  
66  
70  
V
BRDSS  
(I = 10 mA)  
D
Drain to Source Leakage Current  
I
mA  
DSS  
−
−
−
−
−
−
−
−
0.5  
1.0  
50  
(V = 12 V, V = 0 V)  
DS  
GS  
(V = 12 V, V = 0 V, T = 125°C)  
DS  
GS  
J
(V = 60 V, V = 0 V)  
DS  
GS  
80  
(V = 60 V, V = 0 V, T = 125°C)  
DS  
GS  
J
Gate Body Leakage Current  
(V = 3.0 V, V = 0 V)  
I
mA  
GSS  
−
−
−
−
−
−
−
−
60  
80  
GS  
DS  
(V = 3.0 V, V = 0 V, T = 125°C)  
GS  
DS  
J
90  
(V = 5.0 V, V = 0 V)  
GS  
DS  
110  
(V = 5.0 V, V = 0 V, T = 125°C)  
GS  
DS  
J
ON CHARACTERISTICS  
Gate Threshold Voltage  
V
GS(th)  
V
1.3  
1.3  
1.8  
−
2.0  
2.0  
(V = V , I = 1.0 mA)  
GS  
DS  
D
(V = V , I = 1.0 mA, T = 125°C)  
GS  
DS  
D
J
Drain to Source On−Resistance  
(I = 150 mA, V = 3.0 V)  
R
W
DS(on)  
−
−
−
−
−
−
−
−
2.4  
3.7  
1.8  
2.9  
D
GS  
(I = 150 mA, V = 3.0 V, T = 125°C)  
D
GS  
J
(I = 150 mA, V = 5.0 V)  
D
GS  
(I = 150 mA, V = 5.0 V, T = 125°C)  
D
GS  
J
Output Continuous Current  
(V = 0.3 V, V = 5.0 V)  
I
mA  
DS(on)  
150  
100  
200  
−
−
−
DS  
GS  
(V = 0.3 V, V = 5.0 V, T = 125°C)  
DS  
GS  
J
Forward Transconductance  
(V = 12 V, I = 150 mA)  
g
FS  
−
400  
−
mmho  
DS  
D
DYNAMIC CHARACTERISTICS  
Input Capacitance  
C
−
−
−
30  
14  
−
−
−
pf  
pf  
pf  
iss  
(V = 12 V, V = 0 V, f = 10 kHz)  
DS  
GS  
Output Capacitance  
(V = 12 V, V = 0 V, f = 10 kHz)  
C
oss  
DS  
GS  
Transfer Capacitance  
(V = 12 V, V = 0 V, f = 10 kHz)  
C
6.0  
rss  
DS  
GS  
SWITCHING CHARACTERISTICS  
Propagation Delay Times:  
High to Low Propagation Delay; Figure 2, (V = 12 V, V = 3.0 V)  
Low to High Propagation Delay; Figure 2, (V = 12 V, V = 3.0 V)  
ns  
ns  
t
−
−
918  
798  
−
−
PHL  
PLH  
DS  
GS  
t
DS  
GS  
t
t
−
−
331  
1160  
−
−
PHL  
PLH  
High to Low Propagation Delay; Figure 2, (V = 12 V, V = 5.0 V)  
Low to High Propagation Delay; Figure 2, (V = 12 V, V = 5.0 V)  
DS  
GS  
DS  
GS  
Transition Times:  
Fall Time; Figure 2, (V = 12 V, V = 3.0 V)  
t
−
−
2290  
618  
−
−
f
DS  
GS  
t
r
Rise Time; Figure 2, (V = 12 V, V = 3.0 V)  
DS  
GS  
t
r
−
−
622  
600  
−
−
f
Fall Time; Figure 2, (V = 12 V, V = 5.0 V)  
DS  
GS  
t
Rise Time; Figure 2, (V = 12 V, V = 5.0 V)  
DS  
GS  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
4
NUD3160, SZNUD3160  
TYPICAL WAVEFORMS  
(T = 25°C unless otherwise specified)  
J
V
IH  
V
V
in  
50%  
0 V  
t
t
PLH  
PHL  
V
OH  
OL  
90%  
50%  
10%  
out  
V
t
r
t
f
Figure 2. Switching Waveforms  
t
r
90%  
Load Dump Pulse Not Suppressed:  
V = 13.5 V Nominal 10%  
r
V
= 60 V Nominal 10%  
S
10% of Peak;  
Reference = V , I  
V
S
T = 300 ms Nominal 10%  
t = 1 − 10 ms 10%  
r
r
r
10%  
V , I  
T
r
r
Figure 3. Load Dump Waveform Definition  
www.onsemi.com  
5
NUD3160, SZNUD3160  
TYPICAL PERFORMANCE CURVES  
(T = 25°C unless otherwise specified)  
J
80  
70  
60  
80  
70  
V
DS  
= 60 V  
60  
50  
40  
50  
40  
30  
V
= 5 V  
= 3 V  
GS  
20  
10  
0
V
GS  
30  
20  
−50  
−25  
0
25  
50  
75  
100  
125  
−50  
−25  
0
25  
50  
75  
100  
125  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 4. Drain−to−Source Leakage vs.  
Figure 5. Gate−to−Source Leakage vs.  
Junction Temperature  
Junction Temperature  
66.4  
66.2  
66.0  
65.8  
65.6  
65.4  
65.2  
1E+03  
V
GS  
= 5 V  
V
= 2.5 V  
V
= 3 V  
GS  
GS  
1E+02  
1E+01  
1E+00  
1E−01  
1E−02  
1E−03  
V
= 2 V  
GS  
I
= 10 mA  
D
V
= 1.5 V  
GS  
65.0  
64.8  
−50  
−25  
0
25  
50  
75  
100  
125  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
T , JUNCTION TEMPERATURE (°C)  
J
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
Figure 6. Breakdown Voltage vs.  
Junction Temperature  
Figure 7. Output Characteristics  
3200  
2800  
1
0.1  
I
D
= 0.15 A  
V
DS  
= 0.8 V  
0.01  
2400  
2000  
1600  
0.001  
1E−04  
1E−05  
1E−06  
1E−07  
V
V
= 3.0 V  
= 5.0 V  
GS  
125 °C  
GS  
85 °C  
25 °C −40 °C  
1200  
800  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
−50  
−25  
0
25  
50  
75  
100  
125  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
T , JUNCTION TEMPERATURE (°C)  
J
Figure 8. Transfer Function  
Figure 9. On Resistance Variation vs  
Junction Temperature  
www.onsemi.com  
6
NUD3160, SZNUD3160  
TYPICAL PERFORMANCE CURVES  
(T = 25°C unless otherwise specified)  
J
100  
90  
80  
70  
60  
50  
40  
30  
20  
68.0  
I
D
= 250 mA  
67.5  
67.0  
66.5  
66.0  
65.5  
65.0  
64.5  
125 °C  
85 °C  
−40 °C  
25 °C  
85 °C  
25 °C  
64.0  
63.5  
63.0  
62.5  
62.0  
125 °C  
−40 °C  
10  
0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0  
0.1  
1.0  
10  
100  
1000  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
I , ZENER CURRENT (mA)  
Z
Figure 11. Zener Clamp Voltage vs. Zener  
Current  
Figure 10. On Resistance Variation vs.  
Gate−to−Source Voltage  
100  
10  
1
600  
500  
400  
SC74−1 (One Device Powered)  
SC74−2 (Both Devices Powered Equally)  
SC74−1  
SOT23  
300  
200  
SC74−2  
1 oz. Copper, Single−sided Board  
1.0  
100  
200  
300  
400  
600  
0.1  
10  
100  
0
500  
700  
2
P , PULSE WIDTH (ms)  
W
COPPER AREA (mm )  
Figure 12. Maximum Non−repetitive Surge  
Figure 13. Thermal Performance vs. Board  
Copper Area  
Power vs. Pulse Width  
www.onsemi.com  
7
NUD3160, SZNUD3160  
APPLICATIONS INFORMATION  
12 V Battery  
−
+
Relay, Vibrator,  
or  
Inductive Load  
Drain (3)  
Gate (1)  
10 k  
Micro  
Processor  
Signal  
for  
100 K  
Relay  
Source (2)  
NUD3160  
Figure 14. Applications Diagram  
www.onsemi.com  
8
NUD3160, SZNUD3160  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0_  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10 _  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10 _  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0 _  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
L1  
A
H
E
T
c
A1  
SEE VIEW C  
STYLE 21:  
PIN 1. GATE  
SIDE VIEW  
END VIEW  
2. SOURCE  
3. DRAIN  
RECOMMENDED  
SOLDERING FOOTPRINT*  
3X  
0.90  
2.90  
3X  
0.95  
PITCH  
0.80  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
9
NUD3160, SZNUD3160  
PACKAGE DIMENSIONS  
SC−74  
CASE 318F−05  
ISSUE N  
D
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
6
5
2
4
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.  
E
H
E
1
3
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.015  
0.007  
0.118  
0.059  
0.037  
0.016  
0.108  
−
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.90  
0.01  
0.25  
0.10  
2.90  
1.30  
0.85  
0.20  
2.50  
0°  
NOM  
1.00  
0.06  
0.37  
0.18  
3.00  
1.50  
0.95  
0.40  
2.75  
−
MAX  
MIN  
0.035  
0.001  
0.010  
0.004  
0.114  
0.051  
0.034  
0.008  
0.099  
0°  
MAX  
0.043  
0.004  
0.020  
0.010  
0.122  
0.067  
0.041  
0.024  
0.118  
10°  
1.10  
0.10  
0.50  
0.26  
3.10  
1.70  
1.05  
0.60  
3.00  
10°  
b
e
q
C
A
0.05 (0.002)  
H
E
q
L
A1  
STYLE 7:  
PIN 1. SOURCE 1  
2. GATE 1  
3. DRAIN 2  
4. SOURCE 2  
5. GATE 2  
6. DRAIN 1  
SOLDERING FOOTPRINT*  
2.4  
0.094  
0.95  
0.037  
1.9  
0.074  
0.95  
0.037  
0.7  
0.028  
1.0  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.039  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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◊
NUD3160/D  
厂商 型号 描述 页数 下载

ETC

 		SZN-002T-P0.7K [ Crimping tools ] 6 页

ETC

 		SZN-003T-P0.7K [ Crimping tools ] 6 页

SSDI

 		SZN4460 3.3 - 200伏齐纳二极管[ 3.3 – 200 VOLTS ZENER DIODES ] 2 页

SSDI

 		SZN4460C [ Zener Diode, 6.2V V(Z), 2%, 1.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS PACKAGE-2 ] 2 页

SSDI

 		SZN4460CSMS [ Zener Diode, 6.2V V(Z), 2%, 1.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, SMS, 2 PIN ] 2 页

SSDI

 		SZN4460CSMSNGC [ Zener Diode ] 2 页

SSDI

 		SZN4460CSMSS [ 暂无描述 ] 2 页

SSDI

 		SZN4460CSMSTX [ Zener Diode, 6.2V V(Z), 2%, 1.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, SMS, 2 PIN ] 2 页

SSDI

 		SZN4460CSMSTXV [ Zener Diode, 6.2V V(Z), 2%, 1.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, SMS, 2 PIN ] 2 页

SSDI

 		SZN4460CSMTXV [ Zener Diode ] 2 页

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