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EZ1400_15

型号:

EZ1400_15

品牌:

MARKTECH[ MARKTECH CORPORATE ]

页数:

5 页

PDF大小:

309 K

Cree® EZ1400™ Gen II LEDs  
Data Sheet  
CxxxEZ1400-Sxx000-2  
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN  
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-  
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.  
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux  
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.  
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad  
range of applications such as general illumination, automotive lighting, projection displays and camera flash.  
FEATURES  
APPLICATIONS  
EZBright LED Technology  
800 mW min. @ 1000 mA - 450 & 460 nm  
General Illumination  
»
»
»
»
»
Aircraft  
Lambertian Radiation  
Decorative Lighting  
Task Lighting  
Conductive Epoxy, Solder Paste or Preforms, or Flux  
Eutectic Attach  
Low Forward Voltage  
Outdoor Illumination  
● Dielectric Passivation across Epi Surface  
White LEDs  
Projection Displays  
Automotive  
Camera Flash  
CxxxEZ1400-Sxx000-2 Chip Diagram  
Die Cross Section  
Bottom View  
Top View  
Anode (+)  
AuSn  
1380 x 1380 μm  
Mesa (Junction)  
1350 x 1350 μm  
Thickness  
170 μm  
Cathodes (-)  
150 x 150 μm  
Subject to change without notice.  
www.cree.com  
1
Maximum Ratings at TA = 25°CNote 1  
DC Forward Current  
CxxxEZ1400-Sxx000-2  
1500 mA  
Peak Forward Current (1/10 duty cycle @ 1 kHz)  
LED Junction Temperature  
1500 mA  
145°C  
Reverse Voltage  
5 V  
Operating Temperature Range  
Storage Temperature Range  
-40°C to +100°C  
-40°C to +125°C  
Note 2  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 1000 mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.7  
Max.  
Max.  
Typ.  
20  
C450EZ1400-Sxx000-2  
C460EZ1400-Sxx000-2  
3.3  
3.3  
4.3  
4.3  
2
2
3.7  
21  
Mechanical Specifications  
Description  
CxxxEZ1400-Sxx000-2  
Dimensions  
Tolerance  
± 35  
P-N Junction Area (μm)  
Chip Area (μm)  
1350 x 1350  
1380 x 1380  
170  
± 35  
Chip Thickness (μm)  
± 25  
Top Au Bond Pad (μm) - Qty. 2  
Au Bond Pad Thickness (μm)  
Back Contact Metal Area (μm)  
Back Contact Metal Thickness (μm)  
150 x 150  
3.0  
± 25  
± 1.5  
± 35  
1380 x 1380  
3.0  
± 1.5  
Notes:  
1.ꢀ Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an  
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a  
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree  
EZBright Applications Note for assembly-process information.  
2.ꢀ All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled  
and operated at 1000 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given  
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All  
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an  
integrating sphere using Illuminance E.  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
2
CPR3EK Rev. -  
Standard Bins for CxxxEZ1400-Sxx000-2  
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from  
only one bin. Sorted die kit (CxxxEZ1400-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1400-0xxx-2)  
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 1000 mA. Radiant  
flux values are measured using Au-plated TO39 headers without an encapsulant.  
C450EZ1400-S80000-2  
C450EZ1400-0217-2  
C450EZ1400-0213-2  
C450EZ1400-0209-2  
C450EZ1400-0205-2  
C450EZ1400-0218-2  
C450EZ1400-0214-2  
C450EZ1400-0210-2  
C450EZ1400-0206-2  
C450EZ1400-0219-2  
C450EZ1400-0215-2  
C450EZ1400-0211-2  
C450EZ1400-0207-2  
C450EZ1400-0220-2  
C450EZ1400-0216-2  
C450EZ1400-0212-2  
C450EZ1400-0208-2  
1250 mW  
1100 mW  
950 mW  
800 mW  
445 nm  
447.5 nm  
450 nm  
452.5 nm  
455 nm  
Dominant Wavelength  
C460EZ1400-S80000-2  
C460EZ1400-0217-2  
C460EZ1400-0213-2  
C460EZ1400-0209-2  
C460EZ1400-0205-2  
C460EZ1400-0218-2  
C460EZ1400-0219-2  
C460EZ1400-0215-2  
C460EZ1400-0211-2  
C460EZ1400-0207-2  
C460EZ1400-0220-2  
C460EZ1400-0216-2  
C460EZ1400-0212-2  
C460EZ1400-0208-2  
1250 mW  
1100 mW  
950 mW  
800 mW  
C460EZ1400-0214-2  
C460EZ1400-0210-2  
C460EZ1400-0206-2  
455 nm  
457.5 nm  
460 nm  
Dominant Wavelength  
462.5 nm  
465 nm  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
3
CPR3EK Rev. -  
Characteristic Curves, TA = 25°C  
This is a representative measurement for the EZ1400 LED product. Actual curves will vary slightly for the various radiant  
flux and dominant wavelength bins.  
Relative Light Intensity vs. Junction Temperature  
Forward Current vs. Forward Voltage  
1.00  
1500  
1250  
1000  
750  
500  
250  
0
0.95  
0.90  
0.85  
0.80  
0.75  
0.70  
0.65  
0.60  
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
Junction Temperature (°C)  
Vf (V)  
Dominant Wavelength Shift vs. Junction Temperature  
Relative Intensity vs. Forward Current  
150%  
125%  
100%  
75%  
50%  
25%  
0%  
6
5
4
3
2
1
0
25  
50  
75  
100  
125  
150  
0
250  
500  
750  
1000  
1250  
1500  
Junction Temperature (°C)  
If (mA)  
Voltage Shift vs. Junction Temperature  
Wavelength Shift vs. Forward Current  
0.000  
-0.050  
-0.100  
-0.150  
-0.200  
-0.250  
-0.300  
-0.350  
3
2.5  
2
1.5  
1
0.5  
0
-0.5  
-1  
0
250  
500  
750  
1000  
1250  
1500  
25  
50  
75  
100  
125  
150  
If (mA)  
Junction Temperature (°C)  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
4
CPR3EK Rev. -  
Radiation Pattern  
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for  
each chip.  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc.  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
Fax: +1.919.313.5778  
www.cree.com  
5
CPR3EK Rev. -  
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