POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - sales@poseico.com
HIGH CURRENT PHASE CONTROL
THYRISTOR INSULATED MODULE
AZT1150
Repetitive voltage up to
Mean forward current
Surge current
800 V
1149 A
30 kA
FINAL SPECIFICATION
May 17 - Issue: 3
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
V DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
140
140
140
140
140
800
900
800
100
100
V
V
V
I
I
RRM
DRM
mA
mA
CONDUCTING
I
I
I
T (AV)
T (AV)
TSM
Mean forward current
180° sin, 50 Hz, Tc=55°C, double side cooled
180° sin, 50 Hz, Tc=85°C, double side cooled
1592
1149
30
A
A
Mean forward current
Surge forward current
I² t
Sine wave, 10 ms
without reverse voltage
140
kA
x 103
I² t
4500
1,22
A²s
V
V T
On-state voltage
Threshold voltage
On-state slope resistance
On-state current =
1800 A
25
V T(TO)
140
140
0,80
V
r
T
0,120
mohm
SWITCHING
From 75% VDRM up to 1050 A; gate 10V, 5W
Linear ramp up to 70% of VDRM
di/dt
Critical rate of rise of on-state current, min.
Critical rate of rise of off-state voltage, min.
Gate controlled delay time, typical
Circuit commutated turn-off time, typical
Reverse recovery charge
140
140
25
200
500
3
A/µs
V/µs
µs
dv/dt
VD=100V; gate source 25V, 10W , tr=.5 µs
t
t
d
q
dv/dt = 20 V/µs linear up to 75% VDRM
di/dt = -20 A/µs, I= 700 A
VR= 50 V
250
µs
Q rr
140
µC
A
I
I
I
rr
H
L
Peak reverse recovery current
Holding current, typical
VD=5V, gate open circuit
VD=5V, tp=30µs
25
25
300
700
mA
mA
Latching current, typical
GATE
V GT
Gate trigger voltage
VD=5V
25
25
3,50
300
0,25
30
V
mA
V
I
GT
Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=VDRM
140
V FGM
V
I
FGM
10
A
V RGM
P GM
P G
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
5
V
Pulse width 100 µs
150
2
W
W
MOUNTING
R th(j-h)
R th(c-h)
T j
Thermal impedance, DC
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
42,0
°C/kW
°C/kW
°C
20
-30 / 140
04,0 / 06,0
2800
F
kN
Mass
g
ORDERING INFORMATION : AZT1150 S 08
VRRM/100
standard specification
