UZ0107
Preliminary
TRIAC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDRM
TEST CONDITIONS
MIN TYP MAX UNIT
600
800
V
V
Repetitive Peak Off-State Voltage
Full Sine Wave, TSP≤103°C
Full Sine Wave, TJ(init)=25°C,
tp=20ms
12.5
13.8
A
A
Non-Repetitive Peak On-State Current
ITSM
Full Sine Wave, TJ(init)=25°C,
tp=16.7ms
RMS On-State Current
Peak Gate Current
Peak Gate Power
IT(RMS)
IGM
Full Sine Wave, TSP≤103°C
1
1
A
A
PGM
PG(AV)
TJ
2
W
W
°C
°C
Average Gate Power
Junction Temperature
Storage Temperature
I2t for Fusing
Over Any 20ms Period
0.1
125
150
0.78 A2s
TSTG
I2t
-40
tp=10ms, Sine-Wave Pulse
IT=1A, IG=20mA,
dIG/dt=100mA/µs, T2+ G+
IT=1A, IG=20mA,
dIG/dt=100mA/µs, T2+ G-
IT=1A, IG=20mA,
dIG/dt=100mA/µs, T2- G-
IT=1A, IG=20mA,
50 A/µs
50 A/µs
50 A/µs
20 A/µs
Rate of Rise Of On-State Current
dIT/dt
dIG/dt=100mA/µs, T2- G+
THERMAL DATA
PARAMETER
SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
15 K/W
Thermal Resistance from Junction to
Solder Point
θJ-SP
Full Cycle
Minimum Footprint, Printed-Circuit
Board Mounted, in Free Air
Pad Area, Printed-Circuit Board
Mounted, in Free Air
156
70
K/W
K/W
Thermal Resistance from Junction to
Ambient
θJA
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VD=12V, IT=0.1A, T2+ G+
MIN TYP MAX UNIT
0.3
0.3
0.3
0.3
5
5
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
VD=12V, IT=0.1A, T2+ G-
IGT
Gate Trigger Current (TJ=25°C)
Latching Current (TJ=25°C)
VD=12V, IT=0.1A, T2- G-
5
VD=12V, IT=0.1A, T2- G+
VD=12V, IG=0.1A, T2+ G+
7
10
25
10
10
10
1.6
1.3
VD=12V, IG=0.1A, T2+ G-
IL
VD=12V, IG=0.1A, T2- G-
VD=12V, IG=0.1A, T2- G+
Holding Current
On-State Voltage
IH
VD=12V, TJ=25°C
VT
IT=1A, TJ=25°C
1.3
VD=12V, IT=0.1A, TJ=25°C
VD=600V, IT=0.1A, TJ=125°C
VD=600V, TJ=125°C
V
Gate Trigger Voltage
VGT
ID
0.2
100
0.5
V
Off-State Current
0.5
mA
V
DM=402V, TJ=110°C, Gate Open
Rate of Rise of Off-State Voltage
dVD/dt
V/µs
Circuit
VDM=400V, TJ=110°C,
dVcom/dt dIcom/dt=0.44A/ms,
Gate Open Circuit
Rate of Change of Commutating
Voltage
V/µs
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R401-038.b
www.unisonic.com.tw
