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SZNUD3124DMT1G

型号：

SZNUD3124DMT1G

品牌：

ONSEMI[ ONSEMI ]

页数：

10 页

PDF大小：

150 K

下载PDF手册
NUD3124, SZNUD3124  
Automotive Inductive Load  
Driver  
This micro−integrated part provides a single component solution to  
switch inductive loads such as relays, solenoids, and small DC motors  
without the need of a free−wheeling diode. It accepts logic level  
inputs, thus allowing it to be driven by a large variety of devices  
including logic gates, inverters, and microcontrollers.  
http://onsemi.com  
MARKING DIAGRAMS  
Features  
3
SOT−23  
CASE 318  
STYLE 21  
JW6 MG  
• Provides Robust Interface between D.C. Relay Coils and Sensitive  
Logic  
1
G
2
• Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts  
JW6 = Specific Device Code  
• Replaces 3 or 4 Discrete Components for Lower Cost  
• Internal Zener Eliminates Need for Free−Wheeling Diode  
• Meets Load Dump and other Automotive Specs  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
• These are Pb−Free Devices  
SC−74  
JW6 MG  
CASE 318F  
G
6
STYLE 7  
1
JW6 = Specific Device Code  
Typical Applications  
M
= Date Code  
• Automotive and Industrial Environment  
• Drives Window, Latch, Door, and Antenna Relays  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Benefits  
†
• Reduced PCB Space  
Device  
Package  
Shipping  
• Standardized Driver for Wide Range of Relays  
• Simplifies Circuit Design and PCB Layout  
• Compliance with Automotive Specifications  
NUD3124LT1G  
SOT−23  
3000 / Tape &  
Reel  
(Pb−Free)  
SZNUD3124LT1G  
SOT−23  
(Pb−Free)  
3000 / Tape &  
Reel  
NUD3124DMT1G  
SC−74  
(Pb−Free)  
3000 / Tape &  
Reel  
SZNUD3124DMT1G  
SC−74  
(Pb−Free)  
3000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
INTERNAL CIRCUIT DIAGRAMS  
Drain (3)  
Drain (6)  
Drain (3)  
Gate (1)  
Gate (2)  
Gate (5)  
10 k  
10 k  
10 k  
100 K  
100 K  
100 K  
Source (2)  
Source (1)  
Source (4)  
CASE 318  
CASE 318F  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
February, 2012 − Rev. 12  
NUD3124/D  
NUD3124, SZNUD3124  
MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
J
Symbol  
Rating  
Value  
Unit  
V
DSS  
Drain−to−Source Voltage – Continuous  
28  
V
(T = 125°C)  
J
V
GSS  
Gate−to−Source Voltage – Continuous  
12  
V
(T = 125°C)  
J
I
Drain Current – Continuous  
(T = 125°C)  
J
150  
250  
mA  
mJ  
D
E
Single Pulse Drain−to−Source Avalanche Energy  
(For Relay’s Coils/Inductive Loads of 80 W or Higher)  
Z
(T Initial = 85°C)  
J
P
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)  
(T Initial = 85°C)  
J
20  
80  
W
V
PK  
E
LD1  
E
LD2  
E
LD3  
Load Dump Suppressed Pulse, Drain−to−Source (Notes 3 and 4)  
(Suppressed Waveform: V = 45 V, R  
= 0.5 W, T = 200 ms)  
s
SOURCE  
(For Relay’s Coils/Inductive Loads of 80 W or Higher)  
(T Initial = 85°C)  
J
Inductive Switching Transient 1, Drain−to−Source  
100  
300  
−14  
V
V
V
(Waveform: R  
= 10 W, T = 2.0 ms)  
SOURCE  
(For Relay’s Coils/Inductive Loads of 80 W or Higher)  
(T Initial = 85°C)  
J
Inductive Switching Transient 2, Drain−to−Source  
(Waveform: R  
= 4.0 W, T = 50 ms)  
SOURCE  
(For Relay’s Coils/Inductive Loads of 80 W or Higher)  
(T Initial = 85°C)  
J
Rev−Bat  
Reverse Battery, 10 Minutes (Drain−to−Source)  
(For Relay’s Coils/Inductive Loads of 80 W or more)  
Dual−Volt  
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)  
28  
V
V
ESD  
Human Body Model (HBM)  
2,000  
According to EIA/JESD22/A114 Specification  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Nonrepetitive current square pulse 1.0 ms duration.  
2. For different square pulse durations, see Figure 2.  
3. Nonrepetitive load dump suppressed pulse per Figure 3.  
4. For relay’s coils/inductive loads higher than 80 W, see Figure 4.  
http://onsemi.com  
2
 
NUD3124, SZNUD3124  
THERMAL CHARACTERISTICS  
Symbol  
Rating  
Value  
−40 to 125  
150  
Unit  
°C  
T
Operating Ambient Temperature  
Maximum Junction Temperature  
Storage Temperature Range  
A
T
°C  
J
T
−65 to 150  
°C  
STG  
P
Total Power Dissipation (Note 5)  
Derating above 25°C  
SOT−23  
SC−74  
225  
1.8  
mW  
mW/°C  
D
P
D
Total Power Dissipation (Note 5)  
Derating above 25°C  
380  
3.0  
mW  
mW/°C  
R
Thermal Resistance Junction–to–Ambient (Note 5)  
SOT−23  
SC−74  
556  
329  
°C/W  
q
JA  
5. Mounted onto minimum pad board.  
http://onsemi.com  
3
 
NUD3124, SZNUD3124  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain to Source Sustaining Voltage  
V
28  
34  
38  
V
BRDSS  
(I = 10 mA)  
D
Drain to Source Leakage Current  
I
mA  
DSS  
−
−
−
−
−
−
−
−
0.5  
1.0  
50  
(V = 12 V, V = 0 V)  
DS  
GS  
(V = 12 V, V = 0 V, T = 125°C)  
DS  
GS  
J
(V = 28 V, V = 0 V)  
DS  
GS  
80  
(V = 28 V, V = 0 V, T = 125°C)  
DS  
GS  
J
Gate Body Leakage Current  
(V = 3.0 V, V = 0 V)  
I
mA  
GSS  
−
−
−
−
−
−
−
−
60  
80  
GS  
DS  
(V = 3.0 V, V = 0 V, T = 125°C)  
GS  
DS  
J
90  
(V = 5.0 V, V = 0 V)  
GS  
DS  
110  
(V = 5.0 V, V = 0 V, T = 125°C)  
GS  
DS  
J
ON CHARACTERISTICS  
Gate Threshold Voltage  
V
GS(th)  
V
1.3  
1.3  
1.8  
−
2.0  
2.0  
(V = V , I = 1.0 mA)  
GS  
DS  
D
(V = V , I = 1.0 mA, T = 125°C)  
GS  
DS  
D
J
Drain to Source On−Resistance  
(I = 150 mA, V = 3.0 V)  
R
W
DS(on)  
−
−
−
−
−
−
−
−
1.4  
1.7  
0.8  
1.1  
D
GS  
(I = 150 mA, V = 3.0 V, T = 125°C)  
D
GS  
J
(I = 150 mA, V = 5.0 V)  
D
GS  
(I = 150 mA, V = 5.0 V, T = 125°C)  
D
GS  
J
Output Continuous Current  
(V = 0.25 V, V = 3.0 V)  
I
mA  
DS(on)  
150  
140  
200  
−
−
−
DS  
GS  
(V = 0.25 V, V = 3.0 V, T = 125°C)  
DS  
GS  
J
Forward Transconductance  
(V = 12 V, I = 150 mA)  
g
FS  
−
500  
−
mmho  
DS  
D
DYNAMIC CHARACTERISTICS  
Input Capacitance  
Ciss  
Coss  
Crss  
−
−
−
32  
21  
−
−
−
pf  
pf  
pf  
(V = 12 V, V = 0 V, f = 10 kHz)  
DS  
GS  
Output Capacitance  
(V = 12 V, V = 0 V, f = 10 kHz)  
DS  
GS  
Transfer Capacitance  
(V = 12 V, V = 0 V, f = 10 kHz)  
8.0  
DS  
GS  
SWITCHING CHARACTERISTICS  
Propagation Delay Times:  
High to Low Propagation Delay; Figure 1, (V = 12 V, V = 3.0 V)  
Low to High Propagation Delay; Figure 1, (V = 12 V, V = 3.0 V)  
ns  
ns  
t
−
−
890  
912  
−
−
PHL  
DS  
GS  
t
PLH  
DS  
GS  
t
t
−
−
324  
1280  
−
−
PHL  
PLH  
High to Low Propagation Delay; Figure 1, (V = 12 V, V = 5.0 V)  
Low to High Propagation Delay; Figure 1, (V = 12 V, V = 5.0 V)  
DS  
GS  
DS  
GS  
Transition Times:  
Fall Time; Figure 1, (V = 12 V, V = 3.0 V)  
t
−
−
2086  
708  
−
−
f
DS  
GS  
t
r
Rise Time; Figure 1, (V = 12 V, V = 3.0 V)  
DS  
GS  
t
r
−
−
556  
725  
−
−
f
Fall Time; Figure 1, (V = 12 V, V = 5.0 V)  
DS  
GS  
t
Rise Time; Figure 1, (V = 12 V, V = 5.0 V)  
DS  
GS  
http://onsemi.com  
4
NUD3124, SZNUD3124  
TYPICAL PERFORMANCE CURVES  
(T = 25°C unless otherwise noted)  
J
V
IH  
V
V
in  
50%  
0 V  
t
t
PLH  
PHL  
V
OH  
OL  
90%  
50%  
10%  
out  
V
t
r
t
f
Figure 1. Switching Waveforms  
25  
20  
15  
10  
5
0
1
10  
100  
P , PULSE WIDTH (ms)  
W
Figure 2. Maximum Non−repetitive Surge  
Power versus Pulse Width  
T
R
Load Dump Pulse Not Suppressed:  
V
V
= 13.5 V Nominal 10%  
= 60 V Nominal 10%  
R
90%  
S
T = 300 ms Nominal 10%  
= 1 − 10 ms 10%  
Load Dump Pulse Suppressed:  
NOTE: Max. Voltage DUT is exposed to is  
NOTE: approximately 45 V.  
T
R
10% of Peak;  
Reference = V , I  
VS  
R
R
10%  
V , I  
V
S
= 30 V 20%  
T
R
R
T = 150 ms 20%  
Figure 3. Load Dump Waveform Definition  
http://onsemi.com  
5
NUD3124, SZNUD3124  
140  
120  
14  
12  
10  
8
V
DS  
= 28 V  
100  
80  
6
4
60  
40  
2
0
80 110 140 170 200 230 260 290 320 350  
−50  
−25  
0
25  
50  
75  
100  
125  
T , JUNCTION TEMPERATURE (°C)  
J
RELAY’S COIL (W)  
Figure 4. Load Dump Capability versus  
Relay’s Coil dc Resistance  
Figure 5. Drain−to−Source Leakage versus  
Junction Temperature  
34.8  
80  
70  
34.6  
34.4  
34.2  
34.0  
33.8  
60  
50  
40  
V
= 5 V  
= 3 V  
GS  
I
D
= 10 mA  
V
GS  
30  
20  
33.6  
33.4  
−50  
−25  
0
25  
50  
75  
100  
125  
−50  
−25  
0
25  
50  
75  
100  
125  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 6. Gate−to−Source Leakage versus  
Figure 7. Breakdown Voltage versus Junction  
Temperature  
Junction Temperature  
1
1
0.1  
V
GS  
= 5 V  
V
DS  
= 0.8 V  
0.01  
V
V
= 2 V  
GS  
V
= 3 V  
V
= 2.5 V  
125 °C  
GS  
GS  
0.01  
1E−04  
1E−06  
1E−08  
1E−10  
0.001  
1E−04  
1E−05  
1E−06  
1E−07  
85 °C  
25 °C  
−40 °C  
= 1 V  
GS  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.5 1.0  
1.5 2.0 2.5 3.0 3.5  
4.0 4.5 5.0  
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
Figure 8. Output Characteristics  
Figure 9. Transfer Function  
http://onsemi.com  
6
NUD3124, SZNUD3124  
0.20  
1800  
1600  
I
D
= 250 mA  
I
V
= 0.25 A  
D
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
= 3.0 V  
GS  
1400  
1200  
1000  
800  
125 °C  
85 °C 25 °C  
−40 °C  
I
V
= 0.15 A  
= 3.0 V  
D
GS  
I
D
= 0.15 A  
600  
400  
V
= 5.0 V  
GS  
0.02  
0.00  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
−50  
−25  
0
25  
50  
75  
100  
125  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
T , JUNCTION TEMPERATURE (°C)  
J
Figure 11. On Resistance Variation versus  
Figure 10. On Resistance Variation versus  
Junction Temperature  
Gate−to−Source Voltage  
36.0  
35.5  
35.0  
−40 °C  
25 °C  
85 °C  
34.5  
34.0  
33.5  
33.0  
125 °C  
32.5  
32.0  
0.1  
1.0  
10  
100  
1000  
I , ZENER CURRENT (mA)  
Z
Figure 12. Zener Clamp Voltage versus Zener  
Current  
1.0  
0.1  
D = 0.5  
0.2  
0.1  
0.05  
P
d(pk)  
0.02  
0.01  
0.01  
0.001  
t
PW  
1
t
2
PERIOD  
DUTY CYCLE = t /t  
SINGLE PULSE  
0.1  
1
2
0.01  
1.0  
10  
100  
1000  
10,000  
100,000  
1,000,000  
t1, PULSE WIDTH (ms)  
Figure 13. Transient Thermal Response for NUD3124LT1G  
http://onsemi.com  
7
NUD3124, SZNUD3124  
APPLICATIONS INFORMATION  
12 V Battery  
−
+
Relay, Vibrator,  
or  
Inductive Load  
Drain (3)  
Gate (1)  
10 k  
Micro  
Processor  
Signal  
for  
100 K  
Relay  
Source (2)  
NUD3124  
Figure 14. Applications Diagram  
http://onsemi.com  
8
NUD3124, SZNUD3124  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0°  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10°  
c
1
2
b
0.25  
e
q
H
A
E
q
L
STYLE 21:  
A1  
PIN 1. GATE  
2. SOURCE  
3. DRAIN  
L1  
VIEW C  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
9
NUD3124, SZNUD3124  
PACKAGE DIMENSIONS  
SC−74  
CASE 318F−05  
ISSUE M  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
D
ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES  
LEAD FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS  
OF BASE MATERIAL.  
4. 318F−01, −02, −03, −04 OBSOLETE. NEW  
STANDARD 318F−05.  
6
5
2
4
E
H
E
1
3
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.015  
0.007  
0.118  
0.059  
0.037  
0.016  
0.108  
−
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.90  
0.01  
0.25  
0.10  
2.90  
1.30  
0.85  
0.20  
2.50  
0°  
NOM  
1.00  
0.06  
0.37  
0.18  
3.00  
1.50  
0.95  
0.40  
2.75  
−
MAX  
1.10  
0.10  
0.50  
0.26  
3.10  
1.70  
1.05  
0.60  
3.00  
10°  
MIN  
0.035  
0.001  
0.010  
0.004  
0.114  
0.051  
0.034  
0.008  
0.099  
0°  
MAX  
0.043  
0.004  
0.020  
0.010  
0.122  
0.067  
0.041  
0.024  
0.118  
10°  
b
e
q
C
A
0.05 (0.002)  
H
E
L
q
A1  
STYLE 7:  
PIN 1. SOURCE 1  
2. GATE 1  
3. DRAIN 2  
SOLDERING FOOTPRINT*  
4. SOURCE 2  
5. GATE 2  
6. DRAIN 1  
2.4  
0.094  
0.95  
0.037  
1.9  
0.074  
0.95  
0.037  
0.7  
0.028  
1.0  
0.039  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
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NUD3124/D  
厂商 型号 描述 页数 下载

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