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SZNUP2242WTT3G

型号:

SZNUP2242WTT3G

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

61 K

SZNUP2242  
Dual Line CAN  
Bus Protector  
The SZNUP2242 has been designed to protect the CAN transceiver  
from ESD and other harmful transient voltage events. This device  
provides bidirectional protection for each data line with a single  
compact SC−70 (SOT−323) package, giving the system designer a low  
cost option for improving system reliability and meeting stringent  
EMI requirements.  
www.onsemi.com  
MARKING  
DIAGRAM  
Features  
SC−70  
CASE 419  
STYLE 4  
25MG  
200 W Peak Power Dissipation per Line (8 x 20 msec Waveform)  
Diode Capacitance Matching  
Low Reverse Leakage Current (< 100 nA)  
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4  
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns  
− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)  
ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A  
(1 x 50 ms)  
G
1
25  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
(Note: Microdot may be in either location)  
PIN 1  
ISO 7637−3, Repetitive Electrical Fast Transient (EFT)  
EMI Surge Pulses, 50 A (5 x 50 ns)  
PIN 3  
PIN 2  
Flammability Rating UL 94 V−0  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
CAN_H  
CAN_L  
CAN  
Transceiver  
CAN Bus  
These are Pb−Free Devices  
Applications  
SZNUP2242  
Automotive Networks  
CAN / CAN−FD  
Low and High−Speed CAN  
Fault Tolerant CAN  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
September, 2015 − Rev. 0  
SZNUP2242/D  
SZNUP2242  
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
J
Symbol  
Rating  
Value  
200  
Unit  
W
PPK  
Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
−55 to 150  
−55 to 150  
260  
°C  
T
J
°C  
T
L
Lead Solder Temperature (10 s)  
°C  
ESD  
Human Body Model (HBM)  
Machine Model (MM)  
IEC 61000−4−2 Specification (Contact)  
8.0  
1.6  
30  
kV  
kV  
kV  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Non−repetitive current pulse per Figure 1.  
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)  
J
Symbol  
Parameter  
Reverse Working Voltage  
Breakdown Voltage  
Test Conditions  
Min  
24  
26.2  
Typ  
Max  
Unit  
V
V
RWM  
(Note 2)  
I = 1 mA (Note 3)  
V
BR  
32  
V
T
I
R
Reverse Leakage Current  
Clamping Voltage  
V
RWM  
= 24 V  
15  
33.4  
100  
36.6  
nA  
V
V
C
I
PP  
= 1 A (8 x 20 ms Waveform)  
(Note 4)  
V
C
Clamping Voltage  
I
PP  
= 3 A (8 x 20 ms Waveform)  
44  
50  
V
(Note 4)  
I
Maximum Peak Pulse Current  
Capacitance  
8 x 20 ms Waveform (Note 4)  
3.0  
10  
2
A
pF  
%
PP  
C
V
R
V
R
= 0 V, f = 1 MHz (Line to GND)  
= 0 V, 5 MHz (Note 5)  
J
DC  
Diode Capacitance Matching  
0.26  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. TVS devices are normally selected according to the working peak reverse voltage (V  
), which should be equal or greater than the DC  
RWM  
or continuous peak operating voltage level.  
3. V is measured at pulse test current I .  
BR  
T
4. Pulse waveform per Figure 1.  
5. DC is the percentage difference between C of lines 1 and 2 measured according to the test conditions given in the electrical characteristics  
J
table.  
ORDERING INFORMATION  
Device  
SZNUP2242WTT1G  
Package  
Shipping  
SC−70  
3000 / Tape & Reel  
(Pb−Free)  
SZNUP2242WTT3G  
SC−70  
(Pb−Free)  
10000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
2
 
SZNUP2242  
TYPICAL PERFORMANCE CURVES  
(T = 25°C unless otherwise noted)  
J
3.5  
110  
100  
90  
WAVEFORM  
PARAMETERS  
3.0  
2.5  
2.0  
1.5  
1.0  
t = 8 ms  
r
80  
t = 20 ms  
d
c−t  
70  
60  
50  
t = I /2  
d
PP  
40  
30  
20  
10  
0
0.5  
0.0  
0
5
10  
15  
t, TIME (ms)  
20  
25  
30  
30  
35  
40  
45  
50  
V , CLAMPING VOLTAGE (V)  
C
Figure 1. Pulse Waveform, 8 × 20 ms  
Figure 2. Clamping Voltage vs Peak Pulse Current  
50  
9
8
7
45  
40  
35  
30  
25  
20  
15  
10  
5
125°C  
25°C  
6
5
4
3
2
25°C  
65°C  
125°C  
T = −55°C  
A
0
20  
22  
24  
26  
28  
30  
32  
34  
0
5
10  
15  
20  
25  
V , REVERSE VOLTAGE (V)  
R
V
BR  
, VOLTAGE (V)  
Figure 4. VBR versus IT Characteristics  
Figure 3. Typical Junction Capacitance vs  
Reverse Voltage  
120  
100  
80  
60  
40  
20  
0
25  
20  
15  
10  
5
−55°C  
+25°C  
T = +150°C  
A
0
−60  
−30  
0
30  
60  
90  
120  
150 180  
0
1
2
3
4
5
I , LEAKAGE CURRENT (nA)  
L
TEMPERATURE (°C)  
Figure 5. IR versus Temperature Characteristics  
Figure 6. Temperature Power Dissipation Derating  
www.onsemi.com  
3
SZNUP2242  
PACKAGE DIMENSIONS  
SC−70 (SOT−323)  
CASE 419−04  
ISSUE N  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
e1  
MILLIMETERS  
INCHES  
DIM  
A
A1  
A2  
b
c
D
E
e
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
0.70 REF  
0.35  
0.18  
2.10  
1.24  
1.30  
0.65 BSC  
MAX  
1.00  
0.10  
MIN  
0.032  
0.000  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
0.026 BSC  
MAX  
0.040  
0.004  
3
E
H
E
1
2
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0.012  
0.004  
0.071  
0.045  
0.047  
0.016  
0.010  
0.087  
0.053  
0.055  
b
e
e1  
L
H
E
0.38  
2.10  
0.015  
0.083  
0.20  
2.00  
0.56  
2.40  
0.008  
0.079  
0.022  
0.095  
STYLE 4:  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
c
A
A2  
0.05 (0.002)  
L
A1  
SOLDERING FOOTPRINT*  
0.65  
0.025  
0.65  
0.025  
1.9  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
Honeywell and SDS are registered trademarks of Honeywell International Inc.  
DeviceNet is a trademark of Rockwell Automation.  
ON Semiconductor and the  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed  
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable  
copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
SZNUP2242/D  
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