UZ0103
Preliminary
TRIACS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
600
800
600
800
1
UNIT
V
UZ0103M
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
VDRM
UZ0103N
V
UZ0103M
V
VRRM
IT(RMS)
ITSM
UZ0103N
V
RMS On-State Current (full sine wave)
Non Repetitive Surge Peak On-State
Current (full cycle, TJ initial=25°C)
I2t Value for Fusing
TL=50°C
A
F=50Hz, t=20ms
F=60Hz, t=16.7ms
tp=10ms
8
A
8.5
A
A2s
I2t
0.35
Critical Rate of Rise of On-State Current:
IG=2*IGT, tr≤100ns
F=120Hz, TJ=125°C
dI/dt
20
A/µs
Peak Gate Current
tp=20µs, TJ=125°C
TJ=125°C
IGM
PG(AV)
TJ
1
A
Average Gate Power Dissipation
Operating Junction Temperature
Storage Junction Temperature
1
W
°C
°C
-40~+125
-40~+150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
°C/W
°C/W
°C/W
°C/W
TO-92
150
60
Junction to Ambient
θJA
SOT-223
TO-92
60
Junction to Case
θJC
SOT-223
25
Note: S=Copper surface under tab.
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS QUADRANT MIN TYP MAX UNIT
TJ=25°C
TJ=125°C
I-II-III
5
0.5
3
µA
mA
mA
mA
V
Repetitive Peak Off-State or
Reverse Current
I
DRM, IRRM VDRM=VRRM
Gate Trigger Current (Note 1)
Gate Trigger Voltage
IGT
VD=12V, RL=30Ω
IV
5
VGT
VGD
IH
ALL
1.3
VD=VDRM, RL=3.3kΩ,
TJ=125°C
Gate Non-Trigger Voltage
Holding Current (Note 2)
Latching Current
ALL
0.2
V
IT=50mA
7
7
mA
mA
I-III-IV
II
IL
IG=1.2IGT
15
mA
Rise of Off-State Voltage (Note 2)
Rise of Off-State Voltage at
Commutation (Note 2)
dVD/dt
VD=67%VDRM, Gate Open, TJ=110°C
10
V/µs
(dVCOM/dt)c (dI/dt)c=0.44A/ms, TJ=110°C
0.5
V/µs
On-State Voltage (Note 2)
Dynamic Resistance (Note 2)
VTM
RD
ITM=1.4 A, tp=380µs, TJ=25°C
Dynamic resistance, TJ=125°C
1.56
V
400 mꢀ
Notes: 1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R401-037.b
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