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SZ8-Y19-WW-C8

型号：

SZ8-Y19-WW-C8

品牌：

SEOUL[ Seoul Semiconductor ]

页数：

30 页

PDF大小：

1101 K

下载PDF手册
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
New Generation of WICOP  
High-Power LED – WICOP2 Z8 Y19  
SZ8-Y19-XX-XX (Cool, Neutral, Warm)  
RoHS  
Product Brief  
Description  
Features and Benefits  
•
The WICOP2 series is designed for high  
flux output applications with high current  
operation capability.  
•
•
•
•
•
•
Designed for high current operation  
Low Thermal Resistance  
A wide CCT range of 2,600~7,000K  
ANSI compliant Binning  
•
•
Compact footprint(1.81x1.81mm)  
enables system level cost saving  
RoHS compliant  
Phosphor film directly attached to  
chip surface  
It incorporates state of the art SMD  
design and low thermal resistant  
material.  
Key Applications  
.
•
•
•
Residential - Replacement lamps  
•
The WICOP2 is ideal light sources for  
directional lighting applications such as  
Spot Lights, various outdoor  
applications, automotive lightings and  
high performance torches .  
Commercial/Industrial – Retail Display  
Outdoor area - Flood/Street light, High Bay  
Table 1. Product Selection Table  
CCT  
CRI  
Part Number  
Color  
Min.  
Max.  
Min  
70  
80  
90  
70  
80  
90  
70  
80  
90  
SZ8-Y19-W0-C7  
SZ8-Y19-W0-C8  
SZ8-Y19-W0-C9  
SZ8-Y19-WN-C7  
SZ8-Y19-WN-C8  
SZ8-Y19-WN-C9  
SZ8-Y19-WW-C7  
SZ8-Y19-WW-C8  
SZ8-Y19-WW-C9  
Cool White  
Cool White  
4,700K  
4,700K  
4,700K  
3,700K  
3,700K  
3,700K  
2,600K  
2,600K  
2,600K  
7,000K  
7,000K  
7,000K  
4,700K  
4,700K  
4,700K  
3,700K  
3,700K  
3,700K  
Cool White  
Neutral White  
Neutral White  
Neutral White  
Warm White  
Warm White  
Warm White  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
1
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Table of Contents  
Index  
•
•
•
Product Brief  
1
2
3
Table of Contents  
Performance Characteristics  
•
•
•
Characteristics Graph  
Color bin structure  
7
12  
21  
Mechanical Dimensions  
•
•
•
Material Structure  
22  
23  
24  
Reflow Soldering Characteristics  
Emitter Tape & Reel Packaging  
•
•
•
Handling of Silicone Resin for LEDs  
Precaution For Use  
26  
27  
30  
Company Information  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
2
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Performance Characteristics  
Table 2. Electro Optical Characteristics, IF = 350mA (CRI 70)  
CRI [4]  
Ra  
,
Min. Luminous Flux [2]  
Min. Luminous Flux [2]  
ФV [3] [lm]@ 85 °C  
CCT [K] [1]  
ФV [3] [lm]  
Part Number  
Flux  
[lm]  
Flux  
[lm]  
Min.  
Max.  
Group  
700mA  
1.0A  
1.5A  
Min.  
@85 °C  
@25 °C  
W4  
W3  
W2  
W1  
W4  
W3  
W2  
W1  
W3  
W2  
W1  
V3  
160  
152  
142  
133  
160  
152  
142  
133  
152  
142  
133  
125  
175  
167  
156  
146  
175  
167  
156  
146  
167  
156  
146  
137  
285  
271  
254  
237  
285  
271  
254  
237  
271  
254  
237  
223  
376  
357  
335  
313  
376  
357  
335  
313  
357  
335  
313  
294  
510  
485  
455  
424  
510  
485  
455  
424  
485  
455  
424  
399  
SZ8-Y19-W0-C7  
SZ8-Y19-WN-C7  
SZ8-Y19-WW-C7  
4700  
3700  
2600  
7000  
70  
4700  
3700  
70  
70  
Notes :  
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.  
Color coordinate : 0.005, CCT 5% tolerance.  
(2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements.  
(3) ФV is the total luminous flux output as measured with an integrating sphere.  
(4) Tolerance is 2.0 on CRI measurements.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
3
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Performance Characteristics  
Table 2. Electro Optical Characteristics, IF = 350mA (CRI 80)  
CRI [4]  
Ra  
,
Min. Luminous Flux [2]  
Min. Luminous Flux [2]  
ФV [3] [lm]@ 85 °C  
CCT [K] [1]  
ФV [3] [lm]  
Part Number  
Flux  
[lm]  
Flux  
[lm]  
Min.  
Max.  
Group  
700mA  
1.0A  
1.5A  
Min.  
@85 °C  
@25 °C  
W3  
W2  
W1  
V3  
152  
142  
133  
125  
152  
142  
133  
125  
133  
125  
116  
109  
167  
156  
146  
137  
167  
156  
146  
137  
146  
137  
128  
120  
271  
254  
237  
223  
271  
254  
237  
223  
237  
223  
208  
195  
357  
335  
313  
294  
357  
335  
313  
294  
313  
294  
274  
257  
485  
455  
424  
399  
485  
455  
424  
399  
424  
399  
372  
349  
SZ8-Y19-W0-C8  
SZ8-Y19-WN-C8  
SZ8-Y19-WW-C8  
4700  
3700  
2600  
7000  
80  
W3  
W2  
W1  
V3  
4700  
3700  
80  
80  
W1  
V3  
V2  
V1  
Notes :  
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.  
Color coordinate : 0.005, CCT 5% tolerance.  
(2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements.  
(3) ФV is the total luminous flux output as measured with an integrating sphere.  
(4) Tolerance is 2.0 on CRI measurements.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
4
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Performance Characteristics  
Table 2. Electro Optical Characteristics, IF = 350mA (CRI 90)  
CRI [4]  
Ra  
,
Min. Luminous Flux [2]  
Min. Luminous Flux [2]  
ФV [3] [lm]@ 85 °C  
CCT [K] [1]  
ФV [3] [lm]  
Part Number  
Flux  
[lm]  
Flux  
[lm]  
Min.  
Max.  
Group  
700mA  
1.0A  
1.5A  
Min.  
@85 °C  
@25 °C  
W1  
V3  
V2  
V1  
W1  
V3  
V2  
V1  
V2  
V1  
U3  
U2  
133  
125  
116  
109  
133  
125  
116  
109  
116  
109  
102  
96  
146  
137  
128  
120  
146  
137  
128  
120  
128  
120  
112  
106  
237  
223  
208  
195  
237  
223  
208  
195  
208  
195  
182  
172  
313  
294  
274  
257  
313  
294  
274  
257  
274  
257  
240  
227  
424  
399  
372  
349  
424  
399  
372  
349  
372  
349  
326  
308  
SZ8-Y19-W0-C9  
SZ8-Y19-WN-C9  
SZ8-Y19-WW-C9  
4700  
3700  
2600  
7000  
90  
4700  
3700  
90  
90  
Notes :  
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram.  
Color coordinate : 0.005, CCT 5% tolerance.  
(2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements.  
(3) ФV is the total luminous flux output as measured with an integrating sphere.  
(4) Tolerance is 2.0 on CRI measurements.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
5
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Performance Characteristics  
Table 3. Absolute Maximum Ratings  
Value  
Parameter  
Symbol  
Unit  
Min.  
Typ.  
Max.  
1.5 [4]  
2.0 [3]  
Forward Current [1]  
IF  
-
-
A
Power Dissipation  
Junction Temperature  
Operating Temperature  
Storage Temperature  
Viewing angle  
PD  
Tj  
-
-
7.8  
145  
125  
125  
W
ºC  
-
-
Topr  
Tstg  
θ
- 40  
- 40  
-
-
ºC  
ºC  
140  
degree  
3 [3]  
4.5 [4]  
Thermal resistance (J to S) [2]  
ESD Sensitivity(HBM)  
RθJ-S  
-
-
K/W  
Class 2 JESD22-A114-E  
Notes :  
(1) At Junction Temperature 85℃ condition.  
(2) RθJ-S is tested at 700mA.  
(3) Using Metal PCB (Dielectric layer 5W/m·K and Cu pattern of 2oz).  
(4) Using Metal PCB (Normal type).  
•
Thermal resistance can be increased substantially depending on the heat sink design/operating  
condition, and the maximum possible driving current will decrease accordingly.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
6
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Characteristics Graph  
Fig 1. Color Spectrum  
Cool white  
Neutral white  
Warm white  
100  
80  
60  
40  
20  
0
350  
400  
450  
500  
550  
600  
650  
700  
750  
800  
Wavelength [nm]  
Fig 2. Typical Spatial Distribution  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
-90 -80 -70 -60 -50 -40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90  
Angular Displacement [degrees]  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
7
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Characteristics Graph  
Fig 3. Forward Voltage vs. Forward Current, Tj=85℃  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.4  
2.6  
2.8  
3.0  
3.2  
3.4  
Forward Voltage [V]  
Fig 4. Forward Current vs. Relative Luminous Flux, Tj=85℃  
240  
220  
200  
180  
160  
140  
120  
100  
80  
60  
40  
20  
0
0
200  
400  
600  
800 1000 1200 1400 1600 1800 2000  
Forward Current [mA]  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
8
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Characteristics Graph  
Fig 5. Forward Current vs. CIE X, Y Shift  
0.008  
CIE X  
CIE Y  
0.006  
0.004  
0.002  
0.000  
-0.002  
-0.004  
-0.006  
-0.008  
0
200  
400  
600  
800 1000 1200 1400 1600 1800 2000  
Forward Current [mA]  
Fig 6. Junction Temp. vs. CIE X, Y Shift  
0.008  
CIE X  
CIE Y  
0.006  
0.004  
0.002  
0.000  
-0.002  
-0.004  
-0.006  
-0.008  
25  
50  
75  
100  
125  
145  
Junction Temperature [oC]  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
9
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Characteristics Graph  
Fig 7. Relative Light Output vs. Junction Temperature, IF=700mA  
120  
100  
80  
60  
40  
20  
0
25  
50  
75  
100  
125  
145  
Junction Temperature [oC]  
Fig 8. Relative Forward Voltage vs. Junction Temperature, IF=700mA  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
-0.05  
-0.10  
-0.15  
-0.20  
145  
25  
50  
75  
100  
125  
Junction Temperature [oC]  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
10  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Characteristics Graph  
Fig 9. Maximum Forward Current vs. Ambient Temperature, Tj(max.)=145℃, IF=2A  
2200  
Rth(j-a)=7℃/W  
2000  
1800  
1600  
1400  
1200  
1000  
800  
Rth(j-a)=10℃/W  
Rth(j-a)=15℃/W  
600  
400  
200  
0
0
20  
40  
60  
80  
100  
120  
Ambient Temperature [oC]  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
11  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
Table 4. Bin Code description, IF=700mA, Tj=85℃ (CRI 70)  
Luminous Flux [lm]  
Typical Forward Voltage [VF] [1] *  
Color  
Part Number  
Chromaticity  
Coordinate  
Bin Code  
W1  
Min.  
237  
254  
271  
285  
237  
254  
271  
285  
223  
237  
254  
271  
Max.  
254  
271  
285  
299  
254  
271  
285  
299  
237  
254  
271  
285  
Bin Code  
Min.  
Max.  
G
2.75  
3.00  
W2  
Refer to page.  
15  
SZ8-Y19-W0-C7  
W3  
H
G
H
G
H
3.00  
2.75  
3.00  
2.75  
3.00  
3.25  
3.00  
3.25  
3.00  
3.25  
W4  
W1  
W2  
Refer to page.  
16~17  
SZ8-Y19-WN-C7  
SZ8-Y19-WW-C7  
W3  
W4  
V3  
W1  
Refer to page.  
18~20  
W2  
W3  
Table 5. Luminous Flux rank distribution (CRI 70)  
Available Rank  
CCT  
CIE  
A
Luminous Flux Rank  
6,000 ~ 7,000K  
5,300 – 6,000K  
4,700 ~ 5,300K  
4,200 ~ 4,700K  
3,700 ~ 4,200K  
3,200 ~ 3,700K  
2,900 ~ 3,200K  
2,600 ~ 2,900K  
V2  
V2  
V2  
V2  
V2  
V2  
V2  
V2  
V3  
V3  
V3  
V3  
V3  
V3  
V3  
V3  
W1  
W1  
W1  
W1  
W1  
W1  
W1  
W1  
W2  
W2  
W2  
W2  
W2  
W2  
W2  
W2  
W3  
W3  
W3  
W3  
W3  
W3  
W3  
W3  
W4  
W4  
W4  
W4  
W4  
W4  
W4  
W4  
B
C
D
E
F
G
H
Notes :  
(1) Tolerance is 0.06V on forward voltage measurements.  
(2) All measurements were made under the standardized environment of Seoul Semiconductor  
In order to ensure availability, single color rank will not be orderable.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
12  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
Table 4. Bin Code description, IF=700mA, Tj=85℃ (CRI 80)  
Luminous Flux [lm]  
Typical Forward Voltage [VF] [1] *  
Color  
Part Number  
Chromaticity  
Coordinate  
Bin Code  
V3  
Min.  
223  
237  
254  
271  
223  
237  
254  
271  
195  
208  
223  
237  
Max.  
237  
254  
271  
285  
237  
254  
271  
285  
208  
223  
237  
254  
Bin Code  
Min.  
Max.  
G
2.75  
3.00  
W1  
W2  
W3  
V3  
Refer to page.  
15  
SZ8-Y19-W0-C8  
H
G
H
G
H
3.00  
2.75  
3.00  
2.75  
3.00  
3.25  
3.00  
3.25  
3.00  
3.25  
W1  
W2  
W3  
V1  
Refer to page.  
16~17  
SZ8-Y19-WN-C8  
SZ8-Y19-WW-C8  
V2  
Refer to page.  
18~20  
V3  
W1  
Table 5. Luminous Flux rank distribution (CRI 80)  
Available Rank  
CCT  
CIE  
A
Luminous Flux Rank  
6,000 ~ 7,000K  
5,300 – 6,000K  
4,700 ~ 5,300K  
4,200 ~ 4,700K  
3,700 ~ 4,200K  
3,200 ~ 3,700K  
2,900 ~ 3,200K  
2,600 ~ 2,900K  
V1  
V1  
V1  
V1  
V1  
V1  
V1  
V1  
V2  
V2  
V2  
V2  
V2  
V2  
V2  
V2  
V3  
V3  
V3  
V3  
V3  
V3  
V3  
V3  
W1  
W1  
W1  
W1  
W1  
W1  
W1  
W1  
W2  
W2  
W2  
W2  
W2  
W2  
W2  
W2  
W3  
W3  
W3  
W3  
W3  
W3  
W3  
W3  
B
C
D
E
F
G
H
Notes :  
(1) Tolerance is 0.06V on forward voltage measurements.  
(2) All measurements were made under the standardized environment of Seoul Semiconductor  
In order to ensure availability, single color rank will not be orderable.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
13  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
Table 4. Bin Code description, IF=700mA, Tj=85℃ (CRI 90)  
Luminous Flux [lm]  
Typical Forward Voltage [VF] [1] *  
Color  
Part Number  
Chromaticity  
Coordinate  
Bin Code  
V1  
Min.  
195  
208  
223  
237  
195  
208  
223  
237  
172  
182  
195  
208  
Max.  
208  
223  
237  
254  
208  
223  
237  
254  
182  
195  
208  
223  
Bin Code  
Min.  
Max.  
G
2.75  
3.00  
V2  
Refer to page.  
15  
SZ8-Y19-W0-C9  
V3  
H
G
H
G
H
3.00  
2.75  
3.00  
2.75  
3.00  
3.25  
3.00  
3.25  
3.00  
3.25  
W1  
V1  
V2  
Refer to page.  
16~17  
SZ8-Y19-WN-C9  
SZ8-Y19-WW-C9  
V3  
W1  
U2  
U3  
Refer to page.  
18~20  
V1  
V2  
Table 5. Luminous Flux rank distribution (CRI 90)  
Available Rank  
CCT  
CIE  
A
Luminous Flux Rank  
6,000 ~ 7,000K  
5,300 – 6,000K  
4,700 ~ 5,300K  
4,200 ~ 4,700K  
3,700 ~ 4,200K  
3,200 ~ 3,700K  
2,900 ~ 3,200K  
2,600 ~ 2,900K  
U2  
U2  
U2  
U2  
U2  
U2  
U2  
U2  
U3  
U3  
U3  
U3  
U3  
U3  
U3  
U3  
V1  
V1  
V1  
V1  
V1  
V1  
V1  
V1  
V2  
V2  
V2  
V2  
V2  
V2  
V2  
V2  
V3  
V3  
V3  
V3  
V3  
V3  
V3  
V3  
W1  
W1  
W1  
W1  
W1  
W1  
W1  
W1  
B
C
D
E
F
G
H
Notes :  
(1) Tolerance is 0.06V on forward voltage measurements.  
(2) All measurements were made under the standardized environment of Seoul Semiconductor  
In order to ensure availability, single color rank will not be orderable.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
14  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
CIE Chromaticity Diagram (Cool white), Tj=85℃, IF=700mA  
4700K  
0.38  
0.36  
0.34  
0.32  
0.30  
5000K  
C1  
C3  
C5  
5300K  
B1  
C0  
5600K  
C2  
C4  
6000K  
B0  
B3  
B5  
6500K  
A1  
A3  
A5  
B2  
B4  
7000K  
A0  
A2  
A4  
0.30  
0.32  
0.34  
0.36  
CIE (x)  
A0  
A4  
B2  
C0  
C4  
A1  
A5  
B3  
C1  
C5  
A2  
A3  
B1  
B5  
C3  
CIE x  
0.3028  
0.3041  
0.3126  
0.3115  
CIE y  
0.3304  
0.3240  
0.3324  
0.3393  
CIE x  
CIE y  
CIE x  
0.3041  
0.3055  
0.3136  
0.3126  
CIE y  
CIE x  
0.3126  
0.3136  
0.3216  
0.3210  
CIE y  
0.3324  
0.3256  
0.3334  
0.3408  
0.3115  
0.3126  
0.3210  
0.3205  
0.3393  
0.3324  
0.3408  
0.3481  
0.3240  
0.3177  
0.3256  
0.3324  
B0  
B4  
C2  
CIE x  
0.3055  
0.3068  
0.3146  
0.3136  
CIE y  
0.3177  
0.3113  
0.3187  
0.3256  
CIE x  
0.3136  
0.3146  
0.3221  
0.3216  
CIE y  
0.3256  
0.3187  
0.3261  
0.3334  
CIE x  
0.3207  
0.3212  
0.3293  
0.3292  
CIE y  
0.3462  
0.3389  
0.3461  
0.3539  
CIE x  
0.3292  
0.3293  
0.3373  
0.3376  
CIE y  
0.3539  
0.3461  
0.3534  
0.3616  
CIE x  
0.3212  
0.3217  
0.3293  
0.3293  
CIE y  
0.3389  
0.3316  
0.3384  
0.3461  
CIE x  
0.3293  
0.3293  
0.3369  
0.3373  
CIE y  
0.3461  
0.3384  
0.3451  
0.3534  
CIE x  
0.3217  
0.3222  
0.3294  
0.3293  
CIE y  
0.3316  
0.3243  
0.3306  
0.3384  
CIE x  
0.3293  
0.3294  
0.3366  
0.3369  
CIE y  
0.3384  
0.3306  
0.3369  
0.3451  
CIE x  
0.3376  
0.3373  
0.3456  
0.3463  
CIE y  
0.3616  
0.3534  
0.3601  
0.3687  
CIE x  
0.3463  
0.3456  
0.3539  
0.3552  
CIE y  
0.3687  
0.3601  
0.3669  
0.3760  
CIE x  
0.3373  
0.3369  
0.3448  
0.3456  
CIE y  
0.3534  
0.3451  
0.3514  
0.3601  
CIE x  
0.3456  
0.3448  
0.3526  
0.3539  
CIE y  
0.3601  
0.3514  
0.3578  
0.3669  
CIE x  
0.3369  
0.3366  
0.3440  
0.3448  
CIE y  
0.3451  
0.3369  
0.3428  
0.3514  
CIE x  
0.3448  
0.3440  
0.3514  
0.3526  
CIE y  
0.3514  
0.3428  
0.3487  
0.3578  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
15  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
CIE Chromaticity Diagram (Neutral White), Tj=85℃, IF=700mA  
0.39  
0.38  
0.37  
0.36  
0.35  
0.34  
4200K  
4500K  
D31  
D41  
D42  
D43  
D44  
4700K  
D11  
D21  
D22  
D23  
D24  
D32  
D33  
D34  
D12  
D13  
D14  
0.350  
0.355  
0.360  
0.365  
0.370  
0.375  
CIE X  
D11  
D12  
D13  
D14  
D21  
D22  
D23  
D24  
D31  
D32  
D33  
D34  
D41  
D42  
D43  
D44  
CIE x  
0.3548  
0.3539  
0.3584  
0.3595  
CIE y  
0.3736  
0.3668  
0.3701  
0.3770  
CIE x  
CIE y  
CIE x  
CIE y  
CIE x  
CIE y  
0.3839  
0.3767  
0.3800  
0.3874  
0.3595  
0.3584  
0.3628  
0.3641  
0.3770  
0.3701  
0.3733  
0.3804  
0.3641  
0.3628  
0.3674  
0.3689  
0.3804  
0.3733  
0.3767  
0.3839  
0.3689  
0.3674  
0.3720  
0.3736  
CIE x  
0.3539  
0.3530  
0.3573  
0.3584  
CIE y  
0.3668  
0.3601  
0.3632  
0.3701  
CIE x  
0.3584  
0.3573  
0.3616  
0.3628  
CIE y  
0.3701  
0.3632  
0.3663  
0.3733  
CIE x  
0.3628  
0.3616  
0.3659  
0.3674  
CIE y  
0.3733  
0.3663  
0.3694  
0.3767  
CIE x  
0.3674  
0.3659  
0.3703  
0.3720  
CIE y  
0.3767  
0.3694  
0.3726  
0.3800  
CIE x  
0.3530  
0.3520  
0.3562  
0.3573  
CIE y  
0.3601  
0.3533  
0.3562  
0.3632  
CIE x  
0.3573  
0.3562  
0.3603  
0.3616  
CIE y  
0.3632  
0.3562  
0.3592  
0.3663  
CIE x  
0.3616  
0.3603  
0.3645  
0.3659  
CIE y  
0.3663  
0.3592  
0.3622  
0.3694  
CIE x  
0.3659  
0.3645  
0.3687  
0.3703  
CIE y  
0.3694  
0.3622  
0.3652  
0.3726  
CIE x  
0.3520  
0.3511  
0.3551  
0.3562  
CIE y  
0.3533  
0.3465  
0.3493  
0.3562  
CIE x  
0.3562  
0.3551  
0.3590  
0.3603  
CIE y  
0.3562  
0.3493  
0.3521  
0.3592  
CIE x  
0.3603  
0.3590  
0.3630  
0.3645  
CIE y  
0.3592  
0.3521  
0.3550  
0.3622  
CIE x  
0.3645  
0.3630  
0.3670  
0.3687  
CIE y  
0.3622  
0.3550  
0.3578  
0.3652  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
16  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
CIE Chromaticity Diagram (Neutral White), Tj=85℃, IF=700mA  
0.41  
3700K  
0.40  
E41  
4000K  
E31  
E42  
4200K  
E11  
E21  
E22  
E23  
0.39  
0.38  
0.37  
0.36  
0.35  
E32  
E43  
E12  
E13  
E33  
E34  
E44  
E24  
E14  
0.36  
0.37  
0.38  
0.39  
0.40  
CIE X  
E11  
E12  
E13  
E14  
E21  
E22  
E23  
E24  
E31  
E32  
E33  
E34  
E41  
E42  
E43  
E44  
CIE x  
0.3736  
0.3720  
0.3784  
0.3804  
CIE y  
0.3874  
0.3800  
0.3841  
0.3917  
CIE x  
CIE y  
CIE x  
0.3871  
0.3849  
0.3914  
0.3939  
CIE y  
CIE x  
0.3939  
0.3914  
0.3979  
0.4006  
CIE y  
0.4002  
0.3922  
0.3962  
0.4044  
0.3804  
0.3784  
0.3849  
0.3871  
0.3917  
0.3841  
0.3881  
0.3959  
0.3959  
0.3881  
0.3922  
0.4002  
CIE x  
0.3720  
0.3703  
0.3765  
0.3784  
CIE y  
0.3800  
0.3726  
0.3765  
0.3841  
CIE x  
0.3784  
0.3765  
0.3828  
0.3849  
CIE y  
0.3841  
0.3765  
0.3803  
0.3881  
CIE x  
0.3849  
0.3828  
0.3890  
0.3914  
CIE y  
0.3881  
0.3803  
0.3842  
0.3922  
CIE x  
0.3914  
0.3890  
0.3952  
0.3979  
CIE y  
0.3922  
0.3842  
0.3880  
0.3962  
CIE x  
0.3703  
0.3687  
0.3746  
0.3765  
CIE y  
0.3726  
0.3652  
0.3689  
0.3765  
CIE x  
0.3765  
0.3746  
0.3806  
0.3828  
CIE y  
0.3765  
0.3689  
0.3725  
0.3803  
CIE x  
0.3828  
0.3806  
0.3865  
0.3890  
CIE y  
0.3803  
0.3725  
0.3762  
0.3842  
CIE x  
0.3890  
0.3865  
0.3925  
0.3952  
CIE y  
0.3842  
0.3762  
0.3798  
0.3880  
CIE x  
0.3687  
0.3670  
0.3727  
0.3746  
CIE y  
0.3652  
0.3578  
0.3613  
0.3689  
CIE x  
0.3746  
0.3727  
0.3784  
0.3806  
CIE y  
0.3689  
0.3613  
0.3647  
0.3725  
CIE x  
0.3806  
0.3784  
0.3841  
0.3865  
CIE y  
0.3725  
0.3647  
0.3682  
0.3762  
CIE x  
0.3865  
0.3841  
0.3898  
0.3925  
CIE y  
0.3762  
0.3682  
0.3716  
0.3798  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
17  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
CIE Chromaticity Diagram (Warm White), Tj=85℃, IF=700mA  
0.42  
3200K  
3500K  
0.41  
0.40  
0.39  
0.38  
0.37  
F41  
F31  
3700K  
F11  
F21  
F42  
F32  
F44  
F22  
F43  
F12  
F33  
F23  
F13  
F34  
F24  
F14  
0.39  
0.40  
0.41  
0.42  
0.43  
CIE X  
F11  
F12  
F13  
F14  
F21  
F31  
F41  
F42  
F43  
F44  
CIE x  
0.3996  
0.3969  
0.4042  
0.4071  
CIE y  
0.4015  
0.3934  
0.3969  
0.4052  
CIE x  
0.4071  
0.4042  
0.4114  
0.4146  
CIE y  
CIE x  
CIE y  
0.4089  
0.4005  
0.4041  
0.4127  
CIE x  
0.4223  
0.4187  
0.4261  
0.4299  
CIE y  
0.4127  
0.4041  
0.4077  
0.4165  
0.4052  
0.3969  
0.4005  
0.4089  
0.4146  
0.4114  
0.4187  
0.4223  
F22  
F23  
F24  
F32  
F33  
F34  
CIE x  
0.3969  
0.3943  
0.4012  
0.4042  
CIE y  
0.3934  
0.3853  
0.3886  
0.3969  
CIE x  
0.4042  
0.4012  
0.4082  
0.4114  
CIE y  
0.3969  
0.3886  
0.3920  
0.4005  
CIE x  
0.4114  
0.4082  
0.4152  
0.4187  
CIE y  
0.4005  
0.3920  
0.3955  
0.4041  
CIE x  
0.4187  
0.4152  
0.4223  
0.4261  
CIE y  
0.4041  
0.3955  
0.3990  
0.4077  
CIE x  
0.3943  
0.3916  
0.3983  
0.4012  
CIE y  
0.3853  
0.3771  
0.3803  
0.3886  
CIE x  
0.4012  
0.3983  
0.4049  
0.4082  
CIE y  
0.3886  
0.3803  
0.3836  
0.3920  
CIE x  
0.4082  
0.4049  
0.4117  
0.4152  
CIE y  
0.3920  
0.3836  
0.3869  
0.3955  
CIE x  
0.4152  
0.4117  
0.4185  
0.4223  
CIE y  
0.3955  
0.3869  
0.3902  
0.3990  
CIE x  
0.3916  
0.3889  
0.3953  
0.3983  
CIE y  
0.3771  
0.3690  
0.3721  
0.3803  
CIE x  
0.3983  
0.3953  
0.4017  
0.4049  
CIE y  
0.3803  
0.3721  
0.3751  
0.3836  
CIE x  
0.4049  
0.4017  
0.4082  
0.4117  
CIE y  
0.3836  
0.3751  
0.3783  
0.3869  
CIE x  
0.4117  
0.4082  
0.4147  
0.4185  
CIE y  
0.3869  
0.3783  
0.3814  
0.3902  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
18  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
CIE Chromaticity Diagram (Warm White), Tj=85℃, IF=700mA  
0.43  
2900K  
3000K  
3200K  
G41  
0.42  
0.41  
0.40  
0.39  
0.38  
G31  
G42  
G21  
G32  
G43  
G11  
G22  
G33  
G44  
G12  
G23  
G34  
G13  
G24  
G14  
0.41  
0.42  
0.43  
0.44  
0.45  
0.46  
CIE X  
G11  
G12  
G13  
G14  
G21  
G22  
G23  
G24  
G31  
G32  
G33  
G34  
G41  
G42  
G43  
G44  
CIE x  
0.4299  
0.4261  
0.4324  
0.4365  
CIE y  
0.4165  
0.4077  
0.4100  
0.4189  
CIE x  
0.4364  
0.4324  
0.4387  
0.4430  
CIE y  
0.4188  
0.4099  
0.4122  
0.4212  
CIE x  
0.4430  
0.4387  
0.4451  
0.4496  
CIE y  
0.4212  
0.4122  
0.4145  
0.4236  
CIE x  
0.4496  
0.4451  
0.4514  
0.4562  
CIE y  
0.4236  
0.4145  
0.4168  
0.4260  
CIE x  
0.4261  
0.4223  
0.4284  
0.4324  
CIE y  
0.4077  
0.3990  
0.4011  
0.4100  
CIE x  
0.4324  
0.4284  
0.4345  
0.4387  
CIE y  
0.4100  
0.4011  
0.4033  
0.4122  
CIE x  
0.4387  
0.4345  
0.4406  
0.4451  
CIE y  
0.4122  
0.4033  
0.4055  
0.4145  
CIE x  
0.4451  
0.4406  
0.4468  
0.4515  
CIE y  
0.4145  
0.4055  
0.4077  
0.4168  
CIE x  
0.4223  
0.4185  
0.4243  
0.4284  
CIE y  
0.3990  
0.3902  
0.3922  
0.4011  
CIE x  
0.4284  
0.4243  
0.4302  
0.4345  
CIE y  
0.4011  
0.3922  
0.3943  
0.4033  
CIE x  
0.4345  
0.4302  
0.4361  
0.4406  
CIE y  
0.4033  
0.3943  
0.3964  
0.4055  
CIE x  
0.4406  
0.4361  
0.4420  
0.4468  
CIE y  
0.4055  
0.3964  
0.3985  
0.4077  
CIE x  
0.4243  
0.4203  
0.4147  
0.4185  
CIE y  
0.3922  
0.3834  
0.3814  
0.3902  
CIE x  
0.4302  
0.4259  
0.4203  
0.4243  
CIE y  
0.3943  
0.3853  
0.3834  
0.3922  
CIE x  
0.4302  
0.4259  
0.4316  
0.4361  
CIE y  
0.3943  
0.3853  
0.3873  
0.3964  
CIE x  
0.4361  
0.4316  
0.4373  
0.4420  
CIE y  
0.3964  
0.3873  
0.3893  
0.3985  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
19  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Color Bin Structure  
CIE Chromaticity Diagram (Warm White), Tj=85℃, IF=700mA  
0.44  
2600K  
2700K  
0.43  
2900K  
H41  
H31  
H42  
H21  
H32  
H43  
H11  
0.42  
0.41  
0.40  
0.39  
0.38  
H22  
H33  
H12  
H23  
H13  
H24  
H44  
H34  
H14  
0.43  
0.44  
0.45  
0.46  
0.47  
0.48  
CIE X  
H11  
H12  
H13  
H14  
H21  
H22  
H23  
H24  
H31  
H32  
H33  
H34  
H41  
H42  
H43  
H44  
CIE x  
0.4562  
0.4515  
0.4575  
0.4625  
CIE y  
0.4260  
0.4168  
0.4182  
0.4275  
CIE x  
0.4625  
0.4575  
0.4636  
0.4687  
CIE y  
CIE x  
CIE y  
CIE x  
CIE y  
0.4304  
0.4211  
0.4225  
0.4319  
0.4275  
0.4182  
0.4197  
0.4289  
0.4687  
0.4636  
0.4697  
0.4750  
0.4289  
0.4197  
0.4211  
0.4304  
0.4750  
0.4697  
0.4758  
0.4810  
CIE x  
0.4515  
0.4468  
0.4526  
0.4575  
CIE y  
0.4168  
0.4077  
0.4090  
0.4182  
CIE x  
0.4575  
0.4526  
0.4585  
0.4636  
CIE y  
0.4182  
0.4090  
0.4104  
0.4197  
CIE x  
0.4636  
0.4585  
0.4644  
0.4697  
CIE y  
0.4197  
0.4104  
0.4118  
0.4211  
CIE x  
0.4697  
0.4644  
0.4703  
0.4758  
CIE y  
0.4211  
0.4118  
0.4132  
0.4225  
CIE x  
0.4468  
0.4420  
0.4477  
0.4526  
CIE y  
0.4077  
0.3985  
0.3998  
0.4090  
CIE x  
0.4526  
0.4477  
0.4534  
0.4585  
CIE y  
0.4090  
0.3998  
0.4012  
0.4104  
CIE x  
0.4585  
0.4534  
0.4591  
0.4644  
CIE y  
0.4104  
0.4012  
0.4025  
0.4118  
CIE x  
0.4644  
0.4591  
0.4648  
0.4703  
CIE y  
0.4118  
0.4025  
0.4038  
0.4132  
CIE x  
0.4420  
0.4373  
0.4428  
0.4477  
CIE y  
0.3985  
0.3893  
0.3906  
0.3998  
CIE x  
0.4477  
0.4428  
0.4483  
0.4534  
CIE y  
0.3998  
0.3906  
0.3919  
0.4012  
CIE x  
0.4534  
0.4483  
0.4538  
0.4591  
CIE y  
0.4012  
0.3919  
0.3932  
0.4025  
CIE x  
0.4591  
0.4538  
0.4593  
0.4648  
CIE y  
0.4025  
0.3932  
0.3944  
0.4038  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
20  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Mechanical Dimensions  
Cathode  
1,41  
< TOP >  
< Bottom >  
Cathode  
0,22  
Anode  
1,41  
< Side >  
< Recommended Solder Pattern >  
Anode  
Cathode  
< Inner circuit >  
(1) All dimensions are in millimeters.  
(2) Scale : none  
(3) Undefined tolerance is ±0.2mm  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
21  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Material Structure  
No.  
①
List  
Material  
Encapsulation  
Chip Source  
Solder-PAD  
Silicone, Phosphor  
GaN ON SAPPHIRE  
Metal (Au)  
②
③
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
22  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Reflow Soldering Characteristics  
IPC/JEDEC J-STD-020  
Profile Feature  
Average ramp-up rate (Tsmax to Tp)  
Pb-Free Assembly  
3° C/second max.  
Preheat  
- Temperature Min (Tsmin)  
- Temperature Max (Tsmax)  
- Time (Tsmin to Tsmax) (ts)  
150 °C  
180 °C  
80-120 seconds  
Time maintained above:  
- Temperature (TL)  
- Time (tL)  
217~220°C  
80-100 seconds  
Peak Temperature (Tp)  
250~255℃  
Time within 5°C of actual Peak  
Temperature (tp)2  
20-40 seconds  
Ramp-down Rate  
6 °C/second max.  
8 minutes max.  
Time 25°C to Peak Temperature  
Atmosphere  
Nitrogen (O2<1000ppm)  
Caution  
(1) Reflow soldering is recommended not to be done more than two times. In the case of more than  
24 hours passed soldering after first, LEDs will be damaged.  
(2) Re-soldering should not be done after the LEDs have been soldered. If re-soldering is  
unavoidable, LED`s characteristics should be carefully checked before and after such repair..  
(3) Do not put stress on the LEDs during heating.  
(4) After reflow, do not clean PCB by water or solvent.  
SMT recommendation  
(1) After reflow, Over 80% reflectance of PSR is recommended. Tamura RPW-8000-xx  
(2) Solder paste materials (SAC 305, No Cleaning Paste ) Senju M705-GRN360-KV  
(3) We recommend TOV Test 1.8v~2.8v at 1uA (per LED)  
(4) We recommend IR Test 0~1uA at -5V (per LED)  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
23  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Emitter Tape & Reel Packaging  
Size  
A0 : 2.18±0.05  
B0 : 2.18±0.05  
K0 : 0.81±0.05  
11.4±1.0  
9±0.3  
180  
2
22  
13  
( Tolerance: ±0.2, Unit: mm )  
Notes :  
(1) Quantity : 1,500pcs/Reel  
(empty slot possible in taping reel)  
(2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm  
(3) Adhesion Strength of Cover Tape : Adhesion strength to be 0.1-0.7N when the cover  
tape is turned off from the carrier tape at the angle of 10º to the carrier tape  
(4) Package : P/N, Manufacturing data Code No. and quantity to be indicated on a damp  
proof Package  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
24  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Packaging Information  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
25  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Handling of Silicone Resin for LEDs  
(1) During processing, mechanical stress on the surface should be minimized as much as possible.  
Sharp objects of all types should not be used to pierce the sealing compound.  
(2) Do not use tweezers to pick up or handle WICOP2 LEDs.  
A vacuum pick up should only be used.  
(3) When populating boards in SMT production, there are basically no restrictions regarding the form  
of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be  
prevented. This is assured by choosing a pick and place nozzle which is smaller than the LED’s  
area.  
(4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These  
conditions must be considered during the handling of such devices. Compared to standard  
encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As  
mentioned previously, the increased sensitivity to dust requires special care during processing.  
(5) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this  
product with acid or sulfur material in sealed space.  
(6) Avoid leaving fingerprints on silicone resin parts.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
26  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Precaution for Use  
(1) Storage  
To avoid the moisture penetration, we recommend storing LEDs in a dry box with a desiccant . The  
recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%.  
(2) Use Precaution after Opening the Packaging  
Use proper SMD techniques when the LED is to be soldered dipped as separation of the lens may  
affect the light output efficiency.  
Pay attention to the following:  
a. Recommend conditions after opening the package  
- Sealing / Temperature : 5 ~ 30℃ Humidity : less than RH60%  
b. If the package has been opened more than 1 year (MSL 2) or the color of  
the desiccant changes, components should be dried for 10-24hr at 65±5℃  
(3) Do not apply mechanical force or excess vibration during the cooling process to normal  
temperature after soldering.  
(4) Do not rapidly cool device after soldering.  
(5) Components should not be mounted on warped (non coplanar) portion of PCB.  
(6) Radioactive exposure is not considered for the products listed here in.  
(7) Gallium arsenide is used in some of the products listed in this publication. These products are  
dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the  
liquid or inhale the gas generated by such products when chemically disposed of.  
(8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.  
(9) When the LEDs are in operation the maximum current should be decided after measuring the  
package temperature.  
(10) The appearance and specifications of the product may be modified for improvement without  
notice.  
(11) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
27  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Precaution for Use  
(12) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures ca  
n penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. T  
he result can be a significant loss of light output from the fixture. Knowledge of the properties of the m  
aterials selected to be used in the construction of fixtures can help prevent these issues.  
(13) The slug is electrically isolated.  
(14) Attaching LEDs, do not use adhesives that outgas organic vapor.  
(15) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the rev  
erse voltage is applied to LED, migration can be generated resulting in LED damage.  
(16) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is  
a list of suggestions that Seoul Semiconductor purposes to minimize these effects.  
a. ESD (Electro Static Discharge)  
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come  
into contact. While most ESD events are considered harmless, it can be an expensive problem in  
many industrial environments during production and storage. The damage from ESD to an LEDs may  
cause the product to demonstrate unusual characteristics such as:  
- Increase in reverse leakage current lowered turn-on voltage  
- Abnormal emissions from the LED at low current  
The following recommendations are suggested to help minimize the potential for an ESD event.  
One or more recommended work area suggestions:  
- Ionizing fan setup  
- ESD table/shelf mat made of conductive materials  
- ESD safe storage containers  
One or more personnel suggestion options:  
- Antistatic wrist-strap  
- Antistatic material shoes  
- Antistatic clothes  
Environmental controls:  
- Humidity control (ESD gets worse in a dry environment)  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
28  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Precaution for Use  
b. EOS (Electrical Over Stress)  
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is  
subjected to a current or voltage that is beyond the maximum specification limits of the device.  
The effects from an EOS event can be noticed through product performance like:  
- Changes to the performance of the LED package  
(If the damage is around the bond pad area and since the package is completely encapsulated  
the package may turn on but flicker show severe performance degradation.)  
- Changes to the light output of the luminaire from component failure  
- Components on the board not operating at determined drive power  
Failure of performance from entire fixture due to changes in circuit voltage and current across total  
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed  
to electrical overstress as the failure modes have been investigated to vary, but there are some  
common signs that will indicate an EOS event has occurred:  
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)  
- Damage to the bond pads located on the emission surface of the LED package  
(shadowing can be noticed around the bond pads while viewing through a microscope)  
- Anomalies noticed in the encapsulation and phosphor around the bond wires.  
- This damage usually appears due to the thermal stress produced during the EOS event.  
c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:  
- A surge protection circuit  
- An appropriately rated over voltage protection device  
- A current limiting device  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
29  
Product Data Sheet  
SZ8-Y19-XX-XX - High-power LED  
Company Information  
Published by  
Seoul Semiconductor © 2013 All Rights Reserved.  
Company Information  
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of  
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage  
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than  
10,000 patents globally, while offering a wide range of LED technology and production capacity in  
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT -  
Multi-Junction Technology" a proprietary family of high-voltage LEDs.  
The company’s broad product portfolio includes a wide array of package and device choices such as  
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type  
LEDs as well as custom modules, displays, and sensors.  
Legal Disclaimer  
Information in this document is provided in connection with Seoul Semiconductor products. With  
respect to any examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties  
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual  
property rights of any third party. The appearance and specifications of the product can be changed  
to improve the quality and/or performance without notice.  
www.seoulsemicon.com  
Rev2.1, Apr 15, 2016  
30  
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