找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

TYN610

型号:

TYN610

描述:

SCR[ SCR ]

品牌:

STMICROELECTRONICS[ ST ]

页数:

4 页

PDF大小:

232 K

®
TYN210 ---> TYN1010  
SCR  
A
FEATURES  
High surge capability  
High on-state current  
High stability and reliability  
G
K
DESCRIPTION  
The TYN210 ---> TYN1010 Family of Silicon  
Controlled Rectifiers uses a high performance  
glass passivated technology.  
K
A
G
This general purpose Family of Silicon Controlled  
Rectifiers is designed for power supplies up to  
400Hz on resistive or inductive load.  
TO-220AB  
ABSOLUTE RATINGS (limiting values)  
Symbol  
IT(RMS)  
IT(AV)  
Parameter  
Value  
10  
Unit  
A
RMS on-state current (180° conduction angle)  
Tc = 100°C  
Tc = 100°C  
Average on-state current  
6.4  
A
(180° conduction angle, single phase circuit)  
ITSM  
Non repetitive surge peak on-state current  
(Tj initial = 25°C)  
tp = 8.3ms  
tp = 10ms  
tp = 10ms  
105  
100  
50  
A
I2t  
I2t value  
A2s  
dI/dt  
Critical rate of rise of on-state current  
Gate supply: IG = 100mA dIG/dt = 1A/µs  
50  
A/µs  
Tstg  
Tj  
Storage and operating junction temperature range  
-40 to +150  
-40 to +125  
°C  
°C  
Tl  
Maximum lead soldering temperature during 10s at 4.5mm from case  
260  
TYN  
Symbol  
Parameter  
Unit  
210  
410  
610  
810  
1010  
VDRM  
VRRM  
Repetitive peak off-state voltage  
Tj = 125°C  
200  
400  
600  
800  
1000  
V
September 2001 - Ed: 1A  
1/4  
TYN210 ---> TYN1010  
THERMAL RESISTANCE  
Symbol  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Rth (j-a)  
Junction to ambient  
Rth (j-c) DC Junction to case for DC  
2.5  
GATE CHARACTERISTICS (maximum values)  
G(AV) = 1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) VRGM = 5V  
P
ELECTRICAL CHARACTERISTICS  
Symbol  
IGT  
Test conditions  
Value  
Unit  
mA  
V
VD = 12V (DC) RL = 33Ω  
VD = 12V (DC) RL = 33Ω  
Tj = 25°C  
Tj = 25°C  
Tj =110°C  
Tj = 25°C  
MAX.  
MAX.  
MIN.  
TYP.  
15  
1.5  
0.2  
2
VGT  
VGD  
tgt  
VD = VDRM  
RL = 3.3kΩ  
V
VD = VDRM IG = 40mA  
dIG/dt = 0.5A/µs  
µs  
IL  
IH  
IG = 1.2IGT  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
Tj = 110°C  
Tj = 110°C  
TYP.  
MAX.  
MAX.  
MAX.  
MAX.  
MIN.  
50  
30  
mA  
mA  
V
IT = 100mA Gate open  
VTM  
ITM = 20A  
tp = 380µs  
1.6  
0.01  
2
IDRM  
IRRM  
VDRM rated  
mA  
V
RRM rated  
dV/dt  
tq  
Linear slope up to  
VD = 67% VDRM gate open  
200  
V/µs  
VD=67%VDRM ITM= 20A VR= 25V  
Tj = 110°C  
TYP.  
70  
µs  
dITM/dt=30 A/µs dVD/dt= 50V/µs  
Fig. 1: Maximum average power dissipation ver-  
sus average on-state current.  
Fig. 2: Correlation between maximum average  
power dissipation and maximum allowable temper-  
atures (Tamb and Tcase) for different thermal  
resistances heatsink + contact.  
P (W)  
P (W)  
Tcase (oC)  
12  
12  
10  
8
O
Rth = 0 o C/W  
360  
2o C/W  
4o C/W  
6o C/W  
10  
-100  
-105  
-110  
-115  
-120  
-125  
DC  
8
= 180o  
6
6
=
120o  
=
180o  
4
2
0
=
90 o  
4
=
60o  
2
=
30o  
I
(A)  
T(AV)  
Tamb (oC)  
0
0
0
1
2
3
4
5
6
7
8
9
20  
40  
60  
80  
100 120 140  
2/4  
TYN210 ---> TYN1010  
Fig. 3: Average on-state current versus case tem-  
perature.  
Fig. 4: Relative variation of thermal impedance  
versus pulse duration.  
I
(A)  
Zth/Rth  
1
T(AV)  
12  
10  
8
DC  
Zth(j-c)  
0.1  
Zth(j-a)  
6
=
180o  
4
2
Tcase (oC)  
10 20 30 40 50 60 70 80 90 100 110 120 130  
tp(s)  
1E+2 5E+2  
0.01  
1E-3  
0
0
1E-2  
1E-1  
1E+0  
1E+1  
Fig. 6: Non repetitive surge peak on-state current  
versus number of cycles.  
Fig. 5: Relative variation of gate trigger current  
versus junction temperature.  
Fig. 7: Non repetitive surge peak on-state current  
for a sinusoidal pulse with width: t 10ms, and cor-  
responding value of I2t.  
Fig. 8: On-state characteristics (maximum values).  
3/4  
TYN210 ---> TYN1010  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
B
C
b2  
A
15.20  
15.90 0.598  
0.625  
a1  
3.75  
0.147  
L
a2 13.00  
10.00  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
F
B
I
A
b1 0.61  
b2 1.23  
l4  
C
4.40  
c1 0.49  
c2 2.40  
c2  
a1  
e
F
I
2.40  
6.20  
3.75  
l3  
l2  
a2  
I4 15.80 16.40 16.80 0.622 0.646 0.661  
L
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
b1  
M
l2  
l3  
M
c1  
e
2.60  
0.102  
OTHER INFORMATION  
Ordering type  
Marking  
Package  
Weight  
2.3 g  
Base qty  
250  
Delivery mode  
TYNxx10  
TYNxx10  
TO-220AB  
Bulk  
Epoxy meets UL94,V0  
Cooling method: C  
Recommended torque value: 0.8 m.N.  
Maximum torque value: 1 m.N.  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
4/4  
厂商 型号 描述 页数 下载

STMICROELECTRONICS

TYN05 晶闸管[ THYRISTORS ] 4 页

STMICROELECTRONICS

TYN0510 SCR[ SCR ] 4 页

STMICROELECTRONICS

TYN0510/F2 [ 10A, 50V, SCR, TO-220, TO-220, 3 PIN ] 4 页

STMICROELECTRONICS

TYN0510/F3 [ 10A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

STMICROELECTRONICS

TYN0510/F5 [ 10A, 50V, SCR, TO-220, TO-220, 3 PIN ] 4 页

STMICROELECTRONICS

TYN0512 高浪涌能力高通态电流高稳定性和可靠性[ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ] 5 页

STMICROELECTRONICS

TYN0512/F3 [ 12A, 50V, SCR, TO-220, TO-220, 2 PIN ] 5 页

STMICROELECTRONICS

TYN0512/F5 [ 12A, 50V, SCR, TO-220, TO-220, 3 PIN ] 5 页

STMICROELECTRONICS

TYN0516 可控硅16A[ 16A SCRs ] 7 页

STMICROELECTRONICS

TYN0516/F3 [ 16A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.204295s