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TYN840

型号:

TYN840

描述:

可控硅40A[ 40A SCRs ]

品牌:

STMICROELECTRONICS[ ST ]

页数:

4 页

PDF大小:

52 K

TYNx40 Series  
®
STANDARD  
40A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
40  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 to 1000  
35  
V
DRM RRM  
A
I
mA  
GT  
DESCRIPTION  
K
The TYNx40 series is suitable for applications  
where in-rush current conditions are critical, such  
as overvoltage crowbar protection circuits in  
power supplies, in-rush current limiting circuits,  
solid state relays (in back to back configuration),  
welding equipment, high power motor control  
circuits.  
A
G
TO-220AB  
(TYNx40)  
Using clip assembly technology, they provide a  
superior performance in high surge current capa-  
bilites.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
40  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 95°C  
Tc = 95°C  
A
A
IT  
Average on-state current (180° conduction angle)  
(AV)  
TSM  
25  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
480  
460  
Tj = 25°C  
A
tp = 10 ms  
2
²
²
Tj = 25°C  
1060  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 60 Hz  
tp = 20 µs  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2002 - Ed: 4A  
1/4  
TYNx40 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
Value  
Unit  
I
MIN.  
MAX.  
MAX.  
MIN.  
3.5  
35  
GT  
mA  
V
V
= 12 V  
R = 33 Ω  
D
L
V
1.3  
V
V
GT  
V
Tj = 125°C  
= V  
R = 3.3 kΩ  
0.2  
75  
GD  
D
DRM  
L
I
I = 500 mA Gate open  
MAX.  
MAX.  
MIN.  
mA  
mA  
V/µs  
V
H
T
I
I = 1.2 I  
G
150  
1000  
1.6  
0.85  
10  
L
GT  
= 67 % V  
V
I
Gate open  
= 80 A tp = 380 µs  
dV/dt  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
D
DRM  
V
MAX.  
MAX.  
MAX.  
MAX.  
TM  
TM  
V
Threshold voltage  
V
t0  
R
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
5
DRM  
V
= V  
RRM  
DRM  
4
RRM  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
0.8  
Unit  
R
Junction to case (DC)  
Junction to ambient (DC)  
°C/W  
°C/W  
th(j-c)  
th(j-a)  
R
60  
PRODUCT SELECTOR  
Voltage  
Part Number  
Sensitivity  
35 mA  
Package  
TO-220AB  
600 V  
800 V  
1000 V  
TYNx40  
X
X
X
ORDERING INFORMATION  
TYN 6 40 (RG)  
STANDARD  
PACKING MODE  
Blank: Bulk  
RG:Tube  
SCR  
SERIES  
VOLTAGE:  
6: 600V  
CURRENT: 40A  
8: 800V  
10: 1000V  
OTHER INFORMATION  
Part Number  
Marking  
Weight  
Base Quantity  
Packing mode  
TYNx40  
TYNx40  
TYNx40  
2.3 g  
2.3 g  
250  
50  
Bulk  
Tube  
TYNx40RG  
Note: x = voltage  
2/4  
TYNx40 Series  
Fig. 1: Maximum average power dissipation  
Fig. 2: Average and DC on-state current versus  
versus average on-state current.  
case temperature.  
IT(av)(A)  
P(W)  
50  
40  
α = 180°  
35  
D.C.  
40  
30  
25  
20  
15  
30  
α = 180°  
20  
10  
360°  
10  
5
IT(av)(A)  
Tcase(°C)  
α
0
0
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100  
125  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature.  
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C]  
K = [Zth/Rth]  
2.5  
1.00  
2.0  
Zth(j-c)  
IGT  
1.5  
0.10  
0.01  
Zth(j-a)  
IH & IL  
1.0  
0.5  
tp(s)  
1E+0  
Tj(°C)  
0.0  
-40 -20  
0
20  
40  
60  
80 100 120 140  
1E-3  
1E-2  
1E-1  
1E+1  
1E+2 5E+2  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
Fig. 6: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
tp < 10 ms, and corresponding value of I²t.  
a
2
2
ITSM(A),I t(A s)  
ITSM(A)  
5000  
1000  
500  
450  
Tj initial = 25°C  
400  
350  
300  
250  
200  
150  
100  
50  
tp = 10ms  
One cycle  
ITSM  
2
Non repetitive  
I t  
Tj initial = 25 °C  
dI/dt  
limitattion  
Repetitive  
Tcase = 95°C  
Number of cycles  
tp(ms)  
0
100  
1
10  
100  
1000  
0.01  
0.10  
1.00  
10.00  
3/4  
TYNx40 Series  
Fig. 7: On-state characteristics (maximum  
values).  
ITM(A)  
500  
Tj max.:  
Vto = 0.85V  
Rd = 10m  
100  
Tj = Tj max.  
10  
Tj = 25°C  
VTM(V)  
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
Millimeters  
B
C
REF.  
Inches  
Typ. Max. Min. Typ. Max.  
b2  
Min.  
L
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
F
3.75  
0.147  
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c2  
a1  
c1  
c2  
e
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
b1  
M
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
c1  
e
l2  
l3  
M
2.60  
0.102  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
4/4  
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