FYS-8011E/FX-XX
A
Model No.
Rev.
Model No. FYS-8011E/FX-XX
Absolute maximum ratings
(Ta=25
)
Value
Parameter
Symbol
Test Condition
Unit
Max
Min
5
—
—
—
Reverse Voltage
Forward Current
Power Dissipation
Pulse Current
Operating Temperature
Storage Temperature
VR
IF
Pd
Ipeak
Topr
Tstr
IR=30
—
—
—
V
30
mA
mW
mA
100
150
+85
+85
Duty=0.1mS,1KHz
—
—
-40
-40
Electrical-Optical Characteristics
(Ta=25
)
Color Code & Chip Characteristics:(Test Condition:IF=20mA)
Spectral
Line
halfwidth(∆
λ1/2)
Luminous
Intensity
(Iv)
Forward
Voltage(VF) Unit:V
Peak Wave
Length(λP)
Dice
Material
Emitting Color
Unit:mcd
Max
Typ
Standard brightness
GaP
700nm
660nm
650nm
625nm
610nm
590nm
570nm
430nm
460nm
2.50
2.50
2.50
2.50
2.50
2.50
2.50
4.40
3.80
3.80
3.80
3.80
1
H
S
D
E
A
Y
G
Red
90nm
20nm
20nm
35nm
35nm
35nm
10nm
2.00
1.80
1.90
1.90
1.90
1.90
1.90
3.40
2.80
2.80
2.80
2.80
AlGaAs/SH
AlGaAs/DH
GaAsP
GaAsP
GaAsP
15~20
26~38
14~20
13~18
13~18
14~18
Hi Red
Super Red
Orange
Amber
Yellow
Green
GaP
0.7~1(mw)
6~12(mw)
6~12(mw)
4~6(mw)
20~30
B
Blue
InGaN
60nm
470nm
520nm
InGaN
InGaN
PG Pure Green
White
36nm
CCT:9500K
X=0.29,Y=0.30
W
Ultra brightness
UHR Ultra Hi Red
UR Ultra Red
UE Ultra Orange
UA Ultra Amber
UY Ultra Yellow
UG Ultra Green
AlGaInP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
640nm
635nm
625nm
610nm
590nm
570nm
520nm
505nm
460nm
2.50
2.50
2.50
2.50
2.50
2.50
3.80
3.80
3.80
3.80
3.80
30~60
60~100
60~120
20nm
20nm
20nm
20nm
20nm
30nm
36nm
36nm
30nm
1.90
1.90
1.90
1.90
1.90
1.90
2.80
2.80
2.80
2.80
2.80
40~100~150
50~140~190
30~60~80
260~310
PG Ultra Pure Green InGaN
BG Ultra Bluish Green InGaN
260~310
80~90~120
80~90~120
180~200
UB Ultra Blue
InGaN
470nm
30nm
InGaN
X=0.29,Y=0.30
UW Ultra White
Segment-to-Segment Luminous Intensity ratio(Iv-M)
CCT:9500K
1.5:1
Note:
1.Luminous Intensity is based on the Foryard standards.
2.Pay attention about static for InGaN
4/5
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