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TYP2012

型号:

TYP2012

描述:

可控硅过电压保护[ SCR FOR OVERVOLTAGE PROTECTION ]

品牌:

STMICROELECTRONICS[ ST ]

页数:

5 页

PDF大小:

70 K

TYP 212 --->TYP 2012  
SCR FOR OVERVOLTAGE PROTECTION  
FEATURES  
HIGH SURGE CURRENT CAPABILITY  
.
.
HIGH dI/dt RATING  
.
HIGH STABILITY AND RELIABILITY  
DESCRIPTION  
The TYP 212 ---> 1012 Family uses high perform-  
ance glass passivated chips technology.  
These Silicon Controlled Rectifiers are designed for  
overvoltage protection in crowbar circuits applica-  
tion.  
G
A
K
TO220AB  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(180° conduction angle, single phase circuit)  
Tc = 110 °C  
Tc = 110 °C  
12  
A
T(RMS)  
I
Average on-state current  
(180° conduction angle, single phase circuit)  
8
A
A
T(AV)  
I
Non repetitive surge peak on-state current  
( Tj initial = 25°C )  
tp = 8.3 ms  
tp = 10 ms  
tp = 10 ms  
tp = 1 ms  
315  
300  
450  
750  
TSM  
2
I t  
2
2
A s  
I t value  
I
Non repetitive surge peak on-state current  
( Tj initial = 25°C )  
A
TM  
Exponential pulse wave form  
dI/dt  
Critical rate of rise of on-state current  
100  
A/µs  
Gate supply : I = 100 mA di /dt = 1 A/µs  
G
G
Tstg  
Tj  
Storage and operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
°C  
Tl  
Maximum lead temperature for soldering during 10 s at 4.5 mm  
from case  
260  
°C  
Symbol  
Parameter  
TYP  
Unit  
212  
512  
50  
1012  
2012  
V
V
Repetitive peak off-state voltage  
Tj = 125 °C  
25  
100  
200  
V
DRM  
RRM  
1/5  
April 1995  
TYP 212 ---> TYP 2012  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Rth (j-a)  
Junction to ambient  
Rth (j-c) DC Junction to case for DC  
1.3  
GATE CHARACTERISTICS (maximum values)  
P
= 1W  
P
= 10W (tp = 20 µs)  
I
= 4A (tp = 20 µs)  
V
RGM  
= 5 V.  
G (AV)  
GM  
FGM  
ELECTRICAL CHARACTERISTICS  
Symbol  
Test Conditions  
V =12V (DC) R =33Ω  
Value  
30  
Unit  
mA  
V
I
Tj=25°C  
Tj=25°C  
Tj= 125°C  
Tj=25°C  
MAX  
MAX  
MIN  
GT  
D
L
V
V =12V (DC) R =33Ω  
1.5  
0.2  
1
GT  
D
L
V
V =V  
R =3.3kΩ  
V
GD  
D
DRM  
DRM  
L
tgt  
V =V  
I
G
= 200mA  
TYP  
µs  
D
dI /dt = 1.5A/µs  
G
I
I
= 1.2 I  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj= 125°C  
Tj= 125°C  
TYP  
MAX  
MAX  
MAX  
60  
50  
mA  
mA  
V
L
G GT  
I
H
I = 500mA gate open  
T
V
ITM= 50A tp= 380µs  
1.5  
0.01  
2
TM  
I
I
V
V
Rated  
Rated  
mA  
DRM  
RRM  
DRM  
RRM  
dV/dt  
tq  
Linear slope up to V =67%V  
D
gate open  
MIN  
TYP  
200  
V/µs  
µs  
DRM  
V =67%V  
DRM  
dI /dt=30 A/µs  
I
= 50A V = 25V  
Tj= 125°C  
100  
D
TM  
TM  
R
dV /dt= 50V/µs  
D
2/5  
TYP 212 ---> TYP 2012  
Fig.1 : Maximum average power dissipation versus  
Fig.2 : Correlation between maximum average power  
average on-state current.  
dissipation and maximum allowable temperatures (T  
and T  
case  
contact.  
amb  
) for different thermal resistances heatsink +  
Fig.3  
:
Average on-state current versus case  
Fig.4 : Relative variation of thermal impedance versus  
temperature.  
pulse duration.  
Zth/Rth  
1
Zth(j-c)  
0.1  
Zth(j-a)  
tp(s)  
1E+2 5E+2  
0.01  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
Fig.5 : Relative variation of gate trigger current versus  
Fig.6 : Non repetitive surge peak on-state current  
junction temperature.  
versus number of cycles.  
3/5  
TYP 212 ---> TYP 2012  
Fig.7 : Non repetitive surge peak on-state current for a  
Fig.8 : On-state characteristics (maximum values).  
sinusoidal pulse with width  
corresponding value of I t.  
:
t
10 ms, and  
2
Fig.9 : Peak capacitor discharge current versus pulse  
Fig.10 : Allowable peak capacitor discharge current  
width.  
versus initial junction temparature.  
4/5  
TYP 212 ---> TYP 2012  
DIMENSIONS  
PACKAGE MECHANICAL DATA  
TO220AB Plastic  
REF.  
Millimeters  
Min. Max.  
Inches  
Min. Max.  
A
H
A
B
C
D
F
G
H
I
J
L
M
N
O
P
10.00 10.40 0.393 0.409  
15.20 15.90 0.598 0.625  
13.00 14.00 0.511 0.551  
G
J
I
D
6.20  
3.50  
2.65  
4.40  
3.75  
1.23  
0.49  
2.40  
4.80  
1.14  
0.61  
6.60 0.244 0.259  
4.20 0.137 0.165  
2.95 0.104 0.116  
4.60 0.173 0.181  
3.85 0.147 0.151  
1.32 0.048 0.051  
0.70 0.019 0.027  
2.72 0.094 0.107  
5.40 0.188 0.212  
1.70 0.044 0.066  
0.88 0.024 0.034  
B
F
L
O
C
P
M
= N=  
Cooling method : C  
Marking : type number  
Weight : 2.3 g  
Recommended torque value : 0.8 m.N.  
Maximum torque value : 1 m.N.  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability  
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may  
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.  
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all  
information previously supplied.  
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems  
without express written approval of SGS-THOMSON Microelectronics.  
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-  
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
5/5  
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TYP1012/F5 [ 12A, 100V, SCR, TO-220AB, TO-220, 3 PIN ] 5 页

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TYP212 可控硅过电压保护[ SCR FOR OVERVOLTAGE PROTECTION ] 5 页

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TYP512 可控硅过电压保护[ SCR FOR OVERVOLTAGE PROTECTION ] 5 页

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TYP512/F2 [ 12A, 50V, SCR, TO-220, 3 PIN ] 5 页

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TYP512/F3 [ 12A, 50V, SCR, TO-220, 2 PIN ] 5 页

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