Part Number: XZTNI53W-1
1.6 x 0.8 mm Infrared Emitting Diode
Features
Package Schematics
● Long life and robust package
● Standard Package: 2,000pcs/ Reel
● MSL (Moisture Sensitivity Level): 3
● Halogenꢀfree
● RoHS compliant
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.1(0.004") unless otherwise noted.
3. Specifications are subject to change without notice.
Absolute Maximum Ratings
(TA=25°C)
TNI
(GaAs)
Operating Characteristics
(TA=25°C)
TNI
(GaAs)
Unit
Unit
V
Forward Voltage (Typ.)
(IF=20mA)
Reverse Voltage
Forward Current
VR
5
V
VF
VF
IR
1.2
1.6
10
IF
50
mA
Forward Voltage (Max.)
(IF=20mA)
V
Forward Current (Peak)
1/100 Duty Cycle
10us Pulse Width
iFS
1200
mA
mW
°C
Reverse Current (Max.)
(VR=5V)
ꢁA
Power Dissipation
PD
TA
90
Wavelength of Peak
Emission CIE127ꢀ2007* (Typ.)
(IF=20mA)
λP
940*
nm
Operating Temperature
Storage Temperature
ꢀ40 ~ +85
ꢀ40 ~ +85
Tstg
Spectral Line Full Width
At HalfꢀMaximum (Typ.)
(IF=20mA)
△λ
50
90
nm
pF
A Relative Humidity between 40% and 60% is recommended in
ESDꢀprotected work areas to reduce static build up during assembly
process (Reference JEDEC/JESD625ꢀA and JEDEC/JꢀSTDꢀ033)
Capacitance (Typ.)
(VF=0V, f=1MHz)
C
Radiant Intensity
CIE127ꢀ2007*
(Po=mW/sr)
Wavelength
CIE127ꢀ2007*
Viewing
Angle
2θ 1/2
Part
Number
Emitting
Material
Lensꢀcolor
nm
λP
@20mA
min.
typ.
1.2
0.8*
2.8
1.8*
XZTNI53Wꢀ1
GaAs
Water Clear
940*
150°
*Radiant Intensity value and wavelength are in accordance with CIE127ꢀ2007 standards.
Dec 07,2020
XDSA8991 V5ꢀX Layout: Maggie L.
P. 1/4
