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IXXK300N60B3

型号：

IXXK300N60B3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

222 K

下载PDF手册
Advance Technical Information  
XPTTM 600V IGBTs  
GenX3TM  
IXXK300N60B3  
IXXX300N60B3  
VCES = 600V  
IC110 = 300A  
VCE(sat) ≤ 1.6V  
tfi(typ) = 95ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
TO-264 (IXXK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
TJ = 25°C to 175°C, RGE = 1MΩ  
Tab  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXXX)  
IC25  
ILRMS  
IC110  
TC= 25°C (Chip Capability)  
Leads Current Limit  
TC = 110°C (Chip Capability)  
550  
160  
300  
A
A
A
ICM  
TC = 25°C, 1ms  
1140  
A
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
500  
A
C
Tab  
E
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1Ω  
Clamped Inductive Load  
ICM = 600  
A
μs  
W
G = Gate  
C = Collector  
E
= Emitter  
(RBSOA)  
@VCE ≤ VCES  
Tab = Collector  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 10Ω, Non Repetitive  
PC  
TC = 25°C  
2300  
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
z
Optimized for 10-30kHz Switching  
Square RBSOA  
International Standard Packages  
Avalanche Rated  
Short Circuit Capability  
High Current Handling Capability  
z
z
z
z
z
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
z
5.5  
z
25 μA  
2.5 mA  
z
z
TJ = 150°C  
z
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
z
z
Lamp Ballasts  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
TJ = 150°C  
1.3  
1.4  
1.6  
V
V
© 2012 IXYS CORPORATION, All Rights Reserved  
DS100503(10/12)  
IXXK300N60B3  
IXXX300N60B3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
50  
S
Cies  
Coes  
Cres  
13.3  
757  
246  
nF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
Qge  
Qgc  
460  
137  
196  
nC  
nC  
nC  
IC = 300A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
50  
87  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
3.45  
190  
95  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
VCE = 400V, RG = 1Ω  
3
=
Note 2  
Eof  
2.86  
4.40 mJ  
f
td(on)  
tri  
50  
87  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 100A, VGE = 15V  
Eon  
td(off)  
tfi  
4.47  
230  
200  
3.70  
mJ  
ns  
VCE = 400V, RG = 1Ω  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.065 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXK300N60B3  
IXXX300N60B3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
12V  
11V  
VGE = 15V  
13V  
12V  
11V  
10V  
10V  
9V  
9V  
8V  
8V  
7V  
0
0
7V  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
300  
250  
200  
150  
100  
50  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
13V  
VGE = 15V  
12V  
11V  
10V  
I C = 300A  
I C = 200A  
9V  
I C = 100A  
8V  
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
TJ = 150ºC  
25ºC  
I C = 300A  
- 40ºC  
60  
200A  
40  
20  
100A  
11  
0
4
5
6
7
8
9
10  
11  
9
10  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXXK300N60B3  
IXXX300N60B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
120  
100  
80  
60  
40  
20  
0
16  
14  
12  
10  
8
TJ = - 40ºC, 25ºC, 150ºC  
VCE = 300V  
I C = 300A  
I G = 10mA  
6
4
2
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
700  
600  
500  
400  
300  
200  
100  
0
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 150ºC  
RG = 1  
Ω
dv / dt < 10V / ns  
C
res  
0
5
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
400  
500  
600  
VCE - Volts  
VCE - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Maximum Transient Thermal Impedance  
10,000  
0.1  
VCE(sat) Limit  
1,000  
100  
10  
25µs  
External Lead Current Limit  
100µs  
0.01  
1ms  
TJ = 175ºC  
10ms  
100ms  
1
TC = 25ºC  
DC  
Single Pulse  
0
0.001  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXK300N60B3  
IXXX300N60B3  
Fig. 14. Inductive Switching Energy Loss vs.  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
7
6
5
4
3
2
1
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
8
6
4
2
0
E
E
on - - - -  
VGE = 15V  
E
E
on - - - -  
off  
RG = 1  
off  
Ω ,  
TJ = 150ºC , VGE = 15V  
VCE = 400V  
I C = 100A  
VCE = 400V  
TJ = 150ºC  
TJ = 25ºC  
I C = 50A  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
380  
340  
300  
260  
220  
180  
140  
100  
800  
700  
600  
500  
400  
300  
200  
100  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
7
6
5
4
3
2
1
0
E
E
t f i  
t
d(off) - - - -  
on - - - -  
off  
RG = 1  
TJ = 150ºC, VGE = 15V  
VGE = 15V  
Ω ,  
VCE = 400V  
VCE = 400V  
I C = 100A  
I C = 50A  
I C = 100A  
I C = 50A  
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
300  
250  
200  
150  
100  
50  
360  
320  
280  
240  
200  
160  
tf i  
td(on)  
- - - -  
t f i  
td(off)  
- - - -  
RG = 1  
,
VGE = 15V  
Ω
RG = 1  
,
VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
TJ = 150ºC  
I C = 50A  
TJ = 25ºC  
I C = 100A  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXXK300N60B3  
IXXX300N60B3  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
120  
100  
80  
60  
40  
20  
0
56  
54  
52  
50  
48  
46  
44  
160  
140  
120  
100  
80  
120  
110  
100  
90  
tr i  
td(on) - - - -  
tr i  
td(on) - - - -  
RG = 1  
, VGE = 15V  
Ω
TJ = 150ºC, VGE = 15V  
VCE = 400V  
VCE = 400V  
I C = 100A  
80  
TJ = 25ºC  
60  
70  
I C = 50A  
TJ = 150ºC  
40  
60  
20  
50  
0
40  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
160  
140  
120  
100  
80  
53  
52  
51  
50  
49  
48  
47  
46  
45  
tr i  
td(on) - - - -  
, VGE = 15V  
RG = 1  
Ω
VCE = 400V  
I C = 100A  
60  
40  
I C = 50A  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXX_300N60B3(9D)10-10-12  
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