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IXXH60N65B4H1

型号：

IXXH60N65B4H1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

8 页

PDF大小：

232 K

下载PDF手册
XPTTM 650V IGBT  
VCES = 650V  
IC110 = 60A  
VCE(sat)  2.2V  
tfi(typ) = 43ns  
IXXH60N65B4H1  
GenX4TM w/ Sonic Diode  
Extreme Light Punch Through  
IGBT for 5-30 kHz Switching  
TO-247  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
G
C
Tab  
=
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
E = Emitter  
C
Collector  
IC25  
IC110  
IF110  
TC = 25°C (Chip Capability)  
TC = 110°C  
TC = 110°C  
145  
60  
47  
A
A
A
Tab = Collector  
ICM  
TC = 25°C, 1ms  
265  
A
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5  
ICM = 120  
A
Features  
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
Optimized for 5-30kHz Switching  
Square RBSOA  
Anti-Parallel Sonic Diode  
Short Circuit Capability  
(SCSOA)  
RG = 82, Non Repetitive  
PC  
TC = 25°C  
536  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
International Standard Package  
-55 ... +175  
Advantages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Weight  
Applications  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
4.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
25 A  
TJ = 150C  
TJ = 150C  
3 mA  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
1.8  
2.1  
2.2  
V
V
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100494D(9/16)  
IXXH60N65B4H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXXH) Outline  
Min.  
Typ.  
Max.  
D
A
A
B
0P 0K M D B M  
E
A2  
gfs  
IC = 60A, VCE = 10V, Note 1  
17  
28  
S
Q
S
D2  
R
Cies  
Coes  
Cres  
2590  
310  
40  
pF  
pF  
pF  
D1  
D
L
VCE = 25V, VGE = 0V, f = 1MHz  
0P1  
4
R1  
1
2
3
IXYS OPTION  
C
L1  
Qg(on)  
Qge  
86  
22  
35  
nC  
nC  
nC  
E1  
IC = 60A, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
A1  
b
c
b2  
td(on)  
tri  
Eon  
td(off)  
tfi  
19  
80  
ns  
ns  
b4  
1 - Gate  
2,4 - Collector  
3 - Emitter  
e
Inductive load, TJ = 25°C  
IC = 60A, VGE = 15V  
J
M C A M  
3.2  
107  
43  
mJ  
ns  
VCE = 400V, RG = 5  
ns  
Note 2  
Eof  
1.1  
mJ  
f
td(on)  
tri  
20  
74  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 60A, VGE = 15V  
Eon  
td(off)  
tfi  
4.2  
120  
88  
mJ  
ns  
VCE = 400V, RG = 5  
ns  
Note 2  
Eoff  
1.8  
mJ  
RthJC  
RthCS  
0.28 °C/W  
°C/W  
0.21  
Reverse Sonic Diode (FRD)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V, Note 1  
2.5  
V
V
TJ = 150°C  
1.5  
IRM  
trr  
TJ = 150°C  
TJ = 150°C  
25  
78  
A
ns  
IF = 30A, VGE = 0V,  
-diF/dt = 900A/μs, VR = 300V  
RthJC  
0.60 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXH60N65B4H1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
120  
100  
80  
60  
40  
20  
0
240  
200  
160  
120  
80  
V
= 15V  
GE  
12V  
11V  
V
= 15V  
GE  
14V  
13V  
14V  
13V  
12V  
11V  
10V  
9V  
10V  
9V  
8V  
7V  
40  
8V  
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
120  
100  
80  
60  
40  
20  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
13V  
12V  
V
= 15V  
14V  
GE  
V
= 15V  
GE  
I
= 120A  
C
11V  
10V  
9V  
I
= 60A  
C
8V  
7V  
I
= 30A  
75  
C
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
100  
125  
150  
175  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
7
6
5
4
3
2
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 25ºC  
T
= - 40ºC  
25ºC  
J
T
J
= 150ºC  
I
= 120A  
C
60A  
30A  
8
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
10  
11  
12  
VGE - Volts  
VGE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXXH60N65B4H1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
C = 60A  
IG = 10mA  
I
25ºC  
150ºC  
6
4
2
0
0
0
50  
100  
150  
200  
250  
300  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
140  
120  
100  
80  
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
60  
C
C
oes  
40  
T
J
= 150ºC  
R
G
= 5  
Ω
20  
res  
dv / dt < 10V / ns  
0
10  
100  
200  
300  
400  
500  
600  
700  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance (IGBT)  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH60N65B4H1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
9
8
7
6
5
4
3
2
1
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
E
E
E
R
E
off  
on  
off  
on  
T = 150ºC , V = 15V  
J
GE  
= 5  
V
= 15V  
Ω ,  
G
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 60A  
C
T = 150ºC  
J
I
= 30A  
C
T = 25ºC  
J
30  
40  
50  
60  
70  
80  
90  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
RG - Ohms  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
140  
120  
100  
80  
700  
600  
500  
400  
300  
200  
100  
0
E
E
off  
= 5  
on  
t f i  
td(off)  
R
VGE = 15V  
Ω ,  
G
T = 150ºC, V = 15V  
J
GE  
VCE = 400V  
V
= 400V  
CE  
IC = 60A  
I
= 60A  
C
60  
I
= 30A  
C
IC = 30A  
40  
20  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
t f i  
td(off)  
t f i  
td(off)  
R
G
= 5 , V = 15V  
Ω
R
G
= 5 , V = 15V  
GE  
Ω
GE  
V = 400V  
CE  
V
= 400V  
CE  
I
= 30A  
C
T = 150ºC  
J
60  
60  
I
= 60A  
C
T = 25ºC  
J
40  
40  
I
= 30A  
C
20  
20  
0
60  
0
60  
30  
40  
50  
60  
70  
80  
90  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXXH60N65B4H1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
160  
140  
120  
100  
80  
30  
200  
160  
120  
80  
100  
80  
60  
40  
20  
0
t r i  
td(on)  
t r i  
td(on)  
28  
26  
24  
22  
20  
18  
16  
14  
T = 150ºC, V = 15V  
J
GE  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 60A  
C
T = 150ºC  
J
T = 25ºC  
J
60  
I
= 30A  
C
40  
40  
20  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
30  
40  
50  
60  
70  
80  
90  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
120  
105  
90  
75  
60  
45  
30  
15  
0
24  
23  
22  
21  
20  
19  
18  
17  
16  
t r i  
td(on)  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
I
= 60A  
= 30A  
C
C
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH60N65B4H1  
Fig. 21. Forward Current vs. Forward Voltage  
Fig. 22. Reverse Recovery Charge QRR vs. -diF/dt  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
100  
80  
60  
40  
20  
0
T
= 150ºC  
= 300V  
VJ  
I
= 50A  
F
V
R
T
VJ  
= 25ºC  
150ºC  
30A  
10A  
0
0.5  
1
1.5  
2
2.5  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
VF  
-di /d  
t - A/µs  
F
- Volts  
t
Fig. 24. Recover Time tRR vs. -diF/d  
t
Fig. 23. Peak Reverse Current IRM vs. -diF/d  
140  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
TVJ = 150ºC  
VR = 300V  
TVJ = 150ºC  
VR = 300V  
IF = 50A  
30A  
10A  
I F = 50A  
60  
30A  
10A  
40  
20  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
-diF/dt - A/µs  
-di /d  
t - A/µs  
F
Fig. 26. Dynamic Parameters QRR, IRM vs.  
Virtual Junction Temperature TVJ  
t
Fig. 25. Recovery Energy EREC vs. -diF/d  
1.20  
500  
450  
400  
350  
300  
250  
200  
150  
100  
V
= 300V  
R
T
= 150ºC  
= 300V  
VJ  
I
F
= 50A  
I
=50A  
30A  
F
V
R
1.00  
0.80  
0.60  
0.40  
0.20  
-dI /dt = 900A/µs  
F
K
I
RM  
F
10A  
K
Q
RR  
F
0
20  
40  
60  
80  
100  
120  
140  
160  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
-diF  
d
TVJ - Degrees Centigrade  
/ t - A/µs  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXXH60N65B4H1  
Fig. 27. Maximum Transient Thermal Impedance (Diode)  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXX_60N65B4(E6-RZ43) 9-23-16  
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