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CYM26KNP72AV25-10BBC

型号：

CYM26KNP72AV25-10BBC

品牌：

CYPRESS[ CYPRESS ]

页数：

25 页

PDF大小：

234 K

下载PDF手册
PRELIMINARY  
CYM26KNP72AV25  
TM  
256K x 72 Pipelined MCM with NoBL Architecture  
with the advanced No Bus LatencyTM (NoBLTM) logic required  
to enable consecutive Read/Write operations with data being  
Features  
• NoBusLatency, no deadcyclesbetweenwriteandread  
cycles  
• Internally synchronized registered outputs eliminate  
the need to control OE  
• Single 2.5V –5% and +5% power supply VDD  
• Single WE (READ/WRITE) control pin  
• Positive clock-edge triggered, address, data, and con-  
trol signal registers for fully pipelined applications  
• Interleaved or linear 4-word burst capability  
• Individual byte write (BWSa – BWSh) control (may be  
tied LOW)  
• CEN pin to enable clock and suspend operations  
• Three chip enables for simple depth expansion  
• Available in 209 fine-pitch ball BGA package  
transferred on every clock cycle. This feature dramatically im-  
proves the throughput of data through the MCM, especially in  
systems that require frequent Write/Read transitions. The  
CYM26KNP72AV25 is pin compatible and functionally equiv-  
alent to ZBT devices.  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. All data outputs pass through  
output registers controlled by the rising edge of the clock. The  
clock input is qualified by the Clock Enable (CEN) signal,  
which, when deasserted, suspends operation and extends the  
previous clock cycle. Maximum access delay from the clock  
rise is 3.2 ns (200-MHz device).  
Write operations for the CYM26KNP72AV25 are controlled by  
the Byte Write Selects (BWSa–BWSh) and a Write Enable  
(WE) input. All writes are conducted with on-chip synchronous  
self-timed write circuitry. Three synchronous Chip Enable  
(CE1, CE2, CE3) and an asynchronous Output Enable (OE)  
provide for easy bank selection and output three-state control.  
In order to avoid bus contention, the output drivers are syn-  
chronously three-stated during the data portion of a write se-  
quence.  
Functional Description  
The CYM26KNP72AV25 is a 2.5V, 256K x 72 Synchronous-  
Pipelined Burst MCM. It is designed specifically to support un-  
limited true back-to-back Read/Write operations without the  
insertion of wait states. The CYM26KNP72AV25 is equipped  
Logic Block Diagram  
F/T  
CLK  
DQ  
[0:31]  
256K x 36  
TDO  
ADV/LD  
DP  
[a:d]  
A
TDI  
[0:17]  
BWS  
CEN  
CE  
CE  
CE  
[a:d]  
1
2
3
WE  
TDI  
DQ  
[32:63]  
OE  
Mode  
256K x 36  
DP  
[e:h]  
TCK  
TMS  
TDO  
TDO  
BWS  
[e:h]  
Common Signals for Both  
SRAM’s  
.
Selection Guide  
200 MHz  
3.2  
166 MHz  
3.5  
133 MHz  
4.2  
100 MHz  
5.0  
Maximum Access Time (ns)  
Maximum Operating Current (mA)  
Com’l  
950  
900  
640  
600  
Maximum CMOS Standby Current (mA) Com’l  
20  
20  
20  
20  
Shaded areas contain advance information.  
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation.  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05111 Rev. **  
Revised August 10, 2001  
PRELIMINARY  
CYM26KNP72AV25  
Pin Configuration  
209-Ball Grid Array  
1
2
3
4
5
6
7
8
9
10  
DQb  
11  
DQg  
DQg  
DQg  
A
B
C
D
E
F
DQg  
DQg  
CE  
CE  
ADV/LD  
WE  
DQb  
DQb  
3
2
A
A
A
A
A
BWS  
NC  
NC  
DQb  
DQb  
BWS  
BWS  
f
BWS  
b
c
g
DQg  
DQg  
DQPc  
DQc  
DQc  
NC  
NC  
BWS  
NC  
BWS  
CE  
BWS  
a
BWS  
e
DQb  
DQb  
DQPb  
DQf  
d
1
h
DQg  
V
NC  
OE  
V
NC  
V
SSQ  
DQb  
SSQ  
DQPg  
DQc  
V
V
V
V
V
V
DD  
DDQ  
DDQ  
DDQ  
SSQ  
DDQ  
DDQ  
DD  
DD  
DQPf  
DQf  
V
V
V
V
V
V
V
V
SSQ  
SS  
DD  
SSQ  
SS  
DD  
SS  
SSQ  
DDQ  
G
H
J
DQc  
DQc  
V
V
V
V
V
V
V
DDQ  
DDQ  
DQf  
DQf  
DQf  
DD  
V
V
V
V
V
V
SS  
V
DQc  
DQc  
NC  
V
SSQ  
SSQ  
SS  
SSQ  
DDQ  
SSQ  
SS  
DQf  
DQf  
NC  
DQc  
NC  
V
V
V
V
V
V
V
DDQ  
DD  
DD  
DDQ  
DDQ  
DQf  
NC  
DD  
K
L
CLK  
V
CEN  
F/T  
NC  
V
SS  
SS  
NC  
NC  
DQh  
DQh  
DQh  
V
V
V
V
DDQ  
DD  
SS  
DD  
SS  
DDQ  
DDQ  
DQa0  
DQa2  
DQa1  
DDQ  
M
N
P
R
T
V
V
V
V
V
V
V
V
DQh  
DQh  
DQh  
V
V
SSQ  
SSQ  
DDQ  
SSQ  
SS  
SSQ  
SSQ  
DQa3  
DQa5  
DQa7  
V
V
V
V
V
DDQ  
DQh  
DQh  
DQPd  
DQd  
DQd  
V
V
V
V
V
NC  
DD  
DD  
SS  
DDQ  
DDQ  
DQa4  
DQa6  
DQPa8  
DQe  
V
V
V
V
V
V
SS  
SSQ  
DDQ  
SSQ  
SS  
SSQ  
DDQ  
SSQ  
DQPh  
DQd  
DQd  
DQd  
DQd  
V
V
DDQ  
SSQ  
DD  
DD  
DDQ  
DD  
DQPe  
DQe  
DQe  
DQe  
DQe  
NC  
V
NC  
NC  
NC  
A
MODE  
A
U
V
W
NC  
NC  
A
A
NC  
NC  
A
DQe  
A
A1  
DQd  
DQd  
A
A
A
A
DQe  
DQe  
TDI  
TDO  
TCK  
A0  
A
TMS  
Document #: 38-05111 Rev. **  
Page 2 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Pin Definitions  
Name  
A0  
A1  
I/O Type  
Description  
Input-  
Synchronous  
Address Inputs used to select one of the 256K address locations. Sampled at the  
rising edge of the CLK.  
A
BWSa  
BWSb  
BWSc  
BWSd  
BWSe  
BWSf  
BWSg  
BWSh  
Input-  
Synchronous  
Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the  
SRAM. Sampled on the rising edge of CLK. BWSa controls DQa and DPa, BWSb  
controls DQb and DPb, BWSc controls DQc and DPc, BWSd controls DQd and DPd,  
BWSe controls DQe and DPe, BWSf controls DQf and DPf, BWSg controls DQg and  
DPg, BWSh controls DQh and DPh.  
WE  
Input-  
Synchronous  
Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active  
LOW. This signal must be asserted LOW to initiate a write sequence.  
ADV/LD  
Input-  
Synchronous  
Advance/Load Input used to advance the on-chip address counter or load a new  
address. When HIGH (and CEN is asserted LOW) the internal burst counter is ad-  
vanced. When LOW, a new address can be loaded into the device for an access. After  
being deselected, ADV/LD should be driven LOW in order to load a new address.  
CLK  
CE1  
CE2  
CE3  
OE  
Input-Clock  
Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified  
with CEN. CLK is only recognized if CEN is active LOW.  
Input-  
Synchronous  
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in con-  
junction with CE2 and CE3 to select/deselect the device.  
Input-  
Synchronous  
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in con-  
junction with CE1 and CE3 to select/deselect the device.  
Input-  
Synchronous  
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in con-  
junction with CE1 and CE2 to select/deselect the device.  
Input-  
Asynchronous  
Output Enable, active LOW. Combined with the synchronous logic block inside the  
device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to  
behaveas outputs. Whendeasserted HIGH, I/O pins arethree-stated, andactas input  
data pins. OE is masked during the data portion of a write sequence, during the first  
clock when emerging from a deselected state and when the device has been dese-  
lected.  
CEN  
Input-  
Synchronous  
Clock Enable Input, active LOW. When asserted LOW the clock signal is recognized  
by the SRAM. When deasserted HIGH the clock signal is masked. Since deasserting  
CEN does not deselect the device, CEN can be used to extend the previous cycle  
when required.  
DQa  
DQb  
DQc  
DQd  
DQe  
DQf  
I/O-  
Synchronous  
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is  
triggered by the rising edge of CLK. As outputs, they deliver the data contained in the  
memory location specified by A[18:0] during the previous clock rise of the read cycle.  
The direction of the pins is controlled by OE and the internal control logic. When OE  
is asserted LOW, the pins can behave as outputs. When HIGH, DQa–DQd are placed  
in a three-state condition. The outputs are automatically three-stated during the data  
portion of a write sequence, during the first clock when emerging from a deselected  
state, and when the device is deselected, regardless of the state of OE.  
DQg  
DQh  
DPa  
DPb  
DPc  
DPd  
DPe  
DPf  
I/O-  
Synchronous  
BidirectionalDataParity I/Olines. Functionally, thesesignals areidenticalto DQ[31:0].  
During write sequences, DPa is controlled by BWSa, DPb is controlled by BWSb, DPc  
is controlled by BWSc, DPd is controlled by BWSd, DPe is controlled by BWSe, DPf  
is controlled by BWSf, DPg is controlled by BWSg, and DPh is controlled by BWSh.  
DPg  
DPh  
F/T  
Input  
Strap pin  
Flowthrough Input: Used as a control pin to select flowthrough or pipelined operation.  
High for Pieplined. Connect to VDD for normal operation.  
Document #: 38-05111 Rev. **  
Page 3 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Pin Definitions (continued)  
Name  
I/O Type  
Description  
MODE  
Input  
Strap Pin  
Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved  
burstorder. PulledLOWselectsthelinearburstorder. MODEshouldnotchangestates  
during operation. When left floating MODE will default HIGH, to an interleaved burst  
order.  
TDO  
TDI  
JTAG serial  
output  
Synchronous  
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. (BGA  
Only)  
JTAG serial  
input  
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. (BGA Only)  
Synchronous  
TMS  
Test Mode Select  
Synchronous  
This pin controls the Test Access Port state machine. Sampled on the rising edge of  
TCK. (BGA Only)  
TCK  
VDD  
JTAG Clock  
JTAG Clock  
Power Supply  
Power supply inputs to the core of the device.  
Power supply for the I/O circuitry.  
VDDQ  
I/O Power  
Supply  
VSS  
VSSQ  
NC  
Ground  
Ground  
-
Ground for the device. Should be connected to ground of the system.  
Ground for the I/O circuitry. Should be connected to ground of the system.  
No connects.  
Document #: 38-05111 Rev. **  
Page 4 of 25  
PRELIMINARY  
CYM26KNP72AV25  
mode, a HIGH selects an interleaved burst sequence. Both  
burst counters use A0 and A1 in the burst sequence, and will  
wrap-around when incremented sufficiently. A HIGH input on  
ADV/LD will increment the internal burst counter regardless of  
the state of chip enables inputs or WE. WE is latched at the  
beginning of a burst cycle. Therefore, the type of access (Read  
or Write) is maintained throughout the burst sequence.  
Introduction  
Functional Overview  
The CYM26KNP72AV25 is a synchronous-pipelined Burst  
NoBL SRAM module designed specifically to eliminate wait  
states during Write/Read transitions. All synchronous inputs  
pass through input registers controlled by the rising edge of  
the clock. The clock signal is qualified with the Clock Enable  
input signal (CEN). If CEN is HIGH, the clock signal is not  
recognized and all internal states are maintained. All synchro-  
nous operations are qualified with CEN. All data outputs pass  
through output registers controlled by the rising edge of the  
clock. Maximum access delay from the clock rise (tCO) is  
4.2 ns (133-MHz device).  
Single Write Accesses  
Write access are initiated when the following conditions are  
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,  
and CE3 are ALL asserted active, and (3) the write signal WE  
is asserted LOW. The address presented to Ax is loaded into  
the Address Register. The write signals are latched into the  
Control Logic block.  
Accesses can be initiated by asserting all three Chip Enables  
(CE1, CE2, CE3) active at the rising edge of the clock. If Clock  
Enable (CEN) is active LOW and ADV/LD is asserted LOW,  
the address presented to the device will be latched. The ac-  
cess can either be a read or write operation, depending on the  
status of the Write Enable (WE). BWS[H:a] can be used to con-  
duct byte write operations.  
On the subsequent clock rise the data lines are automatically  
three-stated regardless of the state of the OE input signal. This  
allows the external logic to present the data on DQ and DQP  
(DQa-h/DPa-h for CYM26KNP72AV25). In addition, the ad-  
dress for the subsequent access (Read/Write/Deselect) is  
latched into the Address Register (provided the appropriate  
control signals are asserted).  
Write operations are qualified by the Write Enable (WE). All  
writes are simplified with on-chip synchronous self-timed write  
circuitry.  
On the next clock rise the data presented to DQ and DP (DQa-  
h/DPa-h for CYM26KNP72AV25) (or a subset for byte write  
operations, see Write Cycle Description table for details) in-  
puts is latched into the device and the write is complete.  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) simplify depth expansion.  
All operations (Reads, Writes, and Deselects) are pipelined.  
ADV/LD should be driven LOW once the device has been de-  
selected in order to load a new address for the next operation.  
The data written during the Write operation is controlled by  
BWS (BWSa-h for CYM26KNP72AV25)  
signals. The  
CYM26KNP72AV25 provides byte write capability that is de-  
scribed in the Write Cycle Description table. Asserting the  
Write Enable input (WE) with the selected Byte Write Select  
(BWS) input will selectively write to only the desired bytes.  
Bytes not selected during a byte write operation will remain  
unaltered. A Synchronous self-timed write mechanism has  
been provided to simplify the write operations. Byte write ca-  
pability has been included in order to greatly simplify  
Read/Modify/Write sequences, which can be reduced to sim-  
ple byte write operations.  
Single Read Accesses  
A read access is initiated when the following conditions are  
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,  
and CE3 are ALL asserted active, (3) the Write Enable input  
signal WE is deasserted HIGH, and (4) ADV/LD is asserted  
LOW. The address presented to the address inputs is latched  
into the Address Register and presented to the memory core  
and control logic. The control logic determines that a read ac-  
cess is in progress and allows the requested data to propagate  
to the input of the output register. At the rising edge of the next  
clock the requested data is allowed to propagate through the  
output register and onto the data bus within 3.8 ns (150-MHz  
device) provided OE is active LOW. After the first clock of the  
read access the output buffers are controlled by OE and the  
internal control logic. OE must be driven LOW in order for the  
device to drive out the requested data. During the second  
clock, a subsequent operation (Read/Write/Deselect) can be  
initiated. Deselecting the device is also pipelined. Therefore,  
when the SRAM is deselected at clock rise by one of the chip  
enable signals, its output will three-state following the next  
clock rise.  
Because the CYM26KNP72AV25 is a common I/O device,  
data should not be driven into the device while the outputs are  
active. The Output Enable (OE) can be deasserted HIGH be-  
fore presenting data to the DQ and DP (DQa-h/DPa-h for  
CYM26KNP72AV25 ) inputs. Doing so will three-state the out-  
put drivers. As a safety precaution, DQ and DP (DQa-h/DPa-h  
for CYM26KNP72AV25 are automatically three-stated during  
the data portion of a write cycle, regardless of the state of OE.  
Burst Write Accesses  
The CYM26KNP72AV25 has an on-chip burst counter that  
allows the user the ability to supply a single address and con-  
duct up to four WRITE operations without reasserting the ad-  
dress inputs. ADV/LD must be driven LOW in order to load the  
initial address, as described in the Single Write Access section  
above. When ADV/LD is driven HIGH on the subsequent clock  
rise, the chip enables (CE1, CE2, and CE3) and WE inputs are  
ignored and the burst counter is incremented. The correct  
BWS (BWSa-h for CYM26KNP72AV25 ) inputs must be driven  
in each cycle of the burst write in order to write the correct  
bytes of data.  
Burst Read Accesses  
The CYM26KNP72AV25 has an on-chip burst counter that  
allows the user to supply a single address and conduct up to  
four Reads without reasserting the address inputs. ADV/LD  
must be driven LOW in order to load a new address into the  
SRAM, as described in the Single Read Access section above.  
The sequence of the burst counter is determined by the MODE  
input signal. A LOW input on MODE selects a linear burst  
Document #: 38-05111 Rev. **  
Page 5 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Cycle Description Truth Table[1, 2, 3, 4, 5, 6]  
Address  
ADV/  
Operation  
Used  
CE  
CEN  
LD/  
WE  
BWSx  
CLK  
L-H  
Comments  
Deselected  
External  
1
0
L
X
X
I/Os three-state following next  
recognized clock.  
Suspend  
-
X
1
X
X
X
L-H  
Clock ignored, all operations  
suspended.  
Begin Read  
Begin Write  
External  
External  
0
0
0
0
0
0
1
0
X
L-H  
L-H  
Address latched.  
Valid  
Address latched, data presented  
two valid clocks later.  
Burst Read  
Operation  
Internal  
X
0
1
X
X
L-H  
Burst Read operation. Previous ac-  
cess was a Read operation. Ad-  
dresses incremented internally in  
conjunction with the state of Mode.  
Burst Write  
Operation  
Internal  
X
0
1
X
Valid  
L-H  
Burst Write operation. Previous ac-  
cess was a Write operation. Ad-  
dresses incremented internally in  
conjunction with the state of  
MODE. Bytes written are deter-  
mined by BWS[H:a]  
.
Interleaved Burst Sequence  
Linear Burst Sequence  
First  
Address  
Second  
Address  
Third  
Address  
Fourth  
Address  
First  
Address  
Second  
Address  
Third  
Address  
Fourth  
Address  
A[1:0]  
A[1:0]  
A[1:0]  
A[1:0]  
A[1:0]  
A[1:0]  
A[1:0]  
A[1:0]  
00  
01  
10  
11  
01  
00  
11  
10  
10  
11  
00  
01  
11  
10  
01  
00  
00  
01  
10  
11  
01  
10  
11  
00  
10  
11  
00  
01  
11  
00  
01  
10  
Notes:  
1. X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW, CE stands for ALL Chip Enables active. BWS = 0 signifies at least one Byte Write Select is active, BWS  
=
x
x
Valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.  
2. Write is defined by WE and BWS . See Write Cycle Description table for details.  
x
3. The DQ and DP pins are controlled by the current cycle and the OE signal.  
4. CEN = 1 inserts wait states.  
5. Device will power-up deselected and the I/Os in a three-state condition, regardless of OE.  
6. OE assumed LOW.  
Document #: 38-05111 Rev. **  
Page 6 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Write Cycle Description[1]  
Function  
(CYM26KNP72AV25)  
WE  
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
BWSh  
X
1
BWSg  
X
1
BWSf  
X
1
BWSe  
X
1
BWSd  
X
1
BWSc  
X
1
BWSb  
X
1
BWSa  
X
1
Read  
Write - No bytes written  
Write Byte 0 - (DQa andDPa)  
Write Byte 1 - (DQb andDPb)  
Write Bytes 1, 0  
1
1
1
1
1
1
1
0
1
1
1
1
1
1
0
1
1
1
1
1
1
1
0
0
Write Byte 2 - (DQc and DPc)  
Write Bytes 2, 0  
1
1
1
1
1
0
1
1
1
1
1
1
1
0
1
0
Write Bytes 2, 1  
1
1
1
1
1
0
0
1
Write Bytes 2, 1, 0  
Write Byte 3 - (DQd andDPd)  
Write Bytes 3, 0  
1
1
1
1
1
0
0
0
1
1
1
1
0
1
1
1
1
1
1
1
0
1
1
0
Write Bytes 3, 1  
1
1
1
1
0
1
0
1
Write Bytes 3, 1, 0  
Write Bytes 3, 2  
1
1
1
1
0
1
0
0
1
1
1
1
0
0
1
1
Write Bytes 3, 2, 0  
Write Bytes 3, 2, 1  
Write Bytes 3,2,1,0  
Write Byte 4 (DQe and DPe)  
Write Bytes 4,0  
1
1
1
1
0
0
1
0
1
1
1
1
0
0
0
1
1
1
1
1
0
0
0
0
1
1
1
0
1
1
1
1
1
1
1
0
1
1
1
0
Write Bytes 4,1  
1
1
1
0
1
1
0
1
Write Bytes 4,1,0  
1
1
1
0
1
1
0
0
Write Bytes 4,2  
1
1
1
0
1
0
1
1
Write Bytes 4,2,0  
1
1
1
0
1
0
1
0
Write Bytes 4,2,1  
1
1
1
0
1
0
0
1
Write Bytes 4,2,1,0  
Write Bytes 4,3  
1
1
1
0
1
0
0
0
1
1
1
0
0
1
1
1
Write Bytes 4,3,0  
1
1
1
0
0
1
1
0
Write Bytes 4,3,1  
1
1
1
0
0
1
0
1
Write Bytes 4,3,1,0  
Write Bytes 4,3,2  
1
1
1
0
0
1
0
0
1
1
1
0
0
0
1
1
Write Bytes 4,3,2,0  
Write Bytes 4,3,2,1  
Write Bytes 4,3,2,1,0  
Write Bytes 5-DQf and DPf  
Write Bytes 5,0  
1
1
1
0
0
0
1
0
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
0
1
1
1
1
1
1
1
0
1
1
1
1
0
Document #: 38-05111 Rev. **  
Page 7 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Write Cycle Description[1] (continued)  
Function  
(CYM26KNP72AV25)  
WE  
0
BWSh  
BWSg  
BWSf  
BWSe  
BWSd  
BWSc  
BWSb  
BWSa  
Write Bytes 5,1  
1
1
1
1
““  
0
0
1
1
1
1
““  
0
0
0
0
0
0
““  
0
0
1
1
1
1
““  
0
0
1
1
1
1
““  
0
0
1
1
0
0
““  
0
0
0
0
1
1
““  
0
0
1
0
1
0
““  
1
0
Write Bytes 5,1,0  
0
Write Bytes 5,2  
0
Write Bytes 5,2,0  
0
*Write Bytes””  
““  
0
Write Bytes 7,6,5,4,3,2,1  
Write All Bytes  
0
*Not all Combos are specified  
Document #: 38-05111 Rev. **  
Page 8 of 25  
PRELIMINARY  
CYM26KNP72AV25  
the rising edge of TCK. Data is output on the TDO pin on the  
falling edge of TCK.  
IEEE 1149.1 Serial Boundary Scan (JTAG)  
The CYM26KNP72AV25 incorporates a serial boundary scan  
Test Access Port (TAP). This port operates in accordance with  
IEEE Standard 1149.1-1900, but does not have the set of func-  
tions required for full 1149.1 compliance. These functions from  
the IEEE specification are excluded because their inclusion  
places an added delay in the critical speed path of the SRAM.  
Note that the TAP controller functions in a manner that does  
not conflict with the operation of other devices using 1149.1  
fully compliant TAPs. The TAP operates using JEDEC stan-  
dard 3.3V I/O logic levels.  
Instruction Register  
Three-bit instructions can be serially loaded into the instruction  
register. This register is loaded when it is placed between the  
TDI and TDO pins as shown in the TAP Controller Block Dia-  
gram. Upon power-up, the instruction register is loaded with  
the IDCODE instruction. It is also loaded with the IDCODE  
instruction if the controller is placed in a reset state as de-  
scribed in the previous section.  
When the TAP controller is in the CaptureIR state, the two  
least significant bits are loaded with a binary “01” pattern to  
allow for fault isolation of the board level serial test path.  
Disabling the JTAG Feature  
It is possible to operate the SRAM without using the JTAG  
feature. To disable the TAP controller, TCK must be tied LOW  
(VSS) to prevent clocking of the device. TDI and TMS are in-  
ternally pulled up and may be unconnected. They may alter-  
nately be connected to VDD through a pull-up resistor. TDO  
should be left unconnected. Upon power-up, the device will  
come up in a reset state which will not interfere with the oper-  
ation of the device.  
Bypass Register  
To save time when serially shifting data through registers, it is  
sometimes advantageous to skip certain states. The bypass  
register is a single-bit register that can be placed between TDI  
and TDO pins. This allows data to be shifted through the  
SRAM with minimal delay. The bypass register is set LOW  
(VSS) when the BYPASS instruction is executed.  
Test Access Port (TAP) - Test Clock  
Boundary Scan Register  
The test clock is used only with the TAP controller. All inputs  
are captured on the rising edge of TCK. All outputs are driven  
from the falling edge of TCK.  
The boundary scan register is connected to all the input and  
output pins on the SRAM. Several no connect (NC) pins are  
also included in the scan register to reserve pins for higher  
density devices. The x36 configuration has a 69-bit-long reg-  
ister.  
Test Mode Select  
The TMS input is used to give commands to the TAP controller  
and is sampled on the rising edge of TCK. It is allowable to  
leave this pin unconnected if the TAP is not used. The pin is  
pulled up internally, resulting in a logic HIGH level.  
The boundary scan register is loaded with the contents of the  
RAM Input and Output ring when the TAP controller is in the  
Capture-DR state and is then placed between the TDI and  
TDO pins when the controller is moved to the Shift-DR state.  
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instruc-  
tions can be used to capture the contents of the Input and  
Output ring.  
Test Data-In (TDI)  
The TDI pin is used to serially input information into the regis-  
ters and can be connected to the input of any of the registers.  
The register between TDI and TDO is chosen by the instruc-  
tion that is loaded into the TAP instruction register. For infor-  
mation on loading the instruction register, see the TAP Con-  
troller State Diagram. TDI is internally pulled up and can be  
unconnected if the TAP is unused in an application. TDI is  
connected to the Most Significant Bit (MSB) on any register.  
The Boundary Scan Order tables show the order in which the  
bits are connected. Each bit corresponds to one of the bumps  
on the SRAM package. The MSB of the register is connected  
to TDI, and the LSB is connected to TDO.  
Identification (ID) Register  
The ID register is loaded with a vendor-specific, 32-bit code  
during the Capture-DR state when the IDCODE command is  
loaded in the instruction register. The IDCODE is hardwired  
into the SRAM and can be shifted out when the TAP controller  
is in the Shift-DR state. The ID register has a vendor code and  
other information described in the Identification Register Defi-  
nitions table.  
Test Data Out (TDO)  
The TDO output pin is used to serially clock data-out from the  
registers. The output is active depending upon the current  
state of the TAP state machine (see TAP Controller State Dia-  
gram). The output changes on the falling edge of TCK. TDO is  
connected to the Least Significant Bit (LSB) of any register.  
Performing a TAP Reset  
TAP Instruction Set  
A Reset is performed by forcing TMS HIGH (VDD) for five rising  
edges of TCK. This RESET does not affect the operation of  
the SRAM and may be performed while the SRAM is operat-  
ing. At power-up, the TAP is reset internally to ensure that TDO  
comes up in a High-Z state.  
Eight different instructions are possible with the three-bit in-  
struction register. All combinations are listed in the Instruction  
Code table. Three of these instructions are listed as  
RESERVED and should not be used. The other five instruc-  
tions are described in detail below.  
The TAP controller used in this SRAM is not fully compliant to  
the 1149.1 convention because some of the mandatory 1149.1  
instructions are not fully implemented. The TAP controller can-  
not be used to load address, data, or control signals into the  
SRAM and cannot preload the Input or Output buffers. The  
SRAM does not implement the 1149.1 commands EXTEST or  
TAP Registers  
Registers are connected between the TDI and TDO pins and  
allow data to be scanned into and out of the SRAM test circuit-  
ry. Only one register can be selected at a time through the  
instruction registers. Data is serially loaded into the TDI pin on  
Document #: 38-05111 Rev. **  
Page 9 of 25  
PRELIMINARY  
CYM26KNP72AV25  
INTEST or the PRELOAD portion of SAMPLE / PRELOAD;  
rather it performs a capture of the Inputs and Output ring when  
these instructions are executed.  
When the SAMPLE / PRELOAD instructions are loaded into  
the instruction register and the TAP controller is in the Capture-  
DR state, a snapshot of data on the inputs and output pins is  
captured in the boundary scan register.  
Instructions are loaded into the TAP controller during the Shift-  
IR state when the instruction register is placed between TDI  
and TDO. During this state, instructions are shifted through the  
instruction register through the TDI and TDO pins. To execute  
the instruction once it is shifted in, the TAP controller needs to  
be moved into the Update-IR state.  
The user must be aware that the TAP controller clock can only  
operate at a frequency up to 10 MHz, while the SRAM clock  
operates more than an order of magnitude faster. Because  
there is a large difference in the clock frequencies, it is possi-  
ble that during the Capture-DR state, an input or output will  
undergo a transition. The TAP may then try to capture a signal  
while in transition (metastable state). This will not harm the  
device, but there is no guarantee as to the value that will be  
captured. Repeatable results may not be possible.  
EXTEST  
EXTEST is a mandatory 1149.1 instruction which is to be ex-  
ecuted whenever the instruction register is loaded with all 0s.  
EXTEST is not implemented in the TAP controller, and there-  
fore this device is not compliant to the 1149.1 standard.  
To guarantee that the boundary scan register will capture the  
correct value of a signal, the SRAM signal must be stabilized  
long enough to meet the TAP controller’s capture set-up plus  
hold times (tCS and tCH). The SRAM clock input might not be  
captured correctly if there is no way in a design to stop (or  
slow) the clock during a SAMPLE / PRELOAD instruction. If  
this is an issue, it is still possible to capture all other signals  
and simply ignore the value of the CK and CK# captured in the  
boundary scan register.  
The TAP controller does recognize an all-0 instruction. When  
an EXTEST instruction is loaded into the instruction register,  
the SRAM responds as if a SAMPLE / PRELOAD instruction  
has been loaded. There is one difference between the two  
instructions. Unlike the SAMPLE / PRELOAD instruction,  
EXTEST places the SRAM outputs in a High-Z state.  
IDCODE  
Once the data is captured, it is possible to shift out the data by  
putting the TAP into the Shift-DR state. This places the bound-  
ary scan register between the TDI and TDO pins.  
The IDCODE instruction causes a vendor-specific, 32-bit code  
to be loaded into the instruction register. It also places the  
instruction register between the TDI and TDO pins and allows  
the IDCODE to be shifted out of the device when the TAP  
controller enters the Shift-DR state. The IDCODE instruction  
is loaded into the instruction register upon power-up or when-  
ever the TAP controller is given a test logic reset state.  
Note that since the PRELOAD part of the command is not  
implemented, putting the TAP into the Update to the Update-  
DR state while performing a SAMPLE / PRELOAD instruction  
will have the same effect as the Pause-DR command.  
Bypass  
SAMPLE Z  
When the BYPASS instruction is loaded in the instruction reg-  
ister and the TAP is placed in a Shift-DR state, the bypass  
register is placed between the TDI and TDO pins. The advan-  
tage of the BYPASS instruction is that it shortens the boundary  
scan path when multiple devices are connected together on a  
board.  
The SAMPLE Z instruction causes the boundary scan register  
to be connected between the TDI and TDO pins when the TAP  
controller is in a Shift-DR state. It also places all SRAM outputs  
into a High-Z state.  
SAMPLE / PRELOAD  
SAMPLE / PRELOAD is a 1149.1 mandatory instruction. The  
PRELOAD portion of this instruction is not implemented, so  
the TAP controller is not fully 1149.1 compliant.  
Reserved  
These instructions are not implemented but are reserved for  
future use. Do not use these instructions.  
Document #: 38-05111 Rev. **  
Page 10 of 25  
PRELIMINARY  
CYM26KNP72AV25  
TAP Controller State Diagram  
TEST-LOGIC  
1
RESET  
1
1
1
TEST-LOGIC/  
IDLE  
SELECT  
DR-SCAN  
SELECT  
IR-SCAN  
0
0
0
1
1
CAPTURE-DR  
CAPTURE-DR  
0
0
SHIFT-DR  
0
SHIFT-IR  
0
1
1
EXIT1-DR  
0
1
EXIT1-IR  
0
1
0
0
PAUSE-DR  
1
PAUSE-IR  
1
0
0
EXIT2-DR  
1
EXIT2-IR  
1
UPDATE-DR  
UPDATE-IR  
1
1
0
0
Note: The 0/1 next to each state represents the value at TMS at the rising edge of TCK.  
Document #: 38-05111 Rev. **  
Page 11 of 25  
PRELIMINARY  
CYM26KNP72AV25  
TAP Controller Block Diagram  
0
Bypass Register  
Selection  
Circuitry  
Selection  
Circuitry  
TDO  
2
1
0
TDI  
Instruction Register  
29  
Identification Register  
31 30  
.
.
2
1
1
0
0
.
.
.
.
.
2
Boundary Scan Register  
TCK  
TMS  
TAP Controller  
TAP Electrical Characteristics Over the Operating Range[7, 8]  
Parameter  
VOH1  
VOH2  
VOL1  
VOL2  
VIH  
Description  
Test Conditions  
Min.  
1.7  
Max.  
Unit  
V
Output HIGH Voltage  
Output HIGH Voltage  
Output LOW Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage  
Input Load Current  
IOH = −2.0 mA  
IOH = −100 µA  
IOL = 2.0 mA  
IOL = 100 µA  
2.1  
V
0.7  
0.2  
V
V
1.7  
−0.3  
−5  
V
DD + 0.3  
V
VIL  
0.7  
V
IX  
GND ≤ VI ≤ VDDQ  
5
µA  
Notes:  
7. All Voltage referenced to Ground  
8. Overshoot: VIH(AC) < VDD+1.5V for t < tTCYC/2. Undershoot: VIL(AC) < 0.5V for t < tTCYC/2. Power-up: VIH < 2.6V and VDD < 2.4V and VDDQ< 1.4V for t < 200 ms.  
Document #: 38-05111 Rev. **  
Page 12 of 25  
PRELIMINARY  
CYM26KNP72AV25  
TAP AC Switching Characteristics Over the Operating Range[9, 10]  
Parameter  
tTCYC  
tTF  
Description  
Min.  
Max  
Unit  
ns  
TCK Clock Cycle Time  
TCK Clock Frequency  
TCK Clock HIGH  
100  
10  
MHz  
ns  
tTH  
40  
40  
tTL  
TCK Clock LOW  
ns  
Set-up Times  
tTMSS  
tTDIS  
TMS Set-up to TCK Clock Rise  
TDI Set-up to TCK Clock Rise  
Capture Set-up to TCK Rise  
10  
10  
10  
ns  
ns  
ns  
tCS  
Hold Times  
tTMSH  
tTDIH  
TMS Hold after TCK Clock Rise  
TDI Hold after Clock Rise  
10  
10  
10  
ns  
ns  
ns  
tCH  
Capture Hold after Clock Rise  
Output Times  
tTDOV  
TCK Clock LOW to TDO Valid  
TCK Clock LOW to TDO Invalid  
20  
ns  
ns  
tTDOX  
0
Notes:  
9. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.  
10. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.  
Document #: 38-05111 Rev. **  
Page 13 of 25  
PRELIMINARY  
CYM26KNP72AV25  
TAP Timing and Test Conditions  
1.25V  
50Ω  
ALL INPUT PULSES  
TDO  
2.5V  
Z =50Ω  
0
1.25V  
C =20 pF  
L
0V  
GND  
(a)  
tTL  
tTH  
Test Clock  
TCK  
tTCYC  
tTMSS  
tTMSH  
Test Mode Select  
TMS  
tTDIS  
tTDIH  
Test Data-In  
TDI  
Test Data-Out  
TDO  
tTDOX  
tTDOV  
Document #: 38-05111 Rev. **  
Page 14 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Identification Register Definitions  
Instruction Field  
Value  
Description  
Revision Number  
TBD  
Version number.  
(31:29)  
Cypress Device ID  
(28:12)  
TBD  
TBD  
TBD  
Defines the type of SRAM.  
Cypress JEDEC ID  
(11:1)  
Allows unique identification of SRAM vendor.  
Indicate the presence of an ID register.  
ID Register Presence  
(0)  
Scan Register sizes  
Register Name  
Instruction  
Bit Size  
3
Bypass  
1
ID  
32  
TBD  
Boundary Scan  
Identification Codes  
Instruction  
Code  
Description  
EXTEST  
000  
Captures the Input/Output ring contents. Places the boundary scan register  
between the TDI and TDO. Forces all SRAM outputs to High-Z state. This  
instruction is not 1149.1 compliant.  
IDCODE  
001  
010  
Loads the ID register with the vendor ID code and places the register be-  
tween TDI and TDO. This operation does not affect SRAM operation.  
SAMPLE Z  
Captures the Input/Output contents. Places the boundary scan register be-  
tween TDI and TDO. Forces all SRAM output drivers to a High-Z state.  
RESERVED  
011  
100  
Do Not Use: This instruction is reserved for future use.  
SAMPLE/PRELOAD  
Captures the Input/Output ring contents. Places the boundary scan register  
between TDI and TDO. Does not affect the SRAM operation. This instruction  
does not implement 1149.1 preload function and is therefore not 1149.1  
compliant.  
RESERVED  
RESERVED  
BYPASS  
101  
110  
111  
Do Not Use: This instruction is reserved for future use.  
Do Not Use: This instruction is reserved for future use.  
Places the bypass register between TDI and TDO. This operation does not  
affect SRAM operation.  
Document #: 38-05111 Rev. **  
Page 15 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Boundary Scan Order (To Be Determined)  
Document #: 38-05111 Rev. **  
Page 16 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Current into Outputs (LOW) ........................................ 20 mA  
Maximum Ratings  
Static Discharge Voltage .......................................... >2001V  
(per MIL-STD-883, Method 3015)  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Latch-Up Current.................................................... >200 mA  
+
Storage Temperature .................................–65°C to +150°C  
Ambient Temperature with  
Power Applied.............................................–55°C to +125°C  
Operating Range  
Ambient  
Supply Voltage on VDD Relative to GND ....... –0.5V to +2.6V  
Range  
Com’l  
Temperature[11]  
VDD/VDDQ  
DC Voltage Applied to Outputs  
in High Z State[12] ............................... –0.5V to VDDQ + 0.5V  
0°C to +70°C  
2.5V ± 5%  
DC Input Voltage[12]............................ –0.5V to VDDQ + 0.5V  
Electrical Characteristics Over the Operating Range  
Parameter  
VDD  
Description  
Test Conditions  
Min.  
2.375  
2.375  
2.0  
Max.  
2.625  
2.625  
Unit  
V
Power Supply Voltage  
I/O Supply Voltage  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage  
Input Load Current  
Input Current of MODE  
VDDQ  
VOH  
VOL  
VIH  
VIL  
V
VDD = Min., IOH = –1.0 mA  
V
VDD = Min., IOL = 1.0 mA  
0.2  
V
1.7 VDD + 0.3V  
V
–0.3  
–10  
–60  
–5  
0.7  
10  
60  
5
V
IX  
GND < VI < VDDQ  
µA  
µA  
µA  
IOZ  
IDD  
Output Leakage  
Current  
GND < VI < VDDQ, Output Disabled  
VDD Operating Supply VDD = MAX., IOUT = 0 mA,  
f = fMAX = 1/tCYC  
5-ns cycle, 200 MHz  
6-ns cycle, 166 MHz  
7.5-ns cycle, 133MHz  
10-ns cycle, 100 MHz  
5-ns cycle, 200 MHz  
6-ns cycle, 166 MHz  
7.5-ns cycle, 133 MHz  
10-ns cycle, 100 MHz  
950  
900  
640  
600  
180  
160  
140  
130  
20  
mA  
mA  
mA  
mA  
mA  
ISB1  
Automatic CE  
Power-Down  
Current—TTL Inputs  
Max. VDD, Device Deselected,  
IN ≥ VIH or VIN ≤ VIL  
f = fMAX = 1/tCYC  
V
ISB2  
Automatic CE  
Power-Down  
Current—CMOS Inputs f = 0  
Max. VDD, DeviceDeselected, VIN All speed grades  
< 0.3V or VIN > VDDQ – 0.3V,  
mA  
mA  
ISB3  
Automatic CE  
Power-Down  
Current—CMOS Inputs f = fMAX = 1/tCYC  
Max. VDD, Device Deselected, or 5-ns cycle, 200 MHz  
90  
80  
70  
60  
50  
VIN < 0.3V or VIN > VDDQ – 0.3V  
6-ns cycle, 166 MHz  
7.5-ns cycle, 133 MHz  
10-ns cycle, 100MHz  
All Speeds  
mA  
mA  
mA  
ISB4  
Automatic CS  
Power-Down  
Max. VDD, Device Deselected,  
VIN > VIH or VIN < VIL, f = 0  
Current—TTL Inputs  
Notes:  
11. TA is the case temperature.  
12. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.  
13. The load used for VOH and VOL testing is shown in figure (b) of the AC Test Conditions.  
Document #: 38-05111 Rev. **  
Page 17 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Capacitance[15]  
Parameter  
Description  
Input Capacitance  
Test Conditions  
Max.  
Unit  
pF  
CIN  
TA = 25°C, f = 1 MHz,  
VDD = VDDQ = 3.3V  
4
4
6
CCLK  
CI/O  
Clock Input Capacitance  
pF  
Input/Output Capacitance  
pF  
AC Test Loads and Waveforms  
R=317Ω  
3.3V  
[14]  
OUTPUT  
ALL INPUT PULSES  
90%  
OUTPUT  
V
CC  
90%  
10%  
Z =50Ω  
0
R =50Ω  
10%  
L
5 pF  
GND  
R=351Ω  
< 1V/ns  
< 1V/ns  
V = 1.5V  
L
INCLUDING  
JIG AND  
SCOPE  
(c)  
(a)  
(b)  
Thermal Resistance[15]  
Description  
Test Conditions  
Symbol  
BGATyp.  
Units  
Thermal Resistance  
(Junction to Ambient)  
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer  
printed circuit board  
QJA  
xx  
°C/W  
Thermal Resistance  
(Junction to Case)  
QJC  
xx  
°C/W  
Notes:  
14. Input waveform should have a slew rate of > 1 V/ns.  
15. Tested initially and after any design or process change that may affect these parameters.  
Document #: 38-05111 Rev. **  
Page 18 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Switching Characteristics Over the Operating Range[16]  
-200  
Max.  
-166  
Max.  
-133  
Max.  
-100  
Max.  
Parameter  
Clock  
tCYC  
Description  
Min.  
Min.  
Min.  
Min.  
Unit  
Clock Cycle Time  
5
6
7.5  
10.0  
ns  
MHz  
ns  
FMAX  
tCH  
Maximum Operating Frequency  
Clock HIGH  
200  
166  
133  
100  
1.4  
1.4  
1.7  
1.7  
2.0  
2.0  
4.0  
4.0  
tCL  
Clock LOW  
ns  
Output Times  
tCO  
Data Output Valid After CLK Rise  
OE LOW to Output Valid[15, 17, 19]  
Data Output Hold After CLK Rise  
Clock to High-Z[15, 16, 17, 18, 19]  
Clock to Low-Z[15, 16, 17, 18, 19]  
OE HIGH to Output High-Z[16, 17, 19]  
OE LOW to Output Low-Z[16, 17, 19]  
3.2  
3.2  
3.5  
3.5  
4.2  
4.2  
5.0  
5.0  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tEOV  
tDOH  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
tCHZ  
3.2  
3.0  
3.5  
3.3  
3.5  
4.0  
3.5  
4.8  
tCLZ  
tEOHZ  
tEOLZ  
Set-Up Times  
tAS  
0
0
0
0
Address Set-Up Before CLK Rise  
Data Input Set-Up Before CLK Rise  
CEN Set-Up Before CLK Rise  
WE, BWSx Set-Up Before CLK Rise  
ADV/LD Set-Up Before CLK Rise  
Chip Select Set-Up  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
ns  
ns  
ns  
ns  
ns  
ns  
tDS  
tCENS  
tWES  
tALS  
tCES  
Hold Times  
tAH  
Address Hold After CLK Rise  
Data Input Hold After CLK Rise  
CEN Hold After CLK Rise  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
ns  
ns  
ns  
ns  
ns  
ns  
tDH  
tCENH  
tWEH  
WE, BWx Hold After CLK Rise  
ADV/LD Hold after CLK Rise  
Chip Select Hold After CLK Rise  
tALH  
tCEH  
Shaded areas contain advance information.  
Notes:  
16. Unless otherwise noted, test conditions assume signal transition time of 2.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0 to 2.5V, and output  
loading of the specified IOL/IOH and load capacitance. Shown in (a), (b) and (c) of AC Test Loads.  
17. tCHZ, tCLZ, tOEV, tEOLZ, and tEOHZ are specified with AC test conditions shown in part (a) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.  
18. At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data  
bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve  
High-Z prior to Low-Z under the same system conditions.  
19. This parameter is sampled and not 100% tested.  
Document #: 38-05111 Rev. **  
Page 19 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Switching Waveforms  
READ/WRITE/DESELECT Sequence  
CLK  
CEN  
tCENH  
tCENS  
tCL  
tCH  
tCYC  
tAH  
tAS  
CEN HIGH blocks  
all synchronous inputs  
WA2  
WA5  
RA1  
RA3  
RA4  
RA6  
ADDRESS  
RA7  
WE &  
BWSx  
tWS  
tWH  
tCEH  
tCES  
CE  
tDH  
tDS  
tCHZ  
tCHZ  
tDOH  
tCLZ  
tDOH  
Q1  
Out  
D2  
In  
Data  
In/Out  
Q4  
Out  
D5  
In  
Q3  
Out  
Q6  
Out  
Q7  
Out  
Device  
originally  
tCO  
deselected  
The combination of WE & BWSx (x = a, b, c, d, e, f, g, h) define a write cycle  
(see Write Cycle Description table) CE is the combination of CE1, CE2, and CE3. All chip enables need to be active  
in order to select the device. Any chip enable can deselect the device. RAx stands for Read Address X, WAx  
Write Address X, Dx stands for Data-in for location X, Qx stands for Data-out for location X. ADV/LD held LOW.  
OE held LOW.  
= UNDEFINED  
Document #: 38-05111 Rev. **  
Page 20 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Switching Waveforms (continued)  
Burst Sequences  
CLK  
tCYC  
tALH  
tALS  
ADV/LD  
tCL  
tCH  
tAH  
tAS  
RA1  
WA2  
ADDRESS  
WE  
RA3  
tWS  
tWH  
tWS  
tWH  
BWSx  
tCES  
tCEH  
CE  
tCLZ  
tCHZ  
tDH  
tDOH  
tCLZ  
Q3  
Out  
Data  
In/Out  
Q1  
Q1+2  
Out  
Q1+3  
Out  
D2  
In  
D2+2  
In  
D2+3  
In  
Q1+1  
Out  
D2+1  
In  
Out  
Device  
originally  
deselected  
tCO  
tCO  
tDS  
The combination of WE & BWSx(x = a, b c, d, e, f, g, h) define a write cycle (see Write Cycle Description table).  
CE is the combination of CE1, CE2, and CE3. All chip enables need to be active in order to select  
the device. Any chip enable can deselect the device. RAx stands for Read Address X, WA stands for  
Write Address X, Dx stands for Data-in for location X, Qx stands for Data-out for location X. CEN held  
LOW. During burst writes, byte writes can be conducted by asserting the appropriate BWSx input signals.  
Burst order determined by the state of the MODE input. CEN held LOW. OE held LOW.  
= UNDEFINED  
Document #: 38-05111 Rev. **  
Page 21 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Switching Waveforms (continued)  
OE Timing  
OE  
tEOV  
tEOHZ  
Three-State  
I/Os  
tEOLZ  
Ordering Information  
Speed  
(MHz)  
Package  
Name  
Operating  
Range  
Ordering Code  
Package Type  
200  
CYM26KNP72AV25-20BBC  
CYM26KNP72AV25-16BBC  
CYM26KNP72AV25-13BBC  
CYM26KNP72AV25-10BBC  
BB209  
BB209  
BB209  
BB209  
209-Lead FBGA (14 x 22 x 2.2mm)  
209-Lead FBGA (14 x 22 x 2.2mm)  
209-Lead FBGA (14 x 22 x 2.2mm)  
209-Lead FBGA (14 x 22 x 2.2mm)  
Commercial  
Commercial  
Commercial  
Commercial  
166  
133  
100  
Document #: 38-05111 Rev. **  
Page 22 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Package Drawing:  
209-Ball FBGA (14 x 22 x 2.20 mm) BB209  
Document #: 38-05111 Rev. **  
Page 23 of 25  
PRELIMINARY  
CYM26KNP72AV25  
Part Numbering Scheme  
CY  
M
Depth  
Architecture Width Revision Voltage  
Speed  
Package Temperature  
C - Commercial  
BB - 209FBGA  
Frequency(100-200Mhz)  
Core Voltage (V25 = 2.5V)  
Module Revision Level  
Bus Width(72 - 72Bits)  
Architecture (NP - NoBL Pipelined)  
Module Depth(26K = 256K)  
Module  
Cypress  
Document #: 38-05111 Rev. **  
Page 24 of 25  
© Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize  
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.  
PRELIMINARY  
CYM26KNP72AV25  
Document Title: CYM26KNP72AV25 256K x 72 Pipelined MCM with NoBL™ Architecture  
Document Number: 38-05111  
ORIG. OF  
REV.  
ECN NO.  
ISSUE DATE  
CHANGE  
DESCRIPTION OF CHANGE  
New Data Sheet  
**  
107703  
08/13/01  
MEG  
Document #: 38-05111 Rev. **  
Page 25 of 25  
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