N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4206AV
ISSUE 3 - APRIL 1998
FEATURES
*
*
*
*
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60 Volt VDS
RDS(on)= 1Ω
Repetitive avalanche rating
No transient protection required
Characterised for 5V logic drive
D
G
S
APPLICATIONS
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Automotive relay drivers
Stepper motor driver
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
ID
VALUE
60
UNIT
V
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
600
8
mA
A
IDM
Gate-Source Voltage
VGS
Ptot
V
± 20
700
600
Power Dissipation at Tamb=25°C
mW
mA
Continuous Body Diode Current at Tamb
=25°C
ISD
Avalanche Current – Repetitive
IAR
600
15
mA
mJ
°C
Avalanche Energy – Repetitive
EAR
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BVDSS
Gate-Source Threshold Voltage VGS(th)
60
V
ID=1mA, VGS=0V
1.3
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
IDSS
100
nA
V
GS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
10
100
VDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
µA
µA
On-State Drain Current(1)
ID(on)
3
A
VDS=25V, VGS=10V
VGS=10V,ID=1.5A
VGS=5V,ID=.0.5A
Static Drain-Source On-State RDS(on)
Resistance (1)
1
1.5
Ω
Ω
Forward Transconductance(1)(2) gfs
300
mS
pF
VDS=25V,ID=1.5A
Input Capacitance (2)
Ciss
100
60
Common Source Output
Capacitance (2)
Coss
pF
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
20
8
pF
ns
ns
ns
ns
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
12
12
15
V
DD ≈25V, ID=1.5A,VGEN=10V
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
