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IXXH50N60B3D1

型号：

IXXH50N60B3D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

239 K

下载PDF手册
XPTTM 600V IGBT  
GenX3TM w/ Diode  
IXXH50N60B3D1  
VCES = 600V  
IC110 = 50A  
VCE(sat)  1.80V  
tfi(typ) = 135ns  
Extreme Light Punch Through  
IGBT for 5-30kHz Switching  
TO-247  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
TJ = 25°C to 175°C, RGE = 1M  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC110  
IF110  
TC = 25°C( Chip Capability)  
TC = 110°C  
TC = 110°C  
120  
50  
30  
A
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
200  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
A
200  
mJ  
A
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5  
ICM = 100  
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
Optimized for 5-30kHz Switching  
Square RBSOA  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
Anti-Parallel Ultra Fast Diode  
Avalanche Capability  
(SCSOA)  
RG = 22, Non Repetitive  
PC  
TC = 25°C  
600  
W
Short Circuit Capability  
International Standard Package  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Advantages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
High Power Density  
175°C Rated  
Extremely Rugged  
Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Power Inverters  
UPS  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
600  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Motor Drives  
SMPS  
6.0  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
25 A  
3 mA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.55  
1.80  
1.80  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100302B(8/13)  
IXXH50N60B3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXXH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 36A, VCE = 10V, Note 1  
12  
19  
S
Cies  
Coes  
Cres  
2230  
195  
44  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
70  
16  
29  
nC  
nC  
nC  
IC = 36A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
27  
40  
ns  
ns  
mJ  
ns  
ns  
1 - Gate  
2,4 - Collector  
3 - Emitter  
Inductive load, TJ = 25°C  
IC = 36A, VGE = 15V  
0.67  
100  
135  
0.74  
150  
VCE = 360V, RG = 5  
Note 2  
Eof  
1.20 mJ  
f
td(on)  
tri  
30  
45  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 36A, VGE = 15V  
Eon  
td(off)  
tfi  
1.40  
130  
190  
1.20  
mJ  
ns  
VCE = 360V, RG = 5  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.21  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ = 100°C  
4
A
ns  
ns  
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
100  
25  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
RthJC  
0.9 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXH50N60B3D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
70  
60  
50  
40  
30  
20  
10  
0
14V  
13V  
12V  
11V  
14V  
13V  
12V  
10V  
9V  
60  
11V  
40  
10V  
9V  
20  
8V  
7V  
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
15  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
14V  
70  
VGE = 15V  
13V  
60  
50  
40  
30  
20  
10  
0
I C = 72A  
12V  
11V  
10V  
I C = 36A  
9V  
8V  
I C = 18A  
7V  
6V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 72A  
36A  
18A  
TJ = 150ºC  
25ºC  
- 40ºC  
4
5
6
7
8
9
10  
11  
12  
13  
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXH50N60B3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
32  
28  
24  
20  
16  
12  
8
TJ = - 40ºC, 25ºC, 150ºC  
VCE = 300V  
C = 36A  
I G = 10mA  
I
6
4
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
10  
20  
30  
40  
50  
60  
70  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
res  
TJ = 150ºC  
RG = 5  
Ω
C
dv / dt < 10V / ns  
10  
100  
200  
500  
300400600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
aasss  
1,000  
100  
10  
0.4  
VCE(sat) Limit  
0.1  
25µs  
100µs  
1
1ms  
TJ = 175ºC  
TC = 25ºC  
10ms  
Single Pulse  
DC  
0
0.01  
0.00001  
1
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH50N60B3D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
6
5
4
3
2
1
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
5
E
E
on - - - -  
E
E
on - - - -  
off  
off  
TJ = 150ºC , VGE = 15V  
CE = 360V  
TJ = 150ºC  
RG = 5  
VGE = 15V  
Ω  
4
3
2
1
0
VCE = 360V  
V
I C = 72A  
TJ = 25ºC  
I C = 36A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
IC - Amperes  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
2.2  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
240  
350  
300  
250  
200  
150  
100  
50  
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
220  
200  
180  
160  
140  
120  
100  
TJ = 150ºC, GE = 15V  
V
RG = 5 VGE = 15V  
Ω  
CE = 360V  
V
VCE = 360V  
I C = 72A  
I C = 36A  
I C = 72A  
I C = 36A  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
240  
220  
200  
180  
160  
140  
120  
100  
80  
150  
140  
130  
120  
110  
100  
90  
300  
270  
240  
210  
180  
150  
120  
90  
220  
tf i  
td(off)  
- - - -  
t f i  
td(off)  
- - - -  
200  
180  
160  
140  
120  
100  
80  
RG = 5  
, VGE = 15V  
Ω  
RG = 5  
,
VGE = 15V  
Ω  
TJ = 150ºC  
VCE = 360V  
VCE = 360V  
I C = 36A  
TJ = 25ºC  
80  
I C = 72A  
70  
60  
60  
60  
60  
30  
40  
25  
50  
75  
100  
125  
150  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
TJ - Degrees Centigrade  
IC - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXH50N60B3D1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
240  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
44  
t r i  
t
d(on) - - - -  
t r i  
td(on)  
- - - -  
41  
38  
35  
32  
29  
26  
23  
20  
T
J
= 150ºC, V = 15V  
GE  
R
G
= 5 , V = 15V  
Ω  
GE  
V
= 360V  
CE  
V
= 360V  
CE  
I
= 36A  
C
T
J
= 150ºC  
I
= 72A  
C
60  
40  
T
J
= 25ºC  
40  
20  
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
44  
41  
38  
35  
32  
29  
26  
23  
20  
t r i  
t
d(on) - - - -  
R
G
= 5 , V = 15V  
Ω  
GE  
V
= 360V  
CE  
I
I
= 72A  
C
60  
= 36A  
C
40  
20  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXX_50N60B3D1(5D) 8-13-13-A  
IXXH50N60B3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ = 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
IF= 60A  
IF= 30A  
IF= 15A  
600  
400  
200  
0
TVJ =150°C  
TVJ =100°C  
TVJ = 25°C  
0
A/s  
1000  
0
1
2
3 V  
VF  
100  
1000  
0
200  
400  
600  
A/s  
-diF/dt  
-diF/dt  
Fig. 24. Peak Reverse Current IRM  
Versus -diF/dt  
Fig. 23. Reverse Recovery Charge Qr  
Versus -diF/dt  
Fig. 22. Forward Current IF Versus VF  
2.0  
90  
20  
1.00  
s  
TVJ = 100°C  
TVJ = 100°C  
IF = 30A  
VR = 300V  
V
ns  
VFR  
15  
tfr  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
IF = 60A  
IF = 30A  
80  
VFR  
IF = 15A  
1.0  
10  
5
IRM  
70  
Qr  
0.5  
0.0  
60  
0
A/s  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/s  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 26. Recovery Time trr Versus  
-diF/dt  
Fig. 27. Peak Forward Voltage VFR  
and tfr Versus diF/dt  
Fig. 25. Dynamic Parameters Qr, IRM  
Versus TVJ  
1
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 28. Transient Thermal Resistance Junction to Case  
© 2013 IXYS CORPORATION, All Rights Reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXXA50N60B3 [ Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-263AA, TO-263AA, 3 PIN ] 6 页

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