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DXT2222ATC

型号:

DXT2222ATC

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

6 页

PDF大小:

291 K

DXT2222A  
40V NPN SURFACE MOUNT TRANSISTOR IN SOT89  
Features  
Mechanical Data  
BVCEO > 40V  
Case: SOT89  
IC = 600mA High Collector Current  
Case Material: Molded Plastic, “Green” Molding Compound;  
UL Flammability Rating 94V-0  
Complementary PNP Type: DXT2907A  
Ideal for Medium Power Switching or Amplification Applications  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
Weight: 0.072 grams (Approximate)  
SOT89  
C
E
C
B
C
B
E
Top View  
Pin-Out  
Top View  
Device Symbol  
Ordering Information (Note 4)  
Product  
DXT2222A-13  
DXT2222ATC  
Compliance  
AEC-Q101  
AEC-Q101  
Marking  
K1P  
K1P  
Reel size (inches)  
Tape Width (mm)  
Quantity per Reel  
2,500  
13  
13  
12  
12  
4,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"  
and Lead-Free.  
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
(Top View)  
= Manufacturer’s Code Marking  
K1P = Product Type Marking Code:  
YWW = Date Code Marking  
YWW  
Y = Last Digit of Year ex: 5 = 2015  
WW = Week Code 01 to 53  
K1P  
1 of 6  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DXT2222A  
Document number: DS31156 Rev. 5 - 2  
DXT2222A  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
75  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
40  
V
6
V
800  
600  
mA  
mA  
Continuous Collector Current  
IC  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
0.75  
Unit  
(Note 5)  
(Note 6)  
(Note 5)  
(Note 6)  
Power Dissipation  
W
1.2  
166  
Thermal Resistance, Junction to Ambient Air  
Operating and Storage Temperature Range  
°C/W  
°C  
R  
JA  
104  
-55 to +150  
TJ, TSTG  
ESD Ratings (Note 7)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4,000  
400  
Unit  
V
JEDEC Class  
3A  
C
V
Notes:  
5. For a device mounted with the exposed collector pad on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB;  
device is measured under still air conditions whilst operating in a steady-state.  
6. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper.  
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 6  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DXT2222A  
Document number: DS31156 Rev. 5 - 2  
DXT2222A  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 8)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Conditions  
75  
40  
V
V
V
BVCBO  
BVCEO  
BVEBO  
IC = 10µA  
IC = 10mA  
IE = 10µA  
6.0  
nA  
A  
nA  
VCB = 60V  
Collector Cutoff Current  
10  
  
ICBO  
VCB = 60V, TA = +150°C  
VCE = 60V, VEB(OFF) = 3.0V  
VEB = 3.0V  
Collector Cutoff Current  
Emitter Cutoff Current  
10  
10  
20  
ICEX  
IEBO  
IBL  
  
nA  
nA  
Base Cutoff Current  
VCE = 60V, VEB(OFF) = 3.0V  
ON CHARACTERISTICS (Note 8)  
IC = 100µA, VCE = 10V  
IC = 1.0mA, VCE = 10V  
IC = 10mA, VCE = 10V  
  
35  
50  
75  
DC Current Gain  
100  
40  
35  
300  
  
hFE  
 IC = 150mA, VCE = 10V  
IC = 500mA, VCE = 10V  
IC = 10mA, VCE = 10V, TA = -55°C  
IC = 150mA, VCE = 1.0V  
50  
0.6  
0.3  
1.0  
IC = 150mA, IB = 15mA  
IC = 500mA, IB = 50mA  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
VCE(SAT)  
VBE(SAT)  
1.2  
2.0  
IC = 150mA, IB = 15mA  
IC = 500mA, IB = 50mA  
V
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
8
pF  
  
300  
Cobo  
Cibo  
fT  
VCB = 10V, f = 1.0MHz  
Input Capacitance  
25  
pF  
VEB = 0.5V, f = 1.0MHz  
Current Gain-Bandwidth Product  
MHz  
VCE = 20V, IC = 20mA, f = 100MHz  
VCE = 10V, IC = 150µA,  
dB  
Noise Figure  
NF  
4.0  
RS = 1.0kΩ, f = 1.0kHz  
SWITCHING CHARACTERISTICS  
Delay Time  
10  
25  
ns  
  
  
  
  
td  
tr  
VCC = 30V, IC = 150mA,  
VEB(OFF) = 0.5V, IB1 = 15mA  
Rise Time  
ns  
ns  
ns  
Storage Time  
225  
60  
ts  
tf  
VCC = 30V, IC = 150mA,  
IB1 = IB2 = 15mA  
Fall Time  
Note:  
8. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%.  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
0.8  
500  
V
= 10V  
CE  
0.7  
I
= 10mA  
T
= 150°C  
B
A
400  
0.6  
0.5  
I
= 8mA  
B
I
= 6mA  
B
T
= 85°C  
= 25°C  
300  
200  
A
I
= 4mA  
0.4  
0.3  
B
T
A
I
= 2mA  
= 1mA  
B
0.2  
I
B
T
= -55°C  
A
100  
0
0.1  
0.0  
0
1
2
3
4
5
1
10  
IC, COLLECTOR CURRENT (mA)  
Figure 2 Typical DC Current Gain vs. Collector Current  
100  
1,000  
VCE, COLLECTOR EMITTER VOLTAGE (V)  
Figure 1 Typical Collector Current  
vs. Collector Emitter Voltage  
3 of 6  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DXT2222A  
Document number: DS31156 Rev. 5 - 2  
DXT2222A  
0.6  
0.4  
1.2  
1
V
= 5V  
T
= 150°C  
CE  
A
I
/I = 10  
C
B
0.8  
0.6  
T
= -55°C  
A
T
= 25°C  
A
0.2  
0.4  
0.2  
0
T
= 85°C  
A
T
= 85°C  
A
T
= 150°C  
A
T
= 25°C  
A
T
= -55°C  
A
0
0.01  
0.1  
1
10  
100  
1,000  
0.1  
1
10  
100  
1,000  
IC, COLLECTOR CURRENT (mA)  
IC, COLLECTOR CURRENT (mA)  
Figure 4 Typical Base Emitter Turn-On Voltage  
vs. Collector Current  
Figure 3 Typical Collector Emitter Saturation Voltage  
vs. Collector Current  
30  
1.2  
I /I = 10  
C
B
f = 1MHz  
25  
20  
15  
10  
1
0.8  
0.6  
T
= -55°C  
A
T
T
= 25°C  
= 85°C  
A
A
C
ibo  
0.4  
0.2  
0
T
= 150°C  
A
5
0
C
obo  
0.1  
1
10  
100  
1,000  
0.1  
1
10  
100  
IC, COLLECTOR CURRENT (mA)  
VR, REVERSE VOLTAGE (V)  
Figure 5 Typical Base Emitter Saturation Voltage  
vs. Collector Current  
Figure 6 Typical Capacitance Characteristics  
500  
450  
400  
350  
300  
250  
200  
150  
100  
V
= 20V  
CE  
50  
0
f = 100MHz  
0
20  
40  
60  
80  
100  
IC, COLLECTOR CURRENT (mA)  
Figure 7 Typical Gain-Bandwidth Product  
vs. Collector Current  
4 of 6  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DXT2222A  
Document number: DS31156 Rev. 5 - 2  
DXT2222A  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.  
SOT89  
D1  
c
SOT89  
Dim Min Max  
Typ  
1.50  
0.56  
0.48  
0.38  
4.50  
H
A
B
1.401.60  
0.50 0.62  
E
B1 0.42 0.54  
c
D
0.35 0.43  
4.40 4.60  
B1  
L
B
D1 1.62 1.83 1.733  
D2 1.61 1.81  
2.40 2.60  
E2 2.05 2.35  
1.71  
2.50  
2.20  
1.50  
4.10  
2.78  
1.05  
e
E
D2  
e
-
-
8
°
(
4X)  
H
3.95 4.25  
H1 2.63 2.93  
H1  
E2  
L
0.90 1.20  
0.327  
0.20  
A
L1  
z
L1  
All Dimensions in mm  
D
z
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
SOT89  
X2  
Value  
Dimensions  
(in mm)  
1.500  
0.244  
0.580  
0.760  
1.933  
1.730  
3.030  
1.500  
0.770  
4.530  
C
G
X
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
Y3  
Y1  
Y4  
X
G
Y
Y2  
C
X1  
5 of 6  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DXT2222A  
Document number: DS31156 Rev. 5 - 2  
DXT2222A  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
www.diodes.com  
6 of 6  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DXT2222A  
Document number: DS31156 Rev. 5 - 2  
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