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IXXK110N65B4H1

型号：

IXXK110N65B4H1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

254 K

下载PDF手册
XPTTM 650V GenX4TM IXXK110N65B4H1  
VCES = 650V  
IC110 = 110A  
VCE(sat)  2.10V  
tfi(typ) = 43ns  
w/ Sonic Diode  
IXXX110N65B4H1  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
TO-264 (IXXK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
Tab  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXXX)  
IC25  
TC = 25°C (Chip Capability)  
Terminal Current Limit  
TC = 110°C  
250  
160  
110  
78  
A
A
A
A
ILRMS  
IC110  
IF110  
TC = 110°C  
G
ICM  
TC = 25°C, 1ms  
570  
A
C
Tab  
E
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2  
ICM = 220  
A
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
(SCSOA)  
RG = 82, Non Repetitive  
PC  
TC = 25°C  
880  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for 10-30kHz Switching  
Square RBSOA  
-55 ... +175  
Short Circuit Capability  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Anti-Parallel Sonic Diode  
High Current Handling Capability  
International Standard Packages  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
4.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
25 A  
mA  
100 nA  
TJ = 150C  
3
IGES  
VCE = 0V, VGE = 20V  
VCE(sat)  
IC = 110A, VGE = 15V, Note 1  
TJ = 150C  
1.72  
2.05  
2.10  
V
V
High Frequency Power Inverters  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100502C(8/16 )  
IXXK110N65B4H1  
IXXX110N65B4H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
52  
S
Cies  
Coes  
Cres  
5500  
470  
80  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
183  
32  
nC  
nC  
nC  
IC = 110A, VGE = 15V, VCE = 0.5 • VCES  
83  
PINS:  
- Gate  
2,4 - Collector  
td(on)  
tri  
Eon  
td(off)  
tfi  
26  
40  
ns  
ns  
mJ  
ns  
ns  
1
Inductive load, TJ = 25°C  
3
- Emitter  
IC = 55A, VGE = 15V  
2.20  
146  
43  
VCE = 400V, RG = 2  
Note 2  
Eof  
1.05  
1.70 mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
25  
40  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 55A, VGE = 15V  
3.00  
140  
110  
2.16  
mJ  
ns  
VCE = 400V, RG = 2  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Reverse Sonic Diode (FRD)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 100A, VGE = 0V, Note 1  
1.7  
1.8  
2.3  
V
V
TJ = 150C  
TJ = 150C  
IRM  
trr  
95  
A
PINS:  
1 - Gate  
2 - Collector  
3 - Emitter  
IF = 100A, VGE = 0V,  
-diF/dt = 1500A/sVR = 300V  
100  
ns  
RthJC  
0.38 C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXXK110N65B4H1  
IXXX110N65B4H1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
V
= 15V  
GE  
GE  
200  
160  
120  
80  
13V  
12V  
11V  
14V  
13V  
12V  
10V  
9V  
11V  
10V  
9V  
8V  
7V  
40  
8V  
7V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
12V  
11V  
200  
160  
120  
80  
V
= 15V  
14V  
13V  
GE  
I
= 220A  
C
10V  
9V  
I
= 110A  
C
40  
8V  
7V  
I
= 55A  
75  
C
0
-50  
-25  
0
25  
50  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
350  
300  
250  
200  
150  
100  
50  
T
= 25ºC  
J
T
= - 40ºC  
25ºC  
J
T
J
= 150ºC  
I
= 220A  
C
110A  
55A  
0
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXXK110N65B4H1  
IXXX110N65B4H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
IC = 110A  
I
G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
50  
100  
150  
200  
250  
300  
350  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
240  
200  
160  
120  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
C
T
J
= 150ºC  
res  
40  
R
G
= 2  
Ω
= 1 MHz  
5
f
dv / dt < 10V / ns  
10  
0
3040 200
0
10  
15  
20  
25  
35  
100  
300  
400  
500  
600  
700  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient thermal Impedance (IGBT)  
aaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXK110N65B4H1  
IXXX110N65B4H1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
6
5
4
3
2
1
0
12  
10  
8
7
6
5
4
3
2
1
0
14  
12  
10  
8
E
R
E
E
E
off  
on  
off  
on  
= 2  
V
= 15V  
Ω ,  
G
GE  
T
J
= 150ºC , V = 15V  
GE  
V
= 400V  
I = 110A  
C
CE  
V
= 400V  
CE  
T
J
= 150ºC  
6
6
T
J
= 25ºC  
4
4
I
= 55A  
12  
C
2
2
0
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100 105 110  
2
4
6
8
10  
14  
16  
IC - Amperes  
RG - Ohms  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
6
5
4
3
2
1
0
12  
10  
8
180  
160  
140  
120  
100  
80  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
E
R
E
t f i  
td(off)  
off  
on  
= 2  
VGE = 15V  
Ω ,  
G
T = 150ºC, V = 15V  
J GE  
VCE = 400V  
V
= 400V  
CE  
IC = 110A  
I
= 110A  
C
6
I
= 55A  
C
60  
4
40  
2
IC = 55A  
20  
0
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
160  
140  
120  
100  
80  
240  
220  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
220  
t f i  
td(off)  
t f i  
td(off)  
R
G
= 2 , V = 15V  
Ω
200  
180  
160  
140  
120  
100  
GE  
R
G
= 2 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T
= 150ºC  
= 25ºC  
J
I
= 55A, 110A  
C
60  
60  
40  
T
J
40  
20  
0
20  
25  
50  
75  
100  
125  
150  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100 105 110  
IC - Amperes  
TJ - Degrees Centigrade  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXXK110N65B4H1  
IXXX110N65B4H1  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
200  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
180  
160  
140  
120  
100  
80  
42  
39  
36  
33  
30  
27  
24  
21  
18  
15  
t r i  
td(on)  
t r i  
td(on)  
R
G
= 2 , V = 15V  
Ω
T
J
= 150ºC, V = 15V  
GE  
GE  
V = 400V  
CE  
V
= 400V  
CE  
I
= 110A  
C
T
J
= 25ºC  
T
J
= 150ºC  
I
= 55A  
C
60  
60  
40  
40  
20  
20  
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100 105 110  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
200  
160  
120  
80  
60  
50  
40  
30  
20  
10  
t r i  
td(on)  
R
G
= 2 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 110A  
C
I
= 55A  
C
40  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXK110N65B4H1  
IXXX110N65B4H1  
Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt  
Fig. 21. Typ. Forward characteristics  
20  
16  
12  
8
200  
175  
150  
125  
100  
75  
T
= 150ºC  
= 300V  
VJ  
V
R
I
F
= 200A  
T
VJ  
= 25ºC  
T
VJ  
= 150ºC  
100A  
50A  
50  
4
25  
0
0
0
0.5  
1
1.5  
2
2.5  
3
1000  
1200  
1400  
1600  
1800  
2000  
VF - [V]  
-diF/ dt [A/µs]  
Fig. 24. Typ. Recovery Time trr vs. -diF/dt  
Fig. 23. Typ. Peak Reverse Current IRM vs. -diF/dt  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
I
F
= 200A  
TVJ = 150ºC  
VR = 300V  
TVJ = 150ºC  
VR = 300V  
100A  
50A  
I
F
= 200A  
100A  
50A  
60  
40  
1000  
1200  
1400  
1600  
1800  
2000  
1000  
1200  
1400  
1600  
1800  
2000  
diF/dt [A/µs]  
-diF/dt [A/µs]  
Fig. 26. Maximum Transient Thermal Impedance ( Diode)  
Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt  
1
5
TVJ = 150ºC  
VR = 300V  
I
F
= 200A  
4
3
2
1
0
0.1  
100A  
0.01  
50A  
0.001  
1000  
1200  
1400  
1600  
1800  
2000  
0.0001  
0.001  
0.01  
0.1  
1
10  
-diF/dt [A/µs]  
PulseWidth[s]
© 2016 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXH_110N65B4(E8-RZ43) 8-24-16  
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