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IXXK100N75B4H1

型号：

IXXK100N75B4H1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

8 页

PDF大小：

293 K

下载PDF手册
Advance Technical Information  
XPTTM 750V IGBT  
GenX4TM w/Diode  
IXXX100N75B4H1  
IXXK100N75B4H1  
VCES = 750V  
IC110 = 100A  
VCE(sat)  2.10V  
tfi(typ) = 110ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
PLUS247  
(IXXX)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
750  
750  
V
V
TJ = 25°C to 175°C, RGE = 1M  
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
Tab  
E
TO-264  
(IXXK)  
IC25  
TC = 25°C (Chip Capability)  
Terminal Current Limit  
TC = 110°C  
240  
160  
100  
120  
A
A
A
A
ILRMS  
IC110  
IF110  
TC = 110°C  
ICM  
TC = 25°C, 1ms  
580  
A
G
C
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 150°C, RG = 2  
Clamped Inductive Load  
I
= 200  
A
VCCEM VCES  
Tab  
E
TSC  
VGE = 15V, TJ = 150°C,  
(SCSOA)  
RG = 20, VCE = 400V, Non-Repetitive  
10  
μs  
G = Gate  
C
= Collector  
E = Emitter  
Tab = Collector  
PC  
TC = 25°C  
880  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
-55 ... +175  
Optimized for 10-30kHz Switching  
Square RBSOA  
High Current Handling Capability  
International Standard Packages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Weight  
PLUS247  
TO-264  
6
10  
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
750  
4.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
6.5  
25 μA  
mA  
±100 nA  
TJ = 125°C  
5
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
TJ = 150°C  
1.74  
2.07  
2.10  
V
V
High Frequency Power Inverters  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS100945A(10/18)  
IXXX100N75B4H1  
IXXK100N75B4H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
PLUS247TM Outline  
Min.  
Typ.  
Max.  
A
E1  
E
Q
A2  
gfs  
IC = 60A, VCE = 10V, Note 1  
32  
54  
S
D2  
R
D1  
Cies  
Coes  
Cres  
4420  
415  
98  
pF  
pF  
pF  
D
L
VCE = 25V, VGE = 0V, f = 1MHz  
4
1
2
3
L1  
Qg(on)  
Qge  
Qgc  
165  
43  
nC  
nC  
nC  
IC = 100A, VGE = 15V, VCE = 0.5 • VCES  
62  
b
A1  
e
3 PLCS  
C
2 PLCS  
b2 2 PLCS  
b4  
td(on)  
tri  
Eon  
td(off)  
tfi  
27  
44  
ns  
ns  
Terminals: 1 - Gate  
Inductive load, TJ = 25°C  
2,4 - Collector  
3 - Emitter  
IC = 50A, VGE = 15V  
2.75  
155  
110  
1.75  
mJ  
ns  
VCE = 400V, RG = 2  
ns  
Note 2  
Eoff  
mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
24  
43  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 50A, VGE = 15V  
4.00  
190  
236  
3.00  
mJ  
ns  
VCE = 400V, RG = 2  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
0.15  
TO-264 Outline  
A
E
Reverse Diode (FRD)  
Q
S
R
D
Q1  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
R1  
1
2
3
L1  
VF  
IF = 100A, VGE = 0V, Note 1  
1.5  
1.7  
2.2  
V
V
TJ = 150°C  
L
c
IRM  
trr  
37  
A
IF = 100A, VGE = 0V, TJ = 150°C  
-diF/dt = 500A/sVR = 400V  
b
A1  
b1  
b2  
e
x2  
245  
ns  
0P  
4
RthJC  
0.20 °C/W  
Terminals:  
1
= Gate  
2,4 = Collector  
= Emitter  
3
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXX100N75B4H1  
IXXK100N75B4H1  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
200  
180  
160  
140  
120  
100  
80  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
14V  
13V  
12V  
11V  
10V  
11V  
10V  
9V  
9V  
8V  
60  
40  
8V  
7V  
7V  
20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
-50  
4
2
4
6
8
10  
12  
14  
16  
18  
20  
175  
13  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
200  
180  
160  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
V
= 15V  
13V  
12V  
GE  
11V  
I
= 200A  
C
10V  
9V  
I
= 100A  
C
60  
8V  
40  
7V  
6V  
20  
I
= 50A  
C
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
300  
250  
200  
150  
100  
50  
= 25oC  
T
J
= - 40oC  
25oC  
T
J
T
J
= 150oC  
I
= 200A  
C
100A  
50A  
0
5
6
7
8
9
10  
11  
12  
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXXX100N75B4H1  
IXXK100N75B4H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40oC  
VCE = 375V  
IC = 100A  
I
G = 10mA  
25oC  
150oC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
0
40  
80  
120  
160  
200  
240  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
240  
200  
160  
120  
80  
C
ies  
C
oes  
res  
C
T
J
= 150oC  
40  
R
= 2  
Ω
G
= 1 MHz  
f
dv / dt < 10V / ns  
10  
0
0
5
10  
15  
20  
25  
30  
35  
100  
200  
400  
500  
600  
700  
800  
40300  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance (IGBT)  
aaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXX100N75B4H1  
IXXK100N75B4H1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
9
8
7
6
5
4
3
2
1
0
10  
9
11  
10  
9
12  
11  
10  
9
E
E
E
R
E
off  
on  
off  
on  
T = 150oC , V = 15V  
= 2  
V
Ω  
GE  
= 15V  
J
GE  
G
8
V
= 400V  
V
= 400V  
CE  
CE  
8
7
I
= 100A  
C
7
8
6
T = 150oC  
J
6
7
5
5
6
4
4
5
3
3
4
T = 25oC  
J
I
= 50A  
C
2
2
3
1
2
1
2
3
4
5
6
7
8
9
10  
11 12  
13  
14  
15  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
10  
9
8
7
6
5
4
3
2
1
0
11  
10  
9
270  
260  
250  
240  
230  
220  
210  
200  
190  
420  
380  
340  
300  
260  
220  
180  
140  
100  
E
R
E
off  
on  
t f i  
td(off)  
T = 150oC, V = 15V  
= 2  
V
Ω  
GE = 15V  
G
J
GE  
VCE = 400V  
V
= 400V  
CE  
IC = 100A  
8
7
6
I
= 50A  
C
5
I
= 100A  
C
4
3
IC = 50A  
2
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
240  
220  
200  
180  
160  
140  
120  
100  
320  
280  
240  
200  
160  
120  
80  
220  
200  
180  
160  
140  
120  
100  
t f i  
td(off)  
t f i  
td(off)  
280  
240  
200  
160  
120  
80  
R
G
= 2 , V = 15V  
Ω  
R
G
= 2 , V = 15V  
Ω  
GE  
GE  
V
= 400V  
V
= 400V  
CE  
CE  
I
= 50A  
C
T = 150oC  
J
I
= 100A  
C
T = 25oC  
J
40  
40  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXXX100N75B4H1  
IXXK100N75B4H1  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
140  
120  
100  
80  
34  
32  
30  
28  
26  
24  
22  
220  
200  
180  
160  
140  
120  
100  
80  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
t r i  
td(on)  
t r i  
td(on)  
T = 150oC, V = 15V  
R
G
= 2 , V = 15V  
Ω  
GE  
J
GE  
T = 25oC  
J
V
= 400V  
CE  
V
= 400V  
CE  
T = 150oC  
J
I
= 100A  
C
60  
I
= 50A  
C
60  
40  
40  
20  
20  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
t r i  
td(on)  
R
G
= 2 , V = 15V  
Ω  
GE  
V
= 400V  
CE  
I
= 100A  
C
60  
40  
I
= 50A  
75  
C
20  
0
25  
50  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXX100N75B4H1  
IXXK100N75B4H1  
Fig. 21. Diode Forward Characteristics  
Fig. 22. Reverse Recovery Charge vs. -diF/dt  
200  
180  
160  
140  
120  
100  
80  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
T = 150oC  
J
V
= 400V  
R
I
F
= 100A  
75A  
T = 25oC  
J
T = 150oC  
J
50A  
60  
40  
20  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
200  
400  
600  
800  
1000  
1200  
1400  
1400  
1
-diF/ dt (A/μs)  
VF (V)  
i
Fg. 24. Reverse Recovery Time vs. -diF/dt  
Fig. 23. Reverse Recovery Current vs. -diF/dt  
360  
320  
280  
240  
200  
160  
50  
45  
40  
35  
30  
25  
20  
15  
T = 150oC  
T = 150oC  
J
J
I
F
= 100A, 75A, 50A  
V
= 400V  
R
V
= 400V  
R
I
F
= 100A  
75A  
50A  
120  
200  
400  
600  
800  
1000  
1200  
1400  
200  
400  
600  
800  
1000  
1200  
diF/dt (A/μs)  
-diF/dt (A/μs)  
I
Fig. 25. Dynamic Parameters QRR, RR vs.  
Fig. 26. Maximum Transient Thermal Impedance (Diode)  
Junction Temperature  
aaa  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.3  
0.1  
V
= 400V  
R
I
= 100A  
F
K
I
RR  
F
-diF /dt = 500A/μs  
K
Q
RR  
F
0.01  
20  
40  
60  
80  
100  
120  
140  
160  
0.00001  
0.0001  
0.001  
0.01  
0.1  
TJ (ºC)  
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXH_100N75B4(E8-RY46) 10-08-18-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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