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RYE002N05TCL

型号：

RYE002N05TCL

品牌：

ROHM[ ROHM ]

页数：

6 页

PDF大小：

251 K

下载PDF手册
0.9V Drive Nch MOSFET  
RYE002N05  
z Structure  
z Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
EMT3  
(SC-75A)  
<SOT-416>  
zFeatures  
1) High speed switing.  
2) Small package(EMT3).  
3) Ultra low voltage drive(0.9V drive).  
Abbreviated symbol : QJ  
z Application  
Switching  
z Packaging specifications  
z Inner circuit  
(3)  
Package  
Taping  
TCL  
3000  
{
Type  
Code  
Basic ordering unit (pieces)  
RYE002N05  
z Absolute maximum ratings (Ta = 25°C)  
Parameter Sbol  
Drain-source voltage  
(1) Source  
(2) Gate  
(3) Drain  
(2)  
(1)  
Limits  
50  
Un
V
∗1 ESD PROTECTION DIODE  
∗2 BODY DIODE  
VGSS  
ID  
Gate-source voltage  
±8  
V
Continuous  
Pulsed  
±200  
800  
125  
mA  
mA  
mA  
mA  
mW  
°C  
Drain current  
*1  
IDP  
Contou
lsed  
IS  
Source current  
(Body Diode)  
*1  
2  
I
800  
Power dissipation  
D  
150  
Channel temperature  
Th  
Tstg  
150  
Range of stotemperature  
*1 Pw≤10µs, Dcycle1%  
−55 to +150  
°C  
*2 Each teunted on a recommended land.  
z hermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
833  
Unit  
Channel to Ambient  
°C / W  
* Each terminal mounted on a recommended land.  
www.rohm.com  
©2011 ROHM Co., Ltd. All rights reserved.  
2011.05 - Rev.B  
1/5  
Data Sheet  
RYE002N05  
ꢀ
z Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
IGSS  
Min.  
Typ.  
-
Max.  
Unit  
µA VGS=±8V, VDS=0V  
ID=1mA, VGS=0V  
µA VDS=50V, VGS=0V  
Conditions  
Gate-source leakage  
-
±10  
Drain-source breakdown voltage V (BR)DSS  
50  
-
-
1
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
-
-
VGS (th)  
0.3  
-
0.8  
2.2  
2.4  
2.8  
3.3  
9.0  
-
V
Ω
S
VDS=10V, ID=1mA  
-
1.6  
1.7  
2.0  
2.2  
3.0  
-
ID=200mA, VGS=4.5V  
ID=200mA, VGS=2.5V  
ID=200mA, VGS=1.5V  
ID=100mA, VGS=1.2V  
ID=10mA, VGS=0.9V  
ID=200mA, VDS=10V  
-
*
Static drain-source on-state  
resistance  
RDS (on)  
-
-
-
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
0.2  
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
26  
6
-
pF VDS=10V  
-
pF VGS=0V  
3
-
pF f=1MHz  
5
-
ns =10A, DD 25V  
ns 4.5V  
ns 50Ω  
ns RG=10Ω  
*
*
*
*
8
-
Turn-off delay time  
Fall time  
td(off)  
tf  
17  
43  
-
-
*Pulsed  
zBody diode characteristics (Source-Drain) (Ta = 25°C)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
.  
-
Max. Unit  
1.2  
Conitions  
*
VSD  
=200mA, VGS=0V  
*Pulsed  
www.rohm.com  
2/5  
2011.05 - Rev.B  
©2011 ROHM Co., Ltd. All rights reserved.  
Data Sheet  
RYE002N05  
z Electrical characteristic curves (Ta = 25°C)  
0.2  
0.1  
0
0.2  
1
0.1  
VDS= 10V  
Pulsed  
VGS= 4.5V  
VGS= 4.5V  
VGS= 2.5V  
VGS= 1.5V  
VGS= 1.2V  
Ta= 125°C  
VGS= 2.5V  
VGS= 1.5V  
VGS= 1.2V  
Ta= 75°C  
Ta= 25°C  
VGS= 0.9V  
0.1  
VGS= 0.9V  
VGS= 0.8V  
Ta= − 25°C  
Ta=25°C  
Pulsed  
VGS= 0.8V  
0.01  
0.001  
Ta=25°C  
Pulsed  
VGS= 0.7V  
8 10  
VGS= 0.7V  
0.8  
0
0
0.4  
0.6  
0.8  
1
0
0.2  
0.4  
0.6  
1
0
2
4
6
DRAIN-SOURCE VOLTAGE : VDS[V]  
DRAIN-SOURCE VOLTAGE : VDS[V]  
GAE VOLTAGE : VGS[V]  
Fig.3 al Transfer Characteristics  
Fig.1 Typical Output Characteristics( Ⅰ)  
Fig.2 Typical Output Characteristics( Ⅱ)  
10000  
1000  
100  
10000  
1000  
10
10000  
100  
VGS= 4.5V  
Pulsed  
Ta= 25°C  
Pulsed  
VG5V  
Psed  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= − 25°C  
VGS= 0.9V  
VGS= 1.2V  
VGS= 1.5V  
VGS= 2.5V  
VGS= 4.5V  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= − 25°C  
0.001  
0.01  
0.1  
1
001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
10  
DRAIN-CURRENT : ID[A]  
DRAINID[A]  
DRAIN-CURRENT : ID[A]  
Fig.4 Static Drain-Source On-State  
Resistance vs. Drain CurrenⅠ)  
Fig.5 Static Drn-State  
Fig.6 Static Drain-Source On-State  
Resistance ain Current(Ⅱ)  
Resistance vs. Drain Current(Ⅲ)  
10000  
1000  
100  
1000  
100  
10000  
10
100  
VGS= 1.2V  
Pulsed  
VGS= 0.9V  
Pulsed  
VGS= 1.5V  
Pulsed  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= − 25°C  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= − 25°C  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= − 25°C  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
Fig.7 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅳ)  
Fig.8 Static Drain-Source On-State  
Fig.9 Static Drain-Source On-State  
Resistance vs. Drain Current(Ⅴ)  
Resistance vs. Drain Current(Ⅵ)  
www.rohm.com  
©2011 ROHM Co., Ltd. All rights reserved.  
2011.05 - Rev.B  
3/5  
Data Sheet  
RYE002N05  
10  
1
5000  
4000  
3000  
2000  
1000  
0
VDS= 10V  
VGS=0V  
Pulsed  
Ta=25°C  
Pulsed  
Pulsed  
ID= 0.01A  
ID= 0.20A  
1
0.1  
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
Ta= − 25°C  
Ta= −25°C  
Ta=25°C  
Ta=75°C  
Ta=125°C  
0.1  
0.01  
0.01  
0.1  
DRAIN-CURRENT : ID[A]  
1
0
0.5  
1
1.5  
0
2
4
6
8
SOURCE-DRAIN VOLTAGE : VSD [V]  
GATE-RCE VOLTAGE : VGS[V]  
Fig.12 rain-Source On-State  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
Fig.11 Reverse Drain Current  
vs. Sourse-Drain Voltage  
ce vs. Gate Source Voltage  
1000  
100  
10  
0  
Ta=25°C  
Ta=25°C  
f=1MHz  
VGS=0
4
VDD=25V  
VGS=4.5V  
RG=10Ω  
Pulsed  
td(off)  
tf  
3
2
1
0
100  
1
1
Ciss  
Ta=25°C  
VDD=25V  
ID= 0.2A  
RG=10Ω  
Pulsed  
rss  
Coss  
td(on)  
tr  
0.1  
1
0.01  
0.1  
1
10  
100  
0.01  
1
0.5  
1
5  
DRAIN-CURRENT : ID[A]  
Fig.13 Switching Characteristics  
TOTAL GATE CHGE : nC
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.14 Tynce  
vs. Voltage  
Fig.15 Typical Capacitance  
vs. Drain-Source Voltage  
www.rohm.com  
©2011 ROHM Co., Ltd. All rights reserved.  
2011.05 - Rev.B  
4/5  
Data Sheet  
RYE002N05  
ꢀ
z Measurement circuits  
Pulse width  
90%  
VGS  
ID  
V
DS  
50%  
10%  
50%  
V
V
GS  
DS  
R
L
10%  
10%  
90%  
D.U.T.  
V
DD  
RG  
90%  
t
d(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-1 Switching time measurement circuit  
Fig.1-2 Switching waveforms  
z Notice  
This product might cause chip aging and breakdown under the largelectrified enviroent. Please consider to design  
ESD protection circuit.  
www.rohm.com  
5/5  
2011.05 - Rev.B  
©2011 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specificatins,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contined herein  
illustrate the standard usage and operations of the Products. The peripheral condns must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified his document.  
However, should you incur any damage arising from any inaccuracy misrint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show ical functions of and  
examples of application circuits for the Products. ROHM dnot grant you, expliitly or  
implicitly, any license to use or exercise intellectual property r otr rights held by ROan
other parties. ROHM shall bear no responsibility whatsoeveor any dispute arisfrom the  
use of such technical information.  
The Products specified in this document are inteded be used with gel-use electronic  
equipment or devices (such as audio visual equpmt, office-automatioent, commu-  
nication devices, electronic appliances and mement devices).  
The Products specified in this documeare t designed to be radiation tolerant.  
While ROHM always makes effots enhance the quaand reliability of its Products, a  
Product may fail or malfunction a variety of reasons.  
Please be sure to implemyour equipmehe Products safety measures to guard  
against the possibility of cal injury, fire oer damage caused in the event of the  
failure of any Prodct, such as derating, redundafire control and fail-safe designs. ROHM  
shall bear no respnsibty whatsoever for your use of any Product outside of the prescribed  
scope or not in accoance with the instrction manual.  
The oduarnot designed or mnufactured to be used with any equipment, device or  
swhich requires an extremely h level of reliability the failure or malfunction of which  
esn a direct threat uman life or create a risk of human injury (such as a medical  
instment, transporttion ipent, aerospace machinery, nuclear-reactor controller, fuel-  
controler or other safdev). ROHM shall bear no responsibility in any way for use of any  
of the Products hove special purposes. If a Product is intended to be used for any  
such special purpe, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120  
A
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