1CYM1730
CYM1730
64K x 24 Static RAM Module
using six 32K x 8 static RAMs in SOJ packages mounted onto
an epoxy laminate board with pins.
Features
• High-density 1.5M SRAM module
• High-speed CMOS SRAMs
— Access time of 25 ns
Writing to the device is accomplished when the chip select
(CS) and write enable (WE) inputs are both LOW. Data on the
input/output pins (I/O through I/O ) of the device is written
0
23
into the memory location specified on the address pins (A
0
• 56-pin, 0.5-inch-high ZIP package
• Low active power
through A ).
15
Reading the device is accomplished by taking the chip select
(CS) and output enable (OE) LOW while write enable (WE)
remains HIGH. Under these conditions, the contents of the
memory location specified on the address pins will appear on
the input/output pins.
— 2.8W (max. for t = 25 ns)
AA
• SMD technology
• TTL-compatible inputs and outputs
• Commercial temperature range
• Small PCB footprint
The input/output pins remain in a high-impedance state unless
the module is selected, outputs are enabled, and write enable
is HIGH.
— 1.05 sq. in.
Functional Description
The CYM1730 is a high-performance 1.5M static RAM module
organized as 64K words by 24 bits. This module is constructed
Logic Block Diagram
Pin Configuration
A – A
0
14
15
ZIP
Top View
OE
WE
V
CC
1
3
V
CC
2
I/O
I/O
I/O
I/O
0
2
4
6
I/O
I/O
I/O
I/O
1
3
5
7
4
5
32K x 8
SRAM
32K x 8
SRAM
6
7
8
9
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
11
13
15
17
19
21
23
25
27
29
31
GND
GND
A
0
A
1
3
5
A
2
A
A
4
6
A
15
A
I/O – I/O
16
23
A
1 OF 2
DECODER
8
A
7
CS
NC
I/O
I/O
I/O
I/O
GND
WE
NC
GND
I/O
I/O
I/O
I/O
NC
OE
A
A
A
A
CS
8
32K x 8
SRAM
32K x 8
SRAM
9
10
12
14
11
13
15
33
35
37
39
41
43
45
47
49
51
53
55
A
8
9
I/O – I/O
8
15
A
10
8
11
13
15
A
12
A
14
GND
I/O
I/O
18
I/O
I/O
22
V
CC
32K x 8
SRAM
32K x 8
SRAM
GND
16
I/O
I/O
I/O
17
19
21
23
20
I/O
V
CC
I/O – I/O
0
7
1730-2
8
1730-1
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
July 1991 – Revised January 1995
•
408-943-2600
