HYS[64/72]D[16/32/64][300/301/320][G/H]U–[5/6]–C  
					Unbuffered DDR SDRAM Modules  
					Electrical Characteristics  
					3.2  
					Current Conditions and Specification  
					Table 10  
					IDD Conditions  
					Parameter  
					Symbol  
					Operating Current 0  
					IDD0  
					one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle;  
					address and control inputs changing once every two clock cycles.  
					Operating Current 1  
					IDD1  
					one bank; active/read/precharge; Burst Length = 4; see component data sheet.  
					Precharge Power-Down Standby Current  
					all banks idle; power-down mode; CKE ≤ VIL,MAX  
					IDD2P  
					IDD2F  
					Precharge Floating Standby Current  
					CS ≥ VIH,,MIN, all banks idle; CKE ≥ VIH,MIN  
					;
					address and other control inputs changing once per clock cycle; VIN = VREF for DQ, DQS and DM.  
					Precharge Quiet Standby Current  
					IDD2Q  
					CS ≥ VIHMIN, all banks idle; CKE ≥ VIH,MIN; VIN = VREF for DQ, DQS and DM;  
					address and other control inputs stable at ≥ VIH,MIN or ≤ VIL,MAX  
					.
					Active Power-Down Standby Current  
					one bank active; power-down mode; CKE ≤ VILMAX; VIN = VREF for DQ, DQS and DM.  
					IDD3P  
					IDD3N  
					Active Standby Current  
					one bank active; CS ≥ VIH,MIN; CKE ≥ VIH,MIN; tRC = tRAS,MAX  
					DQ, DM and DQS inputs changing twice per clock cycle;  
					address and control inputs changing once per clock cycle.  
					;
					Operating Current Read  
					IDD4R  
					one bank active; Burst Length = 2; reads; continuous burst;  
					address and control inputs changing once per clock cycle;  
					50 % of data outputs changing on every clock edge;  
					CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B; IOUT = 0 mA  
					Operating Current Write  
					IDD4W  
					one bank active; Burst Length = 2; writes; continuous burst;  
					address and control inputs changing once per clock cycle;  
					50 % of data outputs changing on every clock edge;  
					CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B  
					Auto-Refresh Current  
					IDD5  
					IDD6  
					IDD7  
					t
					RC = tRFCMIN, burst refresh  
					Self-Refresh Current  
					CKE ≤ 0.2 V; external clock on  
					Operating Current 7  
					four bank interleaving with Burst Length = 4; see component data sheet.  
					Internet Data Sheet  
					12  
					Rev. 1.11, 2007 - 01  
					09152006-1LHY-N6G4