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RZE002P02TL

型号:

RZE002P02TL

品牌:

ROHM[ ROHM ]

页数:

5 页

PDF大小:

160 K

RZE002P02  
1.2V Drive Pch MOSFET  
RZE002P02  
zStructure  
zDimensions (Unit : mm)  
Silicon P-channel MOSFET  
EMT3  
0.7  
1.6  
0.3  
zFeatures  
0.55  
1) High speed switching.  
2) Small package (EMT3).  
3) 1.2V drive.  
(
3
)
(
2
)
( )  
1
0.2  
0.2  
0.15  
0.5 0.5  
1.0  
zApplications  
Switching  
(1)Source  
(2)Gate  
(3)Drain  
Abbreviated symbol : YK  
zPackage specifications  
zInner circuit  
Package  
Taping  
TL  
(3)  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RZE002P02  
2  
(2)  
1  
(1)  
(1) Source  
(2) Gate  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
(3) Drain  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Symbol  
Limits  
20  
10  
Unit  
V
VDSS  
VGSS  
ID  
Gate-source voltage  
V
Continuous  
Pulsed  
200  
mA  
mA  
mA  
mA  
mW  
°C  
Drain current  
1  
IDP  
800  
Continuous  
Pulsed  
IS  
100  
800  
150  
Souce current  
(Body diode)  
1  
2  
ISP  
PD  
Total power dissipation  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
55 to +150  
°C  
1 Pw10µs, Duty cycle1%  
2 Each terminal mounted on a recommended land  
zThermal resistance  
Parameter  
Symbol  
Limits  
833  
Unit  
°C/W  
Channel to ambient  
Rth(ch-a)  
Each terminal mounted on a recommended land  
www.rohm.com  
2009.06 - Rev.A  
1/4  
c
2009 ROHM Co., Ltd. All rights reserved.  
RZE002P02  
Data Sheet  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
Unit  
Gate-source leakage  
IGSS  
10  
µA VGS  
=
10V, VDS=0V  
Drain-source breakdown voltage V(BR) DSS 20  
V
ID= 1mA, VGS=0V  
Zero gate voltage drain current  
IDSS  
1  
−1.0  
1.2  
1.5  
2.2  
3.5  
9.6  
µA VDS= 20V, VGS=0V  
Gate threshold voltage  
VGS (th) 0.3  
V
VDS= 10V, ID= 100µA  
ID= 200mA, VGS= 4.5V  
ID= 100mA, VGS= 2.5V  
ID= 100mA, VGS= 1.8V  
ID= 40mA, VGS= 1.5V  
ID= 10mA, VGS= 1.2V  
VDS= 10V, ID= 200mA  
VDS= 10V  
0.8  
1.0  
1.3  
1.6  
2.4  
115  
10  
6
Static drain-source on-state  
resistance  
RDS (on)  
S
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Yfs  
Ciss  
0.2  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
Coss  
Crss  
td (on)  
VGS= 0V  
f=1MHz  
6
VDD 10V  
I
V
R
R
D
= 100mA  
t
r
4
GS= 4.5V  
Turn-off delay time  
Fall time  
td (off)  
17  
17  
1.4  
0.3  
0.3  
L
100Ω  
= 10Ω  
tf  
G
Qg  
Total gate charge  
Gate-source charge  
V
DD 10  
V
RL  
50Ω  
Q
gs  
gd  
I
D= 200mA  
RG  
= 10Ω  
VGS= 4.5V  
Gate-drain charge  
Pulsed  
Q
zBody diode characteristics (Source-drain)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
Unit  
V
Forward voltage  
V
SD  
1.2  
IS= 200mA, VGS=0V  
Pulsed  
www.rohm.com  
2009.06 - Rev.A  
2/4  
c
2009 ROHM Co., Ltd. All rights reserved.  
RZE002P02  
Data Sheet  
zElectrical characteristics curves  
0.2  
0.2  
0.15  
0.1  
1
0.1  
Ta=25°C  
Ta=25°C  
Pulsed  
VDS= -10V  
Pulsed  
Pulsed  
VGS= -10V  
VGS= -4.5V  
VGS= -4.5V  
VGS= -2.5V  
VGS= -1.8V  
VGS= -1.5V  
0.15  
0.1  
0.05  
0
VGS= -3.2V  
Ta= 125°C  
VGS= -2.5V  
VGS= -2.0V  
VGS= -1.8V  
Ta= 75°C  
Ta= 25°C  
Ta= - 25°C  
VGS= -1.2V  
0.01  
VGS= -1.5V  
0.05  
0
0.001  
0.0001  
VGS= -1.2V  
VGS= -1.0V  
VGS= -1.0V  
0.8  
0
0.2  
0.4  
0.6  
1
0
0.5  
1
1.5  
0
2
4
6
8
10  
DRAIN-SOURCE VOLTAGE : -VDS[V]  
Fig.1 Typical Output Characteristics(  
DRAIN-SOURCE VOLTAGE : -VDS[V]  
GATE-SOURCE VOLTAGE : -VGS[V]  
Fig.3 Typical Transfer Characteristics  
)
Fig.2 Typical Output Characteristics(  
)
10000  
1000  
100  
10000  
1000  
100  
10000  
1000  
100  
Ta=25°C  
Pulsed  
VGS= -4.5V  
Pulsed  
VGS= -2.5V  
Pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
VGS= -1.2V  
VGS= -1.5V  
VGS= -1.8V  
VGS= -2.5V  
VGS= -4.5V  
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
DRAIN-CURRENT : -ID[A]  
DRAIN-CURRENT : -ID[A]  
DRAIN-CURRENT : -ID[A]  
Fig.4 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.5 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.6 Static Drain-Source On-State  
Resistance vs. Drain Current(  
)
)
)
10000  
10000  
1000  
100  
10000  
VGS= -1.5V  
Pulsed  
VGS= -1.8V  
VGS= -1.2V  
Pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
Pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
1000  
1000  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta= -25°C  
100  
0.001  
100  
0.001  
0.001  
0.01  
0.1  
1
0.01  
0.1  
0.01  
0.1  
DRAIN-CURRENT : -ID[A]  
DRAIN-CURRENT : -ID[A]  
DRAIN-CURRENT : -ID[A]  
Fig.9 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.7 Static Drain-Source On-State  
Resistance vs. Drain Current(  
Fig.8 Static Drain-Source On-State  
Resistance vs. Drain Current(  
)
)
)
www.rohm.com  
2009.06 - Rev.A  
3/4  
c
2009 ROHM Co., Ltd. All rights reserved.  
RZE002P02  
Data Sheet  
1
1.0  
5
4
3
2
1
0
VGS=0V  
Pulsed  
VDS= -10V  
Ta=25°C  
Pulsed  
Pulsed  
ID= -0.2A  
0.1  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
Ta=-25°C  
Ta=25°C  
Ta=75°C  
Ta=125°C  
ID= -0.01A  
0.01  
0.1  
0
0.5  
1
1.5  
0
2
4
6
8
10  
0.01  
0.1  
1
GATE-SOURCE VOLTAGE : -VGS[V]  
SOURCE-DRAIN VOLTAGE : -VSD [V]  
DRAIN-CURRENT : -ID[A]  
Fig.11 Reverse Drain Current  
vs. Sourse-Drain Voltage  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
Fig.12 Static Drain-Source On-State  
Resistance vs. Gate Source Voltage  
1000  
100  
10  
1000  
100  
10  
5
4
3
2
1
0
Ta=25°C  
Ta=25°C  
f=1MHz  
VGS=0V  
VDD= -10V  
VGS=-4.5V  
RG=10  
Pulsed  
td(off)  
Ciss  
tf  
Ta=25°C  
VDD= -10V  
VGS=-0.2V  
RG=10Ω  
Pulsed  
Coss  
Crss  
td(on)  
tr  
1
1
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
0
0.5  
1
1.5  
DRAIN-SOURCE VOLTAGE : -VDS[V]  
TOTAL GATE CHARGE : Qg [nC]  
Fig.14 Dynamic Input Characteristics  
DRAIN-CURRENT : -ID[A]  
Fig.13 Switching Characteristics  
Fig.15 Typical Capacitance  
vs. Drain-Source Voltage  
zMeasurement circuit  
Pulse Width  
VGS  
ID  
V
V
GS  
10%  
50%  
VDS  
50%  
90%  
R
L
D.U.T.  
10%  
90%  
10%  
90%  
V
DD  
RG  
DS td(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-1 Switching Time Measurement Circuit  
Fig.1-2 Switching Waveforms  
V
G
I
D
VGS  
VDS  
Q
g
RL  
V
GS  
I
G(Const.)  
D.U.T.  
VDD  
Q
gs  
Qgd  
RG  
Charge  
Fig.2-1 Gate Charge Measurement Circuit  
Fig.2-2 Gate Charge Waveform  
zNotice  
This product might cause chip aging and breakdown under the large electrified environment.  
www.rohm.com  
2009.06 - Rev.A  
4/4  
c
2009 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,  
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of  
any of the Products for the above special purposes. If a Product is intended to be used for any  
such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2009 ROHM Co., Ltd. All rights reserved.  
R0039  
A
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