SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN2120G
ISSUE 2 - FEBRUARY 1996
✪
FEATURES:
D
*
*
VDS - 200V
RDS(ON) - 10Ω
S
PARTMARKING DETAIL - ZVN2120
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo lta g e
200
Co n tin u o u s Drain Cu rren t at Ta m b=25°C
Pu ls ed Dra in Cu rre n t
ID
320
m A
A
IDM
2
Ga te-S o u rce Vo lta g e
VGS
V
± 20
2
Po w er Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
W
Tj:Ts tg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre akd o w n
Vo lta g e
BVDS S
200
V
ID=1m A, VGS=0V
Gate-Sou rce Threshold Voltage VGS (th )
1
3
V
ID=1m A, VDS= VGS
Ga te-Bo d y Lea ka g e
IGS S
IDS S
20
n A
V
GS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
10
100
VDS=200V, VGS=0V
VDS=160V, VGS=0V,
T=125°C(2)
µA
µA
On -S ta te Dra in Cu rre n t(1)
ID(o n )
500
100
m A
VDS=25V, VGS=10V
VGS=10V, ID=250m A
S tatic Drain -S o u rce On -S ta te
Res ista n ce (1)
RDS (o n )
10
Ω
Forward Transconductance(1)(2) g fs
m S
p F
p F
VDS=25V, ID=250m A
In p u t Ca p a cita n ce (2)
Cis s
Co s s
85
20
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crs s
7
p F
n s
n s
n s
n s
Tu rn -On De la y Tim e (2)(3)
Ris e Tim e (2)(3)
td (o n )
8
tr
8
VDD≈25V, ID=250m A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
td (o ff)
tf
20
12
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
3 - 390
