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UZNBG2000X10

型号:

UZNBG2000X10

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

7 页

PDF大小:

512 K

ZNBG2000  
ZNBG2001  
FET BIAS CONTROLLER  
DEVICE DESCRIPTION  
The ZNBG series of devices are designed to meet the  
bias requirements of GaAs and HEMT FETs  
commonly used in satellite receiver LNBs, PMR,  
cellular telephones etc. with a minimum of external  
components.  
It is possible to use less than the devices full  
complement of FET bias controls, unused drain and  
gate connections can be left open circuit without  
affecting operation of the remaining bias circuits.  
In order to protect the external FETs the circuits have  
been designed to ensure that, under any conditions  
including power up/down transients, the gate drive  
from the bias circuits cannot exceed the range -3.5V  
to 0.7V. Furthermore if the negative rail experiences a  
fault condition, such as overload or short circuit, the  
drain supply to the FETs will shut down avoiding  
excessive current flow.  
With the addition of two capacitors and a resistor the  
devices provide drain voltage and current control for  
2 external grounded source FETs, generating the  
regulated negative rail required for FET gate biasing  
whilst operating from a single supply. This negative  
bias, at -3 volts, can also be used to supply other  
external circuits.  
The ZNBG2000/1 contains two bias stages. A single  
resistor allows FET drain current to be set to the  
desired level. The series also offers the choice of  
drain voltage to be set for the FETs, the ZNBG2000  
gives 2.2 volts drain whilst the ZNBG2001 gives 2  
volts.  
The ZNBG2000/1 are available in MSOP10 packages  
for the minimum in devices size. Device operating  
temperature is -40 to 80°C to suit a wide range of  
environmental conditions.  
These devices are unconditionally stable over the full  
working temperature with the FETs in place, subject  
to the inclusion of the recommended gate and drain  
capacitors. These ensure RF stability and minimal  
injected noise.  
FEATURES  
APPLICATIONS  
Provides bias for GaAs and HEMT FETs  
Satellite receiver LNBs  
Drives up to two FETs  
Private mobile radio (PMR)  
Single in single out C Band LNB  
Cellular telephones  
Dynamic FET protection  
Drain current set by external resistor  
Regulated negative rail generator requires only 2  
external capacitors  
Choice in drain voltage  
Wide supply voltage range  
MSOP surface mount package  
ISSUE 1 - AUGUST 2001  
1
ZNBG2000  
ZNBG2001  
ABSOLUTE MAXIMUM RATINGS  
Supply Voltage  
-0.6V to 15V  
Output Current  
100mA  
Supply Current  
100mA  
Operating Temperature  
Storage Temperature  
-40 to 80°C  
-40 to 85°C  
Drain Current (per FET)  
(set by RCAL1 and RCAL2  
0 to 15mA  
)
Power Dissipation (T  
MSOP10  
amb 25 C)  
500mW  
ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise  
SYMBOL PARAMETER  
CONDITIONS  
UNITS  
LIMITS  
Typ  
Min  
5
Max  
12  
VCC  
ICC  
Supply Voltage  
Supply Current  
V
ID1 and ID2=0  
5
24  
10  
30  
mA  
mA  
ID1 and ID2=10mA  
VSUB  
Substrate Voltage  
I
= 0  
-3.5  
150  
-2.8  
-2  
-2  
V
V
ISSUUBB= -200µA  
(Internally generated)  
Output Noise  
Drain Voltage  
Gate Voltage  
END  
ENG  
C =4.7nF, C =10nF  
CGG=4.7nF, CDD=10nF  
0.02  
Vpkpk  
Vpkpk  
0.005  
f
Oscillator Freq.  
330  
10  
800  
kHz  
O
DRAIN CHARACTERISTICS  
IDO  
Output Current Range  
Set by RCAL1  
0
8
15  
12  
mA  
mA  
ID  
Current  
Current Change  
with VCC  
VCC=5 to 12V  
0.5  
%/V  
IDV  
IDT  
VD  
with Tj  
Tj=-40 to +80°C  
0.05  
%/°C  
Voltage  
ZNBG2000 ID1 and ID2=10mA  
ZNBG2001  
2
2.2  
2
2.4  
2.2  
V
V
1.8  
Voltage Change  
with VCC  
VCC= 5 to 12V  
0.5  
50  
%/V  
VDV  
VDT  
with Tj  
Tj = -40 to +80°C  
ppm  
GATE CHARACTERISTICS  
IGO  
Output Current Range  
Output Voltage  
Output Low  
-40  
2000  
µA  
VOL  
I
and ID2=12mA  
D1 and I =0  
-3.5  
-3.5  
0.4  
-2  
-2  
1
V
V
V
IG1  
G2  
ID1 and ID2=12mA  
IG1 and IG2= -10µA  
VOH  
Output High  
ID1 and ID2= 8mA  
IG1 and IG2= 0  
Notes:  
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB, of 47nF are required for this  
purpose.  
2. The characteristics are measured using an external reference resistors RCAL1 of value 16kwired from pin RCAL1 to ground.  
3. Noise voltage is not measured in production.  
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. CG, 4.7nF, are connected between gate outputs and  
ISSUE 1 - AUGUST 2001  
2
ZNBG2000  
ZNBG2001  
TYPICAL CHARACTERISTICS  
16  
14  
12  
10  
8
Note:- Operation with loads > 200µA  
is not guaranteed.  
Vcc = 5V  
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
Vcc = 5V  
6V  
8V  
10V  
6
4
2
0
0
10  
20  
30  
40  
50  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Rcal (k)  
External Vsub Load (mA)  
JFET Drain Current v Rcal  
Vsub v External Load  
2.4  
2.3  
2.2  
2.1  
2.0  
2.2  
ZNBG2000  
ZNBG2001  
2.1  
2.0  
1.9  
1.8  
Vcc = 5V  
6V  
Vcc = 5V  
6V  
8V  
10V  
8V  
10V  
2
4
6
8
10  
12  
14  
16  
2
4
6
8
10  
12  
14  
16  
Drain Current (mA)  
Drain Current (mA)  
JFET Drain Voltage v Drain Current  
JFET Drain Voltage v Drain Current  
5
ISSUE 1 - AUGUST 2001  
3
ZNBG2000  
ZNBG2001  
FUNCTIONAL  
FUNCTIONAL DIAGRAM  
DESCRIPTION  
The ZNBG devices provide all the bias requirements  
for external FETs, including the generation of the  
negative supply required for gate biasing, from the  
single supply voltage.  
The drain current taken by the FET is monitored by  
the low value resistor ID Sense. The amplifier driving  
the gate of the FET adjusts the gate voltage of QN so  
that the drain current taken matches the current  
called for by an external resistor RCAL. Both ZNBG  
devices have the facility to program different drain  
currents into selected FETs.  
The diagram above shows a single stage from the  
ZNBG series. The ZNBG2000/1 contains 2 such  
stages.  
Since the FET is a depletion mode transistor, it is  
usually necessary to drive its gate negative with  
respect to ground to obtain the required drain  
current. To provide this capability powered from a  
single positive supply, the device includes a low  
current negative supply generator. This generator  
uses an internal oscillator and two external  
The drain voltage of the external FET QN is set by the  
ZNBG device to its normal operating voltage. This is  
determined by the on board VD Set reference, for the  
ZNBG2000 this is nominally 2.2 volts whilst the  
ZNBG2001 provides nominally 2 volts.  
capacitors, CNB and CSUB  
.
7
ISSUE 1 - AUGUST 2001  
4
ZNBG2000  
ZNBG2001  
APPLICATIONS  
TYPICAL APPLICATION CIRCUIT  
16k  
INFORMATION  
Resistor RCAL1 sets the drain current at which all  
The above is a partial application circuit for the ZNBG  
series showing all external components required for  
appropriate biasing. The bias circuits are  
unconditionally stable over the full temperature  
range with the associated FETs and gate and drain  
capacitors in circuit.  
external FETs are operated. If any bias control circuit  
is not required, its related drain and gate connections  
may be left open circuit without affecting the  
operation of the remaining bias circuits. If all FETs  
associated with a current setting resistor are omitted,  
the particular RCAL should still be included. The  
supply current can be reduced, if required, by using a  
high value RCAL resistor (e.g. 470k).  
Capacitors CD and CG ensure that residual power  
supply and substrate generator noise is not allowed  
to affect other external circuits which may be  
sensitive to RF interference. They also serve to  
suppress any potential RF feedthrough between  
stages via the ZNBG device. These capacitors are  
required for all stages used. Values of 10nF and 4.7nF  
respectively are recommended however this is  
design dependent and any value between 1nF and  
100nF could be used.  
The ZNBG devices have been designed to protect the  
external FETs from adverse operating conditions.  
With a JFET connected to any bias circuit, the gate  
output voltage of the bias circuit can not exceed the  
range -3.5V to 0.7V, under any conditions including  
powerup and powerdown transients. Should the  
negative bias generator be shorted or overloaded so  
that the drain current of the external FETs can no  
longer be controlled, the drain supply to FETs is shut  
down to avoid damage to the FETs by excessive  
drain current.  
The capacitors CNB and CSUB are an integral part of  
the ZNBGs negative supply generator. The negative  
bias voltage is generated on-chip using an internal  
oscillator. The required value of capacitors CNB and  
The following diagram show the ZNBG2000/1 in  
typical LNB applications.  
CSUB is 47nF. This generator produces a low current  
supply of approximately -3 volts. Although this  
generator is intended purely to bias the external  
FETs, it can be used to power other external circuits  
via the CSUB pin.  
8
ISSUE 1 - AUGUST 2001  
5
ZNBG2000  
ZNBG2001  
INFORMATION CONT.  
APPLICATIONS  
ZNBG2000/1  
ZNBG2000/01 Pinout For MSOP10  
Package Designator - X  
1
D1  
G1  
VCC  
D2  
GND  
G2  
CNB1  
CNB2  
RCAL  
CSUB  
ORDERING INFORMATION  
Part Number  
Package  
Part Mark  
ZNBG2000  
ZNBG2001  
QTY Reel  
ZNBG2000X10 MSOP10  
ZNBG2001X10 MSOP10  
4000  
4000  
9
ISSUE 1 - AUGUST 2001  
6
ZNBG2000  
ZNBG2001  
PACKAGE DIMENSIONS  
E
F
H
G
A
a
C
D
K
B
DIM  
Millimetres  
1.10  
tol.  
DIM  
F
Millimetres  
4.9  
tol.  
A
B
MAX.  
Ϯ0.15  
Ϯ0.15  
0.23  
+0.07  
-0.08  
G
0.55  
C
D
E
0.18  
0.50  
3.00  
60.05  
BSC  
60.1  
H
K
a
3.00  
0.10  
3.0  
Ϯ0.1  
Ϯ0.05  
Ϯ3.0Њ  
© Zetex plc 2001  
Zetex plc  
Fields New Road  
Chadderton  
Oldham, OL9 8NP  
United Kingdom  
Telephone (44) 161 622 4422  
Fax: (44) 161 622 4420  
Zetex GmbH  
Streitfeldstraße 19  
D-81673 München  
Zetex Inc  
Zetex (Asia) Ltd  
3701-04 Metroplaza, Tower 1  
Hing Fong Road  
Kwai Fong, Hong Kong  
China  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
Suite 315  
700 Veterans Memorial Highway  
Hauppauge NY11788  
USA  
Telephone: (631) 360 2222  
Fax: (631) 360 8222  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services  
concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or  
service.  
For the latest product information, log on to www.zetex.com  
ISSUE 1 - AUGUST 2001  
7
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