请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXXH75N60B3

型号：

IXXH75N60B3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

169 K

下载PDF手册
Advance Technical Information  
XPTTM 600V IGBT  
GenX3TM  
VCES = 600V  
IC110 = 75A  
VCE(sat) ≤ 1.85V  
tfi(typ) = 125ns  
IXXH75N60B3  
Extreme Light Punch Through  
IGBT for 5-30 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
TJ = 25°C to 175°C, RGE = 1MΩ  
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
Tab  
E
IC25  
IC110  
TC = 25°C  
TC = 110°C  
160  
75  
A
A
G = Gate  
E = Emitter  
C
=
Collector  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
300  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
30  
A
500  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5Ω  
Clamped Inductive Load  
ICM = 150  
A
μs  
W
Features  
(RBSOA)  
@VCE ≤ VCES  
z Optimized for 5-30kHz Switching  
z Square RBSOA  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 22Ω, Non Repetitive  
z Avalanche Capability  
z Short Circuit Capability  
z International Standard Package  
PC  
TC = 25°C  
750  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Advantages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z High Power Density  
z 175°C Rated  
z Extremely Rugged  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
z Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z Motor Drives  
z SMPS  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
5.5  
25 μA  
2 mA  
TJ = 150°C  
TJ = 150°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
1.60  
2.00  
1.85  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100327(05/11)  
IXXH75N60B3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXXH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
20  
32  
S
Cies  
Coes  
Cres  
3290  
195  
63  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg(on)  
Qge  
Qgc  
107  
30  
nC  
nC  
nC  
IC = 75A, VGE = 15V, VCE = 0.5 • VCES  
48  
td(on)  
tri  
Eon  
td(off)  
tfi  
35  
75  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 60A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
1.7  
118  
125  
1.5  
mJ  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
160  
2.1  
VCE = 400V, RG = 5Ω  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
mJ  
f
td(on)  
tri  
36  
72  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 150°C  
IC = 60A, VGE = 15V  
Eon  
td(off)  
tfi  
2.6  
145  
170  
2.2  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 400V, RG = 5Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXH75N60B3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
VGE = 15V  
VGE = 15V  
14V  
140  
120  
100  
80  
13V  
12V  
14V  
13V  
11V  
10V  
12V  
60  
11V  
40  
9V  
10V  
9V  
20  
8V  
7V  
7V  
0
0
0
0
9
0.5  
1
1.5  
2
2.5  
3
3.5  
4.5  
15  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
140  
120  
100  
80  
VGE = 15V  
14V  
13V  
I C = 150A  
12V  
11V  
10V  
I C = 75A  
60  
40  
9V  
8V  
6V  
I C = 37.5A  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
120  
100  
80  
60  
40  
20  
0
8
7
6
5
4
3
2
1
TJ = 25ºC  
I C = 150A  
TJ = 150ºC  
25ºC  
- 40ºC  
75A  
37.5A  
4
5
6
7
8
9
10  
11  
12  
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXXH75N60B3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 300V  
I C = 75A  
TJ = - 40ºC, 25ºC, 150ºC  
I G = 10mA  
6
4
2
0
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
160  
140  
120  
100  
80  
C
ies  
oes  
res  
C
C
60  
40  
TJ = 150ºC  
RG = 5  
Ω
20  
dv / dt < 10V / ns  
= 1 MHz  
f
0
10  
100  
200  
300  
400  
500  
600  
0
5
10  
15  
20  
25  
35  
3040
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aasss  
0.4  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH75N60B3  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
3.6  
3.2  
2.8  
2.4  
2
4.5  
4
5
4.5  
4
9
8
7
6
5
4
3
2
1
E
E
on - - - -  
VGE = 15V  
E
E
on - - - -  
off  
RG = 5  
off  
Ω ,  
CE = 400V  
TJ = 150ºC , VGE = 15V  
VCE = 400V  
3.5  
3
V
TJ = 150ºC  
3.5  
3
2.5  
2
I C = 80A  
1.6  
1.2  
0.8  
0.4  
0
TJ = 25ºC  
2.5  
2
1.5  
1
I C = 40A  
1.5  
1
0.5  
0
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
6
5
4
3
2
1
0
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
500  
E
off  
E
on - - - -  
t f i  
t
d(off) - - - -  
450  
400  
350  
300  
250  
200  
150  
100  
50  
RG = 5  
VGE = 15V  
CE = 400V  
Ω ,  
TJ = 150ºC, GE = 15V  
V
V
CE = 400V  
V
I C = 80A  
I C = 40A  
I C = 40A  
I C = 80A  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
240  
220  
200  
180  
160  
140  
120  
100  
220  
200  
180  
160  
140  
120  
100  
80  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
tf i  
td(on)  
- - - -  
t f i  
td(off)  
- - - -  
RG = 5  
, VGE = 15V  
Ω
RG = 5  
,
VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
I C = 40A  
TJ = 150ºC  
TJ = 25ºC  
I C = 80A  
25  
50  
75  
100  
125  
150  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
TJ - Degrees Centigrade  
IC - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXXH75N60B3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
120  
100  
80  
60  
40  
20  
0
46  
42  
38  
34  
30  
26  
22  
240  
200  
160  
120  
80  
140  
120  
100  
80  
tr i  
td(on) - - - -  
t r i  
td(on) - - - -  
, VGE = 15V  
TJ = 25ºC  
150ºC  
I C = 40A  
TJ = 150ºC, VGE = 15V  
RG = 5  
Ω
VCE = 400V  
VCE = 400V  
TJ = 150ºC, 25ºC  
I C = 80A  
60  
40  
40  
0
20  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
46  
44  
42  
40  
38  
36  
34  
32  
30  
28  
t r i  
td(on) - - - -  
RG = 5  
, VGE = 15V  
Ω
VCE = 400V  
I C = 80A  
60  
40  
I C = 40A  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXX_75N60B3D1(71)05-03-11  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXXA50N60B3 [ Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-263AA, TO-263AA, 3 PIN ] 6 页

MMD

 		IXXAA1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXAA3 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXAB1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXAB3 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXBA1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXBA3 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXBB1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXBB3 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXCA1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.269370s