EZ-PD™ CCG3PA Datasheet
sensing the GPIO pin voltage with an ADC, the pin voltage
cannot exceed the VDDIO supply value.
Functional Overview
MCU Subsystem
Charger Detection
CPU
The two charger detection blocks connected to the two pairs of
DP/DM pins allow CCG3PA to detect conventional battery
chargers conforming to BC 1.2, and the following proprietary
charger specifications: Apple, Qualcomm’s QuickCharge 4.0,
and Samsung AFC.
The Cortex-M0 CPU in EZ-PD CCG3PA is part of the 32-bit MCU
subsystem, which is optimized for low-power operation with
extensive clock gating.
The CPU also includes a serial wire debug (SWD) interface,
which is a 2-wire form of JTAG. The debug configuration used for
EZ-PD CCG3PA has four break-point (address) comparators
and two watchpoint (data) comparators.
VBUS Overcurrent and Overvoltage Protection
The CCG3PA chip has an integrated hardware block for VBUS
overvoltage protection (OVP)/overcurrent protection (OCP) with
configurable thresholds and response times on the Type C port.
Flash
The EZ-PD CCG3PA device has a flash module with one bank
of 64-KB flash, a flash accelerator, tightly coupled to the CPU to
improve average access times from the flash block.
VBUS Short Protection
CCG3PA provides four VBUS short protection pins: CC1, CC2,
P2.2, and P2.3. These pins are protected from accidental shorts
to high-voltage VBUS. Accidental shorts may occur because the
CC1 and CC2 pins are placed next to the VBUS pins in the USB
Type-C connector. A Power Delivery controller without the
high-voltage VBUS short protection will be damaged in the event
of accidental shorts. When the protection circuit is triggered,
CCG3PA can handle up to 17 V forever and between 17 V to
22 VDC for 1000 hours on the OVT pins. When a VBUS short
event occurs on the CC pins, a temporary high-ringing voltage is
observed due to the RLC elements in the USB Type-C cable.
Without CCG3PA connected, this ringing voltage can be twice
(44 V) the maximum VBUS voltage (21.5 V). However, when
CCG3PA is connected, it is capable of clamping temporary
high-ringing voltage and protecting the CC pin using IEC ESD
protection diodes.
SROM
Asupervisory ROM that contains boot and configuration routines
is provided.
USB-PD Subsystem (SS)
The USB-PD subsystem provides the interface to the Type-C
USB port. This subsystem comprises a current sense amplifier,
a high-voltage regulator, OVP, OCP, and supply switch blocks.
This subsystem also includes all ESD required and supported on
the Type-C port.
USB-PD Physical Layer
The USB-PD Physical Layer consists of a transmitter and
receiver that communicate BMC-encoded data over the CC
channel based on the PD 3.0 standard. All communication is
half-duplex. The Physical Layer or PHY practices collision
avoidance to minimize communication errors on the channel.
Low-side Current Sense Amplifier (CSA)
The CCG3PA chip also has an integrated low-side current sense
amplifier that is capable of detecting current in the order of
100 mA across a 5 mΩ external resistor. It also supports
constant current mode of operation in power adapter application
as a provider.
The USB-PD block includes all termination resistors (RP and RD)
and their switches as required by the USB-PD spec. RP and RD
resistors are required to implement connection detection, plug
orientation detection, and for establishing USB DFP/UFP roles.
The RP resistor is implemented as a current source.
PFET Gate Drivers on VBUS Path
According to the USB Type-C spec, a Type-C controller such as
CCG3PA must present certain termination resistors depending
on its role in its unpowered state. The Sink role in a power bank
application requires RD resistors to be present on the CC pins
whereas the DFP role, as in a power adapter, requires both CC
lines to be open. To be flexible for such applications, CCG3PA
includes the resistors required in the unpowered state on
separate pads or pins. The dead battery RD resistors are
available on separate pads. The dead battery RD is implemented
as a bond option on parts for Power Bank applications. In these
parts, each CC pin is bonded out together with its corresponding
dead battery RD resistor. On part numbers for the DFP appli-
cation, the CC pins are not bonded with the dead battery RD.
CCG3PA has two integrated PFET gate drivers to drive external
PFETs on the VBUS provider and consumer path. The
VBUS_P_CTRL gate driver has an active pull-up, and thus can
drive high, low or High-Z.
The VBUS_C_CTRL gate driver can drive only low or high-Z,
thus requiring an external pull-up. These pins are VBUS
voltage-tolerant.
VBUS Discharge FETs
CCG3PA also has two integrated VBUS discharge FETs used to
discharge VBUS to meet the USB-PD specification timing on a
detach condition. VBUS Discharge FET on the provider side can
be used to accelerate the ramp down of VBUS to default 5V on
the secondary side.
ADC
The ADC is a low-footprint 8-bit SAR ADC that is available for
general-purpose A-D conversion applications in the chip. This
ADC can be accessed from all GPIOs and the DP/DM pins
through an on-chip analog mux. CCG3PAcontains two instances
of the ADC. The voltage reference for the ADCs is generated
either from the VDDD supply or from internal bandgap. When
Voltage (VBUS) Regulation
CCG3PA contains an integrated feedback control circuitry (for
AC/DC applications) for secondary side control with analog
regulation of the feedback/cathode pins to achieve the appro-
Document Number: 002-16951 Rev. *F
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