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IXXH75N60B3D1

型号：

IXXH75N60B3D1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

8 页

PDF大小：

187 K

下载PDF手册
XPTTM 600V IGBT  
GenX3TM w/ Diode  
VCES = 600V  
IC110 = 75A  
VCE(sat) ≤ 1.85V  
tfi(typ) = 125ns  
IXXH75N60B3D1  
Extreme Light Punch Through  
IGBT for 5-30 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
TJ = 25°C to 175°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
160  
75  
30  
A
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
300  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
30  
A
500  
mJ  
A
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5Ω  
ICM = 150  
(RBSOA)  
Clamped Inductive Load  
@VCE ≤ VCES  
z Optimized for 5-30kHz Switching  
z Square RBSOA  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
μs  
z Anti-Parallel Ultra Fast Diode  
z Avalanche Capability  
(SCSOA)  
RG = 22Ω, Non Repetitive  
PC  
TC = 25°C  
750  
W
z Short Circuit Capability  
z International Standard Package  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Advantages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z High Power Density  
z 175°C Rated  
z Extremely Rugged  
z Low Gate Drive Requirement  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z Motor Drives  
z SMPS  
5.5  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
25 μA  
3 mA  
TJ = 150°C  
TJ = 150°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
1.60  
2.00  
1.85  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100328B(01/13)  
IXXH75N60B3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXXH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
20  
32  
S
Cies  
Coes  
Cres  
3290  
195  
63  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg(on)  
Qge  
Qgc  
107  
30  
nC  
nC  
nC  
IC = 75A, VGE = 15V, VCE = 0.5 • VCES  
48  
td(on)  
tri  
Eon  
td(off)  
tfi  
35  
75  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 60A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
1.7  
118  
125  
1.5  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
160  
VCE = 400V, RG = 5Ω  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
2.1 mJ  
f
td(on)  
tri  
36  
72  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 150°C  
IC = 60A, VGE = 15V  
Eon  
td(off)  
tfi  
2.6  
145  
170  
2.2  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 400V, RG = 5Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ = 100°C  
4
A
ns  
ns  
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
100  
25  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
RthJC  
0.9 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXH75N60B3D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
VGE = 15V  
14V  
VGE = 15V  
140  
120  
100  
80  
13V  
12V  
14V  
13V  
11V  
10V  
12V  
60  
11V  
40  
9V  
10V  
9V  
20  
8V  
7V  
7V  
0
0
0
0
9
0.5  
1
1.5  
2
2.5  
3
3.5  
4.5  
15  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
140  
120  
100  
80  
VGE = 15V  
14V  
13V  
I C = 150A  
12V  
11V  
10V  
I C = 75A  
60  
40  
9V  
8V  
6V  
I C = 37.5A  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
120  
100  
80  
60  
40  
20  
0
8
7
6
5
4
3
2
1
TJ = 25ºC  
I C = 150A  
TJ = 150ºC  
25ºC  
- 40ºC  
75A  
37.5A  
4
5
6
7
8
9
10  
11  
12  
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXH75N60B3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 300V  
I C = 75A  
TJ = - 40ºC, 25ºC, 150ºC  
I G = 10mA  
6
4
2
0
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
160  
140  
120  
100  
80  
C
ies  
oes  
res  
C
C
60  
40  
TJ = 150ºC  
RG = 5  
Ω
20  
dv / dt < 10V / ns  
= 1 MHz  
f
0
10  
100  
200  
300  
400  
500  
600  
0
5
10  
15  
20  
25  
35  
3040
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aasss  
0.4  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH75N60B3D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
3.6  
3.2  
2.8  
2.4  
2
4.5  
5
4.5  
4
9
8
7
6
5
4
3
2
1
E
E
on - - - -  
E
E
off  
on - - - -  
4
off  
RG = 5  
VGE = 15V  
Ω ,  
TJ = 150ºC , VGE = 15V  
VCE = 400V  
3.5  
3
VCE = 400V  
TJ = 150ºC  
3.5  
3
2.5  
2
I C = 80A  
1.6  
1.2  
0.8  
0.4  
0
TJ = 25ºC  
2.5  
2
1.5  
1
I C = 40A  
1.5  
1
0.5  
0
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
6
5
4
3
2
1
0
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
500  
E
off  
E
on - - - -  
t f i  
t
d(off) - - - -  
450  
400  
350  
300  
250  
200  
150  
100  
50  
RG = 5  
VGE = 15V  
CE = 400V  
Ω ,  
TJ = 150ºC, GE = 15V  
V
V
CE = 400V  
V
I C = 80A  
I C = 40A  
I C = 40A  
I C = 80A  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
240  
220  
200  
180  
160  
140  
120  
100  
220  
200  
180  
160  
140  
120  
100  
80  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
tf i  
td(off)  
- - - -  
t f i  
td(off)  
- - - -  
RG = 5  
, VGE = 15V  
Ω
RG = 5  
,
VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
I C = 40A  
TJ = 150ºC  
TJ = 25ºC  
I C = 80A  
25  
50  
75  
100  
125  
150  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
TJ - Degrees Centigrade  
IC - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXH75N60B3D1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
120  
100  
80  
60  
40  
20  
0
46  
42  
38  
34  
30  
26  
22  
240  
200  
160  
120  
80  
140  
120  
100  
80  
tr i  
td(on) - - - -  
t r i  
td(on) - - - -  
, VGE = 15V  
TJ = 25ºC  
150ºC  
I C = 40A  
TJ = 150ºC, VGE = 15V  
RG = 5  
Ω
VCE = 400V  
VCE = 400V  
TJ = 150ºC, 25ºC  
I C = 80A  
60  
40  
40  
0
20  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
46  
44  
42  
40  
38  
36  
34  
32  
30  
28  
t r i  
td(on) - - - -  
RG = 5  
, VGE = 15V  
Ω
VCE = 400V  
I C = 80A  
60  
40  
I C = 40A  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH75N60B3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ = 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
IF= 60A  
IF= 30A  
IF= 15A  
600  
400  
200  
0
TVJ =150°C  
TVJ =100°C  
TVJ = 25°C  
0
A/μs  
1000  
0
1
2
3 V  
VF  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
-diF/dt  
Fig. 23. Peak Reverse Current IRM  
Versus -diF/dt  
Fig. 22. Reverse Recovery Charge Qr  
Versus -diF/dt  
Fig. 21. Forward Current IF Versus VF  
2.0  
90  
20  
1.00  
μs  
TVJ = 100°C  
TVJ = 100°C  
IF = 30A  
VR = 300V  
V
ns  
VFR  
15  
tfr  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
IF = 60A  
IF = 30A  
80  
VFR  
IF = 15A  
1.0  
10  
5
IRM  
70  
Qr  
0.5  
0.0  
60  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 25. Recovery Time trr Versus  
-diF/dt  
Fig. 26. Peak Forward Voltage VFR  
and tfr Versus diF/dt  
Fig. 24. Dynamic Parameters Qr, IRM  
Versus TVJ  
1
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient Thermal Resistance Junction to Case  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXX_75N60B3(71)05-03-11  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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