N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4310A
ISSUE 2 – MARCH 94
FEATURES
*
*
*
100 Volt VDS
RDS(on) = 0.5Ω
Spice m odel available
D
G
S
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
VDS
ID
100
0.9
1
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C
Pra ctica l Co n tin u o u s Dra in Cu rre n t a t
A
IDP
A
T
a m b=25°C
Pu ls e d Dra in Cu rre n t
IDM
12
± 20
A
V
Ga te S o u rce Vo lta g e
VGS
Po w e r Dis s ip a tio n a t Ta m b=25°C
Pra ctica l Po w e r Dis s ip a tio n at Ta m b=25°C*
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
850
m W
W
Pto tp
Tj:Ts tg
1.13
-55 to +150
°C
*The power which can be dissipated assum ing the device is m ounted in a typical m anner on a P.C.B.
with copper equal to 1 inch square m inim um
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. TYP.
MAX. UNIT CONDITIONS .
Dra in -S o u rce
BVDS S
100
V
ID=1m A, VGS=0V
Bre akd o w n Vo ltag e
Ga te-S o u rce
VGS (th )
1
3
V
ID=1m A, VDS= VGS
Th res h o ld Vo ltag e
Ga te-Bo d y Lea ka g e
IGS S
IDS S
20
n A
V
GS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e
Dra in Cu rre n t
10
100
VDS=100V, VGS=0
DS=80V, VGS=0V, T=125°C(2)
µA
µA
V
On -S ta te Dra in
Cu rre n t(1)
ID(o n )
9
A
VDS=25 V, VGS=10V
S ta tic Drain -S o u rce
On -S ta te Res is ta n ce
(1)
RDS (o n )
0.36
0.48
0.5
0.65
VGS=10V,ID=3A
VGS=5V, ID=1.5A
Ω
Ω
Fo rw a rd
g fs
600
m S
VDS=25V,ID=3A
Tra n s co n d u cta n ce
(1)(2)
3-393
