找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

HZU6.8Z

型号:

HZU6.8Z

描述:

硅外延平面齐纳二极管的浪涌吸收[ Silicon Epitaxial Planar Zener Diode for Surge Absorb ]

品牌:

HITACHI[ HITACHI SEMICONDUCTOR ]

页数:

6 页

PDF大小:

30 K

HZU6.8Z  
Silicon Epitaxial Planar Zener Diode for Surge Absorb  
ADE-208-777(Z)  
Rev 0  
Feb. 1999  
Features  
Low capacitance (C=25pF max) and can protect ESD of signal line.  
Ultra small Resin Package (URP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HZU6.8Z  
68Z  
URP  
Outline  
Cathode mark  
Mark  
1
2
68Z  
1. Cathode  
2. Anode  
HZU6.8Z  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Value  
200  
Unit  
mW  
°C  
*1  
Power dissipation  
Junction temperature  
Storage temperature  
Note 1. See Fig.2.  
Pd  
Tj  
150  
Tstg  
-55 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ Max Unit Test Condition  
Zener voltage  
Reverse current  
Capacitance  
VZ  
IR  
6.47  
7.00  
2
V
IZ = 5 mA, 40ms pulse  
µA  
pF  
VR =3.5V  
C
25  
30  
VR = 0V, f = 1 MHz  
IZ = 5 mA  
Dynamic resistance r d  
*2  
ESD-Capability  
20  
kV  
C =150pF, R = 330 , Both forward and  
reverse direction 10 pulse  
Notes 1. Failure criterion ; IR > 2 µA at VR = 3.5V.  
2
HZU6.8Z  
Main Characteristic  
10-2  
250  
200  
Polyimide board  
20hx15wx0.8t  
1.5  
-3  
10  
150  
100  
1.5  
unit: mm  
-4  
10  
10-5  
50  
0
10-6  
0
4
6
8
10  
2
0
50  
Ambient Temperature Ta ( C)  
200  
100  
150  
Zener Voltage Vz (V)  
°
Fig.2 Power Dissipation Vs. Ambient Temperature  
Fig.1 Zener current Vs. Zener voltage  
4
10  
PRSM  
t
Ta = 25°C  
nonrepetitive  
103  
102  
10  
1.0  
-4  
-3  
-2  
-1  
10-5  
10  
10  
10  
10  
1.0  
Time  
t
(s)  
Fig.3 Surge Reverse Power Ratings  
3
HZU6.8Z  
Main Characteristic  
4
10  
103  
102  
10  
1.0  
103  
-1  
10-2  
10  
1.0  
10  
102  
Time t (s)  
Fig.4 Transient Thermal Impedance  
4
HZU6.8Z  
Package Dimensions  
Unit : mm  
Cathode Mark  
68Z  
2
1
1.7±0.15  
2.5±0.15  
1. Cathode  
2. Anode  
Hitachi Code  
JEDECCode  
EIAJCode  
URP  
Weight(g)  
0.004  
5
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  
厂商 型号 描述 页数 下载

RENESAS

HZU-G 硅平面齐纳二极管的浪涌吸收[ Silicon Planar Zener Diode for Surge Absorption ] 5 页

RENESAS

HZU-L 硅平面齐纳二极管的低噪声应用[ Silicon Planar Zener Diode for Low Noise Application ] 6 页

RENESAS

HZU-LL 硅外延平面齐纳二极管的硬拐点低噪声[ Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise ] 7 页

ETC

HZU-LLSERIES [ ] 5 页

RENESAS

HZU10 硅外延平面稳压二极管的稳定器[ Silicon Epitaxial Planar Zener Diodes for Stabilizer ] 11 页

RENESAS

HZU10B 硅外延平面稳压二极管的稳定器[ Silicon Epitaxial Planar Zener Diodes for Stabilizer ] 11 页

HITACHI

HZU10B [ Zener Diode, 10V V(Z), 5.5%, 0.2W, Silicon, Unidirectional, URP, 2 PIN ] 8 页

RENESAS

HZU10B1 硅外延平面稳压二极管的稳定器[ Silicon Epitaxial Planar Zener Diodes for Stabilizer ] 11 页

HITACHI

HZU10B1 [ Zener Diode, 9.66V V(Z), 2.17%, 0.2W, Silicon, Unidirectional, URP, 2 PIN ] 8 页

RENESAS

HZU10B1TLF [ 9.66V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ] 11 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.180964s