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SZNUF6401MNWT1G

型号:

SZNUF6401MNWT1G

品牌:

ONSEMI[ ONSEMI ]

页数:

9 页

PDF大小:

166 K

NUF6401  
6-Channel EMI Filter with  
Integrated ESD Protection  
The NUF6401MN is a sixchannel (CRC) Pistyle EMI filter  
array with integrated ESD protection. Its typical component values of  
R = 100 and C = 17 pF deliver a cutoff frequency of 110 MHz and  
stop band attenuation greater than 30 dB from 800 MHz to 3.0 GHz.  
This performance makes the part ideal for parallel interfaces with  
data rates up to 74 Mbps in applications where wireless interference  
must be minimized. The specified attenuation range is very effective  
in minimizing interference from 2G/3G, GPS, Bluetooth® and  
WLAN signals.  
www.onsemi.com  
MARKING  
DIAGRAMS  
1
12  
64  
01  
MG  
G
DFN12  
The NUF6401MN is available in lowprofile 12lead 1.35 mm x  
3.0 mm DFN12/DFNW12 surface mount packages.  
CASE 506AD  
1
Features/Benefits  
15 kV ESD Protection on each channel (IEC6100042 Contact  
Discharge)  
6401= Specific Device Code  
M
= Month  
G
= PbFree Package  
R/C Values of 100 and 17 pF deliver Exceptional S21 Performance  
(Note: Microdot may be in either location)  
1
Characteristics of 110 MHz f  
from 800 MHz to 3.0 GHz  
and 30 dB Stop Band Attenuation  
3dB  
Integrated EMI/ESD System Solution in DFN/DFNW Packages  
Offer Exceptional Cost, System Reliability and Space Savings  
SZNUF6401MNWT1G Wettable Flank Package for optimal  
Automated Optical Inspection (AOI)  
XX  
XX  
12  
DFNW12  
CASE 507AY  
MG  
1
G
S & SZ Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
XXXX = Specific Device Code  
M
= Date Code  
G
= PbFree Package  
(Note: Microdot may be in either location)  
Applications  
ORDERING INFORMATION  
EMI Filtering for LCD and Camera Data Lines  
EMI Filtering and Protection for I/O Ports and Keypads  
Device  
Package  
Shipping  
NUF6401MNT1G  
DFN12  
(PbFree)  
3000 / Tape &  
Reel  
SNUF6401MNT1G  
DFN12  
(PbFree)  
3000 / Tape &  
Reel  
SZNUF6401MNWT1G DFNW12 3000 / Tape &  
(In Development)  
(PbFree)  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
June, 2019 Rev. 3  
NUF6401/D  
NUF6401  
0
5  
10  
15  
20  
25  
30  
R = 100 ꢀ  
C = 17 pF C = 17 pF  
Filter + ESD  
Filter + ESD  
n
n
35  
40  
d
d
45  
1.0E+6  
10E+6  
100E+6  
1.0E+9  
10E+9  
See Table 1 for pin description  
FREQUENCY (Hz)  
Figure 1. Electrical Schematic  
Figure 2. Typical Insertion Loss Characteristic  
1
2
3
4
5
6
GND  
12  
11  
10  
9
8
7
(Bottom View)  
Figure 3. Pin Diagram  
Table 1. FUNCTIONAL PIN DESCRIPTION  
Filter  
Filter 1  
Device Pins  
1 & 12  
2 & 11  
3 & 10  
4 & 9  
Description  
Filter + ESD Channel 1  
Filter + ESD Channel 2  
Filter + ESD Channel 3  
Filter + ESD Channel 4  
Filter + ESD Channel 4  
Filter + ESD Channel 4  
Ground  
Filter 2  
Filter 3  
Filter 4  
Filter 5  
5 & 8  
Filter 6  
6 & 7  
Ground Pad  
GND  
www.onsemi.com  
2
NUF6401  
MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
15  
Unit  
kV  
ESD Discharge IEC6100042  
DC Power per Resistor  
Contact Discharge  
V
PP  
P
100  
mW  
mW  
°C  
R
DC Power per Package  
P
600  
T
Operating Temperature Range  
Storage Temperature Range  
T
OP  
40 to 105  
55 to 150  
260  
T
STG  
°C  
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)  
T
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Maximum Reverse Working Voltage  
Breakdown Voltage  
Symbol  
Test Conditions  
Min  
6.0  
85  
Typ  
Max  
Unit  
V
V
RWM  
5.0  
V
BR  
I
R
= 1.0 mA  
7.0  
100  
100  
17  
V
Leakage Current  
I
R
V
RWM  
= 3.0 V  
1000  
115  
20  
nA  
Resistance  
R
I = 10 mA  
R
A
Diode Capacitance  
C
C
V
V
= 2.5 V, f = 1.0 MHz  
= 2.5 V, f = 1.0 MHz  
pF  
pF  
MHz  
d
L
R
Line Capacitance  
34  
40  
R
3 dB CutOff Frequency (Note 1)  
f
Above this frequency,  
appreciable attenuation occurs  
110  
3dB  
6 dB CutOff Frequency (Note 1)  
f
Above this frequency,  
appreciable attenuation occurs  
175  
MHz  
6dB  
1. 50 source and 50 load termination.  
www.onsemi.com  
3
 
NUF6401  
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise specified)  
A
0
5  
0
10  
20  
30  
40  
50  
60  
70  
80  
10  
15  
20  
25  
30  
35  
40  
45  
1.0E+6  
10E+6  
100E+6  
1.0E+9  
10E+9  
10E+6  
100E+6  
1.0E+9  
10E+9  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Figure 4. Typical Insertion Loss Characteristic  
Figure 5. Typical Analog Crosstalk  
2
1.5  
1
110  
108  
106  
104  
102  
100  
98  
96  
0.5  
0
94  
92  
90  
40  
0
1
2
3
4
5
20  
0
20  
40  
60  
80  
TEMPERATURE (°C)  
REVERSE VOLTAGE (V)  
Figure 6. Typical Capacitance vs.  
Reverse Biased Voltage  
Figure 7. Typical Resistance over Temperature  
(Normalized Capacitance, Cd @ 2.5 V)  
www.onsemi.com  
4
NUF6401  
Theory of Operation  
approximation of a square wave, shown below in  
Equations 1 and 2 in the Fourier series approximation.  
From this it can be seen that a square wave consists of odd  
order harmonics and to fully construct a square wave n must  
go to infinity. However, to retain an acceptable portion of the  
waveform, the first two terms are generally sufficient. These  
two terms contain about 85% of the signal amplitude and  
allow a reasonable square wave to be reconstructed.  
Therefore, to reasonably pass a square wave of frequency x  
the minimum filter bandwidth necessary is 3x. All  
ON Semiconductor EMI filters are rated according to this  
principle. Attempting to violate this principle will result in  
significant rounding of the waveform and cause problems in  
transmitting the correct data. For example, take the filter  
with the response shown in Figure 8 and apply three  
different data waveforms. To calculate these three different  
frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be  
used.  
The NUF6401MN combines ESD protection and EMI  
filtering conveniently into a small package for today’s size  
constrained applications. The capacitance inherent to a  
typical protection diode is utilized to provide the  
capacitance value necessary to create the desired frequency  
response based upon the series resistance in the filter. By  
combining this functionality into one device, a large number  
of discrete components are integrated into one small  
package saving valuable board space and reducing BOM  
count and cost in the application.  
Application Example  
The accepted practice for specifying bandwidth in a filter  
is to use the 3 dB cutoff frequency. Utilizing points such as  
the 6 dB or 9 dB cutoff frequencies results in signal  
degradation in an application. This can be illustrated in an  
application example. A typical application would include  
EMI filtering of data lines in a camera or display interface.  
In such an example it is important to first understand the  
signal and its spectral content. By understanding these  
things, an appropriate filter can be selected for the desired  
application. A typical data signal is pattern of 1’s and 0’s  
transmitted over a line in a form similar to a square wave.  
The maximum frequency of such a signal would be the  
pattern 1-0-1-0 such that for a signal with a data rate of  
100 Mbps, the maximum frequency component would be  
50 MHz. The next item to consider is the spectral content of  
the signal, which can be understood with the Fourier series  
Equation 1:  
a
1
2
2
1
ƪ2n * 1  
ƫ
x(t) +  
)
sin((2n * 1)0t)  
(eq. 1)  
n+ 1  
Equation 2 (simplified form of Equation 1):  
sin(0t) sin(30t) sin(50t)  
1
2
2
ƪ
) AAAƫ(eq. 2)  
x(t) +  
)
)
)
1
3
5
3 dB  
6 dB  
9 dB  
f
1
f
2
f
3
100k  
1M  
10M  
100M  
1G  
10G  
Frequency (Hz)  
Figure 8. Filter Bandwidth  
From the above paragraphs it is shown that the maximum  
supported frequency of a waveform that can be passed  
through the filter can be found by dividing the bandwidth by  
a factor of three (to obtain the corresponding data rate  
multiply the result by two). The following table gives the  
bandwidth values and the corresponding maximum  
supported frequencies and the third harmonic frequencies.  
www.onsemi.com  
5
 
NUF6401  
with a frequency of 66.67 MHz is input to this same filter,  
Table 2. Frequency Chart  
the third harmonic term is significantly attenuated. This  
serves to round the signal edges and skew the waveform, as  
is shown in Figure 9b. In the case that a 100 MHz signal is  
input to this filter, the third harmonic term is attenuated even  
further and results in even more rounding of the signal edges  
as is shown in Figure 9c. The result is the degradation of the  
data being transmitted making the digital data (1’s and 0’s)  
more difficult to discern. This does not include effects of  
other components such as interconnect and other path losses  
which could further serve to degrade the signal integrity.  
While some filter products may specify the 6 dB or 9 dB  
bandwidths, actually using these to calculate supported  
frequencies (and corresponding data rates) results in  
significant signal degradation. To ensure the best signal  
integrity possible, it is best to use the 3 dB bandwidth to  
calculate the achievable data rate.  
Bandwidth  
Maximum Supported  
Frequency  
Third Harmonic  
Frequency  
3 dB –  
100 MHz  
33.33 MHz (f )  
100 MHz  
200 MHz  
300 MHz  
1
6 dB –  
200 MHz  
66.67 MHz (f )  
2
9 dB –  
300 MHz  
100 MHz (f )  
3
Considering that 85% of the amplitude of the square is in  
the first two terms of the Fourier series approximation most  
of the signal content is at the fundamental (maximum  
supported) frequency and the third harmonic frequency. If a  
signal with a frequency of 33.33 MHz is input to this filter,  
the first two terms are sufficiently passed such that the signal  
is only mildly affected, as is shown in Figure 9a. If a signal  
Input Waveform  
Output Waveform  
a) Frequency = f1  
Input Waveform  
Output Waveform  
b) Frequency = f2  
Input Waveform  
Output Waveform  
c) Frequency = f3  
Figure 9. Input and Output Waveforms of Filter  
www.onsemi.com  
6
 
NUF6401  
PACKAGE DIMENSIONS  
DFN12 3.0x1.35, 0.5P  
CASE 506AD  
2 X  
ISSUE J  
NOTES:  
0.15  
C
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
A
B
D
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION b APPLIES TO PLATED  
TERMINAL AND IS MEASURED BETWEEN  
0.25 AND 0.30 MM FROM TERMINAL.  
4. COPLANARITY APPLIES TO THE EXPOSED  
PAD AS WELL AS THE TERMINALS.  
5. EXPOSED PADS CONNECTED TO DIE FLAG.  
USED AS TEST CONTACTS.  
(A3)  
E
2 X  
MILLIMETERS  
0.15  
C
EXPOSED Cu  
TOP VIEW  
SIDE VIEW  
DIM MIN  
MAX  
1.00  
0.05  
A
A1  
A3  
b
D
D2  
E
E2  
e
K
L
0.80  
0.00  
PIN ONE  
REFERENCE  
0.20 REF  
(A3)  
0.18  
0.30  
3.00 BSC  
0.10  
0.08  
C
2.10  
2.30  
A
EDGE OF PACKAGE  
1.35 BSC  
SEATING  
PLANE  
0.20  
0.40  
C
12 X  
L
0.50 BSC  
0.20  
0.20  
0.00  
−−−  
0.40  
0.15  
A1  
C
L1  
L1  
D2  
e
DETAIL A  
12X  
L
DETAIL A  
EXPOSED PAD  
SOLDERING FOOTPRINT*  
1
6
OPTIONAL  
E2  
CONSTRUCTION  
0.479  
0.019  
2X  
0.2 X 0.25 MM  
NOTE 5  
0.265  
0.010  
12  
7
12X  
K
b
12X  
0.10  
C
C
A B  
NOTE 3  
0.05  
BOTTOM VIEW  
2.352  
0.093  
0.500  
0.020  
Pitch  
0.199  
0.008  
0.351  
0.014  
SCALE 16:1 ǒ  
mm  
inches  
Ǔ
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
7
NUF6401  
PACKAGE DIMENSIONS  
DFNW12 3.0x1.35, 0.5P  
CASE 507AY  
ISSUE O  
www.onsemi.com  
8
NUF6401  
Bluetooth is a registered trademark of Bluetooth SIG.  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
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PUBLICATION ORDERING INFORMATION  
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For additional information, please contact your local  
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NUF6401/D  
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