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8P016SRV2301I15

型号：

8P016SRV2301I15

品牌：

WEDC[ WHITE ELECTRONIC DESIGNS CORPORATION ]

页数：

10 页

PDF大小：

123 K

下载PDF手册
PCMCIA SRAM Memory Card  
SRV20 Series  
SRAM Memory Card 2MB through 16MB  
General Description  
Features  
• High Performance SRAM memory Card  
The WEDC SRAM Series (SRV20) memory cards  
offer a high performance nonvolatile storage solution  
for code and data storage, disk caching, and write  
intensive mobile and embedded applications.  
• Universal 3.3 to 5 Volt Supply allows for wider  
compatibility between systems.  
• Fast Access times: 150ns @ 3.3V – 5V  
• x8/x16 PCMCIA standard interface  
Packaged in PCMCIA type I or type II housing (type  
II for cards with extended battery backup time), the  
WEDC SRAM SRV20 series is based on high  
density and super low power SRAM memory  
devices, providing densities from 2MBytes to  
16MBytes.  
• Low Power CMOS technology provides very low  
power and reliable data retention characteristics  
- standby current < 100µA typical  
• Rechargeable Lithium battery with recharge circuitry  
- eliminates the need for replaceable batteries  
- standby current during recharge typically < 2mA  
- battery backup time  
• 18 months - type I card  
• 40 months - type II card  
The SRV20 series of SRAM memory cards has a  
universal wide power supply (3V to 5V) and operates  
at speeds as high as 150ns. The cards are based on  
advanced CMOS technology providing very low  
power and reliable data retention characteristics.  
WEDC’s SRAM cards contain a rechargeable  
lithium battery and recharge circuitry, eliminating the  
need for replaceable batteries found in many SRAM  
cards.  
typical based on 4MB  
• Unlimited write cycles, no endurance issues  
• Optional Features:  
• 2KB EEPROM attribute memory containing CIS  
• Optional Hardware Write Protect switch  
WEDC’s standard cards are shipped with WEDC’s  
SRAM Logo. Cards are also available with blank  
housings (no Logo). The blank housings are available  
in both a recessed (for label) and flat housing. Please  
contact WEDC sales representative for further  
information on Custom artwork.  
• PC Card Standard Type I or Type II Form Factor  
Block Diagram  
16MB SRAM Card Shown  
Address  
[A1..A21]  
buffer  
SRAM  
2M x 8  
SRAM  
2M x 8  
SRAM  
2M x 8  
SRAM  
2M x 8  
[A22..A23]  
/CSHi  
SRAM  
2M x 8  
SRAM  
2M x 8  
+
+
+ +  
+
decoder  
and  
/CSLi  
/CS-A  
CE1#  
CE2#  
WE#  
OE#  
REG#  
A0  
/CSHi  
SRAM  
2M x 8  
SRAM  
2M x 8  
logic  
control  
/RD  
/WR  
CTRL  
/RD  
/WR  
[A1..A11]  
/CS-A  
/RD  
/WR  
S1  
ATTRIBUTE  
MEMORY  
Vcc  
WP  
Write Prot  
Switch  
VS1  
VS2  
GND  
GND  
NC  
CTRL  
I/O BUFFER  
[DO..D7]  
[D8..D15]  
[DO..D7]  
[D8..D15]  
Notes: 1. pull down resistor (min 100k)  
2. pull up resistor (min 10k)  
Vcc  
+
Power Management  
and  
BVD1  
BVD2  
+
Battery Control  
to internal  
power  
supply  
Lithium Battery  
1
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
Pinout  
Pin Signal name I/O  
Function  
Ground  
Data bit 3  
Data bit 4  
Data bit 5  
Active  
Pin Signal name I/O  
Function  
Ground  
Active  
LOW  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1#  
A10  
OE#  
A11  
A9  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
GND  
CD1#  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2#  
VS1  
N.C.  
N.C.  
A17  
A18  
A19  
A20  
A21  
Vcc  
Vpp2  
A22  
A23  
A24  
A25  
I/O  
I/O  
I/O  
I/O  
I/O  
I
I
I
I
I
I
O
I/O  
I/O  
I/O  
I/O  
I
Card Detect 1  
Data bit 11  
Data bit 12  
Data bit 13  
Data bit 14  
Data bit 15  
Card Enable 2  
Data bit 6  
Data bit 7  
Card enable 1  
Address bit 10  
Output enable  
Address bit 11  
Address bit 9  
Address bit 8  
Address bit 13  
Address bit 14  
Write Enable  
Ready/Busy  
Supply Voltage  
Prog. Voltage  
Address bit 16  
Address bit 15  
Address bit 12  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
Address bit 1  
Address bit 0  
Data bit 0  
LOW  
LOW  
I
O
LOW  
Voltage Sense 1 GND (5)  
A8  
I
I
I
I
I
Address bit 17  
Address bit 18  
Address bit 19  
Address bit 20  
Address bit 21  
Supply Voltage  
Prog. Voltage  
Address bit 22  
A13  
A14  
WE#  
I
I
I
LOW  
N.C.  
2MB(2)  
4MB(2)  
16 RDY/BSY#  
O
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
Vcc  
Vpp1  
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
WP  
GND  
N.C.  
N.C.  
8MB(2)  
I
I
I
I
I
I
I
I
I
I
I
I/O  
I/O  
I/O  
O
Address bit 23 16MB(2,4)  
Address bit 24  
Address bit 25  
VS2  
O
O
Voltage Sense 2  
N.C.  
N.C.  
Wait#  
N.C.  
REG#  
BVD2  
BVD1  
DQ8  
DQ9  
DQ10  
CD2#  
GND  
Extended Bus Cycle Low  
I
O
O
I/O  
I/O  
O
Attrib Mem Select  
Bat. Volt. Detect 2  
Bat. Volt. Detect 1  
Data bit 8  
Low  
(3)  
Data bit 1  
Data bit 2  
Write Potect  
Ground  
Data bit 9  
Data bit 10  
Card Detect 2  
Ground  
HIGH  
O
LOW  
Notes:  
1. CD1# and CD2# are grounded internal to PC Card.  
2. Shows density for which specified address bit is MSB. Higher order address bits are no  
connects (ie 1MB A19 is MSB, A20 - A21 are NC).  
3. BVD1 is an open drain output with a 10K ohm internal pull-up resistor.  
4. The A23 Address line for 16MB capacities is also used for 12MB cards.  
5. VS1 is grounded and VS2 is open to indicate a 3.3V/5V card, with a 5V key, has been inserted.  
2
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
Mechanical  
Type I  
Interconnect area  
3.0mm MIN  
1.6mm ± 0.05  
(0.063”)  
10.0mm MIN  
(0.400”)  
1.0mm ± 0.05  
(0.039”)  
Substrate area  
54.0mm ± 0.10  
(2.126”)  
1.0mm ± 0.05  
(0.039”)  
85.6mm ± 0.20  
(3.370”)  
NOTE 1  
10.0mm MIN  
(0.400”)  
3.3mm ± T1 (0.130”)  
T1=0.10mm interconnect area  
T1=0.20mm substrate area  
Type II  
1.6mm ± 0.05  
0.063”  
85.6mm ± 0.20  
3.370”  
1.0mm ±0.05  
0.039’  
3.0mm  
MIN.  
Substrate area  
54.0mm ± 0.10  
2.126”  
1.0mm ±0.05  
0.039’  
NOTE 1  
10.0mm MIN  
0.400”  
Interconnect area  
NOTE 1:  
5.0mm ± T1  
0.197”  
this dimension (1mm) allows insertion  
to 5V and 3V sockets  
3
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
Card Signal Description  
Symbol  
A0 - A25  
Type  
INPUT  
Name and Function  
ADDRESS INPUTS: A0 through A25 enable direct addressing of up  
to 64MB of memory on the card. Signal A0 is not used in word access  
mode. A25 is the most significant bit. (address pins used are based on  
card density,see pinout for highest used address pin)  
DQ0 - DQ15  
CE1#, CE2#  
INPUT/OUT DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the  
PU T  
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte and  
DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.  
CARD ENABLE 1 AND 2: CE1#enables even byte accesses, CE2#  
enables odd byte accesses. Multiplexing A0, CE1#and CE2#allows 8-  
bit hosts to access all data on DQ0 - DQ7.  
INPUT  
OE#  
WE#  
INPUT  
INPUT  
OUTPUT ENABLE: Active low signal enabling read data from the  
memory card.  
WRITEENABLE: Active low signal gating write data to the memory  
card.  
RDY/BSY#  
CD1#, CD2#  
OU TPUT  
OU TPUT  
READY/BUSY OUTPUT: Not used for SRAM cards  
CARD DETECT 1 and 2: Provide card insertion detection. These  
signals are connected to ground internally on the memory card. The  
host socket interface circuitry shall supply 10K-ohm or larger pull-up  
resistors on these signal pins.  
WP  
OU TPUT  
N.C.  
WRITE PROTECT: Follows hardware Write Protect Switch. When  
Switch is placed in on position, signal is pulled high (10K ohm). When  
switch is off signal is pulled low.  
PROGRAM/ERASE POW ER SUPPLY: Not used for SRAM  
cards.  
VPP1, VPP2  
VCC  
GND  
REG#  
CARD POWER SUPPLY: 3.3V / 5.0V for all internal circuitry.  
GROUND: for all internal circuitry.  
ATTRIBUTE MEMORY SELECT : only used with cards built with  
optional attribute memory.  
INPUT  
RST  
INPUT  
RESET: Not used for SRAM cards  
WAIT#  
OU TPUT  
WAIT: This signal is pulled high internally for compatibility. No wait  
states are generated.  
BVD1, BVD2  
OU TPUT  
BATTERY VOLTAGE DETECT: Provides status of Battery  
voltage.  
BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data)  
BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required)  
BVD2 = BVD1 = Vol (data may no longer be valid, battery requires  
extended recharge)  
VS1, VS2  
OU TPUT  
V O LTA G E SENSE: Notifies the host socket of the card's VCC  
requirements. VS1 is grounded and VS2 is open to indicate a 3.3V/5V  
16 bit card, with a 5V key, has been inserted.  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD: pin may be driven  
or left floating  
RFU  
N.C.  
SRAM  
FUNCTIONAL TRUTH TABLE  
Common Memory  
Attribute Memory  
/REG D15-D8 D7-D0  
High-Z  
READ function  
Function Mode  
/CE2 /CE1 A0  
/OE /WE  
/REG D15-D8  
D7-D0  
High-Z  
Standby Mode  
Byte Access (8 bits)  
H
H
H
L
H
L
L
X
L
H
X
X
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
High-Z  
X
L
L
L
L
High-Z  
High-Z Even-Byte  
High-Z Odd-Byte  
Odd-Byte Even-Byte  
Odd-Byte High-Z  
High-Z Even-Byte  
High-Z Not Valid  
Not Valid Even-Byte  
Word Access (16 bits)  
Odd-Byte Only Access  
WRITE function  
L
L
H
Not Valid  
High-Z  
Standby Mode  
Byte Access (8 bits)  
H
H
H
H
L
L
X
L
H
X
H
H
X
L
L
X
H
H
X
X
X
X
X
L
L
X
X
X
X
Even-Byte  
X
Even-Byte  
Odd-Byte  
4
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
Absolute Maximum Ratings (2)  
Notes:  
(1) During transitions, inputs may undershoot to  
-2.0V or overshoot to VCC +2.0V for periods less  
than 20ns.  
Operating Temperature TA (ambient)  
Commercial  
0°C to +60 °C  
Industrial  
Storage Temperature  
Commercial  
Industrial  
Voltage on any pin relative to VSS  
VCC supply Voltage relative to VSS  
-40°C to +85 °C  
(2) Stress greater than those listed under  
“Absolute Maximum Ratings” may cause  
permanent damage to the device. This is a stress  
rating only and functional operation at these or  
any other conditions greater than those indicated  
in the operational sections of this specification is  
not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect  
reliability.  
0°C to +60 °C  
-40°C to +85 °C  
-0.5V to +5.5V (1)  
-0.5V to +7.0V  
DC Characteristics (1)  
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = 5V ± 0.2V  
Sym  
Parameter  
Density Notes  
Min  
Typ(3) Max Units Test Conditions  
ICC  
VCC Active Current  
2MB  
to  
1
25  
mA VCC = 5.25V  
tcycle = 150ns  
16MB  
ICCS  
ILI  
VCC Standby Current  
Input Leakage Current  
Output Leakage Current  
All  
All  
All  
2, 4  
< 0.1  
< 1  
10  
±20  
±20  
0.8  
mA VCC = 5.25V  
!
Control Signals = VCC  
VCC = VCCMAX  
Vin =VCC or VSS  
VCC = VCCMAX  
Vout =VCC or VSS  
5, 6  
6
µA  
µA  
ILO  
VIL  
VIH  
Input Low Voltage  
Input High Voltage  
All  
All  
6
6
0
V
V
3.85  
VCC  
+0.5  
0.4  
VOL  
VOH  
Output Low Voltage  
Output High Voltage  
All  
All  
6
6
V
V
IOL = 3.2mA  
IOH = -2.0mA  
VCC-0.4  
VCC  
Notes:  
1. All currents are for x16 mode and are RMS values unless otherwise specified.  
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.  
3. Typical: VCC = 5V, T = +25C.  
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully  
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully  
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.  
5. Values are the same for byte and word wide modes for all card densities.  
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to  
internal pull-up resistors.  
Battery Characteristics  
SRV21-24  
Parameter  
Battery Life  
Card  
Density  
All  
2MB  
4MB  
Notes  
(1)  
(2)  
Type I  
min 10  
18  
Type II  
min 10  
40  
Units  
years  
Conditions  
Normal operation, T=25C  
Battery backup time is a  
calculated value and is not  
guaranteed. This should not be  
used to schedule battery  
recharging. (Temp 25C)  
capacity  
18  
40  
months  
(typical)  
8MB  
12  
30  
25  
20  
12MB  
16MB  
10  
9
Notes:  
1. Battery Life refers to functional lifetime of battery.  
2. Battery backup time is density and temperature dependent.  
5
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
AC Characteristics  
Read Timing Parameters  
5.0V  
Min  
3.3V  
Min  
SYM  
Parameter  
Max  
Max  
Unit  
(PCMCIA)  
tRC  
Read Cycle Time  
150  
250  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ta(A)  
Address Access Time  
150  
150  
75  
250  
250  
125  
ta(CE)  
ta(OE)  
tsu(A)  
Card Enable Access Time  
Output Enable Access Time  
Address Setup Time  
20  
0
30  
0
tsu(CE)  
th(A)  
Card Enable Setup Time  
Address Hold Time  
20  
20  
0
20  
20  
0
th(CE)  
tv(A)  
Card Enable Hold Time  
Output Hold from Address Change  
Output Disable Time from CE#  
Output Disable Time from OE#  
Output Enable Time from CE#  
Output Enable Time from OE#  
tdis(CE)  
tdis(OE)  
tdis(CE)  
tdis(CE)  
75  
75  
100  
100  
5
5
5
5
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
Read Timing Diagram  
tc(R)  
th(A)  
ta(A)  
A[25::0], /REG  
/CE1, /CE2  
tv(A)  
ta(CE)  
tsu(CE)  
NOTE 1  
NOTE 1  
th(CE)  
ta(OE)  
tsu(A)  
tdis(CE)  
/OE  
tdis(OE)  
ten(OE)  
D[15::0]  
DATA VALID  
Note: Signal may be high or low in this area.  
6
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
Write Timing Parameters  
5.0V  
Min  
3.3V  
Min  
SYM  
Parameter  
Max  
Max  
Unit  
(PCMCIA)  
tCW  
Write Cycle Time  
150  
80  
250  
150  
30  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tw(WE)  
Write Pulse Width  
tsu(A)  
Address Setup Time  
20  
tsu(A-WEH)  
tsu(CE-WEH)  
tsu(D-WEH)  
th(D)  
Address Setup Time for WE#  
Card Enable Setup Time for WE#  
Data Setup Time for WE#  
Data Hold Time  
100  
100  
50  
180  
180  
80  
20  
30  
trec(WE)  
tdis(WE)  
tdis(OE)  
Write Recover Time  
20  
30  
Output Disable Time from WE#  
Output Disable Time from OE#  
Output Enable Time from WE#  
Output Enable Time from OE#  
Output Enable Setup from WE#  
Output Enable Hold from WE#  
Card Enable Setup Time from OE#  
Card Enable Hold Time  
75  
75  
100  
100  
ten(WE)  
5
5
5
5
tdis(OE)  
tsu(OE-WE)  
th(OE-WE)  
tsu(CE)  
10  
10  
0
10  
10  
0
th(CE)  
20  
20  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
Write Timing Diagram  
tc (W )  
A [2 5 ::0 ], /R E G  
ts u (A -W E H )  
tre c (W E )  
th (C E )  
ts u (C E -W E H )  
ts u (C E )  
/C E 1 , /C E 2  
N O T E  
1
N O T E  
1
/O E  
th (O E -W E )  
tw (W E )  
ts u (A )  
/W E  
th (D )  
ts u (O E -W E )  
ts u (D -W E H )  
D [1 5 ::0 ](D in )  
N O T E  
2
D A T A IN P U T  
td is (W E )  
td is (O E )  
te n (O E )  
te n (W E )  
N O T E  
2
D [1 5 ::0 ](D o u t)  
Notes:  
1. Signal may be high or low in this area.  
2. When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by the host  
system.  
7
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
PRODUCT MARKING  
WED8P016SRV2100C15 C995 9915  
EDI  
Date code  
Lot code / trace number  
Part number  
Company Name  
Note:  
Some products are currently marked with our pre-merger company name/acronym (EDI). During our  
transition period, some products will also be marked with our new company name/acronym (WED).  
Starting October 2001 all PCMCIA products will be marked only with the WED prefix.  
PART NUMBERING  
8P016SRV2100C15  
Card access time  
15  
150ns  
Temperature range  
C
I
Commercial 0°C to +70°C  
Industrial -40°C to +85°C  
Packaging option  
00  
Standard, type 1  
Card family and version  
- See Card Family and Version Info. for details (next page)  
Card capacity  
016  
16MB  
PC card  
P
Standard PCMCIA  
R
Ruggedized PCMCIA  
Card technology  
8
SRAM  
8
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
Ordering Information  
8P XXX SRV YY SS T ZZ  
where  
XXX:  
002  
004  
006  
008  
012  
016  
2MB  
4MB  
6MB  
8MB  
12MB  
16MB  
YY:  
SS:  
21  
22  
23  
24  
no attribute memory, no Write Protect Switch  
with attribute memory, no Write Protect Switch  
with Write Protect Switch, no attribute memory  
with attribute memory, with Write Protect Switch  
00  
01  
02  
03  
04  
05  
WEDC SRAM Logo Type I  
Blank Housing,  
Blank Housing,  
Type I  
Type I Recessed  
WEDC SRAM Logo, Type II  
(extended battery backup time)  
(extended battery backup time)  
Blank Housing,  
Blank Housing,  
Type II  
Type II Recessed (extended battery backup time)  
T:  
C
I
Commercial  
Industrial  
ZZ:  
15  
150ns  
9
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
PCMCIA SRAM Memory Card  
SRV20 Series  
REVISION HISTORY  
Date of revision  
9-May-01  
Version  
Description  
0
1
Initial release  
Final release  
6-Nov-01  
Filename: SRV20_Rev0.ppt  
White Electronic Designs Corporation  
One Research Drive, Westborough, MA 01581, USA  
tel: (508) 366 5151  
fax: (508) 836 4850  
www.whiteedc.com  
10  
November 2001 Rev. 1 - ECO #xxxx  
PC Card Products  
厂商 型号 描述 页数 下载

WEDC

 		8P001SRA0100C15 [ SRAM Card, 512KX16, 150ns, CMOS, CADR1-68 ] 10 页

WEDC

 		8P001SRA0100I15 [ SRAM Card, 512KX16, 150ns, CMOS, CADR1-68 ] 10 页

WEDC

 		8P001SRA0103C15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0104I15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0202C15 [ SRAM Card, 512KX16, 150ns, CMOS, CADR1-68 ] 10 页

WEDC

 		8P001SRA0202I15 [ SRAM Card, 512KX16, 150ns, CMOS, CADR1-68 ] 10 页

WEDC

 		8P001SRA0203C15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0203I15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0204C15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0204I15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

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