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HYS72V16300GU-7.5

型号:

HYS72V16300GU-7.5

描述:

X72 SDRAM模块\n[ x72 SDRAM Module ]

品牌:

ETC[ ETC ]

页数:

18 页

PDF大小:

184 K

3.3V 16M x 64/72-Bit 1 BANK SDRAM Module  
3.3V 32M x 64/72-Bit 2 BANK SDRAM Module  
HYS64/72V16300GU  
HYS64/72V32220GU  
168 pin unbuffered DIMM Modules  
168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications  
PC100 & PC133 versions  
1 bank 16M x 64, 16M x 72 and 2 bank 132M x 64, 32M x 72 organisation  
Optimized for byte-write non-parity (x64) or ECC (x72) applications  
JEDEC standard Synchronous DRAMs (SDRAM)  
Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification  
SDRAM Performance:  
-7.5  
PC133  
133  
-8  
Units  
PC100  
100  
fCK  
tAC  
Clock frequency (max.)  
Clock access time  
MHz  
ns  
5.4  
6
Programmed Latencies :  
Product Speed  
CL  
3
tRCD  
tRP  
3
-7.5  
-8  
PC133  
PC100  
3
2
2
2
Single +3.3V(± 0.3V ) power supply  
Programmable CAS Latency, Burst Length and Wrap Sequence  
(Sequential & Interleave)  
Auto Refresh (CBR) and Self Refresh  
Decoupling capacitors mounted on substrate  
All inputs, outputs are LVTTL compatible  
2
Serial Presence Detect with E PROM  
Utilizes 16M x 8 SDRAMs in TSOPII-54 packages with 4096 refresh cycles every 64 ms  
133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads  
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HYS64(72)V16300/32220GU  
SDRAM-Modules  
The HYS64(72)16300GU and HYS64(72)32220 are industry standard 168-pin 8-byte Dual in-line Memory  
Modules (DIMMs) which are organised as 16M x 64, 16M x 72 in one bank and 32M x 64 and 32M x 72 in two  
banks high speed memory arrays designed with 128M Synchronous DRAMs (SDRAMs) for non-parity and ECC  
applications. The DIMMs use -7.5 speed sorted 16M x 8 SDRAM devices in TSOP54 packages to meet the  
PC133-333 requirements and -8 & -8A components for the standard PC100 applications. Decoupling capacitors  
are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 module  
specification.The DIMMs have a serial presence detect, implemented with a serial E2PROM using the two pin I2C  
protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are available to the  
end user. All INFINEON 168-pin DIMMs provide a high performance, flexible 8-byte interface in a 133,35 mm long  
footprint, with 1,25“ ( 31,75 mm) height.  
Ordering Information  
Type  
Code  
Package  
Descriptions  
Module  
Height  
64MByte DIMMs:  
HYS 64V16300GU-7.5-...  
HYS 72V16300GU-7.5-...  
HYS 64V16300GU-8-...  
HYS 72V16300GU-8-...  
128 MByte DIMMs:  
HYS 64V32220GU-7.5-...  
HYS 64V32220GU-7.5-...  
HYS 64V32220GU-8-...  
HYS 72V32220GU-8-...  
PC133-333-520  
PC133-333-520  
PC100-222-620  
PC100-222-620  
L-DIM-168-33  
L-DIM-168-33  
L-DIM-168-33  
L-DIM-168-33  
133 Mhz 16M x 64 1 bank SDRAM module  
133 Mhz 16M x 72 1 bank SDRAM module  
100 MHz 16M x 64 1 bank SDRAM module  
100 MHz 16M x 72 1 bank SDRAM module  
1,25“  
1,25“  
1,25“  
1,25“  
PC133-333-520  
PC133-333-520  
PC100-222-620  
PC100-222-620  
L-DIM-168-30  
L-DIM-168-30  
L-DIM-168-30  
L-DIM-168-30  
133 MHz 32M x 64 2 bank SDRAM module  
133 Mhz 32M x 72 2 bank SDRAM module  
100 MHz 32M x 64 2 bank SDRAM module  
100 Mhz 32M x 72 2 bank SDRAM module  
1,25“  
1,25“  
1,25“  
1,25“  
Note: All partnumbers end with a place code (not shown), designating the die revision. Consult factory for current revision. Example:  
HYS64V16300GU-8-C, indicating Rev.C dies are used for SDRAM components.  
Pin Names  
A0-A11  
BA0, BA1  
DQ0 - DQ63  
CB0-CB7  
RAS  
Address Inputs  
WE  
CKE0, CKE1  
CLK0 - CLK3  
DQMB0 - DQMB7  
CS0 - CS3  
Vcc  
Read / Write Input  
Clock Enable  
Clock Input  
Vss  
SCL  
SDA  
N.C.  
Ground  
Bank Selects  
Clock for SPD  
Serial Data Out  
No Connection  
Data Input/Output  
Check Bits (x72 only)  
Row Address Strobe  
Column Address Strobe  
Data Mask  
Chip Select  
CAS  
Power (+3.3 Volt)  
Address Format:  
Part Number  
Rows  
12  
Columns Bank Select  
Refresh  
Period  
Interval  
15,6 µs  
15,6 µs  
15,6 µs  
15,6 µs  
16M x 64  
16M x 72  
32M x 64  
32M x 72  
HYS 64V16300GU  
HYS 72V16300GU  
HYS 64V32220GU  
HYS 72V32220GU  
10  
10  
10  
10  
2
2
2
2
4k  
4k  
4k  
4k  
64 ms  
64 ms  
64 ms  
64 ms  
12  
12  
12  
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SDRAM-Modules  
Pin Configuration  
PIN #  
Symbol  
PIN #  
Symbol  
PIN #  
Symbol  
PIN #  
Symbol  
1
VSS  
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
DQ4  
DQ5  
DQ6  
DQ7  
DQ8  
VSS  
DQ9  
DQ10  
DQ11  
DQ12  
DQ13  
VCC  
DQ14  
DQ15  
NC (CB0)  
NC (CB1)  
VSS  
NC  
43  
VSS  
85  
VSS  
127  
VSS  
2
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
DU  
86  
DQ32  
DQ33  
DQ34  
DQ35  
VCC  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
139  
140  
141  
142  
143  
144  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
161  
162  
163  
164  
165  
166  
167  
168  
CKE0  
CS3  
3
CS2  
87  
4
DQMB2  
DQMB3  
DU  
88  
DQMB6  
DQMB7  
NC  
5
89  
6
90  
7
VCC  
91  
DQ36  
DQ37  
DQ38  
DQ39  
DQ40  
VSS  
VCC  
NC  
8
NC  
92  
9
NC  
93  
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
NC (CB2)  
NC (CB3)  
VSS  
94  
CB6  
95  
CB7  
96  
VSS  
DQ16  
DQ17  
DQ18  
DQ19  
VCC  
97  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
VCC  
DQ48  
DQ49  
DQ50  
DQ51  
VCC  
DQ52  
NC  
98  
99  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
121  
122  
123  
124  
125  
126  
DQ20  
NC  
DQ46  
DQ47  
NC (CB4)  
NC (CB5)  
VSS  
DU  
DU  
CKE1  
VSS  
NC  
VSS  
DQ21  
DQ22  
DQ23  
VSS  
DQ53  
DQ54  
DQ55  
VSS  
NC  
NC  
NC  
VCC  
WE  
VCC  
DQ24  
DQ25  
DQ26  
DQ27  
VCC  
CAS  
DQ56  
DQ57  
DQ58  
DQ59  
VCC  
DQ60  
DQ61  
DQ62  
DQ63  
VSS  
DQMB0  
DQMB1  
CS0  
DQMB4  
DQMB5  
CS1  
DU  
RAS  
VSS  
A0  
DQ28  
DQ29  
DQ30  
DQ31  
VSS  
VSS  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
CLK2  
NC  
A9  
CLK3  
NC  
A10  
BA0  
BA1  
WP  
A11  
SA0  
VCC  
VCC  
CLK0  
SDA  
VCC  
SA1  
SCL  
CLK1  
NC  
SA2  
VCC  
VCC  
Note : Pinnames in brackets are for the x72 ECC versions  
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SDRAM-Modules  
WE  
CS0  
CS  
DQM  
WE  
CS  
DQM  
WE  
DQMB0  
DQ(7:0)  
DQMB4  
DQ0-DQ7  
DQ(39:32)  
DQ0-DQ7  
D0  
D4  
CS  
DQM  
WE  
CS  
DQM  
WE  
DQMB1  
DQMB5  
DQ(15:8)  
DQ0-DQ7  
DQ(47:40)  
DQ0-DQ7  
D1  
D5  
CS  
WE  
DQM  
CB(7:0)  
CS2  
DQ0-DQ7  
D8  
CS  
DQM  
WE  
CS  
DQM  
WE  
DQMB2  
DQMB6  
DQ(23:16)  
DQ0-DQ7  
DQ(55:48)  
DQ0-DQ7  
D2  
D6  
CS  
DQM  
WE  
CS  
DQM  
WE  
DQMB3  
DQMB7  
DQ(31:24)  
DQ0-DQ7  
DQ(63:56)  
DQ0-DQ7  
D3  
D7  
A0-A11, BA0, BA1  
VCC  
D0-D7, (D8)  
D0-D7, (D8)  
D0-D7, (D8)  
D0-D7, (D8)  
D0-D7, (D8)  
D0-D7, (D8)  
E2PROM (256 word x 8 Bit)  
SA0  
SA0  
SA1  
SA2  
SCL  
SA1  
SA2  
SCL  
SDA  
WP  
C0-C15, (C16, C17)  
VSS  
47 k  
RAS  
CAS  
CKE0  
Clock Wiring  
8 M x 64  
8 M x 72  
5 SDRAM  
CLK0  
4 SDRAM + 3.3 pF  
Termination  
CLK1  
CLK2  
CLK3  
Termination  
4 SDRAM + 3.3 pF  
Termination  
4 SDRAM + 3.3 pF  
Termination  
Note: D8 is only used in the x72 ECC version.  
SPB03958  
Block Diagram for 8M x 64/72 SDRAM DIMM modules (HYS64/72V82(3)00GU)  
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SDRAM-Modules  
CS1  
CS0  
CS  
CS  
CS  
CS  
DQMB0  
DQ(7:0)  
DQM  
DQM  
DQMB4  
DQM  
DQM  
DQ0-DQ7  
DQ0-DQ7  
DQ(39:32)  
DQ0-DQ7  
DQ0-DQ7  
D0  
D1  
D8  
D9  
D4  
D5  
D12  
D13  
CS  
CS  
CS  
CS  
DQMB1  
DQM  
DQM  
DQMB5  
DQM  
DQM  
DQ(15:8)  
DQ0-DQ7  
DQ0-DQ7  
DQ(47:40)  
DQ0-DQ7  
DQ0-DQ7  
CS  
CS  
DQM  
DQM  
DQ0-DQ7  
CB(7:0)  
DQ0-DQ7  
D16  
D17  
CS3  
CS2  
CS  
CS  
CS  
CS  
DQMB2  
DQM  
DQM  
DQMB6  
DQM  
DQM  
DQ(23:16)  
DQ0-DQ7  
DQ0-DQ7  
DQ(55:48)  
DQ0-DQ7  
DQ0-DQ7  
D2  
D3  
D10  
D11  
D6  
D7  
D14  
D15  
CS  
CS  
CS  
CS  
DQMB3  
DQM  
DQM  
DQMB7  
DQM  
DQM  
DQ(31:24)  
DQ0-DQ7  
DQ0-DQ7  
DQ(63:56)  
DQ0-DQ7  
DQ0-DQ7  
A0-A11, BA0, BA1  
VDD  
D0-D15, (D16, D17)  
D0-D15, (D16, D17)  
D0-D7, (D8)  
E2PROM (256 Word x 8 Bit)  
SA0  
SA0  
SA1  
SA2  
SCL  
SA1  
SA2  
SCL  
SDA  
WP  
C0-C31, (C32...C35)  
VSS  
47 k  
RAS, CAS, WE  
CKE0  
D0-D15, (D16, D17)  
D0-D7, (D16)  
Clock Wiring  
16 M x 64  
VDD  
10 k  
16 M x 72  
5 SDRAM  
5 SDRAM  
4 SDRAM + 3.3 pF  
4 SDRAM + 3.3 pF  
CLK0  
4 SDRAM + 3.3 pF  
4 SDRAM + 3.3 pF  
4 SDRAM + 3.3 pF  
4 SDRAM + 3.3 pF  
CLK1  
CLK2  
CLK3  
CKE1  
D9-D15, (D17)  
SPB03769  
Note: D16 & D17 is only used in the x72 ECC version and all resistor values are 10 except otherwise noted.  
Block Diagram for 16M x 64/72 SDRAM DIMM modules (HYS64/72V1620GU)  
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HYS64(72)V16300/32220GU  
SDRAM-Modules  
DC Characteristics  
TA = 0 to 70 °C; VSS = 0 V; VDD,VDDQ = 3.3 V ± 0.3 V  
Parameter  
Symbol  
Limit Values  
Unit  
min.  
max.  
Vcc+0.3  
0.8  
Input high voltage  
VIH  
VIL  
2.0  
– 0.5  
2.4  
V
Input low voltage  
V
Output high voltage (IOUT = – 4.0 mA)  
Output low voltage (IOUT = 4.0 mA)  
VOH  
VOL  
II(L)  
V
0.4  
V
Input leakage current, any input  
– 40  
40  
µA  
(0 V < VIN < 3.6 V, all other inputs = 0 V)  
Output leakage current  
IO(L)  
– 40  
40  
µA  
(DQ is disabled, 0 V < VOUT < VCC)  
Capacitance  
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz  
Parameter  
Symbol  
Limit Values  
Unit  
max.  
max.  
max.  
max.  
16Mx64 16Mx72 32Mx64 32Mx72  
Input capacitance  
CI1  
65  
72  
105  
144  
pF  
(A0 to A11, BA0, BA1, RAS, CAS, WE)  
Input capacitance (CS0 -CS3, )  
Input capacitance (CLK0 - CLK3)  
Input capacitance (CKE0, CKE1)  
Input capacitance (DQMB0 - DQMB7)  
CI2  
CICL  
CI3  
CI4  
CIO  
32  
35  
65  
13  
10  
40  
38  
72  
13  
10  
32  
35  
65  
20  
15  
40  
38  
72  
20  
15  
pF  
pF  
pF  
pF  
pF  
Input / Output capacitance  
(DQ0-DQ63, CB0-CB7)  
Input Capacitance (SCL,SA0-2)  
Input/Output Capacitance  
C
C
8
8
8
8
pF  
pF  
sc  
10  
10  
10  
10  
sd  
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SDRAM-Modules  
o
Operating Currents per SDRAM component (T = 0 to 70 C, Vdd = 3.3V ± 0.3V 1)  
A
(Recommended Operating Conditions unless otherwise noted))  
Symb.  
Note  
Parameter & Test Condition  
OPERATING CURRENT  
-7.5  
-8  
max.  
trc=trcmin., tck=tckmin.  
ICC1  
130  
120  
mA  
1
Ouputs open, Burst Length = 4, CL=3  
All banks operated in random access,  
all banks operated in ping-pong manner  
to maximize gapless data access  
PRECHARGE STANDBY CURRENT in tck = min.  
Power Down Mode  
CS =VIH (min.), CKE<=Vil(max)  
ICC2P  
ICC2N  
1.5  
mA  
mA  
1
1
PRECHARGE STANDBY CURRENT in tck = min.  
Non-Power Down Mode  
CS = VIH (min.), CKE>=Vih(min)  
40  
50  
35  
45  
NO OPERATING CURRENT  
CKE>=VIH(min.)  
CKE<=VIL(max.)  
ICC3N  
ICC3P  
mA  
mA  
1
1
tck = min., CS = VIH(min),  
active state ( max. 4 banks)  
10  
BURST OPERATING CURRENT  
tck = min.,  
Read command cycling  
ICC4  
130  
180  
120  
170  
mA 1,2  
AUTO REFRESH CURRENT  
tck = min.,  
Auto Refresh command cycling  
ICC5  
ICC6  
1
mA  
mA  
SELF REFRESH CURRENT  
Self Refresh Mode, CKE=0.2V  
standard version  
1.5  
1
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SDRAM-Modules  
AC Characteristics 3)4)  
TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 1 ns  
Symbol  
Note  
Parameter  
Limit Values  
-7.5  
PC133-333  
Unit  
-8  
PC100-222  
min. max. min. max.  
Clock and Access Time  
Clock Cycle Time  
tCK  
fCK  
tAC  
CAS Latency = 3  
CAS Latency = 2  
System Frequency  
7.5  
10  
10  
10  
ns  
ns  
CAS Latency = 3  
CAS Latency = 2  
133  
100  
100 MHz  
100 MHz  
Clock Access Time  
4,5)  
CAS Latency = 3  
CAS Latency = 2  
5.4  
6
6
6
ns  
ns  
6)  
6)  
Clock High Pulse Width  
tCH  
tCL  
2.5  
2.5  
3
3
ns  
ns  
Clock Low Pulse Width  
Set and Hold Parameters  
Input Setup time  
7)  
7)  
8)  
9)  
tIS  
1.5  
0.8  
1
2
1
1
1
ns  
Input Hold Time  
tIH  
ns  
Power Down Mode Entry Time  
tSB  
tPDE  
CLK  
CLK  
Power Down Mode Exit Setup  
Time  
1
Mode Register Setup Time  
Transition time (rise and fall)  
tRCS  
tT  
2
1
2
1
CLK  
ns  
Common Parameters  
RAS to CAS delay  
Precharge Time  
tRCD  
tRP  
tRAS  
tRC  
tRRD  
tCCD  
20  
20  
20  
20  
50  
70  
16  
1
ns  
ns  
Active Command Period  
Cycle Time  
45  
100k  
100k ns  
67.5  
15  
ns  
Bank to Bank Delay Time  
ns  
CAS to CAS delay time (same  
bank)  
1
CLK  
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SDRAM-Modules  
Symbol  
Note  
Parameter  
Limit Values  
-7.5  
PC133-333  
Unit  
-8  
PC100-222  
min. max. min. max.  
Refresh Cycle  
Refresh Period (4096 cycles)  
Self Refresh Exit Time  
tREF  
1
64  
1
64  
ms  
10)  
tSREX  
CLK  
Read Cycle  
4)  
Data Out Hold Time  
tOH  
tLZ  
3
0
3
7
2
3
0
3
8
2
ns  
Data Out to Low Impedance  
Data Out to High Impedance  
ns  
11)  
tHZ  
ns  
DQM Data Out Disable Latency tDQZ  
CLK  
Write Cycle  
Data input to Precharge  
(write recovery)  
tWR  
2
0
2
0
CLK  
CLK  
DQM Write Mask Latency  
tDQW  
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SDRAM-Modules  
Notes:  
1. These parameters depend on the cycle rate. These values are measured at 133 MHz for -7.5 and  
at 100 Mhz for -8 modules. Input signals are changed once during tck, excepts for ICC6 and for  
standby currents when tck=infinity. All values are shown per memory component.  
2. These parameters are measured with continous data stream during read access and all DQ  
toggling. CL=3 and BL=4 assumed and the VDDQ current is excluded.  
3. All AC characteristics are shown on SDRAM component level.  
An initial pause of 100µs is required after power-up, then a Precharge All Banks command must  
be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can  
begin.  
4. AC timing tests have V = 0.4 V and V = 2.4 V with the timing referenced to the 1.4 V crossover  
il  
ih  
point. The transition time is measured between V and V . All AC measurements assume t =1ns  
ih  
il  
T
with the AC output load circuit show. Specified tac and toh parameters are measured with a 50  
pF only, without any resistive termination and with a input signal of 1V / ns edge rate between  
0.8V and 2.0 V.  
tCH  
2.4 V  
0.4 V  
CLOCK  
tT  
tCL  
tHOLD  
tSETUP  
INPUT  
1.4 V  
tAC  
tAC  
tLZ  
tOH  
I/O  
50 pF  
OUTPUT  
1.4 V  
tHZ  
Measurement conditions for  
tac and toh  
SPT03404  
5. If clock rising time is longer than 1ns, a time (t /2 -0.5) ns has to be added to this parameter.  
T
6. Rated at 1.5 V  
7. If t is longen than 1 ns, a time (t -1) ns has to be added to this parameter.  
T
T
8. Anytime the refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh  
commands must be given to “wake-up“ the device.  
9. Timing is asynchronous. if setup time is not met by rising edge of the clock then the CKE signal  
is assumed latched on the next cycle.  
10.Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after  
CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied  
once the Self Refresh Exit command is registered.  
11.Referenced to the time which the output achieves the open circuit condition, not to output voltage  
levels.  
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SDRAM-Modules  
SPD-Table for PC133 Modules:  
Byte#  
Description  
SPD Entry Value  
Hex  
16Mx64 16Mx72 32Mx64 32Mx72  
-7.5  
-7.5  
-7.5  
-7.5  
0
1
2
3
Number of SPD bytes  
Total bytes in Serial PD  
Memory Type  
128  
256  
80  
08  
04  
0C  
SDRAM  
12  
Number of Row Addresses  
(without BS bits)  
4
Number of Column Addres-  
ses(for 8Mx8 SDRAMs)  
10  
0A  
5
6
7
8
9
Number of DIMM Banks  
Module Data Width  
1 / 2  
64 / 72  
0
01  
02  
40  
48  
40  
48  
Module Data Width (cont’d)  
Module Interface Levels  
SDRAM Cycle Time at CL=3  
00  
01  
75  
54  
LVTTL  
7.5 ns  
5.4 ns  
10 SDRAM Access time from  
Clock at CL=3  
11 Dimm Config  
none / ECC  
00  
00  
02  
08  
00  
00  
02  
08  
12 Refresh Rate/Type  
Self-Refresh,  
80  
0 8  
15.6µs  
1 3 S D R A M w i d t h , P r i m a r y  
x 8  
14 Error Checking SDRAM data  
width  
n/a / x8  
15 Minimum clock delay for  
back-to-back random column  
address  
t
ccd = 1 CLK  
01  
16 Burst Length supported  
17 Number of SDRAM banks  
18 Supported CAS Latencies  
1, 2, 4 & 8  
4
0F  
04  
06  
CAS latency = 2  
& 3  
19 CS Latencies  
20 WE Latencies  
CS latency = 0  
01  
01  
00  
Write latency = 0  
21 SDRAM DIMM module  
attributes  
non buffered/non  
reg.  
22 SDRAM Device Attributes  
:General  
Vcc tol +/- 10%  
0E  
A0  
60  
FF  
FF  
14  
0F  
23 Min. Clock Cycle Time at  
CAS Latency = 2  
10.0 ns  
24 Max. data access time from  
Clock for CL=2  
6.0 ns  
25 Minimum Clock Cycle Time  
at CL = 1  
not supported  
not supported  
20 ns  
26 Maximum Data Access Time  
from Clock at CL=1  
27 Minimum Row Precharge  
Time  
28 Minimum Row Active to Row  
Active delay tRRD  
15 ns  
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SDRAM-Modules  
Byte#  
Description  
SPD Entry Value  
Hex  
16Mx64 16Mx72 32Mx64 32Mx72  
-7.5  
-7.5  
-7.5  
-7.5  
29 Minimum RAS to CAS delay  
tRCD  
20 ns  
45 ns  
14  
2D  
20  
30 Minimum RAS pulse width  
tRAS  
31 Module Bank Density (per  
bank)  
128 MByte  
32 SDRAM input setup time  
33 SDRAM input hold time  
34 SDRAM data input hold time  
1.5 ns  
0.8 ns  
1.5 ns  
0.8 ns  
15  
08  
15  
08  
35 SDRAM data input setup  
time  
62-61 Superset information (may  
be used in future)  
FF  
12  
62 SPD Revision  
Revision 1.2  
63 Checksum for bytes 0 - 62  
13  
25  
14  
26  
64- Manufacturers information  
125 (optional)  
XX  
XX  
XX  
XX  
(FFh if not used)  
126 Frequency Specification  
127 133 MHz support details  
128+ Unused storage locations  
64  
FF  
AF  
FF  
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SDRAM-Modules  
SPD-Table for PC100 Modules:  
Byte#  
Description  
SPD Entry Value  
Hex  
16Mx64 16Mx72 32Mx64 32Mx72  
-8  
-8  
-8  
-8  
0
1
2
3
Number of SPD bytes  
Total bytes in Serial PD  
Memory Type  
128  
256  
80  
08  
04  
0C  
SDRAM  
12  
Number of Row Addresses  
(without BS bits)  
4
Number of Column Addres-  
ses(for 8Mx8 SDRAMs)  
10  
0A  
5
6
7
8
9
Number of DIMM Banks  
Module Data Width  
1 / 2  
64 / 72  
0
01  
02  
40  
48  
40  
48  
Module Data Width (cont’d)  
Module Interface Levels  
SDRAM Cycle Time at CL=3  
00  
01  
A0  
60  
LVTTL  
10.0 ns  
6.0 ns  
10 SDRAM Access time from  
Clock at CL=3  
11 Dimm Config  
none / ECC  
00  
00  
02  
08  
00  
00  
02  
08  
12 Refresh Rate/Type  
Self-Refresh,  
80  
0 8  
15.6µs  
1 3 S D R A M w i d t h , P r i m a r y  
x 8  
14 Error Checking SDRAM data  
width  
n/a / x8  
15 Minimum clock delay for  
back-to-back random column  
address  
t
ccd = 1 CLK  
01  
16 Burst Length supported  
17 Number of SDRAM banks  
18 Supported CAS Latencies  
1, 2, 4 & 8  
4
0F  
04  
06  
CAS latency = 2  
& 3  
19 CS Latencies  
20 WE Latencies  
CS latency = 0  
01  
01  
00  
Write latency = 0  
21 SDRAM DIMM module  
attributes  
non buffered/non  
reg.  
22 SDRAM Device Attributes  
:General  
Vcc tol +/- 10%  
0E  
A0  
60  
FF  
FF  
14  
10  
23 Min. Clock Cycle Time at  
CAS Latency = 2  
10.0 ns  
24 Max. data access time from  
Clock for CL=2  
6.0 ns  
25 Minimum Clock Cycle Time  
at CL = 1  
not supported  
not supported  
20 ns  
26 Maximum Data Access Time  
from Clock at CL=1  
27 Minimum Row Precharge  
Time  
28 Minimum Row Active to Row  
Active delay tRRD  
16 ns  
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SDRAM-Modules  
Byte#  
Description  
SPD Entry Value  
Hex  
16Mx64 16Mx72 32Mx64 32Mx72  
-8  
-8  
-8  
-8  
29 Minimum RAS to CAS delay  
tRCD  
20 ns  
45 ns  
14  
2D  
20  
30 Minimum RAS pulse width  
tRAS  
31 Module Bank Density (per  
bank)  
128 MByte  
32 SDRAM input setup time  
33 SDRAM input hold time  
34 SDRAM data input hold time  
2 ns  
1 ns  
2 ns  
1 ns  
20  
10  
20  
10  
35 SDRAM data input setup  
time  
62-61 Superset information (may  
be used in future)  
FF  
12  
62 SPD Revision  
Revision 1.2  
100 MHz  
63 Checksum for bytes 0 - 62  
71  
83  
72  
84  
64- Manufacturers information  
125 (optional)  
XX  
XX  
XX  
XX  
(FFh if not used)  
126 Frequency Specification  
127 100 MHz support details  
128+ Unused storage locations  
64  
FF  
AF  
FF  
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SDRAM-Modules  
L-DIM-168-30  
SDRAM DIMM Module package  
HYS64/72V32220GU  
133.35  
127.35  
4
*)  
1
10  
11  
6.35  
40  
41  
6.35  
84  
1.27±  
0.1  
3
1.27  
42.18  
91 x 1.27 = 115.57  
124 125  
2
85 94  
95  
168  
*)  
R1.27+0.1  
3 min.  
2.26  
Detail of Contacts  
*) on ECC modules only  
1±  
0.05  
1.27  
GLD09159  
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SDRAM-Modules  
L-DIM-168-33  
SDRAM DIMM Module package  
HYS64/72V16300GU  
133,35  
127,35  
4,0 max.  
x)  
84  
1
10 11  
40 41  
42,18  
+ 0.1  
1,27  
-
66,68  
A
C
B
85  
94 95  
124 125  
168  
6,35  
6,35  
1,27  
1,0 + 0.5  
-
+
0,2 0,15  
-
2,0  
2,0  
Detail C  
Detail A  
Detail B  
DM168-33.WMF  
x) on ECC modules only  
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SDRAM-Modules  
Update Releases:  
June 1, 1999  
June 17, 1999  
August 3, 1999  
August 5, 1999  
August 23, 1999  
Sept.30, 1999  
Dec. 2, 1999  
Explanation for factory specific code in part numbers added  
Byte 22 for PC100 modules changed from 06 to 0E  
PC133 spec incorpoated  
SPD tables added  
Byte 126 changed to 64h for PC133 modules  
Some errors corrected, checksums added  
Some timing parameters adjusted according to INTELs PC133 specification  
-8A speedsort removed  
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