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MXSMLG26A

型号：

MXSMLG26A

品牌：

MICROSEMI[ Microsemi ]

页数：

12 页

PDF大小：

950 K

下载PDF手册
MSMLG5.0A – MSMLG170CAe3, MSMLJ5.0A – MSMLJ170CAe3 Surface  
Mount 3000 Watt Transient Voltage Suppressor  
1
Product Overview  
The MSMLG5.0A–MSMLG170CA and the MSMLJ5.0A–MSMLJ170CA series of high-reliability transient  
voltage suppressors (TVS) protect circuits from voltage spikes containing up to 3000 W (10/1000 μs  
model pulse). The SMLG gull-wing design in the DO-215AB package allows for visible solder connections.  
The SMLJ J-bend design in the DO-214AB package allows for greater PC board mounting density.  
Selections include unidirectional and bidirectional as well as RoHS-compliant versions. These are  
available with a variety of upscreening options for enhanced reliability. They protect against the  
secondary effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching  
environments and induced by RF radiation. Since their response time is virtually instantaneous, they can  
also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.  
For the latest information, visit our website www.microsemi.com.  
1.1  
Features  
The following are key features of the MSMLG5.0A through MSMLG170CAe3 and the MSMLJ5.0A  
through MSMLJ170CAe3 devices:  
High-reliability devices with fabrication and assembly lot traceability for all M prefix devices  
All devices are 100% surge tested  
3σ lot norm screening performed on standby current (ID) for all M prefix devices  
Available in both unidirectional and bidirectional versions  
Moisture classification is “Level 1” with no dry pack required per IPC/JEDEC J-STD-020B for all M  
prefix devices.  
Enhanced reliability screening options with M prefix are available in reference to MIL-PRF-19500.  
Refer to High Reliability Up-Screened Plastic Products Portfolio for more details on the screening  
options (see Part Nomenclature for all available options).  
RoHS compliant versions available  
Axial-lead equivalent packages for thru-hole mounting are available as M5KP5.0A to M5KP110CA  
with 5000 W rating (contact Microsemi for other surface mount options).  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
1
1.2  
Applications and Benefits  
The following are benefits of the MSMLG5.0A through MSMLG170CAe3 and the MSMLJ5.0A through  
MSMLJ170CAe3 devices.  
Suppresses transients up to 3000 W (10/1000 µs test pulse—see Figure 2 (see page 7))  
Protection from switching transients and induced RF  
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ω source impedance:  
Class 1 and 2: SML 5.0A to SML 170A or CA  
Class 3: SML 5.0A to SML 150A or CA  
Class 4: SML 5.0A to SML 75A or CA  
Secondary lightning protection per IEC 61000-4-5 with 12 Ω source impedance:  
Class 1: SML 5.0A to SML 170A or CA  
Class 2: SML 5.0A to SML 90A or CA  
Class 3: SML 5.0A to SML 48A or CA  
Class 4: SML 5.0A to SML 24A or CA  
Secondary lightning protection per IEC 61000-4-5 with 2 Ω source impedance:  
Class 2: SML 5.0A to SML 43A or CA  
Class 3: SML 5.0A to SML 22A or CA  
Class 4: SML 5.0A to SML10A or CA  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
2
1.3  
Part Nomenclature  
The following table lists the part nomenclature for the MSMLG5.0A through MSMLG170CAe3 and the  
MSMLJ5.0 through MSMLJ170CAe3 devices.  
Table 1 • MXSMLG5.0CAe3 Part Nomenclature  
MX  
Reliability level*  
M (controlled product)  
MA (aviconics grade) MX (reference JANTX)  
MXL (MX life)  
Blank = commercial  
*(see Hirel Non-Hermetic Product Portfolio)  
SM  
L
Surface-mount package  
3000 W power level  
G or J  
5.0  
Gull-wing or J-bend lead frame  
Reverse standoff voltage  
(see Typical Electrical Performance (see page 5)  
table)  
C
Uni/bidirectional  
C = Bidirectional  
Blank = Undirectional  
A
± 5% Tolerance level  
RoHS Compliance  
e3  
e3 = RoHS compliant  
Blank = non-RoHS compliant  
1.4  
Symbols and Definitions  
The following table lists the symbols and definitions used for the MSMLG5.0A through MSMLG170CAe3  
and the MSMLJ5.0 through MSMLJ170CAe3 devices.  
Table 2 • Symbols and Definitions  
Symbol  
I(BR)  
ID  
Value  
Definition  
Breakdown current  
Standby current  
The current used for measuring breakdown voltage V(BR).  
The current at the rated standoff voltage VWM.  
The forward current dc value, no alternating component.  
The peak current during the impulse.  
IF  
Forward current  
Peak impulse current  
Peak pulse Power  
Minimum breakdown voltage  
Clamping voltage  
IPP  
PPP  
V(BR)  
VC  
The peak power dissipation resulting from peak impulse current IPP.  
The minimum voltage the device will exhibit at a specified current.  
Clamping voltage at IPP (peak pulse current) at the specified pulse  
conditions (typically shown as maximum value).  
VWM  
Rated working standoff voltage  
The maximum peak voltage that can be applied over the operating  
temperature range.  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
3
2
Electrical Specifications  
This section shows the electrical specifications for the MSMLG5.0A–MSMLG170CA and the MSMLJ5.0A–  
MSMLJ170CA devices.  
2.1  
Maximum Ratings  
The following table shows you the absolute maximum ratings for the MSMLG5.0A–MSMLG170CA and  
the MSMLJ5.0A–MSMLJ170CA devices.  
Table 3 • Absolute Maximum Ratings  
Parameter/Test Conditions  
Symbol  
TJ and TSTG  
RθJL  
Value  
–65 to 150  
17.5  
Unit  
°C  
Junction and storage temperature  
Thermal resistance junction-to-lead  
Thermal resistance junction-to-ambient1  
°C/W  
RθJA  
77.5  
Peak pulse power dissipation at 25 °C  
(10/1000 μs, see Figures 1, 2, and 3).  
PPP  
3000  
W
%
Impulse repetition rate (duty factor)  
df  
0.01 or  
less  
tclamping (0 V to V(BR) min)  
Unidirectional  
Bidirectional  
TL = 45 °C  
tclamping  
<100  
<5  
ps  
ns  
W
Rated average power dissipation  
PM(AV)  
6
TL = 25 °C  
1.611  
200  
260  
Maximum forward surge current2  
Solder temperature at 10 s  
IFSM  
TSP  
A (pk)  
°C  
Notes:  
1. When mounted on FR4 PC board (1 oz Cu) with recommended mounting pad (see pad layout).  
2. Peak impulse of 8.3 ms half-sine wave at 25 °C (unidirectional only).  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
4
2.2  
Typical Electrical Performance  
The following table shows the Electrical characteristics for the MSMLG5.0A–MSMLG170CA and the  
MSMLJ5.05A–MSMLJ170CA devices at 25 °C unless otherwise specified.  
For bidirectional device types, indicate a CA suffix after the part number (i.e. MSMLG170CA).  
Table 4 • Typical Electrical Performance  
Part Number  
VWM  
VBR Breakdown  
Voltage at I(BR)  
IBR Test  
Current  
VC Max  
Clamping  
Voltage  
at IPP  
IPP Max  
Peak  
ID Max  
Reverse  
Standoff  
Voltage  
Stand-by  
Current  
at V WM  
Pulse  
Current  
Gull-wing  
J-bend  
(V)  
(V)  
(mA)  
(V)  
(A)  
(µA)  
SMLG5.0A  
SMLG6.0A  
SMLJ5.0A  
SMLJ6.0A  
5.0  
6.0  
6.40 – 7.00  
6.67 – 7.37  
10  
10  
9.2  
326.0  
291.3  
1000  
1000  
10.3  
SMLG6.5A  
SMLG7.0A  
SMLJ6.5A  
SMLJ7.0A  
6.5  
7.0  
7.22 – 7.98  
7.78 – 8.60  
10  
10  
11.2  
12.0  
267.9  
250.0  
500  
200  
SMLG7.5A  
SMLG8.0A  
SMLJ7.5A  
SMLJ8.0A  
7.5  
8.0  
8.33 – 9.21  
8.89 – 9.83  
1
1
12.9  
13.6  
232.6  
220.6  
100  
50  
SMLG8.5A  
SMLG9.0A  
SMLJ8.5A  
SMLJ9.0A  
8.5  
9.0  
9.44 – 10.4  
10.0 – 11.1  
1
1
14.4  
15.4  
208.4  
194.8  
25  
10  
SMLG10A  
SMLG11A  
SMLJ10A  
SMLJ11A  
10  
11  
11.1 – 12.3  
12.2 – 13.5  
1
1
17.0  
18.2  
176.4  
164.8  
5
5
SMLG12A  
SMLG13A  
SMLJ12A  
SMLJ13A  
12  
13  
13.3 – 14.7  
14.4 – 15.9  
1
1
19.9  
21.5  
150.6  
139.4  
5
5
SMLG14A  
SMLG15A  
SMLJ14A  
SMLJ15A  
14  
15  
15.6 – 17.2  
16.7 – 18.5  
1
1
23.2  
24.4  
129.4  
123.0  
2
2
SMLG16A  
SMLG17A  
SMLJ16A  
SMLJ17A  
16  
17  
17.8 – 19.7  
18.9 – 20.9  
1
1
26.0  
27.6  
115.4  
106.6  
2
2
SMLG18A  
SMLG20A  
SMLJ18A  
SMLJ20A  
18  
20  
20.0 – 22.1  
22.2 – 24.5  
1
1
29.2  
32.4  
102.8  
92.6  
2
2
SMLG22A  
SMLG24A  
SMLJ22A  
SMLJ24A  
22  
24  
24.4 – 26.9  
26.7 – 29.5  
1
1
35.5  
38.9  
84.4  
77.2  
2
2
SMLG26A  
SMLG28A  
SMLJ26A  
SMLJ28A  
26  
28  
28.9 – 31.9  
31.1 – 34.4  
1
1
42.1  
45.4  
71.2  
66.0  
2
2
SMLG30A  
SMLG33A  
SMLJ30A  
SMLJ33A  
30  
33  
33.3 – 36.8  
36.7 – 40.6  
1
1
48.4  
53.3  
62.0  
56.2  
2
2
SMLG36A  
SMLG40A  
SMLJ36A  
SMLJ40A  
36  
40  
40.0 – 44.2  
44.4 – 49.1  
1
1
58.1  
64.5  
51.6  
46.4  
2
2
SMLG43A  
SMLG45A  
SMLJ43A  
SMLJ45A  
43  
45  
47.8 – 52.8  
50.0 – 55.3  
1
1
69.4  
72.7  
43.2  
41.2  
2
2
SMLG48A  
SMLG51A  
SMLJ48A  
SMLJ51A  
48  
51  
53.3 – 58.9  
56.7 – 62.7  
1
1
77.4  
82.4  
38.8  
36.4  
2
2
SMLG54A  
SMLG58A  
SMLJ54A  
SMLJ58A  
54  
58  
60.0 – 66.3  
64.4 – 71.2  
1
1
87.1  
93.6  
34.4  
32.0  
2
2
SMLG60A  
SMLG64A  
SMLJ60A  
SMLJ64A  
60  
64  
66.7 – 73.7  
71.1 – 78.6  
1
1
96.8  
31.0  
29.2  
2
2
103.0  
SMLG70A  
SMLG75A  
SMLJ70A  
SMLJ75A  
70  
75  
77.8 – 86.0  
83.3 – 92.1  
1
1
113  
121  
26.6  
24.8  
2
2
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
5
 
Part Number  
VWM  
VBR Breakdown  
Voltage at I(BR)  
IBR Test  
Current  
VC Max  
Clamping  
Voltage  
at IPP  
IPP Max  
Peak  
ID Max  
Reverse  
Standoff  
Voltage  
Stand-by  
Current  
at V WM  
Pulse  
Current  
SMLG78A  
SMLG85A  
SMLJ78A  
SMLJ85A  
78  
85  
86.7 – 95.8  
1
1
126  
137  
22.8  
20.8  
2
2
94.4 – 104.0  
SMLG90A  
SMLJ90A  
90  
100 – 111  
111 – 123  
1
1
146  
162  
20.6  
18.6  
2
2
SMLG100A  
SMLJ100A  
100  
SMLG110A  
SMLG120A  
SMLJ110A  
SMLJ120A  
110  
120  
122 – 135  
133 – 147  
1
1
177  
193  
16.8  
15.6  
2
2
SMLG130A  
SMLG150A  
SMLJ130A  
SMLJ150A  
130  
150  
144 – 159  
167 – 185  
1
1
209  
243  
14.4  
12.4  
2
2
SMLG160A  
SMLG170A  
SMLJ160A  
SMLJ170A  
160  
170  
178 – 197  
189 – 209  
1
1
259  
275  
11.6  
11.0  
2
2
Bidirectional capacitance is half that shown in Figure 4 (see page 8) at 0 V.  
2.3  
Typical Performance Curves  
This section shows the typical performance curves of the MSMLG5.0A–MSMLG170CA and the  
MSMLJ5.0A–MSMLJ170CA devices.  
The following graph shows peak-pulse power versus pulse time (up to 50% of exponentially decaying  
pulse).  
Figure 1 • Peak Pulse Power vs. Pulse Time (to 50% of exponentially decaying pulse)  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
6
The following graph shows the pulse waveform with these parameters: tr = 10 µs and tp = 1000 µs.  
Figure 2 • Pulse Waveform  
The following graph shows the derating curve.  
Figure 3 • Derating Curve  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
7
 
The following graph shows the typical capacitance versus the breakdown voltage. Note that the  
bidirectional capacitance is half that shown at 0 V.  
Figure 4 • Typical Capacitance vs. Breakdown Voltage (Unidirectional Configuration)  
Note:  
Bidirectional capacitance is half that shown in Figure 4 at 0 V.  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
8
 
3
Package Specification  
The following sections shows the package specifications for the SMLG (DO-215AB) and SMLG (DO-  
214AB) packages.  
3.1  
Package Information  
The following illustration shows the SMLJ DO-214AB package dimensions. The typical standoff height is  
0.004 in—0.008 in (0.1—0.2 mm).  
Figure 5 • SMLG (DO-215AB) Package Dimensions  
The following table shows the SMLG DO-215AB mechanical and packaging information.  
Table 5 • SMLG (DO-215AB) Mechanical and Package Information  
Letter  
Dimensions (in.)  
0.115—0.121  
0.260—0.280  
0.220—0.245  
0.077—0.110  
0.380—0.400  
0.025—0.040  
Dimensions (mm)  
2.92—3.07  
A
B
C
E
6.60—7.11  
5.59—6.22  
1.95—2.80  
F1  
K
9.65—10.16  
0.635—1.016  
Note:  
1. Dimesion "E" exceeds the JEDEC outline as shown.  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
9
The following illustration shows the mechanical and packaging information for the SMLG (DO-214AB)  
package.  
Figure 6 • SMLJ_(DO-214AB)_Package_Dimensions  
The following table shows the SMLJ DO-214AB mechanical and packaging information.  
Table 6 • SMLJ (DO-214AB) Mechanical and Package Information  
Letter  
Dimensions (in.)  
0.115—0.121  
0.260—0.280  
0.220—0.245  
0.305—0.320  
0.077—0.110  
0.030—0.060  
Dimensions (mm)  
2.92—3.07  
A
B
C
D
E
L
6.60—7.11  
5.59—6.22  
7.75—8.13  
1.95—2.80  
0.760—1.52  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
10  
3.2  
Pad Layout  
The following illustration shows the pad layout for the SMLG (DO-215AB) and SMLJ (DO-214AB)  
packages.  
Figure 7 • Pad Layout  
The following table shows the SMLG DO-215AB pad layout dimensions.  
Table 7 • SMLG (DO-215AB) Pad Layout Dimensions  
Letter  
Dimensions (in.)  
0.510  
Dimensions (mm)  
A
B
C
12.95  
2.79  
3.81  
0.110  
0.150  
The following table shows the SMLJ DO-214AB pad layout dimensions.  
Table 8 • SMLJ (DO-214AB) Pad Layout Dimensions  
Letter  
Dimensions (in.)  
0.390  
Dimensions (mm)  
A
B
C
9.90  
2.79  
3.81  
0.110  
0.150  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
11  
Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services  
for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The  
products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with  
mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and  
complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data  
and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any  
products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the  
entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights,  
licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this  
document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products  
and services at any time without notice.  
Microsemi Headquarters  
One Enterprise, Aliso Viejo,  
CA 92656 USA  
Within the USA: +1 (800) 713-4113  
Outside the USA: +1 (949) 380-6100  
Sales: +1 (949) 380-6136  
Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system  
solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened  
analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time  
solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication  
solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design  
capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www  
microsemi.com.  
Fax: +1 (949) 215-4996  
Email: sales.support@microsemi.com  
www.microsemi.com  
© 2018 Microsemi. All rights reserved. Microsemi and the Microsemi logo  
are trademarks of Microsemi Corporation. All other trademarks and service  
marks are the property of their respective owners.  
RF01003  
Microsemi Proprietary and Confidential. MSMLG5.0A–MSMLG170CAe3, MSMLJ5.0A–MSMLJ170CAe3 Datasheet Revision D  
12  
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