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IXXP50N60B3

型号：

IXXP50N60B3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

282 K

下载PDF手册
XPTTM 600V IGBTs  
GenX3TM  
IXXA50N60B3  
IXXP50N60B3  
IXXH50N60B3  
VCES = 600V  
IC110 = 50A  
VCE(sat)  1.80V  
TO-263 (IXXA)  
Extreme Light Punch Through  
IGBT for 5-30 kHz Switching  
G
E
C (Tab)  
TO-220 (IXXP)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
TC = 25°C  
TC = 110°C  
120  
50  
A
A
TO-247 (IXXH)  
ICM  
TC = 25°C, 1ms  
200  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
A
200  
mJ  
G
C
E
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5  
Clamped Inductive Load  
ICM = 100  
A
μs  
W
C (Tab)  
(RBSOA)  
@VCE VCES  
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 22, Non Repetitive  
Features  
PC  
TC = 25°C  
600  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for 5-30kHz Switching  
Square RBSOA  
Avalanche Capability  
-55 ... +175  
Short Circuit Capability  
International Standard Packages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb.  
Nm/lb.in.  
Advantages  
High Power Density  
175°C Rated  
Extremely Rugged  
Low Gate Drive Requirement  
Easy to Parallel  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
600  
3.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
6.0  
25 A  
2 mA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.55  
1.80  
1.80  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100301C(8/13)  
IXXA50N60B3 IXXP50N60B3  
IXXH50N60B3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-220 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 36A, VCE = 10V, Note 1  
12  
19  
S
Cies  
Coes  
Cres  
2230  
195  
44  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
70  
16  
29  
nC  
nC  
nC  
IC = 36A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
27  
40  
ns  
Pins: 1 - Gate  
ns  
Inductive load, TJ = 25°C  
IC = 36A, VGE = 15V  
2 - Collector  
3 - Emitter  
0.67  
100  
135  
0.74  
mJ  
150  
ns  
ns  
VCE = 360V, RG = 5  
Note 2  
Eof  
1.20 mJ  
f
td(on)  
tri  
30  
45  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 36A, VGE = 15V  
Eon  
td(off)  
tfi  
1.40  
130  
190  
1.20  
mJ  
ns  
VCE = 360V, RG = 5  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.25 °C/W  
TO-247  
TO-220  
0.21  
0.50  
°C/W  
°C/W  
TO-247 Outline  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
1 - Gate  
2,4 - Collector  
3 - Emitter  
TO-263 Outline  
1 = Gate  
2,4 = Collector  
3 = Emitter  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXA50N60B3 IXXP50N60B3  
IXXH50N60B3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
VGE = 15V  
14V  
VGE = 15V  
70  
60  
50  
40  
30  
20  
10  
0
13V  
12V  
11V  
14V  
13V  
12V  
10V  
9V  
60  
11V  
40  
10V  
9V  
8V  
7V  
20  
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
15  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
14V  
70  
VGE = 15V  
13V  
60  
50  
40  
30  
20  
10  
0
I C = 72A  
12V  
11V  
10V  
I C = 36A  
9V  
8V  
I C = 18A  
7V  
6V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 72A  
36A  
18A  
TJ = 150ºC  
25ºC  
- 40ºC  
4
5
6
7
8
9
10  
11  
12  
13  
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXA50N60B3 IXXP50N60B3  
IXXH50N60B3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
32  
28  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
TJ = - 40ºC, 25ºC, 150ºC  
VCE = 300V  
I C = 36A  
G = 10mA  
I
6
4
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
10  
20  
30  
40  
50  
60  
70  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
res  
TJ = 150ºC  
RG = 5  
Ω
C
dv / dt < 10V / ns  
10  
100  
200  
500  
300400600  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
aaaasss  
1,000  
100  
10  
0.4  
VCE(sat) Limit  
0.1  
25µs  
100µs  
1
1ms  
TJ = 175ºC  
TC = 25ºC  
10ms  
Single Pulse  
DC  
0
0.01  
0.00001  
1
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXA50N60B3 IXXP50N60B3  
IXXH50N60B3  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
5
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
6
5
4
3
2
1
E
E
on - - - -  
E
E
on - - - -  
off  
off  
TJ = 150ºC , VGE = 15V  
CE = 360V  
TJ = 150ºC  
RG = 5  
VGE = 15V  
Ω  
4
3
2
1
0
VCE = 360V  
V
I C = 72A  
TJ = 25ºC  
I C = 36A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
IC - Amperes  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
2.2  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
240  
350  
300  
250  
200  
150  
100  
50  
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
220  
200  
180  
160  
140  
120  
100  
TJ = 150ºC, GE = 15V  
V
RG = 5 VGE = 15V  
Ω  
CE = 360V  
V
VCE = 360V  
I C = 72A  
I C = 36A  
I C = 72A  
I C = 36A  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
240  
220  
200  
180  
160  
140  
120  
100  
80  
150  
140  
130  
120  
110  
100  
90  
300  
270  
240  
210  
180  
150  
120  
90  
220  
tf i  
td(off)  
- - - -  
t f i  
td(off)  
- - - -  
200  
180  
160  
140  
120  
100  
80  
RG = 5  
, VGE = 15V  
Ω
RG = 5  
,
VGE = 15V  
Ω  
TJ = 150ºC  
VCE = 360V  
VCE = 360V  
I C = 36A  
TJ = 25ºC  
80  
I C = 72A  
70  
60  
60  
60  
60  
30  
40  
25  
50  
75  
100  
125  
150  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
TJ - Degrees Centigrade  
IC - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXXA50N60B3 IXXP50N60B3  
IXXH50N60B3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
240  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
44  
t r i  
t
d(on) - - - -  
t r i  
td(on)  
- - - -  
41  
38  
35  
32  
29  
26  
23  
20  
T = 150ºC, V = 15V  
J
GE  
R
G
= 5 , V = 15V  
Ω  
GE  
V
= 360V  
CE  
V
= 360V  
CE  
I
= 36A  
C
T = 150ºC  
J
I
= 72A  
C
60  
40  
T = 25ºC  
J
40  
20  
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
44  
41  
38  
35  
32  
29  
26  
23  
20  
t r i  
t
d(on) - - - -  
R
G
= 5 , V = 15V  
Ω  
GE  
V
= 360V  
CE  
I
I
= 72A  
C
60  
= 36A  
C
40  
20  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXX_50N60B3D1(5D)8-13-13-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

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