CYM8210BPM
2M x 16 Static RAM Module
structed using eight 512K x 8 SRAMs (CY62148) in SOJ pack-
ages mounted on an epoxy laminate board with pins.
Features
• High-density 32-megabit SRAM module
• Low active power
Writing to each byte is accomplished by enabling the appropri-
ate Chip Select (E0, E1, E2, E3) and write enable (WH or WL).
Data on the input/output pins (I/O) is written into the mem-
ory location specified on the address pins (A0 through A17).
— 5.3W (max.) at 25 ns
• SMD technology
Reading the device is accomplished by taking the appropriate
chip select (E0, E1, E2, E3) LOW while write enable (WE)
remains HIGH. Under these conditions, the contents of the
memory location specified on the address pins will appear on
the data input/output pins (I/O).
• TTL-compatible inputs and outputs
• Low profile
— Max. height of 0.725 in.
• Available in 80 pin SIMM Package
Functional Description
The data input/output pins stay at the high-impedance state
when write enable is LOW or the appropriate chip selects are
HIGH.
The CYM8210 is a high-performance 8-megabit static RAM
module organized as 2M words by 16 bits. This module is con-
The CYM8210 module is shipped as a 80 pin SIMM.
Logic Block Diagram
A
–A
17
0
18
G
WH
WL
E0
512K x 8
SRAM
512K x 8
SRAM
I/O – I/O
I/O – I/O
8 15
0
7
8
8
8
8
8
8
8
8
512K x 8
SRAM
512K x 8
SRAM
I/O – I/O
I/O – I/O
8
0
7
15
15
15
E1
E2
E3
512K x 8
SRAM
512K x 8
SRAM
I/O – I/O
I/O – I/O
0
7
8
512K x 8
SRAM
512K x 8
SRAM
I/O – I/O
I/O – I/O
8
0
7
8210 –1
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05008 Rev. **
Revised April 26, 2001
