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CYM1465AL

型号:

CYM1465AL

描述:

内存\n[ Memory ]

品牌:

CYPRESS[ CYPRESS ]

页数:

7 页

PDF大小:

168 K

65A  
CYM1465A  
512K x 8 PDIP Static RAM  
an automatic power-down feature that reduces power con-  
sumption by more than 99% when deselected.  
Features  
• 4.5V–5.5V operation  
Writing to the SRAM is accomplished when the chip select  
(CS) and write enable (WE) inputs are both LOW. Data on the  
eight input/output pins (I/O0 through I/O7) of the device is then  
written into the memory location specified on the address pins  
(A0 through A18). Reading from the device is accomplished by  
taking chip select (CE) and output enable (OE) LOW while  
write enable (WE) remains inactive or HIGH. Under these con-  
ditions, the contents of the memory location specified on the  
address pins (A0 through A18) will appear on the eight appro-  
priate data input/output pins (I/O0 through I/O7).The eight in-  
put/output pins (I/O0 through I/O7) are placed in a high imped-  
ance state when the device is deselected (CE HIGH), the  
outputs are disabled (OE HIGH), or during a write operation  
(CE LOW, and WE LOW).  
• CMOS SRAM for optimum speed and power  
• Low active power (165 mW max.)  
• Low standby power (L Version)—(110 µW max)  
• 2V data retention (L Version)  
• JEDEC-compatible pinout  
• 32-pin, 0.6-inch-wide DIP package  
• TTL-compatible inputs and outputs  
Functional Description  
The CYM1465A is a high-performance CMOS static RAM or-  
ganized as 512K words by 8 bits. Easy memory expansion is  
provided by an active LOW chip enable (CE), an active LOW  
Output Enable (OE), and three-state drivers. This device has  
The CYM1465A is available in a 32-pin 600-mil wide body  
PDIP package.  
Logic Block Diagram  
Pin Configuration  
DIP  
Top View  
1
2
3
4
32  
31  
30  
29  
A
18  
A
16  
A
14  
A
12  
V
CC  
S
A
15  
A
17  
WE  
5
6
7
8
9
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A
A
A
A
A
7
13  
8
I/O  
0
A
INPUT BUFFER  
6
A
A
5
9
11  
0
I/O  
I/O  
1
A
A
1
4
A
4
A
OE  
3
2
A
5
6
A
10  
10  
11  
12  
13  
14  
15  
16  
A
2
A
A
CE  
I/O  
I/O  
I/O  
I/O  
I/O  
1
A
512 x 256 x 8  
ARRAY  
7
12  
I/O  
3
I/O  
4
I/O  
5
A
A
0
7
A
14  
A
16  
A
17  
I/O  
I/O  
I/O  
0
1
2
6
5
4
3
GND  
I/O  
6
7
POWER  
DOWN  
COLUMN  
DECODER  
CE  
I/O  
WE  
OE  
Selection Guide  
CYM1465A-70  
CYM1465A-85  
Maximum Access Time (ns)  
70  
20  
20  
85  
20  
20  
Maximum Operating Current (mA)  
Maximum Standby Current (µA)  
Cypress Semiconductor Corporation  
Document #: 38-05269 Rev. **  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Revised March 15, 2002  
CYM1465A  
DC Input Voltage .............................................-0.5V to +7.0V  
Maximum Ratings  
(Above which the useful life may be impaired.)  
Operating Range  
Storage Temperature .................................55°C to +150°C  
Ambient  
Range  
Commercial  
Industrial  
Temperature  
0°C to +70°C  
40°C to +85°C  
VCC  
Ambient Temperature with  
Power Applied...............................................10°C to +85°C  
5V ± 10%  
5V ± 10%  
Supply Voltage to Ground Potential............... 0.5V to +7.0V  
DC Voltage Applied to Outputs  
in High Z State............................................... 0.5V to +7.0V  
Electrical Characteristics Over the Operating Range  
CYM1465A  
Parameter  
VOH  
VOL  
VIH  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage  
Input Load Current  
Output Leakage Current  
Test Conditions  
Min.  
2.4  
Max.  
Unit  
V
VCC = Min., IOH = 1.0 mA  
VCC = Min., IOL = 2.1 mA  
0.4  
V
2.2 VCC + 0.3  
V
VIL  
0.3  
1  
0.8  
+1  
+1  
20  
V
IIX  
GND < VI < VCC  
µA  
µA  
mA  
IOZ  
GND < VO < VCC, Output Disabled  
VCC = Max., IOUT = 0 mA, CS < VIL  
1  
ICC  
VCC Operating Supply  
Current  
ISB1  
ISB2  
Automatic CS Power-Down Max. VCC, CE > VIH,  
Current Min. Duty Cycle = 100%  
1.5  
20  
mA  
Automatic CS Power-Down Max. VCC, CE > VCC - 0.3V,  
Current VIN > VCC - 0.3V or VIN < 0.3V  
µA  
Capacitance[1]  
Parameter  
Description  
Test Conditions  
Max.  
Unit  
pF  
CIN  
Input Capacitance  
Output Capacitance  
TA = 25°C, f = 1 MHz,  
VCC = 5.0V  
8
COUT  
10  
pF  
AC Test Loads and Waveforms  
1.847 k  
1.847 kΩ  
ALL INPUT PULSES  
90%  
5V  
5V  
OUTPUT  
3.0V  
GND  
90%  
OUTPUT  
10%  
10%  
[2]  
1 kΩ  
1 kΩ  
C
5 pF  
L
< 10 ns  
<10 ns  
INCLUDING  
JIG AND  
SCOPE  
INCLUDING  
JIG AND  
SCOPE  
(b)  
(a)  
Equivalent to:  
THÉVENIN EQUIVALENT  
648Ω  
OUTPUT  
1.76V  
Notes:  
1. Tested on a sample basis.  
2. Test conditions assume signal transition times of 10 ns or less, timing reference levels of 1.5V, input levels of 0 to 3.0V, and output loading of the specified  
IOL/IOH and 100-pF load capacitance for 85-, 100-, 120-, and 150-ns speeds. CL = 30 pF for 70-ns speed.  
Document #: 38-05269 Rev. **  
Page 2 of 7  
CYM1465A  
Switching Characteristics Over the Operating Range[2]  
CYM1465A-70  
CYM1465A-85  
Parameter  
Description  
Min.  
Max.  
Min.  
Max.  
Unit  
READ CYCLE  
tRC  
Read Cycle Time  
70  
85  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
Address to Data Valid  
Data Hold from Address Change  
CE LOW to Data Valid  
OE LOW to Data Valid  
OE LOW to Low Z  
70  
85  
tOHA  
tACE  
10  
10  
70  
35  
85  
45  
tDOE  
tLZOE  
tHZOE  
tLZCS  
tHZCS  
tPU  
5
10  
0
5
10  
0
OE HIGH to High Z[3]  
25  
25  
70  
30  
30  
85  
CE LOW to Low Z  
CE HIGH to High Z[3]  
CE LOW to Power Down  
CE HIGH to Power Down  
tPD  
WRITE CYCLE[4]  
tWC  
Write Cycle Time  
70  
60  
60  
0
85  
75  
75  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tSCE  
CE LOW to Write End  
Address Set-Up to Write End  
Address Hold from Write End  
Address Set-Up to Write Start  
WE Pulse Width  
tAW  
tHA  
tSA  
0
0
tPWE  
tSD  
55  
30  
0
65  
35  
0
Data Set-Up to Write End  
Data Hold from Write End  
WE HIGH to Low Z  
tHD  
tLZWE  
tHZWE  
5
5
WE LOW to High Z[3]  
25  
30  
Data Retention Characteristics Over the Operating Range (L Version Only)  
Commercial  
Industrial  
Parameter  
VDR  
Description  
VCC for Retention Data  
Test Conditions  
Min. Max. Min. Max.  
Unit  
2
2
V
ICCDR3  
Data Retention Current  
No Input may exceed  
Vcc+0.3V  
VDR = 3.0V,  
CE > VCC 0.3V,  
VIN > VCC 0.3V or  
VIN < 0.3V  
20  
20  
µA  
ns  
ns  
[5]  
tCDR  
Chip Deselect to Data Retention Time  
Operation Recovery Time  
0
0
[5]  
tR  
tRC  
tRC  
Notes:  
3. CL = 5 pF as in part (b) of AC Test Loads and Waveforms. Transition is measured ±500 mV from steady-state voltage.  
4. The internal write time of the memory is defined by the overlap of CS LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can  
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.  
5. Guaranteed, not tested.  
Document #: 38-05269 Rev. **  
Page 3 of 7  
CYM1465A  
Data Retention Waveform  
DATA RETENTION MODE  
> 2V  
V
CC  
3.0V  
3.0V  
V
DR  
t
t
R
CDR  
V
DR  
V
IH  
V
IH  
CE  
Switching Waveforms  
Read Cycle No. 1[6,7]  
t
RC  
ADDRESS  
t
AA  
t
OHA  
DATA OUT  
PREVIOUS DATA VALID  
DATA VALID  
Read Cycle No. 2 [6,8]  
t
RC  
CE  
t
ACE  
OE  
t
HZOE  
t
DOE  
t
HZCE  
t
LZOE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA VALID  
DATA OUT  
t
LZCS  
Notes:  
6. WE is HIGH for read cycle.  
7. Device is continuously selected, CE= VIL  
.
8. Address valid prior to or coincident with CE transition LOW.  
Document #: 38-05269 Rev. **  
Page 4 of 7  
CYM1465A  
Switching Waveforms (continued)  
[4]  
(WE  
Write Cycle No. 1  
Controlled)  
t
WC  
ADDRESS  
t
SCE  
CE  
WE  
t
t
HA  
AW  
t
SA  
t
PWE  
t
t
HD  
SD  
DATA IN  
DATA VALID  
t
t
LZWE  
HZWE  
HIGH IMPEDANCE  
DATAOUT  
DATA UNDEFINED  
[4,9]  
Write Cycle No. 2 (CE Controlled)  
t
WC  
ADDRESS  
t
SA  
t
SCE  
CE  
t
t
HA  
AW  
t
PWE  
WE  
t
t
HD  
SD  
DATA IN  
DATA VALID  
t
HZWE  
HIGH IMPEDANCE  
DATA OUT  
DATA UNDEFINED  
Note:  
9. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.  
Truth Table  
Inputs  
CE  
H
L
WE  
X
OE  
X
Output  
High Z  
Mode  
Deselect/Power-Down  
Read Word  
H
L
Data Out  
Data In  
High Z  
L
L
X
Write Word  
L
H
H
Deselect  
Document #: 38-05269 Rev. **  
Page 5 of 7  
CYM1465A  
Ordering Information  
Speed  
Package  
Name  
Operating  
Range  
(ns)  
Ordering Code  
Package Type  
32-Pin DIP Module  
32-Pin DIP Module  
32-Pin DIP Module  
32-Pin DIP Module  
70  
CYM1465ALPD-70C  
CYM1465ALPD-70I  
CYM1465ALPD-85C  
CYM1465ALPD-85I  
P19  
P19  
P19  
P19  
Commercial  
70  
Industrial  
85  
Commercial  
Industrial  
85  
Package Diagram  
32-Lead (600-Mil) Molded DIP P19  
51-85018-*A  
Document #: 38-05269 Rev. **  
Page 6 of 7  
© Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize  
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.  
CYM1465A  
Revision History  
Document Title: CYM1465A 512K x 8 PDIP Static RAM  
Document Number: 38-05269  
ISSUE  
DATE  
ORIG. OF  
CHANGE  
REV.  
ECN NO.  
DESCRIPTION OF CHANGE  
**  
114171  
3/19/02  
DSG  
Change from Spec number: 38-M-00036 to 38-05269  
Document #: 38-05269 Rev. **  
Page 7 of 7  
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