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UZVP4424A

型号：

UZVP4424A

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

3 页

PDF大小：

108 K

下载PDF手册
P-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ISSUE 2 – SEPTEMBER 94  
ZVP4424A  
FEATURES  
*
*
*
240 Volt VDS  
RDS(on)=9Ω  
Low threshold  
APPLICATIONS  
Electronic Hook Switch  
*
D
G
S
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
UNIT  
V
Drain-Source Voltage  
-240  
-200  
Continuous Drain Current at Tamb=25°C  
Pulsed Drain Current  
ID  
mA  
A
IDM  
-1  
Gate Source Voltage  
VGS  
V
± 40  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
750  
mW  
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP  
MAX. UNIT CONDITIONS.  
Drain-Source Breakdown  
Voltage  
BVDSS  
-240  
V
ID=-1mA, VGS=0V  
ID=-1mA, VDS= VGS  
VGS=± 40V, VDS=0V  
Gate-Source Threshold  
Voltage  
VGS(th)  
-0.7  
-1.4  
-2.0  
100  
V
Gate-Body Leakage  
IGSS  
IDSS  
nA  
Zero Gate Voltage Drain  
Current  
-10  
-100  
VDS=-240 V, VGS=0  
VDS=-190V, VGS=0V, T=125°C  
µA  
µA  
On-State Drain Current  
ID(on)  
-0.75 -1.0  
A
VDS=-10 V, VGS=-10V  
Static Drain-Source  
On-State Resistance  
RDS(on)  
7.1  
8.8  
9
11  
VGS=-10V,ID=-200mA  
VGS=-3.5V,ID=-100mA  
Ω
Ω
Forward  
Transconductance (1) (2)  
gfs  
125  
mS  
VDS=-10V,ID=-0.2A  
Input Capacitance (2)  
Ciss  
100  
18  
200  
25  
pF  
pF  
Common Source Output  
Capacitance (2)  
Coss  
VDS=-25V, VGS=0V, f=1MHz  
Reverse Transfer  
Capacitance (2)  
Crss  
5
15  
pF  
Turn-On Delay Time (2)(3) td(on)  
Rise Time (2)(3) tr  
Turn-Off Delay Time (2)(3) td(off)  
Fall Time (2)(3) tf  
8
15  
15  
40  
30  
ns  
ns  
ns  
ns  
8
VDD ≈−50V, ID =-0.25A,  
VGEN=-10V  
26  
20  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.  
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator  
3-436  
ZVP4424A  
TYPICAL CHARACTERISTICS  
-1.2  
-1.2  
300µs Pulsed Test  
V
GS=-10V  
-1.0  
-0.8  
-1.0  
-0.8  
-0.6  
-5V  
-4V  
-0.6  
-0.4  
-0.2  
0
VDS=-10V  
300µs Pulsed Test  
-0.4  
-0.2  
0
-3V  
-2.5V  
-2V  
0
-2  
-4  
-6  
-8  
-10  
0
-2  
-4  
-6  
-8  
-10  
VGS - Gate Source Voltage (Volts)  
VDS - Drain Source Voltage (Volts)  
Transfer Characteristics  
Saturation Characteristics  
400  
400  
300  
200  
300  
200  
300µs Pulsed Test  
300µs Pulsed Test  
VDS=-10V  
VDS=-10V  
100  
0
100  
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
0
-2  
-4  
-6  
V
GS-Gate Source Voltage (Volts)  
ID- Drain Current (Amps)  
Transconductance v drain current  
Transconductance v gate-source voltage  
100  
2.4  
-2.5V  
VGS=-10V  
VGS=-2V  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
I
D=0.2A  
-3V  
-10V  
G
Vo  
ate  
10  
T
h
res  
V
h
o
l
d
l
tag  
e
0.6  
0.4  
0.2  
0.0  
V
GS=  
VDS  
300µs Pulsed Test  
ID=-1m A  
1
-50  
125  
-0.01  
-25  
0
25  
50  
75  
100  
150  
-0.1  
-1  
-10  
ID-Drain Current (Am ps)  
Junction Temperature (°C)  
Normalised RDS(on) and VGS(th) vs Temperature  
On-resistance vs Drain Current  
3-437  
ZVP4424A  
TYPICAL CHARACTERISTICS  
300  
250  
200  
150  
100  
50  
0
Note:VGS=0V  
-2  
-4  
-6  
Ciss  
-8  
VDS= -20V  
-10  
-50V  
-100V  
Coss  
Crss  
-12  
-14  
-16  
Note:ID=- 0.25A  
0
-0.01  
-1  
-10  
-100  
0
1
2
3
4
5
VDS-Drain Source Voltage (Volts)  
Q-Gate Charge (nC)  
Capacitance v drain-source voltage  
Gate charge v gate-source voltage  
0.8  
D=1 (D.C.)  
150  
0.6  
0.4  
0.2  
100  
D=0.5  
50  
D=0.2  
D=0.1  
D=0.05  
Single Pulse  
0
0
0
50  
100  
150  
0.0001 0.001  
0.01  
0.1  
1
10  
100  
Tamb - Ambient Temperature (°C)  
Pulse Width (seconds)  
Derating Curve  
Maximum transient thermal impedance  
3-438  
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