SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVP3310F
ISSUE 3 OCTOBER 1995
✪
FEATURES
*
*
100 Volt VDS
S
RDS(on)=20Ω
D
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVN3310F
MR
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
-100
UNIT
V
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
75
mA
A
IDM
-1.2
Gate Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
mW
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS
-100
V
ID=-1mA, VGS=0V
ID=-1mA, VDS= VGS
VGS=± 20V, VDS=0V
Gate-Source Threshold
Voltage
VGS(th)
-1.5
-3.5
-20
V
Gate-Body Leakage
IGSS
IDSS
nA
Zero Gate Voltage Drain
Current
-1
-50
VDS=-100V, VGS=0
µA
µA
VDS=-80V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
-300
50
mA
VDS=-25 V, VGS=-10V
VGS=-10V, ID=-150mA
Static Drain-Source On-State RDS(on)
Resistance (1)
20
Ω
Forward Transconductance
(1)(2)
gfs
mS
VDS=-25V, ID=-150mA
Input Capacitance (2)
Ciss
50
15
pF
pF
Common Source Output
Capacitance (2)
Coss
VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
5
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
8
8
8
8
ns
ns
ns
ns
VDD≈-25V, ID=-150mA
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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