SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN3320F
ISSUE 3 – DECEMBER 1995
✪
FEATURES
*
*
200 Volt VDS
RDS(on)= 25Ω
S
D
G
PARTMARKING DETAIL – MU
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
200
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
60
1
mA
A
IDM
Gate-Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
mW
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
200
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
1.0
3.0
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
IDSS
100
nA
V
GS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current
10
50
V
V
DS=200V, VGS=0V
DS=160V, VGS=0V,
µA
µA
T=125°C(2)
On-State Drain Current(1)
ID(on)
250
75
mA
VDS=25V, VGS=10V
VGS=10V,ID=100mA
Static Drain-Source On-State
Resistance (1)
RDS(on)
25
Ω
Forward Transconductance(1) gfs
(2)
mS
VDS=25V,ID=100mA
Input Capacitance (2)
Ciss
45
18
pF
pF
Common Source
Output Capacitance (2)
Coss
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss
(2)
5
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
5
7
6
6
ns
ns
ns
ns
V
DD ≈25V, ID=100mA
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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