N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN0124A
ISSUE 1 – MARCH 94
FEATURES
*
*
240 Volt VDS
RDS(on)=16Ω
APPLICATIONS
Telephone handsets
D
G
S
*
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo ltag e
240
160
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C
Pu ls e d Dra in Cu rre n t
ID
m A
A
IDM
2
Ga te S o u rce Vo lta g e
VGS
V
± 20
Po w e r Dis s ip a tio n a t Ta m b=25°C
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e
Pto t
700
m W
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN.
MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre akd o w n
Vo lta g e
BVDS S 240
V
ID=1m A, VGS=0V
Ga te-S o u rce Th res h o ld
Vo lta g e
VGS (th )
1
3
V
ID=1m A, VDS= VGS
Ga te-Bo d y Lea ka g e
IGS S
IDS S
20
n A
V
GS=± 20V, VDS=0V
Ze ro Ga te Vo lta g e Dra in
Cu rre n t
10
100
VDS=240 V, VGS=0
VDS=192 V, VGS=0V,
µA
µA
T=125°C(2)
On -S ta te Dra in Cu rre n t(1)
ID(o n )
500
100
m A
VDS=25 V, VGS=10V
VGS=10V,ID=250m A
S ta tic Drain -S o u rce On -S ta te RDS (o n )
Res is ta n ce (1)
16
Ω
Fo rw a rd Tra n s co n d u ctan ce
(1)(2)
g fs
m S
VDS=25V,ID=250m A
In p u t Ca p a citan ce (2)
Cis s
85
20
p F
p F
Co m m o n S o u rce Ou tp u t
Cap acita n ce (2)
Co s s
VDS=25 V, VGS=0V, f=1MHz
Reve rs e Tra n s fe r
Cap acita n ce (2)
Crs s
7
p F
Tu rn -On De lay Tim e (2)(3)
Ris e Tim e (2)(3)
td (o n )
tr
td (o ff)
tf
7
n s
n s
n s
n s
8
VDD ≈25V, ID=250m A
Tu rn -Off De la y Tim e (2)(3)
Fa ll Tim e (2)(3)
16
8
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sam ple test.
3-350
(
3
