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TYN20-800T,127

型号：

TYN20-800T,127

品牌：

NXP[ NXP ]

页数：

11 页

PDF大小：

157 K

下载PDF手册
TYN20-800T  
SCR  
23 July 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic  
package intended for use in applications requiring very high inrush current capability,  
high thermal cycling performance and high junction temperature capability (Tj(max) = 150  
°C).  
1.2 Features and benefits  
High bidirectional blocking voltage capability  
High junction operating temperature capability  
High thermal cycling performance  
Planar passivated for voltage ruggedness and reliability  
Very high current surge capability  
•
•
•
•
•
1.3 Applications  
Capacitive Discharge Ignition (CDI)  
•
•
•
•
•
Crowbar protection  
Inrush protection  
Motor control  
Voltage regulation  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
VRRM  
ITSM  
repetitive peak off-  
state voltage  
-
-
800  
V
repetitive peak reverse  
voltage  
-
-
-
-
800  
210  
V
A
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;  
state current  
tp = 10 ms; Fig. 4; Fig. 5  
half sine wave; Tj(init) = 25 °C;  
tp = 8.3 ms  
-
-
231  
A
Tj  
junction temperature  
RMS on-state current  
-
-
-
-
150  
20  
°C  
A
IT(RMS)  
half sine wave; Tmb ≤ 129 °C; Fig. 1;  
Fig. 2  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 
NXP Semiconductors  
TYN20-800T  
SCR  
Symbol  
Parameter  
Conditions  
Min  
-
Typ  
4.5  
-
Max  
32  
-
Unit  
mA  
Static characteristics  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7  
Dynamic charateristics  
dVD/dt  
rate of rise of off-state VDM = 536 V; Tj = 150 °C; (VDM = 67%  
300  
V/µs  
voltage  
of VDRM); exponential waveform; gate  
open circuit  
2. Pinning information  
Table 2.  
Pin  
Pinning information  
Symbol Description  
Simplified outline  
Graphic symbol  
mb  
A
K
1
K
A
G
A
cathode  
anode  
gate  
G
2
sym037  
3
mb  
mounting base; connected to  
anode  
1
2 3  
TO-220AB (SOT78)  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
TYN20-800T  
TO-220AB  
plastic single-ended package; heatsink mounted; 1 mounting  
hole; 3-lead TO-220AB  
SOT78  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDRM  
Parameter  
Conditions  
Min  
Max  
800  
800  
12.7  
20  
Unit  
V
repetitive peak off-state voltage  
repetitive peak reverse voltage  
average on-state current  
RMS on-state current  
-
-
-
-
VRRM  
V
IT(AV)  
half sine wave; Tmb ≤ 129 °C; Fig. 3  
A
IT(RMS)  
half sine wave; Tmb ≤ 129 °C; Fig. 1;  
Fig. 2  
A
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
2 / 11  
 
 
 
NXP Semiconductors  
TYN20-800T  
SCR  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
ITSM  
non-repetitive peak on-state  
current  
half sine wave; Tj(init) = 25 °C;  
tp = 10 ms; Fig. 4; Fig. 5  
-
210  
A
half sine wave; Tj(init) = 25 °C;  
tp = 8.3 ms  
-
231  
A
I2t  
I2t for fusing  
A2s  
tp = 10 ms; sine-wave pulse  
-
-
220.5  
50  
dIT/dt  
rate of rise of on-state current  
IT = 40 A; IG = 200 mA; dIG/  
dt = 200 mA/µs  
A/µs  
IGM  
peak gate current  
-
5
A
VRGM  
PGM  
PG(AV)  
Tstg  
peak reverse gate voltage  
peak gate power  
-
5
V
-
20  
1
W
W
°C  
°C  
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
-
-40  
-
150  
150  
Tj  
003aaj874  
003aaj872  
50  
25  
I
I
T(RMS)  
(A)  
T(RMS)  
(A)  
129 °C  
40  
30  
20  
10  
0
20  
15  
10  
5
0
-50  
-2  
10  
-1  
10  
1
10  
0
50  
100  
150  
surge duration (s)  
T
(°C)  
mb  
Fig. 2. RMS on-state current as a function of surge  
duration; maximum values  
Fig. 1. RMS on-state current as a function of mounting  
base temperature; maximum values  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
3 / 11  
 
 
NXP Semiconductors  
TYN20-800T  
SCR  
003aaj876  
25  
122.5  
T
mb(max)  
(°C)  
P
tot  
(W)  
20  
128  
a=1.57  
1.9  
2.2  
15  
10  
5
133.5  
139  
2.8  
conduction form  
4
angle  
(degrees)  
factor  
a
30  
60  
90  
120  
180  
4
2.8  
2.2  
1.9  
1.57  
144.5  
150  
α
0
0
2.5  
5
7.5  
10  
12.5  
15  
I
(A)  
T(AV)  
Fig. 3. Total power dissipation as a function of average on-state current; maximum values  
003aaj447  
240  
I
TSM  
(A)  
180  
120  
60  
0
I
I
T
TSM  
t
t
p
T
= 25 °C max  
j(init)  
2
3
1
10  
10  
10  
number of cycles (n)  
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
values  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
4 / 11  
 
 
NXP Semiconductors  
TYN20-800T  
SCR  
003aaj446  
4
10  
I
TSM  
(A)  
3
2
10  
(1)  
10  
I
I
T
TSM  
t
t
p
T
= 25 °C max  
j(init)  
10  
-5  
10  
-4  
-3  
10  
-2  
10  
10  
t (s)  
p
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values  
5. Thermal characteristics  
Table 5.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
Fig. 6  
-
-
1.1  
K/W  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
in free air  
-
60  
-
K/W  
003aaj448  
10  
Z
th(j-mb)  
(K/W)  
1
-1  
-2  
-3  
10  
10  
10  
t
p
P
d =  
T
t
t
p
T
-5  
-4  
-3  
-2  
10  
-1  
10  
10  
10  
10  
1
10  
t
p
(s)  
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
5 / 11  
 
 
 
NXP Semiconductors  
TYN20-800T  
SCR  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
IGT gate trigger current  
IL  
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7  
VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8  
VD = 12 V; Tj = 25 °C; Fig. 9  
-
-
-
-
-
4.5  
21  
32  
60  
40  
1.5  
1.3  
mA  
mA  
mA  
V
latching current  
holding current  
IH  
16  
VT  
VGT  
on-state voltage  
gate trigger voltage  
IT = 32 A; Tj = 25 °C; Fig. 10  
1.2  
0.7  
VD = 12 V; IT = 0.1 A; Tj = 25 °C;  
Fig. 11  
V
VD = 400 V; IT = 0.1 A; Tj = 150 °C;  
Fig. 11  
0.2  
0.4  
-
V
ID  
IR  
off-state current  
reverse current  
VD = 800 V; Tj = 150 °C  
Tj = 150 °C; VR = 800 V  
-
-
0.2  
0.2  
1
1
mA  
mA  
Dynamic charateristics  
dVD/dt  
rate of rise of off-state VDM = 536 V; Tj = 150 °C; (VDM = 67%  
300  
-
-
V/µs  
voltage  
of VDRM); exponential waveform; gate  
open circuit  
003aaj868  
003aaj867  
3
3
I
I
L
GT  
I
I
L(25°C)  
GT(25°C)  
2
2
1
0
1
0
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
Fig. 7. Normalized gate trigger current as a function of Fig. 8. Normalized latching current as a function of  
junction temperature  
junction temperature  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
6 / 11  
 
 
 
NXP Semiconductors  
TYN20-800T  
SCR  
003aaj878  
003aaj869  
3
40  
I
T
I
H
(A)  
I
H(25°C)  
30  
2
20  
10  
0
(1)  
(2)  
(3)  
1
0
-50  
0
50  
100  
150  
0
1
2
T (°C)  
j
V (V)  
T
Vo = 1.0485 V; Rs = 0.0133 Ω  
(1) Tj = 150 °C; typical values  
Fig. 9. Normalized holding current as a function of  
junction temperature  
(2) Tj = 150 °C; maximum values  
(3) Tj = 25 °C; maximum values  
Fig. 10. On-state current as a function of on-state  
voltage  
003aaj871  
1.6  
V
GT  
V
GT(25°C)  
1.2  
0.8  
0.4  
-50  
0
50  
100  
150  
T (°C)  
j
Fig. 11. Normalized gate trigger voltage as a function of junction temperature  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
7 / 11  
 
 
 
NXP Semiconductors  
TYN20-800T  
SCR  
7. Package outline  
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB  
SOT78  
E
p
A
A
1
q
mounting  
D
1
base  
D
(1)  
(1)  
L
L
1
2
Q
(2)  
b
1
L
(3×)  
(2)  
b
2
(2×)  
1
2
3
b(3×)  
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
2
(2)  
(2)  
(1)  
1
UNIT  
mm  
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.  
4.7  
4.1  
1.40  
1.25  
0.9  
0.6  
1.6  
1.0  
1.3  
1.0  
0.7  
0.4  
16.0  
15.2  
6.6  
5.9  
10.3  
9.7  
15.0 3.30  
12.8 2.79  
3.8  
3.5  
3.0  
2.7  
2.6  
2.2  
2.54  
3.0  
Notes  
1. Lead shoulder designs may vary.  
2. Dimension includes excess dambar.  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
08-04-23  
08-06-13  
SOT78  
SC-46  
3-lead TO-220AB  
Fig. 12. TO-220AB (SOT78)  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
8 / 11  
 
NXP Semiconductors  
TYN20-800T  
SCR  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
8. Legal information  
8.1 Data sheet status  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Document  
Product  
Definition  
status [1][2] status [3]  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Right to make changes — NXP Semiconductors reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.nxp.com.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
8.2 Definitions  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
NXP Semiconductors does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Customers are responsible for the design and operation of their  
applications and products using NXP Semiconductors products, and NXP  
Semiconductors accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole responsibility to determine  
whether the NXP Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as for the planned  
application and use of customer’s third party customer(s). Customers should  
provide appropriate design and operating safeguards to minimize the risks  
associated with their applications and products.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences  
of use of such information.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default  
in the customer’s applications or products, or the application or use by  
customer’s third party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications  
and the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local NXP  
Semiconductors sales office. In case of any inconsistency or conflict with the  
short data sheet, the full data sheet shall prevail.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product  
is deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
8.3 Disclaimers  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, NXP Semiconductors does not give  
any representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
9 / 11  
 
 
 
 
 
NXP Semiconductors  
TYN20-800T  
SCR  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor  
tested in accordance with automotive testing or application requirements.  
NXP Semiconductors accepts no liability for inclusion and/or use of non-  
automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without NXP Semiconductors’ warranty  
of the product for such automotive applications, use and specifications, and  
(b) whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
8.4 Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,  
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,  
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,  
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,  
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.  
HD Radio and HD Radio logo — are trademarks of iBiquity Digital  
Corporation.  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
10 / 11  
 
NXP Semiconductors  
TYN20-800T  
SCR  
9. Contents  
1
Product profile ....................................................... 1  
General description .............................................. 1  
Features and benefits ...........................................1  
Applications ..........................................................1  
Quick reference data ............................................ 1  
1.1  
1.2  
1.3  
1.4  
2
3
4
5
6
7
Pinning information ...............................................2  
Ordering information .............................................2  
Limiting values .......................................................2  
Thermal characteristics .........................................5  
Characteristics .......................................................6  
Package outline ..................................................... 8  
8
Legal information ...................................................9  
Data sheet status ................................................. 9  
Definitions .............................................................9  
Disclaimers ...........................................................9  
Trademarks ........................................................ 10  
8.1  
8.2  
8.3  
8.4  
© NXP B.V. 2012. All rights reserved  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 23 July 2012  
TYN20-800T  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved  
Product data sheet  
23 July 2012  
11 / 11  
厂商 型号 描述 页数 下载

STMICROELECTRONICS

 		TYN05 晶闸管[ THYRISTORS ] 4 页

STMICROELECTRONICS

 		TYN0510 SCR[ SCR ] 4 页

STMICROELECTRONICS

 		TYN0510/F2 [ 10A, 50V, SCR, TO-220, TO-220, 3 PIN ] 4 页

STMICROELECTRONICS

 		TYN0510/F3 [ 10A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

STMICROELECTRONICS

 		TYN0510/F5 [ 10A, 50V, SCR, TO-220, TO-220, 3 PIN ] 4 页

STMICROELECTRONICS

 		TYN0512 高浪涌能力高通态电流高稳定性和可靠性[ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ] 5 页

STMICROELECTRONICS

 		TYN0512/F3 [ 12A, 50V, SCR, TO-220, TO-220, 2 PIN ] 5 页

STMICROELECTRONICS

 		TYN0512/F5 [ 12A, 50V, SCR, TO-220, TO-220, 3 PIN ] 5 页

STMICROELECTRONICS

 		TYN0516 可控硅16A[ 16A SCRs ] 7 页

STMICROELECTRONICS

 		TYN0516/F3 [ 16A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

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