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TYN1012T

型号：

TYN1012T

描述：

中外合作办学12A\n[ 12A SCRS ]

品牌：

ETC[ ETC ]

页数：

10 页

PDF大小：

156 K

下载PDF手册
TN12, TS12 and TYNx12 Series  
®
SENSITIVE & STANDARD  
12A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
12  
Unit  
G
I
A
T(RMS)  
K
A
A
V
/V  
600 to 1000  
0.2 to 15  
V
DRM RRM  
I
mA  
K
GT  
K
A
A
G
G
DESCRIPTION  
DPAK  
2
D PAK  
(TS12-B)  
(TN12-B)  
Available either in sensitive (TS12) or standard  
(TYN, TN12...) gate triggering levels, the 12A SCR  
series is suitable to fit all modes of control found in  
applications such as overvoltage crowbar  
protection, motor control circuits in power tools  
and kitchen aids, in-rush current limiting circuits,  
capacitive discharge ignition, voltage regulation  
circuits...  
(TN12-G)  
A
A
K
A
K
G
A
Available in though-hole or surface-mount  
packages, they provide an optimized performance  
in a limited space area.  
G
IPAK  
(TS12-H)  
(TN12-H)  
TO-220AB  
(TYN)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
12  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 105°C  
Tc = 105°C  
A
A
IT  
Average on-state current (180° conduction angle)  
(AV)  
8
²
DPAK /  
IPAK  
D PAK /  
TO-220AB  
I
Non repetitive surge peak  
on-state current  
tp = 8.3 ms  
115  
110  
146  
TSM  
Tj = 25°C  
Tj = 25°C  
Tj = 125°C  
A
tp = 10 ms  
140  
²
²
²
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
60  
98  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state  
dI/dt  
50  
A/µs  
current I = 2 x I  
, tr ≤ 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage (for TN12 & TYN)  
5
RGM  
September 2000 - Ed: 3  
1/10  
TN12, TS12 and TYNx12 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
■ SENSITIVE  
Symbol  
Test Conditions  
TS1220  
Unit  
I
GT  
MAX.  
200  
µA  
V
V
= 12 V  
R = 140 Ω  
D
L
V
MAX.  
MIN.  
MIN.  
0.8  
0.1  
8
GT  
V
Tj = 125°C  
V
I
= V  
R = 3.3 kΩ  
R
= 1 kΩ  
GK  
V
GD  
D
DRM  
L
V
= 10 µA  
V
RG  
RG  
I
I = 50 mA  
R
GK  
= 1 kΩ  
= 1 kΩ  
MAX.  
MAX.  
MIN.  
5
mA  
mA  
V/µs  
V
H
T
I
I
= 1 mA  
R
GK  
6
L
G
V
I
= 67 % V  
R
= 220 Ω  
dV/dt  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
5
D
DRM  
GK  
V
= 24 A tp = 380 µs  
MAX.  
MAX.  
MAX.  
MAX.  
1.6  
0.85  
30  
5
TM  
TM  
V
Threshold voltage  
V
t0  
R
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
DRM  
RRM  
V
= V  
R
= 220 Ω  
GK  
DRM  
RRM  
2
■ STANDARD  
TN1215  
TYN  
Symbol  
Test Conditions  
Unit  
B/H  
G
x12T  
x12  
I
MIN.  
MAX.  
MAX.  
2
0.5  
5
2
mA  
GT  
15  
15  
V
V
= 12 V  
R = 33 Ω  
L
D
V
V
1.3  
0.2  
V
GT  
Tj = 125°C  
MIN.  
= V  
R = 3.3 kΩ  
L
V
GD  
D
DRM  
I
I = 500 mA Gate open  
MAX.  
MAX.  
40  
80  
30  
60  
15  
30  
40  
30  
60  
mA  
mA  
H
T
I
I = 1.2 I  
G GT  
L
dV/dt  
V
I
= 67 % V  
Gate open  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
MIN.  
200  
200  
V/µs  
V
D
DRM  
V
MAX.  
= 24 A tp = 380 µs  
1.6  
0.85  
30  
5
TM  
TM  
V
MAX.  
MAX.  
MAX.  
V
Threshold voltage  
t0  
R
mΩ  
Dynamic resistance  
d
I
µA  
DRM  
V
= V  
RRM  
DRM  
mA  
I
2
RRM  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
Junction to case (DC)  
Junction to ambient  
th(j-c)  
th(j-a)  
1.3  
°C/W  
°C/W  
R
TO-220AB  
IPAK  
60  
100  
45  
²
²
S = 1 cm  
D PAK  
²
DPAK  
70  
S = 0.5 cm  
S = Copper surface under tab  
2/10  
TN12, TS12 and TYNx12 Series  
PRODUCT SELECTOR  
Part Number  
Voltage (xxx)  
700 V 800 V  
Sensitivity  
Package  
600 V  
1000 V  
TN1215-xxxB  
TN1215-xxxG  
X
X
X
X
15 mA  
15 mA  
DPAK  
²
X
X
D PAK  
TN1215-xxxH  
TS1220-xxxB  
TS1220-xxxH  
TYNx12  
X
X
X
X
X
15 mA  
0.2 mA  
0.2 mA  
30 mA  
15 mA  
IPAK  
DPAK  
X
X
IPAK  
X
X
X
X
TO-220AB  
TO-220AB  
TYNx12T  
ORDERING INFORMATION  
TN 12 15 - 600 B (-TR)  
STANDARD  
SCR  
PACKING MODE:  
SERIES  
Blank:Tube  
-TR: D2PAK & DPAK  
Tape & Reel  
PACKAGE:  
B: DPAK  
H: IPAK  
CURRENT: 12A  
VOLTAGE:  
600: 600V  
800: 800V  
1000: 1000V  
SENSITIVITY:  
15: 15mA  
G: D2PAK  
TS 12 20 - 600 B (-TR)  
SENSITIVE  
SCR  
SERIES  
PACKING MODE:  
Blank:Tube  
-TR: DPAK Tape & Reel  
PACKAGE:  
B: DPAK  
H: IPAK  
CURRENT: 12A  
SENSITIVITY:  
20: 200µA  
VOLTAGE:  
600: 600V  
700: 700V  
TYN 6 12 T  
STANDARD  
SCR  
SERIES  
SENSITIVITY:  
Blank: 30mA  
T: 15mA  
VOLTAGE:  
600: 600V  
800: 800V  
CURRENT: 12A  
1000: 1000V  
3/10  
TN12, TS12 and TYNx12 Series  
OTHER INFORMATION  
Part Number  
TN1215-x00B  
Marking  
TS1215x00  
Weight  
Base Quantity  
Packing mode  
0.3 g  
0.3 g  
1.5 g  
1.5 g  
0.4 g  
0.3 g  
0.3 g  
0.4 g  
2.3 g  
2.3 g  
2.3 g  
2.3 g  
75  
2500  
50  
Tube  
Tape & reel  
Tube  
TN1215-x00B-TR  
TN1215-x00G  
TN1215-x00G-TR  
TN1215-x00H  
TS1220-x00B  
TS1220-x00B-TR  
TS1220-x00H  
TYNx12  
TS1215x00  
TS1215x00G  
TS1215x00G  
TN1215x00  
TS1220x00  
TS1220x00  
TS1220x00  
TYNx12  
1000  
75  
Tape & reel  
Tube  
75  
Tube  
2500  
75  
Tape & reel  
Tube  
250  
50  
Bulk  
TYNx12RG  
TYNx12  
Tube  
TYNx12T  
TYNx12T  
250  
50  
Bulk  
TYNx12TRG  
TYNx12T  
Tube  
Note: x = voltage  
Fig. 1: Maximum average power dissipation  
Fig. 2-1: Average and D.C. on-state current  
versus average on-state current.  
versus case temperature.  
P(W)  
IT(av)(A)  
12  
11  
14  
α = 180°  
DC  
10  
9
8
7
6
12  
10  
α = 180°  
8
5
4
3
6
4
360°  
2
1
0
2
α
IT(av)(A)  
Tcase(°C)  
0
0
1
2
3
4
5
6
7
8
9
0
25  
50  
75  
100  
125  
Fig. 2-2: Average and D.C. on-state current  
versus ambient temperature (device mounted on  
FR4 with recommended pad layout) (DPAK and  
Fig. 3-1: Relative variation of thermal impedance  
junction to case versus pulse duration.  
2
D PAK).  
IT(av)(A)  
K = [Zth(j-c)/Rth(j-c)]  
3.0  
1.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
DC  
2
D PAK  
0.5  
0.2  
α = 180°  
DPAK  
Tamb(°C)  
tp(s)  
0.1  
0
25  
50  
75  
100  
125  
1E-3  
1E-2  
1E-1  
1E+0  
4/10  
TN12, TS12 and TYNx12 Series  
Fig. 3-2:  
Relative variation of thermal  
Fig. 4-1: Relative variation of gate trigger  
current, holding current and latching versus  
junction temperature for TS12 series.  
impedance junction to ambient versus pulse  
duration (recommended pad layout, FR4 PC  
board).  
K = [Zth(j-a)/Rth(j-a)]  
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]  
1.00  
2.0  
1.8  
1.6  
1.4  
IGT  
DPAK  
D2PAK  
1.2  
IH & IL  
TO-220AB  
0.10  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Rgk = 1kΩ  
tp(s)  
Tj(°C)  
40 60  
0.01  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
-40 -20  
0
20  
80 100 120 140  
Fig. 4-2: Relative variation of gate trigger  
current, holding current and latching current  
versus junction temperature for TN12 & TYN  
series.  
Fig. 5: Relative variation of holding current  
versus gate-cathode resistance (typical values)  
for TS12 series.  
IH[Rgk] / IH[Rgk = 1k Ω]  
IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C]  
5.0  
2.4  
2.2  
Tj = 25°C  
4.5  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IGT  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
IH & IL  
Tj(°C)  
40 60  
0.5  
Rgk(kΩ)  
0.0  
-40 -20  
0
20  
80 100 120 140  
1E-2  
1E-1  
1E+0  
1E+1  
Fig. 6: Relative variation of dV/dt immunity  
versus gate-cathode resistance (typical values)  
for TS12 series.  
Fig. 7: Relative variation of dV/dt immunity  
versus gate-cathode capacitance (typical values)  
for TS12 series.  
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]  
dV/dt[Cgk] / dV/dt [Rgk = 220Ω]  
10.0  
4.0  
Tj = 125°C  
VD = 0.67 x VDRM  
VD = 0.67 x VDRM  
Tj = 125°C  
Rgk = 220Ω  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
1.0  
Rgk(kΩ)  
0.5  
Cgk(nF)  
0.1  
0.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
25  
50  
75  
100  
125  
150  
5/10  
TN12, TS12 and TYNx12 Series  
Fig. 8: Surge peak on-state current versus  
number of cycles (TS12/TN12/TYN).  
Fig. 9: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
tp < 10 ms, and corresponding values of I²t.  
a
2
2
dV/dt[Rgk] / dV/dt [Rgk = 220Ω]  
ITSM(A),I t(A s)  
10.0  
2000  
1000  
Tj = 125°C  
VD = 0.67 x VDRM  
Tjinitial=25°C  
ITSM  
TYN/TN12  
TS12  
dI/dt  
limitattion  
1.0  
TYN/TN12  
TS12  
100  
I2t  
Rgk(kΩ)  
tp(ms)  
10  
0.1  
0.0  
0.01  
0.10  
1.00  
10.00  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Fig. 10: On-state characteristics (maximum  
values).  
Fig. 11: Thermal resistance junction to ambient  
versus copper surface under tab (Epoxy printed  
circuit board FR4, copper thickness: 35 µm) .  
ITM(A)  
Rth(j-a)(°C/W)  
200  
100  
Tj max.:  
Vto = 0.85V  
Rd = 30mΩ  
100  
80  
60  
Tj = Tjmax.  
10  
DPAK  
40  
Tj = 25°C  
2
D PAK  
20  
2
S(cm )  
VTM(V)  
0
1
0
2
4
6
8
10 12 14 16 18 20  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
6/10  
TN12, TS12 and TYNx12 Series  
PACKAGE MECHANICAL DATA  
DPAK (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
Min.  
Max  
Min.  
Max.  
A
A1  
A2  
B
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.018  
0.236  
0.251  
0.173  
0.368  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.259  
0.181  
0.397  
B2  
C
R
C2  
D
R
E
G
H
L2  
L4  
R
0.80 typ.  
0.031 typ.  
0.60  
1.00  
0.023  
0.039  
0.2 typ.  
0.007 typ.  
0°  
V2  
0°  
8°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
DPAK (Plastic)  
6.7  
6.7  
3
3
1.6  
1.6  
2.3 2.3  
7/10  
TN12, TS12 and TYNx12 Series  
PACKAGE MECHANICAL DATA  
2
D PAK (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
A
E
C2  
L2  
A
A1  
A2  
B
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
D
L
B2  
C
1.40  
0.048 0.055  
L3  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
A1  
C2  
D
B2  
R
C
B
E
G
G
L
A2  
2.0 MIN.  
FLAT ZONE  
L2  
L3  
R
0.40  
0.016  
V2  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
2
D PAK (Plastic)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
8/10  
TN12, TS12 and TYNx12 Series  
PACKAGE MECHANICAL DATA  
IPAK (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
Min. Typ. Max. Min. Typ. Max.  
A
A1  
A3  
B
2.2  
0.9  
2.4  
1.1  
1.3  
0.9  
5.4  
0.85  
0.086  
0.035  
0.027  
0.025  
0.204  
0.094  
0.043  
0.051  
0.035  
0.212  
0.033  
A
E
C2  
0.7  
B2  
0.64  
5.2  
L2  
B2  
B3  
B5  
B6  
C
0.3  
0.035  
D
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
H
B3  
C2  
D
L1  
B6  
L
A1  
B
V1  
E
6.4  
4.4  
15.9  
9
G
H
16.3 0.626  
B5  
C
L
9.4  
1.2  
1
0.354  
0.031  
G
A3  
L1  
L2  
V1  
0.8  
0.8  
0.031 0.039  
10°  
10°  
9/10  
TN12, TS12 and TYNx12 Series  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
B
C
b2  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
L
3.75  
0.147  
F
I
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
A
b1  
b2  
C
l4  
c1  
c2  
e
c2  
a1  
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
b1  
M
c1  
l2  
l3  
M
e
2.60  
0.102  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
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厂商 型号 描述 页数 下载

STMICROELECTRONICS

 		TYN05 晶闸管[ THYRISTORS ] 4 页

STMICROELECTRONICS

 		TYN0510 SCR[ SCR ] 4 页

STMICROELECTRONICS

 		TYN0510/F2 [ 10A, 50V, SCR, TO-220, TO-220, 3 PIN ] 4 页

STMICROELECTRONICS

 		TYN0510/F3 [ 10A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

STMICROELECTRONICS

 		TYN0510/F5 [ 10A, 50V, SCR, TO-220, TO-220, 3 PIN ] 4 页

STMICROELECTRONICS

 		TYN0512 高浪涌能力高通态电流高稳定性和可靠性[ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ] 5 页

STMICROELECTRONICS

 		TYN0512/F3 [ 12A, 50V, SCR, TO-220, TO-220, 2 PIN ] 5 页

STMICROELECTRONICS

 		TYN0512/F5 [ 12A, 50V, SCR, TO-220, TO-220, 3 PIN ] 5 页

STMICROELECTRONICS

 		TYN0516 可控硅16A[ 16A SCRs ] 7 页

STMICROELECTRONICS

 		TYN0516/F3 [ 16A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

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