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IXXN110N65B4H1

型号：

IXXN110N65B4H1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

224 K

下载PDF手册
XPTTM 650V GenX4TM IXXN110N65B4H1  
w/ Sonic Diode  
VCES = 650V  
IC110 = 110A  
VCE(sat)  2.10V  
tfi(typ) = 43ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
E
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
E  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
G
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E   
IC25  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Chip Capability)  
Terminal Current Limit  
TC = 110°C  
230  
200  
110  
70  
A
A
A
A
C
G = Gate, C = Collector, E = Emitter  
TC = 110°C  
either emitter terminal can be used as  
Main or Kelvin Emitter  
TC = 25°C, 1ms  
650  
A
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2  
Clamped Inductive Load  
ICM = 220  
A
Features  
(RBSOA)  
@VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
International Standard Package  
miniBLOC, with Aluminium Nitride  
(SCSOA)  
RG = 82, Non Repetitive  
Isolation  
2500V~ Isolation Voltage  
Anti-Parallel Sonic Diode  
Optimized for 10-30kHz Switching  
Square RBSOA  
Short Circuit Capability  
High Current Handling Capability  
PC  
TC = 25°C  
750  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
High Power Density  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
4.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
50 A  
3 mA  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 110A, VGE = 15V, Note 1  
TJ = 150C  
1.72  
2.05  
2.10  
V
V
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100505C(8/16)  
IXXN110N65B4H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
SOT-227B miniBLOC (IXXN)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
52  
S
Cies  
Coes  
Cres  
3650  
470  
80  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
183  
32  
nC  
nC  
nC  
Qge  
Qgc  
IC = 110A, VGE = 15V, VCE = 0.5 • VCES  
83  
td(on)  
tri  
Eon  
td(off)  
tfi  
26  
40  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 55A, VGE = 15V  
2.20  
146  
43  
VCE = 400V, RG = 2  
Note 2  
Eof  
1.05  
1.70 mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
25  
40  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 55A, VGE = 15V  
3.00  
140  
110  
2.16  
mJ  
ns  
VCE = 400V, RG = 2  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
0.05  
Reverse Sonic Diode (FRD)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 100A, VGE = 0V, Note 1  
1.7  
1.8  
2.3  
V
V
TJ = 150C  
TJ = 150C  
IRM  
trr  
95  
A
IF = 100A, VGE = 0V,  
-diF/dt = 1500A/sVR = 300V  
100  
ns  
RthJC  
0.42 C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXN110N65B4H1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
V
= 15V  
GE  
GE  
200  
160  
120  
80  
13V  
12V  
11V  
14V  
13V  
12V  
10V  
9V  
11V  
10V  
9V  
8V  
7V  
40  
8V  
7V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
12V  
11V  
200  
160  
120  
80  
V
= 15V  
14V  
13V  
GE  
I
= 220A  
C
10V  
9V  
I
= 110A  
C
40  
8V  
7V  
I
= 55A  
75  
C
0
-50  
-25  
0
25  
50  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
350  
300  
250  
200  
150  
100  
50  
T
= 25ºC  
J
T
= - 40ºC  
25ºC  
J
T
J
= 150ºC  
I
= 220A  
C
110A  
55A  
0
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXXN110N65B4H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
IC = 110A  
I
G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
50  
100  
150  
200  
250  
300  
350  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
240  
200  
160  
120  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
C
T
J
= 150ºC  
res  
40  
R
G
= 2  
Ω
= 1 MHz  
5
f
dv / dt < 10V / ns  
10  
0
0
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
400  
500  
600  
700  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient thermal Impedance (IGBT)  
aaaa  
0.4  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXN110N65B4H1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
6
5
4
3
2
1
0
12  
10  
8
7
6
5
4
3
2
1
0
14  
12  
10  
8
E
R
E
E
E
off  
on  
off  
on  
= 2  
V
= 15V  
Ω ,  
G
GE  
T = 150ºC , V = 15V  
J
GE  
V
= 400V  
I = 110A  
C
CE  
V
= 400V  
CE  
T = 150ºC  
J
6
6
T = 25ºC  
J
4
4
I
= 55A  
12  
C
2
2
0
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100 105 110  
2
4
6
8
10  
14  
16  
IC - Amperes  
RG - Ohms  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
6
5
4
3
2
1
0
12  
10  
8
180  
160  
140  
120  
100  
80  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
E
R
E
t f i  
td(off)  
off  
on  
= 2  
VGE = 15V  
Ω ,  
G
T = 150ºC, V = 15V  
J GE  
VCE = 400V  
V
= 400V  
CE  
IC = 110A  
I
= 110A  
C
6
I
= 55A  
C
60  
4
40  
2
IC = 55A  
20  
0
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
160  
140  
120  
100  
80  
240  
220  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
220  
t f i  
td(off)  
t f i  
td(off)  
R
G
= 2 , V = 15V  
Ω
200  
180  
160  
140  
120  
100  
GE  
R
G
= 2 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T
= 150ºC  
= 25ºC  
J
I
= 55A, 110A  
C
60  
60  
40  
T
J
40  
20  
0
20  
25  
50  
75  
100  
125  
150  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100 105 110  
IC - Amperes  
TJ - Degrees Centigrade  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXXN110N65B4H1  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
200  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
180  
160  
140  
120  
100  
80  
42  
39  
36  
33  
30  
27  
24  
21  
18  
15  
t r i  
td(on)  
t r i  
td(on)  
R
G
= 2 , V = 15V  
Ω
T = 150ºC, V = 15V  
GE  
J
GE  
V
= 400V  
V
= 400V  
CE  
CE  
I
= 110A  
C
T = 25ºC  
J
T = 150ºC  
J
I
= 55A  
60  
C
60  
40  
40  
20  
20  
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100 105 110  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
200  
160  
120  
80  
60  
50  
40  
30  
20  
10  
t r i  
td(on)  
R
G
= 2 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 110A  
C
I
= 55A  
C
40  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXH_110N65B4(E8-RZ43) 8-24-16  
IXXN110N65B4H1  
Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt  
Fig. 21. Typ. Forward characteristics  
20  
16  
12  
8
200  
175  
150  
125  
100  
75  
T
= 150ºC  
= 300V  
VJ  
V
R
I
F
= 200A  
T
VJ  
= 25ºC  
T
VJ  
= 150ºC  
100A  
50A  
50  
4
25  
0
0
0
0.5  
1
1.5  
2
2.5  
3
1000  
1200  
1400  
1600  
1800  
2000  
VF - [V]  
-diF/ dt [A/µs]  
Fig. 24. Typ. Recovery Time trr vs. -diF/dt  
Fig. 23. Typ. Peak Reverse Current IRM vs. -diF/dt  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
I
F
= 200A  
TVJ = 150ºC  
R = 300V  
TVJ = 150ºC  
VR = 300V  
V
100A  
50A  
I
F
= 200A  
100A  
50A  
60  
40  
1000  
1200  
1400  
1600  
1800  
2000  
1000  
1200  
1400  
1600  
1800  
2000  
diF/dt [A/µs]  
-diF/dt [A/µs]  
Fig. 26. Maximum Transient Thermal Impedance ( Diode)  
Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt  
1
5
TVJ = 150ºC  
R = 300V  
I
F
= 200A  
V
4
3
2
1
0
0.1  
100A  
0.01  
50A  
0.001  
1000  
1200  
1400  
1600  
1800  
2000  
0.0001  
0.001  
0.01  
0.1  
1
10  
-diF/dt [A/µs]  
Pulse Width [s]  
© 2016 IXYS CORPORATION, All Rights Reserved  
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