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IXXK200N65B4

型号：

IXXK200N65B4

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

241 K

下载PDF手册
Preliminary Technical Information  
XPTTM 650V IGBT  
GenX4TM  
IXXK200N65B4  
IXXX200N65B4  
VCES = 650V  
IC110 = 200A  
VCE(sat)  1.7V  
tfi(typ) = 80ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
TO-264 (IXXK)  
G
C
E
Symbol  
Test Conditions  
Maximum Ratings  
Tab  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
PLUS247 (IXXX)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
ILRMS  
IC110  
TC = 25°C (Chip Capability)  
Lead Current Limit  
TC = 110°C  
480  
160  
200  
A
A
A
G
C
Tab  
ICM  
TC = 25°C, 1ms  
1100  
A
E
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1  
ICM = 400  
A
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
(SCSOA)  
RG = 10, Non Repetitive  
PC  
TC = 25°C  
1630  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for 10-30kHz Switching  
Square RBSOA  
-55 ... +175  
Short Circuit Capability  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
High Current Handling Capability  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
High Power Density  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
4.0  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
25 μA  
mA  
±200 nA  
TJ = 150°C  
2
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 160A, VGE = 15V, Note 1  
TJ = 150°C  
1.4  
1.6  
1.7  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100518C(6/14)  
IXXK200N65B4  
IXXX200N65B4  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
54  
90  
S
Cies  
Coes  
Cres  
11.25  
670  
nF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
390  
Qg(on)  
Qge  
Qgc  
553  
110  
253  
nC  
nC  
nC  
IC = 200A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
62  
76  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
VCE = 400V, RG = 1  
4.40  
245  
80  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
3
=
Note 2  
Eoff  
2.20  
3.50 mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
54  
65  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 100A, VGE = 15V  
5.55  
236  
110  
2.54  
mJ  
ns  
VCE = 400V, RG = 1  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.092 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Terminals: 1 - Gate  
2,4 - Collector  
3 - Emitter  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXK200N65B4  
IXXX200N65B4  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
V
= 15V  
GE  
GE  
10V  
9V  
13V  
12V  
11V  
11V  
10V  
9V  
8V  
8V  
7V  
7V  
3
0
0
0
0.5  
1
1.5  
2
2.5  
0
1
2
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
300  
250  
200  
150  
100  
50  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
I
= 300A  
C
10V  
9V  
I
= 200A  
C
I
8V  
7V  
= 100A  
75  
C
0
-50  
-25  
0
25  
50  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
200  
180  
160  
140  
120  
100  
80  
T
J
= 25ºC  
T
J
= - 40ºC  
25ºC  
T
J
= 150ºC  
I
= 300A  
C
60  
200A  
40  
20  
100A  
10  
0
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
7
8
9
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXXK200N65B4  
IXXX200N65B4  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
T
= - 40ºC  
J
VCE = 325V  
IC = 200A  
IG = 10mA  
25ºC  
150ºC  
60  
6
4
40  
20  
2
0
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
450  
400  
350  
300  
250  
200  
150  
100  
50  
100,000  
10,000  
1,000  
= 1 MHz  
f
C
ies  
C
oes  
res  
T
= 150ºC  
J
R
= 1  
Ω
dv / dt < 10V / ns  
G
C
100  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
400  
500  
600  
700  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXK200N65B4  
IXXX200N65B4  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
6
5
4
3
2
1
7
6
5
4
3
2
1
13  
11  
9
E
R
E
on - - - -  
E
E
on - - - -  
off  
off  
= 1  
V
= 15V  
GE  
Ω ,  
G
T = 150ºC , V = 15V  
J
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T = 150ºC  
J
7
I
= 100A  
C
T = 25ºC  
J
5
I
= 50A  
C
3
1
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
240  
220  
200  
180  
160  
140  
120  
100  
80  
900  
800  
700  
600  
500  
400  
300  
200  
100  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
7
6
5
4
3
2
1
0
E
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
= 1  
R
VGE = 15V  
Ω ,  
G
T = 150ºC, V = 15V  
J
GE  
VCE = 400V  
V
= 400V  
CE  
IC = 100A  
I
= 50A  
C
I
= 100A  
C
IC = 50A  
1
2
3
4
5
6
7
8
9
10  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
220  
200  
180  
160  
140  
120  
100  
80  
280  
275  
270  
265  
260  
255  
250  
245  
240  
235  
230  
180  
160  
140  
120  
100  
80  
320  
300  
280  
260  
240  
220  
200  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
R
G
= 1 , V = 15V  
R
G
= 1 , V = 15V  
Ω
Ω
GE  
GE  
T
J
= 150ºC  
V
= 400V  
V
= 400V  
CE  
CE  
I
= 50A  
C
T
J
= 25ºC  
I
= 100A  
C
60  
40  
20  
60  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXXK200N65B4  
IXXX200N65B4  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
64  
62  
60  
58  
56  
54  
52  
50  
48  
46  
44  
200  
180  
160  
140  
120  
100  
80  
130  
120  
110  
100  
90  
t r i  
t r i  
t
d(on) - - - -  
R
G
= 1 , V = 15V  
Ω
GE  
T = 150ºC, V = 15V  
J
GE  
V
= 400V  
T = 25ºC  
J
CE  
V
= 400V  
CE  
I
= 100A  
C
T = 150ºC  
J
80  
70  
I
= 50A  
C
60  
60  
40  
50  
20  
40  
0
30  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
130  
110  
90  
70  
65  
60  
55  
50  
45  
40  
t r i  
t
d(on) - - - -  
R
G
= 1 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 100A  
C
70  
50  
I
= 50A  
C
30  
10  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXX_200N65B4(F9)3-04-14-A  
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