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HZ6HB2

型号：

HZ6HB2

品牌：

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数：

10 页

PDF大小：

89 K

下载PDF手册
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
Cautions  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better  
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with  
semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate  
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or  
(iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas  
Technology Corporation product best suited to the customer's application; they do not convey any  
license under any intellectual property rights, or any other rights, belonging to Renesas Technology  
Corporation or a third party.  
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any  
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or  
circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and  
algorithms represents information on products at the time of publication of these materials, and are  
subject to change by Renesas Technology Corporation without notice due to product improvements or  
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation  
or an authorized Renesas Technology Corporation product distributor for the latest product information  
before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss  
rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corporation by various  
means, including the Renesas Technology Corporation Semiconductor home page  
(http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams,  
charts, programs, and algorithms, please be sure to evaluate all information as a total system before  
making a final decision on the applicability of the information and products. Renesas Technology  
Corporation assumes no responsibility for any damage, liability or other loss resulting from the  
information contained herein.  
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device  
or system that is used under circumstances in which human life is potentially at stake. Please contact  
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor  
when considering the use of a product contained herein for any specific purposes, such as apparatus or  
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.  
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in  
whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be  
exported under a license from the Japanese government and cannot be imported into a country other  
than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the  
country of destination is prohibited.  
8. Please contact Renesas Technology Corporation for further details on these materials or the products  
contained therein.  
HZ H Series  
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply  
ADE-208-794 (Z)  
Rev. 0  
May 1999  
Features  
•
•
Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for  
stabilized power supply, etc.  
Wide spectrum from 1.9V through 38V of zener voltage provide flexible application.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZ H Series  
Type No.  
DO-35  
Pin Arrangement  
7
B 2  
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
HZ H Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd  
Value  
500  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
175  
Tstg  
-55 to +175  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
Condition  
VZ (V)*1  
Condition IR (µA)  
Condition rd (Ω)  
Type  
Grade  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
Min  
1.9  
2.0  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
3.6  
3.7  
3.8  
3.9  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
IZ (mA)  
HZ2 H  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
2.7  
2.8  
2.9  
3.0  
3.1  
3.2  
3.3  
3.4  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
4.1  
5
5
0.5  
100  
5
HZ3 H  
5
5
0.5  
100  
5
HZ4 H  
5
5
1.0  
100  
5
Note: 1. Tested with DC.  
Rev.0, May. 1999, page 2 of 8  
HZ H Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition IR (µA)  
Condition rd (Ω)  
Condition  
IZ (mA)  
5
Type  
Grade  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
Min  
4.0  
4.1  
4.2  
4.3  
4.4  
4.5  
4.6  
4.7  
4.8  
4.9  
5.0  
5.1  
5.2  
5.3  
5.4  
5.5  
5.6  
5.7  
5.8  
6.0  
6.1  
6.3  
6.4  
6.6  
6.7  
6.9  
7.0  
7.2  
7.3  
7.5  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
HZ4 H  
4.2  
4.3  
4.4  
4.5  
4.6  
4.7  
4.8  
4.9  
5.0  
5.1  
5.2  
5.3  
5.5  
5.6  
5.7  
5.8  
5.9  
6.0  
6.1  
6.3  
6.4  
6.6  
6.7  
6.9  
7.0  
7.2  
7.3  
7.6  
7.7  
7.9  
5
5
1.0  
100  
HZ5 H  
HZ6 H  
HZ7 H  
5
5
5
5
5
1
1.5  
2.0  
3.5  
100  
5
5
5
40  
15  
Note: 1. Tested with DC.  
Rev.0, May. 1999, page 3 of 8  
HZ H Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition IR (µA)  
Condition rd (Ω)  
Condition  
IZ (mA)  
5
Type  
Grade  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
A1  
A2  
A3  
B1  
B2  
B3  
C1  
C2  
C3  
1
Min  
7.7  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
HZ9 H  
8.1  
5
1
5.0  
20  
7.9  
8.3  
8.1  
8.5  
8.3  
8.7  
8.5  
8.9  
8.7  
9.1  
8.9  
9.3  
9.1  
9.5  
9.3  
9.7  
HZ11 H  
HZ12 H  
HZ15 H  
9.5  
9.9  
5
5
5
1
1
1
7.5  
25  
35  
40  
5
5
5
9.7  
10.1  
10.3  
10.6  
10.8  
11.1  
11.3  
11.6  
11.9  
12.1  
12.4  
12.7  
12.9  
13.1  
13.4  
13.7  
14.0  
14.3  
14.7  
15.1  
15.5  
9.9  
10.2  
10.4  
10.7  
10.9  
11.1  
11.4  
11.6  
11.9  
12.2  
12.4  
12.6  
12.9  
13.2  
13.5  
13.8  
14.1  
14.5  
14.9  
9.5  
11.0  
2
3
Note: 1. Tested with DC.  
Rev.0, May. 1999, page 4 of 8  
HZ H Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition IR (µA)  
Condition rd (Ω)  
Condition  
IZ (mA)  
5
Type  
Grade  
Min  
Max  
IZ (mA)  
Max  
VR (V)  
Max  
HZ16 H  
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
15.3  
15.7  
16.3  
16.9  
17.5  
18.1  
18.8  
19.5  
20.2  
20.9  
21.6  
22.3  
22.9  
23.6  
24.3  
25.2  
26.2  
27.2  
28.2  
29.2  
30.2  
31.2  
32.2  
33.2  
34.2  
35.3  
36.4  
15.9  
16.5  
17.1  
17.7  
18.3  
19.0  
19.7  
20.4  
21.1  
21.9  
22.6  
23.3  
24.0  
24.7  
25.5  
26.6  
27.6  
28.6  
29.6  
30.6  
31.6  
32.6  
33.6  
34.6  
35.7  
36.8  
38.0  
5
1
12.0  
45  
HZ18 H  
HZ20 H  
HZ22 H  
HZ24 H  
HZ27 H  
HZ30 H  
HZ33 H  
HZ36 H  
5
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
13.0  
15.0  
17.0  
19.0  
21.0  
23.0  
25.0  
27.0  
55  
5
2
2
2
2
2
2
2
60  
65  
70  
80  
100  
120  
140  
Note: 1. Tested with DC.  
Note: 2. Type No. is as follows; HZ2 H B1, HZ 2 H B2, HZ36 H 3.  
Rev.0, May. 1999, page 5 of 8  
HZ H Series  
Main Characteristic  
10-2  
10-3  
10-4  
10-5  
10-6  
10-7  
10-8  
0
5
15  
Zener Voltage V Z (V)  
Fig.1 Zener current Vs. Zener voltage  
25  
30  
35  
40  
10  
20  
500  
400  
0.10  
50  
40  
5mm  
%/ C  
0.08  
2.5 mm  
3 mm  
0.06  
0.04  
0.02  
0
30  
Printed circuit board  
×
×
100 180 1.6t mm  
20  
Quality: paper phenol  
mV/ C  
10  
300  
200  
0
–10  
–20  
–30  
–0.02  
–0.04  
–0.06  
100  
0
–40  
–50  
–0.08  
–0.10  
15 20 25 30  
35 40  
0
5
10  
0
50  
Ambient Temperature Ta ( C)  
200  
100  
150  
Zener Voltage V (V)  
Z
Fig.2 Temperature Coefficient Vs. Zener voltage  
Fig.3 Power Dissipation Vs. Ambient Temperature  
Rev.0, May. 1999, page 6 of 8  
HZ H Series  
Package Dimensions  
Unit: mm  
26.0 Min  
26.0 Min  
4.2 Max  
7
B 2  
1
2
Type No. (Yellow)  
Cathode band (Navy blue)  
1. Cathode  
2. Anode  
Hitachi Code  
JEDECCode  
EIAJCode  
DO-35  
Abbreviation of type name  
DO-35  
SC-48  
0.13  
Type name  
without HZ.  
7
Weight(g)  
Zener voltage  
classification  
symbol equal  
to B1 or B3.  
B2  
Expanded drawing of marking  
Rev.0, May. 1999, page 7 of 8  
HZ H Series  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
(America) Inc.  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
San Jose,CA 95134  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Lower Cookham Road  
World Finance Centre,  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 4.0  
Rev.0, May. 1999, page 8 of 8  
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